shd4304
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD430204 TECHNICAL DATA DATA SHEET 1079, REV. Formerly part number SHD4304 PNP BI-POLAR POWER TRANSISTOR • Hermetic, Ceramic Package • Electrically Equivalent to 2N6193 • Surface Mount Package Absolute Maximum Ratings* Symbol
|
Original
|
SHD4304
SHD430204
2N6193
shd4304
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD419204 TECHNICAL DATA DATA SHEET 1078, REV A. Formerly part number SHD4194 PNP BI-POLAR POWER TRANSISTOR • Hermetic, Ceramic Package • Electrically Equivalent to 2N6193 • Surface Mount Package Absolute Maximum Ratings* Symbol
|
Original
|
SHD4194
SHD419204
2N6193
|
PDF
|
SHD4264
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD426204 TECHNICAL DATA DATA SHEET 1092, REV. A Formerly part number SHD4264 PNP BI-POLAR POWER TRANSISTOR • Hermetic, Ceramic Package • Electrically Equivalent to 2N6193 Absolute Maximum Ratings* Symbol Parameter VCEO Collector-Emitter Voltage
|
Original
|
SHD4264
SHD426204
2N6193
SHD4264
|
PDF
|
T1200
Abstract: D-68623 t1200ta25a westcode igbt
Text: WESTCODE Date:- 27 Aug, 2002 Data Sheet Issue:- 2 An IXYS Company Provisional data Insulated Gate Bi-Polar Transistor Type T1200TA25A Development Type Number: TX033TA25A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage
|
Original
|
T1200TA25A
TX033TA25A)
T1200TA25A
T1200
D-68623
westcode igbt
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD418204/A/B TECHNICAL DATA DATA SHEET 1077, REV. – Formerly part number SHD4184/A/B PNP BI-POLAR POWER TRANSISTOR • Hermetic, Ceramic Package • Electrically Equivalent to 2N6193 • Surface Mount Package Absolute Maximum Ratings*
|
Original
|
SHD4184/A/B
SHD418204/A/B
2N6193
|
PDF
|
T2400GB
Abstract: No abstract text available
Text: Date: - 21 Nov, 2011 Data Sheet Issue: - 1 Insulated Gate Bi-Polar Transistor Type T2400GB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate 2800
|
Original
|
T2400GB45E
T2400GB45E
T2400GB
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA Silicon Monolithic Bi-Polor Digital Integrated Circuit TD62783AP/F/AF TD62784AP/F/AF TD62783AP TD62784AP 8CH High Voltage Source Driver Product Description: These products are comprised of eight source current Transistor Arrays. These drivers are specifacally designed for flourescent
|
Original
|
TD62783AP/F/AF
TD62784AP/F/AF
TD62783AP
TD62784AP
DIP18-P-300D:
TD62783F/AF
TD62784F/AF
500mA
400mA
DIP-18pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Date: - 21 Nov, 2011 Data Sheet Issue: - 1 Insulated Gate Bi-Polar Transistor Type T2400GB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate 2800
|
Original
|
T2400GB45E
T2400GB45E
|
PDF
|
T1200EB45E
Abstract: No abstract text available
Text: Date:- 19 Oct, 2009 Data Sheet Issue:- 1 Provisional Data Insulated Gate Bi-Polar Transistor Type T1200EB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate
|
Original
|
T1200EB45E
T1200EB45E
|
PDF
|
T2400GA45E
Abstract: T2400 D-68623
Text: Date:- 5 March, 2007 Data Sheet Issue:- 2 Provisional Data Insulated Gate Bi-Polar Transistor Type T2400GA45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate
|
Original
|
T2400GA45E
T2400GA45E
T2400
D-68623
|
PDF
|
T1200EB
Abstract: T1200EB45E LA 4750 n transistor polar D-68623 T1200 133nF Gate Drive Characteristics IGBT1200A
Text: Date:- 19 Oct, 2009 Data Sheet Issue:- 1 Provisional Data Insulated Gate Bi-Polar Transistor Type T1200EB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate
|
Original
|
T1200EB45E
T1200EB45E
T1200EB
LA 4750 n
transistor polar
D-68623
T1200
133nF
Gate Drive Characteristics
IGBT1200A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Date:- 1 April, 2011 Data Sheet Issue:- A2 Advance Data Insulated Gate Bi-Polar Transistor Type T2400GB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate
|
Original
|
T2400GB45E
T2400GB45E
|
PDF
|
IC500A
Abstract: t0800ta45e D-68623 T0800 transistor D 982
Text: Date:- 14 Dec, 2005 Data Sheet Issue:- 1 Provisional Data Insulated Gate Bi-Polar Transistor Type T0800TA45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate
|
Original
|
T0800TA45E
T0800TA45E
IC500A
D-68623
T0800
transistor D 982
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DC60 Series • Bi-polar transistor output • Ratings from 3A to 7A @ 60 VDC • AC or DC control PRODUCT SELECTION Control Voltage 3.5-32 VDC 90-280 VAC 3A 5A 7A DC60S3 DC60SA3 DC60S5 DC60SA5 DC60S7 DC60SA7 AVAILABLE OPTIONS OUTPUT SPECIFICATIONS 1 Description
|
Original
|
DC60S3
DC60SA3
DC60S5
DC60SA5
DC60S7
DC60SA7
47-63Hz)
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: DC60 Series • Bi-polar transistor output • Ratings from 3A to 7A @ 60 VDC • AC or DC control PRODUCT SELECTION Control Voltage 3.5-32 VDC 90-280 VAC 3A 5A 7A DC60S3 DC60SA3 DC60S5 DC60SA5 DC60S7 DC60SA7 AVAILABLE OPTIONS OUTPUT SPECIFICATIONS 1 Description
|
Original
|
DC60S3
DC60SA3
DC60S5
DC60SA5
DC60S7
DC60SA7
Min0/60Hz)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DC60 Series • Bi-polar transistor output • Ratings from 3A to 7A @ 60 VDC • AC or DC control PRODUCT SELECTION Control Voltage 3.5-32 VDC 90-280 VAC 3A 5A 7A DC60S3 DC60SA3 DC60S5 DC60SA5 DC60S7 DC60SA7 AVAILABLE OPTIONS OUTPUT SPECIFICATIONS 1 Description
|
Original
|
DC60S3
DC60SA3
DC60S5
DC60SA5
DC60S7
DC60SA7
|
PDF
|
Untitled
Abstract: No abstract text available
Text: WESTCODE An Date:- 23 Aug, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0360NB25A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.
|
Original
|
T0360NB25A
T0360NB25A
|
PDF
|
DC60S3
Abstract: DC60S5 DC60S7 DC60SA3 DC60SA5 DC60SA7 E116950
Text: DC60 Series • Bi-polar transistor output • Ratings from 3A to 7A @ 60 VDC • AC or DC control • UL and cUL Recognized E116950 PRODUCT SELECTION Control Voltage 3.5-32 VDC 90-280 VAC 3A 5A 7A DC60S3 DC60SA3 DC60S5 DC60SA5 DC60S7 DC60SA7 AVAILABLE OPTIONS
|
Original
|
E116950)
DC60S3
DC60SA3
DC60S5
DC60SA5
DC60S7
DC60SA7
E116950
DC60S3
DC60S5
DC60S7
DC60SA3
DC60SA5
DC60SA7
E116950
|
PDF
|
T0360NB25A
Abstract: igbt1 T0360NB T0360
Text: WESTCODE An Date:- 23 Aug, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0360NB25A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.
|
Original
|
T0360NB25A
T0360NB25A
igbt1
T0360NB
T0360
|
PDF
|
T1200TB
Abstract: transistor 7830 diode current 1200A
Text: WESTCODE An Date:- 12 Jan, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T1200TB25A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.
|
Original
|
T1200TB25A
T1200TB25A
T1200TB
transistor 7830
diode current 1200A
|
PDF
|
T0850VB
Abstract: No abstract text available
Text: WESTCODE An Date:- 21 Jan, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0850VB25E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.
|
Original
|
T0850VB25E
T0850VB25E
T0850VB
|
PDF
|
Untitled
Abstract: No abstract text available
Text: WESTCODE An Date:- 12 Jan, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T1200TB25A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.
|
Original
|
T1200TB25A
T1200TB25A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: WESTCODE An Date:- 21 Jan, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0850VB25E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.
|
Original
|
T0850VB25E
T0850VB25E
|
PDF
|
T2400GA45E
Abstract: MJ6000 T2400
Text: Date:- 22 Nov, 2005 Data Sheet Issue:- 1 Prospective Data Insulated Gate Bi-Polar Transistor Type T2400GA45E Absolute Maximum Ratings MAXIMUM LIMITS VOLTAGE RATINGS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate
|
Original
|
T2400GA45E
VCES/100
T2400GA45E
MJ6000
T2400
|
PDF
|
