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    TRANSISTOR BO 345 Search Results

    TRANSISTOR BO 345 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BO 345 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Small Signal Transistor Arrays UNA0225 (UN225) Silicon PNP epitaxial planar type (4 elements) Silicon NPN epitaxial planar type (4 elements) Unit: mm For motor drives 0.2+0.1 –0.0 0.3±0.1 16 151413121110 9


    Original     		PDF 2002/95/EC) UNA0225 UN225)

    UN234

    Abstract: No abstract text available
    Text: Small Signal Transistor Arrays UNA0234 Silicon PNP epitaxial planar type 4 elements Silicon NPN epitaxial planar type (4 elements) Unit: mm For motor drives For Small motor drive circuits in general 0.2+0.1 –0.0 M Di ain sc te on na tin nc ue e/ d 12°


    Original     		PDF UNA0234 UN234

    61089b

    Abstract: TH3 thermistor TH5 thermistor TRANSISTOR BO 344 OverCurrent Protector TRANSISTOR BO 346 79R241 GR-1089-CORE JESD51-2 TISP61089B
    Text: TISP61089B DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS TISP61089B High Voltage Ringing SLIC Protector Dual Voltage-Programmable Protectors - Supports Battery Voltages Down to -155 V - Low 5 mA max. Gate Triggering Current


    Original     		PDF TISP61089B TISP61089B 61089b TH3 thermistor TH5 thermistor TRANSISTOR BO 344 OverCurrent Protector TRANSISTOR BO 346 79R241 GR-1089-CORE JESD51-2

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM200HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE QM200HC-M APPLICATION Robotics, W elders, Forklifts, Golf cart OUTLINE DRAWING & CIRCUIT DIAGRAM Dim ensions in mm BO — f - t j - - W V -4 — •f-AAA'-t- EO —-'j' ex ó


    OCR Scan     		PDF QM200HC-M VCO200V

    Untitled

    Abstract: No abstract text available
    Text: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IS S U E 3 - J A N U A R Y 1996 BFN19 O C O M P L E M E N T A R Y TY PE - BFN18 P A R T M A R K IN G D ET A IL - DH ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L Collector-Base Voltage V cBO VALUE UNIT


    OCR Scan     		PDF BFN19 BFN18 -250V -250V, 300ns. FMMTA92

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview M TD15N06VL TMOS V Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET 15 AMPERES 60 VOLTS RDS on = 0-085 OHM N-Channel Enhancement-Mode Silicon Gate TM O S V i s a new te ch n o lo g y d esig n ed to a ch ie ve an o n -re s is ta n ce a rea p ro d u ct a bo u t o n e -h a lf th a t of sta n d a rd M O SFETs. T h is


    OCR Scan     		PDF

    ZTX752 equivalent

    Abstract: transistor 42-10a data BC369 FXTA92 BSS98
    Text: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request


    OCR Scan     		PDF ZVP2106C ZVP2110A ZVP2110C ZVP2120A ZTX788B ZVP2120C ZVP3306A ZVP3310A ZVP4105A 2110C ZTX752 equivalent transistor 42-10a data BC369 FXTA92 BSS98

    TRANSISTOR BO 345

    Abstract: No abstract text available
    Text: DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUITS UPC2776TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER D E S C R IP T IO N The ^¡PC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier.


    OCR Scan     		PDF UPC2776TB PC2776TB uPC2776TB uPC2776T PC2776T. WS60-00-1 C10535E) TRANSISTOR BO 345

    SD1496-3

    Abstract: Transistor D 798 M142 SD1496 transistor 623 A 798 transistor
    Text: Microsemi m m m RF P ro du cts m P ro g re s s P o w e re d b y T ec h no log y 140 C o m m e rce D rive M o n tg o m e ry v ille , PA 18936-1013 Tel: 215 631-9840 S D 1 4 9 6 -3 RF & MICROWAVE TRANSISTORS 900-960MHz GLASS C, BASE STATIONS CLASS C TRANSISTOR


    OCR Scan     		PDF SD1496 900-960MHz 960MHz SD1496-3 960MHz SD1496-3 Transistor D 798 M142 transistor 623 A 798 transistor

    Untitled

    Abstract: No abstract text available
    Text: Micmsemi • m vvaienown, mm 580 Pleasant St. W atertown, MA 02172 PH: 617 926-0404 FAX: (617) 924-1235 2N2907A Features • • • • 60 Volts 0.6 Am ps Meets MIL-S-19500/291 Collector-Base Voltage 60V Collector Current: 600 mAdc Fast Switching 345 nS


    OCR Scan     		PDF 2N2907A MIL-S-19500/291 SYMBO00kH MSC0276A

    Transistor BFR 181w

    Abstract: GMA13 MARKING CODE 21E SOT323 TRANSISTOR BO 345
    Text: SIEMENS BFR 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fr = 8GHz F=1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    OCR Scan     		PDF 900MHz Q62702-F1491 OT-323 Transistor BFR 181w GMA13 MARKING CODE 21E SOT323 TRANSISTOR BO 345

    transistor vergleichsliste

    Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
    Text: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G


    OCR Scan     		PDF

    TRANSISTOR BO 345

    Abstract: TD62554S TRANSISTOR BO 346 TRANSISTOR BO 344 62554S
    Text: SILICON MONOLITHIC BIPO LAR DIGITAL INTEGRATED CIRCUIT TD62551SJD62553S TD62554SJD62555S 4CH SINGLE DRIVER : C O M M O N EMITTER The TD62551S are comprised of four NPN transistor arrays. Applications include relay, hammer, lamp and display LED drivers. FEATURES


    OCR Scan     		PDF TD62551SJD62553S TD62554SJD62555S TD62551S 150mA TD62553S TD62554S TD62555S 2-24V TD62551 TRANSISTOR BO 345 TRANSISTOR BO 346 TRANSISTOR BO 344 62554S

    C751 TRANSISTOR

    Abstract: marking code p714 transistor p714 p714 lq 345
    Text: Central" CMPT751 Semiconductor Corp. SURFACE MOUNT PNP HIGH CURRENT SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT751 type is a high current PNP Silicon Transistor, epoxy molded in a space saving Power SOT-23 surface mount package, designed for high current


    OCR Scan     		PDF CMPT751 CMPT751 OT-23 13-November C751 TRANSISTOR marking code p714 transistor p714 p714 lq 345

    TRANSISTOR BO 345

    Abstract: QM15TD-9 mitsubishi air conditioner
    Text: MITSUBISHI TRANSISTOR MODULES QM15TD-9 MEDIUM POWER SWITCHING USE INSULATED TYPE QM15TD-9 • Ic • VCEX • hFE Collector current.15A Collector-emitter voltage. 500V DC current gain.75 • Insulated Type


    OCR Scan     		PDF QM15TD-9 E80276 E80271 TRANSISTOR BO 345 QM15TD-9 mitsubishi air conditioner

    MXR3866

    Abstract: No abstract text available
    Text: M O T O R O L A SC Í X S T R S / R F> ÖT ÖTJb3b7SS4 63 6 7 2 5 4 M O T O R O L A SC XSTRS/R F 89D 79458 D D ? C14SÖ 1 D MOTOROLA TECHNICAL DATA MXR3866 Die Source Sa m e a s 2N3866 RF TRANSISTOR N P N S IL IC O N M A X I M U M R A T IN G S Sym bol V alue


    OCR Scan     		PDF MXR3866 2N3866 MXR3866

    TRANSISTOR BO 345

    Abstract: TRANSISTOR BO 344
    Text: BU407 NPN PLASTIC POWER TRANSISTOR High Voltage, High Speed Transistors for Horizontal Deflection Output Stages of TVs and CRTs CD E 01M A e 1 c 1 ^ 1 6 o jr ~ t * ' 3 t j f t ' I I |J 1 3- D E r C H J K L M N MIN MAX 16.51 10.67 4.83 0.90 1,15 1,40 3,88 3,75


    OCR Scan     		PDF BU407 TRANSISTOR BO 345 TRANSISTOR BO 344

    Untitled

    Abstract: No abstract text available
    Text: O K I electronic components QCS30 Optical PNPN Sw itches GENERAL DESCRIPTION The OCS3 3 is an optical switch form ed by com bining a G aA s infrared light em itting diode and a silicon P N PN element that can w ithstand high voltages. The device is encased in an 8-pin plastic


    OCR Scan     		PDF QCS30 2424D OCS30 2424Q b724240

    TRANSISTOR BO 345

    Abstract: No abstract text available
    Text: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR FZT857 ISSU E 3 -FEBRUARY 1996 O -FEATURES * Up to 3.5 Amps continuous collector current, up to 5 Amp peak * V c e o -300V * Very low saturation voltage * Excellent hFE specified up to 3 Amps


    OCR Scan     		PDF OT223 FZT857 -300V FZT957 TRANSISTOR BO 345

    QM300HA-2H

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM300HA-2H HIGH POWER SWITCHING USE INSULATED TYPE QM300HA-2H lc V cex Collector current. Collector-emitter voltage. DC current gain . hre Insulated Type UL Recognized 30QA j 1000V 75 Yellow Card No. E80276 <N


    OCR Scan     		PDF QM300HA-2H E80276 E80271 rQrr10' QM300HA-2H

    2SK1792

    Abstract: irig b converter
    Text: TO SHIBA 2SK1792 Industrial Applications TQ-220FL Field Effect Transistor Unit in mm Silicon N Channel MOS Type L2-7t-MOS IV High Speed Switching, DC-DC Converter, Relay Drive, Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK1792 TQ-220FL 2SK1792 irig b converter

    QM100DY-HBK

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM100DY-HBK HIGH POWER SWITCHING USE INSULATED TYPE QM100DY-HBK • Ic Collector cu rre n t. • V cex • hFE Collector-em itter v o lta g e . DC current g a in . 100A i 600V ! .750 j


    OCR Scan     		PDF QM100DY-HBK E80276 E80271 QM100DY-HBK

    d1694

    Abstract: transistor D132 d-1694 BD131 D131 transistor d1687 TRANSISTOR D131 BD132 T4060 bm cb hen iv
    Text: BD131 JV _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic envelope fo r general purpose, medium power applications. P-N-P complement is BD132. Q U IC K R E F E R E N C E D A T A VCBO max. 70 V Collector-emitter voltage open base


    OCR Scan     		PDF BD131 OT-32 BD132. O-126 OT-32) 345l4b d1694 transistor D132 d-1694 BD131 D131 transistor d1687 TRANSISTOR D131 BD132 T4060 bm cb hen iv

    Untitled

    Abstract: No abstract text available
    Text: a'JE D P O W E R E X INC • TBTMbEl ODGMBTO 3 » P R X Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G, Durand, BP107, 72003 Le Mans, France (43) 41.14.14 KE721KA1HB High-Beta Six-Darlington Transistor Module


    OCR Scan     		PDF BP107, KE721KA1HB Amperes/1000