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    TRANSISTOR BG 23 Search Results

    TRANSISTOR BG 23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BG 23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOT540A

    Abstract: 821 ceramic capacitor BLF861 data sheet BLF861
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF861 UHF power LDMOS transistor Product specification Supersedes data of 2000 Feb 18 2000 May 23 Philips Semiconductors Product specification UHF power LDMOS transistor BLF861 FEATURES PINNING - SOT540A • High power gain


    Original     		PDF M3D392 BLF861 OT540A 613524/09/pp16 SOT540A 821 ceramic capacitor BLF861 data sheet BLF861

    LTC3810

    Abstract: DC952A BAS19W Si7852DP ZXMN10A07F TP3-TP11 sis 964 100v boost
    Text: DEMO CIRCUIT 952 QUICK STARTLTC3810 GUIDE LTC3810 Current Mode Synchronous Switching Regulator Controller DESCRIPTION Demonstration circuit 952 is a current mode synchronous switching regulator featuring the LTC3810. The circuit is configured as a synchronous step-down regulator operating at 230kHz


    Original     		PDF LTC3810 LTC3810 LTC3810. 230kHz DC952A BAS19W Si7852DP ZXMN10A07F TP3-TP11 sis 964 100v boost

    MARKING SMD PNP TRANSISTOR

    Abstract: PNP Epitaxial Silicon Transistor sot-23 BCX71G
    Text: Transistors IC SMD Type General Purpose Transistor BCX71G SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 PNP Epitaxial Silicon Transistor 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1


    Original     		PDF BCX71G OT-23 -10mA, -50mA, MARKING SMD PNP TRANSISTOR PNP Epitaxial Silicon Transistor sot-23 BCX71G

    Untitled

    Abstract: No abstract text available
    Text: TPS5300 IMVP MOBILE POWER SUPPLY CONTROLLER SLVS334 – DECEMBER 2000 D Single-Chip Speed Step Solution D Hysteretic Controller Provides Fast D D D D D D D D D D D DRV_CLK VSENSE_CLK DT_SET ANAGND VSENSE_CORE SLOWST VREFB VHYST OCP DROOP IOUT PSM/LATCH IS–


    Original     		PDF TPS5300 SLVS334

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet 5-CHANNEL MOTOR DRIVER IC AZ9259 General Description Features The AZ9259 is a monolithic integrated circuit, and suitable for 5-channel motor driver which drives focus actuator, tracking actuator, sled motor, spindle motor and loading motor of VCD system.


    Original     		PDF AZ9259 AZ9259 HSOP-28 C6-21-6485

    PTH60G30BD150N

    Abstract: PTH62H02AR180M265 PTH59F PTH61
    Text: POSISTORS FO R C IR C U IT PRO TECTIO N PTH9M/59F SERIES FOR POWER TRANSISTOR OVERHEAT PROTECTION PTH9M Part Number * PTH9M04D471TS2F333 PTH59F04D471TS PTH9M04D222TS2F333 ♦PTH59F04D222TS □ BH BG TS 70 25 °C Resistance TS-10 (°C) TS (°C) Max. Voltage


    OCR Scan     		PDF PTH9M/59F PTH9M04D471TS2F333 PTH59F04D471TS PTH9M04D222TS2F333 PTH59F04D222TS TS-10 PTH59F 176-194F PTH60G30BD150N PTH62H02AR180M265 PTH59F PTH61

    bg 22 transistor

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch BUK203-50Y For maintenance only. Do not use for design-in. DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured


    OCR Scan     		PDF BUK203-50Y 3-50Y bg 22 transistor

    PowerMOS transistor TOPFET high side switch

    Abstract: 100-P BUK200-50X
    Text: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.


    OCR Scan     		PDF BUK200-50X OT263 T0220 PowerMOS transistor TOPFET high side switch 100-P BUK200-50X

    BUK202-50X

    Abstract: PowerMOS transistor TOPFET high side switch BUK202
    Text: Product specification Philips Semiconductors PowerMOS transistor BUK202-50X TOPFET high side DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured


    OCR Scan     		PDF BUK202-50X OT263 T0220 BUK202-50X PowerMOS transistor TOPFET high side switch BUK202

    PowerMOS transistor TOPFET high side switch

    Abstract: 100-P BUK200-50Y C6560
    Text: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.


    OCR Scan     		PDF BUK200-50Y OT263 T0220 PowerMOS transistor TOPFET high side switch 100-P BUK200-50Y C6560

    BU 103 A transistor

    Abstract: transistor BG 23 0/transistor BG 23
    Text: Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch BUK200-50Y For maintenance only. Do not use for design-in. DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured


    OCR Scan     		PDF BUK200-50Y BU 103 A transistor transistor BG 23 0/transistor BG 23

    BUK202-50Y

    Abstract: PowerMOS transistor TOPFET high side switch
    Text: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.


    OCR Scan     		PDF BUK202-50Y OT263 T0220 BUK202-50Y PowerMOS transistor TOPFET high side switch

    5V VSG MOSFET

    Abstract: high side switch PowerMOS transistor TOPFET high side switch BUK203-50X TOPFET high side switch
    Text: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.


    OCR Scan     		PDF BUK203-50X OT263 T0220 5V VSG MOSFET high side switch PowerMOS transistor TOPFET high side switch BUK203-50X TOPFET high side switch

    BUK201-50Y

    Abstract: No abstract text available
    Text: This Material Copyrighted By Its Respective Manufacturer Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch BUK201-50Y LIMITING VALUES Limiting values in accordance with the Absolute Maximum System I EC 134 SYM BOL PARAMETER


    OCR Scan     		PDF BUK201-50Y OT263 T0220 BUK201-50Y

    Transistor Vb

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch BUK202-50Y For maintenance only. Do not use for design-in. DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured


    OCR Scan     		PDF BUK202-50Y Transistor Vb

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR BCX71G GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Symbol


    OCR Scan     		PDF BCX71G OT-23 MMBT5086

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR BCX71G GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C h a r a c t e r is t i c Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


    OCR Scan     		PDF BCX71G OT-23 KS5086 -50nA -10mA, -50mA,

    buk201

    Abstract: PowerMOS transistor TOPFET high side switch BUK201-50X
    Text: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.


    OCR Scan     		PDF BUK201-50X OT263 T0220 buk201 PowerMOS transistor TOPFET high side switch BUK201-50X

    10A 600 VOLT DIODE

    Abstract: transistor 13a 600v westinghouse DIODES 827 d transistor KE72
    Text: 7294621 POWEREX INC ]>Ë 72T4b21 0000141 5 | Six/Pac Darlington TRANSISTOR Modules Dim A B C D E F Q H J K L M N P Q R S T U ' Inches 4.13 Max 3.86 ±.01 3.190 .236 .472 1.33 Max .335 .709 .827 .276 .453 .472 .394 .531 .197 1.181 .787 .118 .213 T-33-35 10 Amperes


    OCR Scan     		PDF 72T4b21 T-33-35 KE724S0110 T-33- KE72450110 10A 600 VOLT DIODE transistor 13a 600v westinghouse DIODES 827 d transistor KE72

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK203-50X TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured


    OCR Scan     		PDF BUK203-50X BUK203-5QX BUK203-50X

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.


    OCR Scan     		PDF BUK200-50X

    pfe 225

    Abstract: K203 EUK203-50X
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK203-50X TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured


    OCR Scan     		PDF BUK203-50X BUK203-50X pfe 225 K203 EUK203-50X

    BUK202-50Y

    Abstract: buk20250y
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK202-50Y TOPFET high side DESCRIPTION Monolithic temperature and overload protected power switch based on M O SFET technology in a 5 pin plastic envelope, configured


    OCR Scan     		PDF BUK202-50Y BUK202-50Y buk20250y

    Telefunken U 3082 M

    Abstract: U3082M u175m U254B U244B U2066B U3088 TDSR 5150 pin tdsr 5150 U2097B
    Text: TELEFUNKEN ELECTRONI C M4E D j^SQCHL. DOlliaT 2 B I A L GG Display Drivers ; , iT -S Z -O -* ! U 1 2 3 P • Photo pulse am plifier Features: • Integrated operational ampli­ fier and photo detector on one chip • External controlled photo sensitivity through R2 . 3


    OCR Scan     		PDF T3079 35-Bit Telefunken U 3082 M U3082M u175m U254B U244B U2066B U3088 TDSR 5150 pin tdsr 5150 U2097B