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    TRANSISTOR BI 240 Search Results

    TRANSISTOR BI 240 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BI 240 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    shd4304

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD430204 TECHNICAL DATA DATA SHEET 1079, REV. Formerly part number SHD4304 PNP BI-POLAR POWER TRANSISTOR • Hermetic, Ceramic Package • Electrically Equivalent to 2N6193 • Surface Mount Package Absolute Maximum Ratings* Symbol


    Original     		PDF SHD4304 SHD430204 2N6193 shd4304

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD419204 TECHNICAL DATA DATA SHEET 1078, REV A. Formerly part number SHD4194 PNP BI-POLAR POWER TRANSISTOR • Hermetic, Ceramic Package • Electrically Equivalent to 2N6193 • Surface Mount Package Absolute Maximum Ratings* Symbol


    Original     		PDF SHD4194 SHD419204 2N6193

    SHD4264

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD426204 TECHNICAL DATA DATA SHEET 1092, REV. A Formerly part number SHD4264 PNP BI-POLAR POWER TRANSISTOR • Hermetic, Ceramic Package • Electrically Equivalent to 2N6193 Absolute Maximum Ratings* Symbol Parameter VCEO Collector-Emitter Voltage


    Original     		PDF SHD4264 SHD426204 2N6193 SHD4264

    T1200

    Abstract: D-68623 t1200ta25a westcode igbt
    Text: WESTCODE Date:- 27 Aug, 2002 Data Sheet Issue:- 2 An IXYS Company Provisional data Insulated Gate Bi-Polar Transistor Type T1200TA25A Development Type Number: TX033TA25A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage


    Original     		PDF T1200TA25A TX033TA25A) T1200TA25A T1200 D-68623 westcode igbt

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD418204/A/B TECHNICAL DATA DATA SHEET 1077, REV. – Formerly part number SHD4184/A/B PNP BI-POLAR POWER TRANSISTOR • Hermetic, Ceramic Package • Electrically Equivalent to 2N6193 • Surface Mount Package Absolute Maximum Ratings*


    Original     		PDF SHD4184/A/B SHD418204/A/B 2N6193

    T2400GB

    Abstract: No abstract text available
    Text: Date: - 21 Nov, 2011 Data Sheet Issue: - 1 Insulated Gate Bi-Polar Transistor Type T2400GB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate 2800


    Original     		PDF T2400GB45E T2400GB45E T2400GB

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Silicon Monolithic Bi-Polor Digital Integrated Circuit TD62783AP/F/AF TD62784AP/F/AF TD62783AP TD62784AP 8CH High Voltage Source Driver Product Description: These products are comprised of eight source current Transistor Arrays. These drivers are specifacally designed for flourescent


    Original     		PDF TD62783AP/F/AF TD62784AP/F/AF TD62783AP TD62784AP DIP18-P-300D: TD62783F/AF TD62784F/AF 500mA 400mA DIP-18pin

    Untitled

    Abstract: No abstract text available
    Text: Date: - 21 Nov, 2011 Data Sheet Issue: - 1 Insulated Gate Bi-Polar Transistor Type T2400GB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate 2800


    Original     		PDF T2400GB45E T2400GB45E

    T1200EB45E

    Abstract: No abstract text available
    Text: Date:- 19 Oct, 2009 Data Sheet Issue:- 1 Provisional Data Insulated Gate Bi-Polar Transistor Type T1200EB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate


    Original     		PDF T1200EB45E T1200EB45E

    T2400GA45E

    Abstract: T2400 D-68623
    Text: Date:- 5 March, 2007 Data Sheet Issue:- 2 Provisional Data Insulated Gate Bi-Polar Transistor Type T2400GA45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate


    Original     		PDF T2400GA45E T2400GA45E T2400 D-68623

    T1200EB

    Abstract: T1200EB45E LA 4750 n transistor polar D-68623 T1200 133nF Gate Drive Characteristics IGBT1200A
    Text: Date:- 19 Oct, 2009 Data Sheet Issue:- 1 Provisional Data Insulated Gate Bi-Polar Transistor Type T1200EB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate


    Original     		PDF T1200EB45E T1200EB45E T1200EB LA 4750 n transistor polar D-68623 T1200 133nF Gate Drive Characteristics IGBT1200A

    Untitled

    Abstract: No abstract text available
    Text: Date:- 1 April, 2011 Data Sheet Issue:- A2 Advance Data Insulated Gate Bi-Polar Transistor Type T2400GB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate


    Original     		PDF T2400GB45E T2400GB45E

    IC500A

    Abstract: t0800ta45e D-68623 T0800 transistor D 982
    Text: Date:- 14 Dec, 2005 Data Sheet Issue:- 1 Provisional Data Insulated Gate Bi-Polar Transistor Type T0800TA45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate


    Original     		PDF T0800TA45E T0800TA45E IC500A D-68623 T0800 transistor D 982

    Untitled

    Abstract: No abstract text available
    Text: DC60 Series • Bi-polar transistor output • Ratings from 3A to 7A @ 60 VDC • AC or DC control PRODUCT SELECTION Control Voltage 3.5-32 VDC 90-280 VAC 3A 5A 7A DC60S3 DC60SA3 DC60S5 DC60SA5 DC60S7 DC60SA7 AVAILABLE OPTIONS OUTPUT SPECIFICATIONS 1 Description


    Original     		PDF DC60S3 DC60SA3 DC60S5 DC60SA5 DC60S7 DC60SA7 47-63Hz)

    Untitled

    Abstract: No abstract text available
    Text: DC60 Series • Bi-polar transistor output • Ratings from 3A to 7A @ 60 VDC • AC or DC control PRODUCT SELECTION Control Voltage 3.5-32 VDC 90-280 VAC 3A 5A 7A DC60S3 DC60SA3 DC60S5 DC60SA5 DC60S7 DC60SA7 AVAILABLE OPTIONS OUTPUT SPECIFICATIONS 1 Description


    Original     		PDF DC60S3 DC60SA3 DC60S5 DC60SA5 DC60S7 DC60SA7 Min0/60Hz)

    Untitled

    Abstract: No abstract text available
    Text: DC60 Series • Bi-polar transistor output • Ratings from 3A to 7A @ 60 VDC • AC or DC control PRODUCT SELECTION Control Voltage 3.5-32 VDC 90-280 VAC 3A 5A 7A DC60S3 DC60SA3 DC60S5 DC60SA5 DC60S7 DC60SA7 AVAILABLE OPTIONS OUTPUT SPECIFICATIONS 1 Description


    Original     		PDF DC60S3 DC60SA3 DC60S5 DC60SA5 DC60S7 DC60SA7

    Untitled

    Abstract: No abstract text available
    Text: WESTCODE An Date:- 23 Aug, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0360NB25A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.


    Original     		PDF T0360NB25A T0360NB25A

    DC60S3

    Abstract: DC60S5 DC60S7 DC60SA3 DC60SA5 DC60SA7 E116950
    Text: DC60 Series • Bi-polar transistor output • Ratings from 3A to 7A @ 60 VDC • AC or DC control • UL and cUL Recognized E116950 PRODUCT SELECTION Control Voltage 3.5-32 VDC 90-280 VAC 3A 5A 7A DC60S3 DC60SA3 DC60S5 DC60SA5 DC60S7 DC60SA7 AVAILABLE OPTIONS


    Original     		PDF E116950) DC60S3 DC60SA3 DC60S5 DC60SA5 DC60S7 DC60SA7 E116950 DC60S3 DC60S5 DC60S7 DC60SA3 DC60SA5 DC60SA7 E116950

    T0360NB25A

    Abstract: igbt1 T0360NB T0360
    Text: WESTCODE An Date:- 23 Aug, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0360NB25A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.


    Original     		PDF T0360NB25A T0360NB25A igbt1 T0360NB T0360

    T1200TB

    Abstract: transistor 7830 diode current 1200A
    Text: WESTCODE An Date:- 12 Jan, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T1200TB25A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.


    Original     		PDF T1200TB25A T1200TB25A T1200TB transistor 7830 diode current 1200A

    T0850VB

    Abstract: No abstract text available
    Text: WESTCODE An Date:- 21 Jan, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0850VB25E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.


    Original     		PDF T0850VB25E T0850VB25E T0850VB

    Untitled

    Abstract: No abstract text available
    Text: WESTCODE An Date:- 12 Jan, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T1200TB25A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.


    Original     		PDF T1200TB25A T1200TB25A

    Untitled

    Abstract: No abstract text available
    Text: WESTCODE An Date:- 21 Jan, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0850VB25E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.


    Original     		PDF T0850VB25E T0850VB25E

    T2400GA45E

    Abstract: MJ6000 T2400
    Text: Date:- 22 Nov, 2005 Data Sheet Issue:- 1 Prospective Data    Insulated Gate Bi-Polar Transistor Type T2400GA45E Absolute Maximum Ratings MAXIMUM LIMITS VOLTAGE RATINGS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate


    Original     		PDF T2400GA45E VCES/100 T2400GA45E MJ6000 T2400