T0340VB
Abstract: T0340VB45G westcode igbt
Text: Date:- 6 August, 2012 Data Sheet Issue:- 2 Insulated Gate Bi-Polar Transistor Type T0340VB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800
|
Original
|
T0340VB45G
VRM10V,
T0340VB45G
T0340VB
westcode igbt
|
PDF
|
T0258HF65G
Abstract: No abstract text available
Text: Date:- 27 Jan, 2014 Data Sheet Issue:- A1 Advance Data Insulated Gate Bi-Polar Transistor Type T0258HF65G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 6500 V VCES Collector – emitter voltage Tj 25°C
|
Original
|
T0258HF65G
T0258HF65G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Date:- 6 August, 2012 Data Sheet Issue:- 2 Insulated Gate Bi-Polar Transistor Type T0340VB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800
|
Original
|
T0340VB45G
T0340VB45G
|
PDF
|
100A243
Abstract: 106 transistor 692.2 transistor 388 westcode diodes 103-150 TRANSISTOR 618 F0040BC18 F0140NC18 F0400LC180
Text: Old Part Number PDF Data Sheet Available GATE CONTROLLED DEVICE - Insulated Gate Bi-polar Transistor Diodes - Capsule Type New Part Number VRRM VRSM Range IF AV Tsink IF(d.c.) at IF(RSM) Tsink = 55oC Tsink = 25oC = 25oC (Note 1) (Note 2) (Note 4) (Note 2)
|
Original
|
F0040BC18
F0400LC180
F0140NC18
F1400NC180
125oC
100A243
100A249
100A243
106 transistor
692.2
transistor 388
westcode diodes
103-150
TRANSISTOR 618
F0040BC18
F0140NC18
F0400LC180
|
PDF
|
IGBT 2000V .50A
Abstract: t0160na
Text: Date:- 5 Nov, 2003 Provisional Data Data Sheet Issue:- 4 Absolute Maximum Ratings VOLTAGE RATINGS Insulated Gate Bi-Polar Transistor Type T0160NA52A MAXIMUM LIMITS UNITS Collector – emitter voltage 5200 V VDC link Permanent DC voltage for 100 FIT failure rate.
|
Original
|
T0160NA52A
IGBT 2000V .50A
t0160na
|
PDF
|
T0160NA45A
Abstract: T016 D-68623 IGBT 2000V .50A
Text: Date:- 24 Aug, 2004 Provisional Data Data Sheet Issue:- 1 Absolute Maximum Ratings VOLTAGE RATINGS Insulated Gate Bi-Polar Transistor Type T0160NA45A MAXIMUM LIMITS UNITS Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.
|
Original
|
T0160NA45A
T0160NA45A
T016
D-68623
IGBT 2000V .50A
|
PDF
|
T0900EB
Abstract: ad 156 transistor D-68623 OF IGBT 2000A 2000V Westcode Semiconductors transistor T0900EB45A
Text: WESTCODE An Date:- 30 Oct, 2008 Data Sheet Issue:- 1 IXYS Company Provisional Data Insulated Gate Bi-Polar Transistor Type T0900EB45A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS V VCES Collector – emitter voltage 4500 VDC link Permanent DC voltage for 100 FIT failure rate.
|
Original
|
T0900EB45A
T0900EB45A
T0900EB
ad 156 transistor
D-68623
OF IGBT 2000A 2000V
Westcode Semiconductors transistor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: WESTCODE An Date:- 30 Oct, 2008 Data Sheet Issue:- 1 IXYS Company Provisional Data Insulated Gate Bi-Polar Transistor Type T0900EB45A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.
|
Original
|
T0900EB45A
10ms1
T0900EB45A
|
PDF
|
T0340VB
Abstract: d686* transistor transistor c 2060 T0340VB45G 2008AN01 Westcode Semiconductors transistor 2060A D-68623 westcode igbt
Text: WESTCODE An Date:- 2 Dec, 2010 Data Sheet Issue:- 1 IXYS Company Provisional Data Insulated Gate Bi-Polar Transistor Type T0340VB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.
|
Original
|
T0340VB45G
T0340VB45G
T0340VB
d686* transistor
transistor c 2060
2008AN01
Westcode Semiconductors transistor
2060A
D-68623
westcode igbt
|
PDF
|
MJ 5030
Abstract: westcode igbt
Text: Date:- 18 Jun, 2003 Data Sheet Issue:- 2 Provisional Data Insulated Gate Bi-Polar Transistor Type T0250NA52E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 5200 V VDC link Permanent DC voltage for 100 FIT failure rate.
|
Original
|
T0250NA52E
MJ 5030
westcode igbt
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1849 Bi-CMOS IC LV5990M Low power consumption and high efficiency Step-down Switching Regulator Overview LV5990M is 1ch DC-DC converter with built-in power Pch MOS transistor. The recommended operating range is 4.5V to 18V. The maximum current is 3A. The operating current is about 90 A, and low power consumption is achieved.
|
Original
|
ENA1849
LV5990M
LV5990M
A1849-6/6
|
PDF
|
LV5990
Abstract: LV5990M diodes sy 360
Text: Ordering number : ENA1849 Bi-CMOS IC LV5990M Low power consumption and high efficiency Step-down Switching Regulator Overview LV5990M is 1ch DC-DC converter with built-in power Pch MOS transistor. The recommended operating range is 4.5V to 18V. The maximum current is 3A. The operating current is about 90 A, and low power consumption is achieved.
|
Original
|
ENA1849
LV5990M
LV5990M
360kHz.
A1849-6/6
LV5990
diodes sy 360
|
PDF
|
TRANSISTOR BI 185
Abstract: transistor bI 340 BI 340 cmos transistor 0.35 um
Text: 0.6um 1P3M High Voltage 40V / 40V updated in 2005.03.30 Features Voltage Logic,High Voltage 5V/5V,40V/40V Starting material P-type (100), 9~12 Ω-cm Well Structure CMOS Quadruple-Well ( Hnwell, Hpwell for HV-Device, Nwell, Pwell for LV-Device )
|
Original
|
0V/40V
TRANSISTOR BI 185
transistor bI 340
BI 340
cmos transistor 0.35 um
|
PDF
|
transistor bI 240
Abstract: transistor bI 340 TRANSISTOR BI 185 BI 340 BPSG
Text: 0.25um 1P5M Logic 2.5V / 5.0V / 30V updated in 2005.03.21 Features Vdd Core/IO/HV Starting Material Well Isolation Transistor Gate Length (Ldrawn) Channel Gate Oxide Gate Material LDD & Source/Drain Inter-Layer-Dielectric Metallization
|
Original
|
V/30V
30um2
36um2
transistor bI 240
transistor bI 340
TRANSISTOR BI 185
BI 340
BPSG
|
PDF
|
|
|
VE950
Abstract: TIP 642 transistor Fairchild FDV301N
Text: Le9502 Ringing Subscriber Line Interface Circuit VE950 Series APPLICATIONS DESCRIPTION ! Short/Medium Loop: approximately 2000 ft. of 26 AWG, Legerity’s Le9502 Ringing Subscriber Line Interface Circuit RSLIC device from the VE950 series has enhanced and
|
Original
|
Le9502
VE950
Le9502
TIP 642 transistor
Fairchild FDV301N
|
PDF
|
dual 4148 SOT-23
Abstract: buck-boost chopper BAV99 ON Semi LE77D112 VE950 diode din 4148 MZ2L-50R Le9502BTC 4148s DO-214AA package BAV99
Text: Le9502 Ringing Subscriber Line Interface Circuit VE950 Series APPLICATIONS ORDERING INFORMATION and 5 REN loads Voice over IP/DSL – Integrated Access Devices, Smart Residential Gateways, Home Gateway/Router Cable Telephony – NIU, Set-Top Box, Home Side Box,
|
Original
|
Le9502
VE950
44-pin
dual 4148 SOT-23
buck-boost chopper
BAV99 ON Semi
LE77D112
diode din 4148
MZ2L-50R
Le9502BTC
4148s
DO-214AA package BAV99
|
PDF
|
L9935
Abstract: POWERSO20 flayback
Text: L9935 TWO-PHASE STEPPER MOTOR DRIVER PRODUCT PREVIEW 2 X 1.1A FULL BRIDGE OUTPUTS INTEGRATED CHOPPING CURRENT REGULATION MINIMIZED POWER DISSIPATION DURING FLYBACK OUTPUT STAGES WITH CONTROLLED OUTPUT VOLTAGE SLOPES TO REDUCE ELECTROMAGNETIC RADIATION SHORT-CIRCUIT PROTECTION OF ALL
|
Original
|
L9935
POWERSO20
L9935
POWERSO20
flayback
|
PDF
|
dual 4148 SOT-23
Abstract: VE950
Text: Le9502 Ringing Subscriber Line Interface Circuit VE950 Series APPLICATIONS ORDERING INFORMATION Device Package Le9502BTC 44-pin eTQFP Green Package 1 ! Short/Medium Loop: approximately 2000 ft. of 26 AWG, and 5 REN loads ! Voice over IP/DSL – Integrated Access Devices, Smart
|
Original
|
Le9502
VE950
Le9502BTC
44-pin
2002/95/EC
Le9502
dual 4148 SOT-23
|
PDF
|
igbt circuit for induction melting
Abstract: TX116TA17E McMurray induction melting IGBT presspack T180 T2400GA45E tx116 snubbers
Text: An □ IX VS Company As a pioneer of press-pack Insulated Gate Bi-polar Transistor technology W estcode is able to offer a range of class leading devices with voltage ratings of 2.5 kV 1.25 kV DC link , 4.5 kV (2.8 kV DC link) and 1.7 kV currently in development.
|
OCR Scan
|
D-68623
igbt circuit for induction melting
TX116TA17E
McMurray
induction melting
IGBT presspack
T180
T2400GA45E
tx116
snubbers
|
PDF
|
1DI200H-055
Abstract: 1DI200H D1200F ETN81-055 1D1200K-055 1di50e-055 1DI200h055 1di100e 1DI75E-055 D1240A
Text: » COLLMER . - I SEMICONDUCTOR INC 2SE t Bi 2S3S712 OOOIOIS 0 • V i 33-J.f T -3 3 ' 3 5 :18 600 volts class power transistor modules Power transistors and free wheels are built into one package. All terminals are insulated from mounting plate. Best suited for m otor control applications with 2 2 0 to 2 4 0 volts inputs.
|
OCR Scan
|
EVK71-055
EVL31-055
EVL32-055
M203204
1DI75F-055
1DI100E-055
1DI100F-055
1D1150E-055
1D1150F-Q55
1D1150H-055
1DI200H-055
1DI200H
D1200F
ETN81-055
1D1200K-055
1di50e-055
1DI200h055
1di100e
1DI75E-055
D1240A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: n z z SGS-THOMSON li!iilD g[Si [llLi ¥MD(gi L9935 TWO-PHASE STEPPER MOTOR DRIVER PRODUCT PREVIEW • 2 X 1 .1 A FULL BRIDGE OUTPUTS ■ INTEGRATED CHOPPING CURRENT REGU LATION ■ MINIMIZED POWER DISSIPATION DURING FLYBACK ■ OUTPUT STAGES WITH CONTROLLED
|
OCR Scan
|
L9935
TYPICALLY20
POWERS020
L9935
|
PDF
|
transistor bI 340
Abstract: 2N3585
Text: 2N3585 SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3585 is Designed for General Purpose High Voltage Amplifier and Switching Applications. PACKAGE STYLE TO - 66 2.0 A 300 V o m lc < MAXIMUM RATINGS INCHES Pd is s 35 W @ Tc # 25 °C Tj -65 °C to +200 °C
|
OCR Scan
|
2N3585
2N3585
RAD8-89
transistor bI 340
|
PDF
|
m21 transistor
Abstract: FLAYBACK L9935
Text: SGS-TtiOMSON :ILI iriS3©K!lDgl L9935 TWO-PHASE STEPPER MOTOR DRIVER P R O D U C T P R E V IE W • 2 X 1 .1 A FULL BRIDGE OUTPUTS ■ INTEGRATED CHOPPING CURRENT REGU LATION ■ MINIMIZED POWER DISSIPATION DURING FLYBACK ■ OUTPUT STAGES WITH CONTROLLED
|
OCR Scan
|
L9935
TYPICALLY20
POWERS020
L9935
P0WERS02Q
m21 transistor
FLAYBACK
|
PDF
|
buv62
Abstract: No abstract text available
Text: 2 3 Ü 2 3 7 0 0 2 0 7 ^ 1 b • n ^ - 3 3 - I S SCS-THOMSON Ä 7# mm i l L iO T T I ^ Ù f f il lD O l r 7 z s c S G S-TH0MS0N B U V 6 2 30E » FAST SWITCHING POWER TRANSISTOR ■ FAST SWITCHING TIMES ■ LOW SWITCHING LOSSES ■ VERY LOW SATURATION VOLTAGE AND
|
OCR Scan
|
|
PDF
|
