BFX60
Abstract: Q60206-X60 H7B marking H7B transistor H7B* marking microphone
Text: SIEMENS BFX 60 NPN Silicon RF Transistor • For broadband amplifiers at collector currents up to 15 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFX 60 BFX 60 Q60206-X60 Pin Configuration 1 2
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BFX60
BFX60
Q60206-X60
023SbOS
fl23SbD5
H7B marking
H7B transistor
H7B* marking
microphone
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Transistor BFX 59
Abstract: Transistor BFX 25 BFX59 Transistor BFX 4 bfx 34 transistor marking code 7C transistor BFX59 MARKING 7C RF NPN POWER TRANSISTOR C 10-50 GHZ BFX59F
Text: SIEMENS NPN Silicon RF Transistor BFX59 BFX 59F • For broadband amplifiers at collector currents up to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code B FX 59 B FX 59F BFX 59 BFX 59F Q60206-X59
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Q60206-X59
Q60206-X59-S5
GQb747E
BFX59
ehtq8q44
6235b05
D0L7473
Transistor BFX 59
Transistor BFX 25
Transistor BFX 4
bfx 34
transistor marking code 7C
transistor BFX59
MARKING 7C
RF NPN POWER TRANSISTOR C 10-50 GHZ
BFX59F
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BFX89
Abstract: Transistor BFX 90 BFX 514 Q62702-F296 Q 371 Transistor 2sc 684
Text: 2SC D • û23ShQS 000474^ 4 W S I E ù T ~ Z 'tï NPN Silicon Transistor for RF Broadband Amplifier BFX 89 - SIEMENS AKTIENGESELLSCHAF BFX 89 is an epitaxial NPN silicon RF transistor in TO 72 case (18 A 4 DIN 41876 . The leads are electrically insulated from the case. This transistor is suitable for general
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23ShQS
Q62702-F296
2JS41W
BFX89
Transistor BFX 90
BFX 514
Q62702-F296
Q 371 Transistor
2sc 684
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BFX60
Abstract: Transistor BFX 90 bfx 63 Q60206-X60
Text: N PISI-Transistor für H F-Verstärkerstufen BFX 60 BFX 60 ist ein epitaktischer NPN-Silizium-Planar-HF-Transistor im Gehäuse 18 A 4 DIN 41 876 T O -7 2 , jedoch mit abweichender Anschlußfolge. Die Anschlüsse sind vom Ge häuse elektrisch isoliert.
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BFX60
Q60206-X60
Transistor BFX 90
bfx 63
Q60206-X60
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Transistor BFX 41
Abstract: Transistor BFX 25 Q60206-X55 B63310-A3004-X025 B63310 Scans-0010547
Text: B F X 55 N P N i-T ran sistor für V H F -E n d stu fe n in A ntennenverstärkern BFX 55 ist ein epitaktischer NPN-Silizium-Planar-Transistor im Gehäuse 5 C 3 DIN 41 873 TO-39 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Der Transistor BFX 55
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Q60206-X55
150mA
Transistor BFX 41
Transistor BFX 25
Q60206-X55
B63310-A3004-X025
B63310
Scans-0010547
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BFX89
Abstract: F296 Q62702 Scans-0010548 transistor TO-72 Transistor BFX Transistor BFX 41
Text: NPIVI-Transistor fü r A n ten n en verstärker BFX 89 BFX 89 ist ein epitaktischer NPN-Silizium-HF-Transistor im Gehäuse 18 A 4 DIN 41 876 T O -7 2 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Der Transistor ist für allge meine Anwendungen bis in den GHz-Bereich geeignet, z.B. für Antennen- und Hochfre
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BFX89
Q62702â
F296
Q62702
Scans-0010548
transistor TO-72
Transistor BFX
Transistor BFX 41
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Transistor BFX 90
Abstract: transistor bfx 73 BFX 514 BFX89 b 514 transistor
Text: 2SC D • û23ShQS 000474^ 4 W S I E ù NPN Silicon Transistor for RF Broadband Amplifier T ~ Z 'tï BFX 89 -SIEMENS AKTIEN GE SE LL SC HA F BFX 89 is an epitaxial NPN silicon RF transistor in TO 72 case (18 A 4 DIN 41876 . The leads are electrically insulated from the case. This transistor is suitable for general
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23ShQS
Q62702-F296
Transistor BFX 90
transistor bfx 73
BFX 514
BFX89
b 514 transistor
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BFX48
Abstract: No abstract text available
Text: BFX 48 SILICON PLANAR PNP HIG H-FREQ UENCY A M PLIFIER The BFX 48 is a silicon planar epitaxial PNP transistor in Jedec TO -18 metal case. It is suitable for a wide range of applications including low noise, low current high gain RF and wide band pulse amplifiers.
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BFX48
BFX48
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BFX59
Abstract: transistor BFX59 transistor BC 336 kbr 1000 Transistor BFX 59
Text: BFX59 NPN Transistor for low-power driver and output stages in antenna amplifiers BFX 59 is an epitaxial NPN silicon planar RF transistor in a case 18 A 4 DIN 41 876 TO-72 . The leads are electrically insulated from the case. BFX 59 is suitable for use in low -pow er amplifier, driver and power stages at frequencies up to the UHF range.
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BFX59
Q60206-X59
BFX59
transistor BFX59
transistor BC 336
kbr 1000
Transistor BFX 59
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transistor bfx 73
Abstract: BFX20 Transistor BFX 25
Text: BFX 20 SILICON PLANAR NPN 450 MHz LOW-NOISE, SMALL SIGNAL AMPLIFIER The BFX 20 is a high frequency silicon planar NPN transistor in Jedec T O -7 2 metal case. It is specifically designed fo r low noise, small signal am plifiers and is p a rticularly suitable fo r the
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BFX20
transistor bfx 73
BFX20
Transistor BFX 25
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Transistor BFX 59
Abstract: BFX59F BFX59 kbr 1000 Q60206-X transistor BFX59 transistor w 04 59 Transistor BFX 4
Text: BFX 59 F NPN Transistor for driver and output stages in antenna amplifiers BFX 59 F is an epitaxial N P N silicon planar RF transistor in a case 18 A 4 D IN 41 876 TO-72 . The leads are electrically insulated from the case. B FX 59 F is suitable for use in low-power driver and output stages up to the U H F range, especially at a higher
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Q60206-X
Transistor BFX 59
BFX59F
BFX59
kbr 1000
transistor BFX59
transistor w 04 59
Transistor BFX 4
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tfk 325
Abstract: BFX340 bfx 34 tfk B tfk transistor BFX34
Text: W BFX 34 O Silizium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Planar Transistor Anwendungen: H ochstrom schalter, Relaistreiber, Leistungsverstärker, Strom bis 5 A Applications: High current switches, relay drivers, and p o w e r am plifiers, current up to 5 A
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BFX62
Abstract: Transistor BFX 25 Transistor BFX 4 Transistor BFX
Text: BFX62 NPN Transistor for amplifier and oscillator stages up to 1 GHz BFX 62 is an NPN silicon planar transistor in a case 18A 4 DIN 41876 TO-72 . The leads are insulated from the case. The transistor is particularly suitable for amplifier and oscillator stages at frequencies up to 1 GHz.
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BFX62
Q60206-X
-C12e
BFX62
Transistor BFX 25
Transistor BFX 4
Transistor BFX
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BFX60
Abstract: p21e Q60206-X 510Z5 bfx 63 transistor for RF amplifier
Text: BFX60 NPN Transistor for RF amplifier stages BFX 60 is an epitaxial NPN silicon planar RF transistor in a case 18 A 4 DIN 41876 T O -7 2 , with different lead arrangement however. The leads are electrically insulated from the case. The transistor is particularly suitable for common-emitter RF amplifier
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BFX60
BFX60
Q60206-X
p21e
510Z5
bfx 63
transistor for RF amplifier
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BFX48
Abstract: No abstract text available
Text: BFX48 SILICON PLANAR PNP H IGH-FREQUENCY AMPLIFIER The BFX 48 is a silicon planar epitaxial PNP transistor in Jedec T O -1 8 metal case. It is suitable fo r a wide range o f applications including lo w noise, low current high gain RF and wide band pulse am plifiers.
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BFX48
BFX48
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3004x
Abstract: SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M
Text: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j/ 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS A K T IE NÖES EL LS CH AF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for
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fl23SbOS
0G04737
Q60206-X55
BFX55
23SbOS
150mA
3004x
SIEMENS B 58 451
GE 639 transistor
2114D
transistor bfx 73
STATIC RAM 2114
Q2114
tic 2116 M
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npntransistor
Abstract: BFX62
Text: BFX 62 Nicht für N euentw icklung N P N -Transisto r für regelbare V erstärker und O szillatorstufen bis 1 G H z B FX 62 ist ein NPN-Silizium-Planar-HF-Transistor im Gehäuse 18A4 DIN 41 876 TO -7 2 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert.
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BFX62
Q60206-X62
npntransistor
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BFX34
Abstract: No abstract text available
Text: r z 7 S C S -T H O M S O N ^ 7 # BFX34 m HIGH CURRENT, GENERAL PURPOSE TRANSISTOR D E S C R IP T IO N The BFX 34 is a silicon epitaxial planar NPN tran sistor in Jedec TO-39 metal case, intended for high current applications. Very low saturation voltage and high speed at high
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BFX34
BFX34
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BFX17
Abstract: No abstract text available
Text: SILICON PLANAR NPN B F X 17 CLA SS C V H F A M P L IF IE R The BFX 17 is a silicon planar epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-voltage, high-current class C VHF amplifier applications. A B S O L U T E M A X I M U M R A T IN G S
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BFX17
O-391
BFX17
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transistor BC 584
Abstract: TRANSISTOR BC 456 Transistor BC 585 transistor BC 583 D 92 02 78.P BFW 10 fet Transistor BFX 41 TRANSISTOR BC 416 b BC583 transistor BC 548
Text: 6091788 MICRO ELECTRONICS C ORP 820 0064 5 05 DE § b D T 1 7 f l a QODGbMS 4 | TYPE NO. POLARITY Low Level and General Purpose Amplifiers H MAXIMUM RATINGS V CE SAT FE Cob N.F. max max (MHz) (pF) (dB) — 200+ 150 150 150 150 2.7+ 4.5 4.5 4.5 6 2 10 10 4
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bDT17fla
O-92F
to-02
melf-002.
transistor BC 584
TRANSISTOR BC 456
Transistor BC 585
transistor BC 583
D 92 02 78.P
BFW 10 fet
Transistor BFX 41
TRANSISTOR BC 416 b
BC583
transistor BC 548
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HBF4727A
Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
Text: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product
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transistor bf 184
Abstract: pnp vhf transistor TO50 transistor transistor BF 509 BF 914 transistor BF 184 transistor transistor BF 451
Text: m ils Uli S.A. TYPE NPN PNP BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF 115 167 173 173S 180 181 184 185 198 199 200 214 215 240 241 254 255 BF BF BF BF BF 6 BF BF BF BF 272A 272B 316A 450 451 479 506 509 914 BFX 89 BFY 90 $ BFW 94 2N 918 2N 4957 2N 4958
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5109B
O-92a
transistor bf 184
pnp vhf transistor
TO50 transistor
transistor BF 509
BF 914 transistor
BF 184 transistor
transistor BF 451
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TRANSISTOR BO 346
Abstract: BFX89 case BFX89 Power Transisitor 100V 2A Q62702-F296
Text: B FX89 NPN Transistor for antenna amplifiers B F X 89 is an epitaxial N P N silicon RF transistor in a case 1 8 A 4 D IN 41876 TO-72 . The leads are electrically insulated from the case. This transistor is suitable for general applications and, for instance, for use in antenna and RF amplifiers up into the GHz
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BFX89
BFX89
Q62702-F296
TRANSISTOR BO 346
case BFX89
Power Transisitor 100V 2A
Q62702-F296
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BLW16
Abstract: BLW25 S0104 BLY78 BLY85 Transistor BFX 59 BFW 100 transistor bly93a BLY-38 BLW11
Text: BLW16 SILICON NPN VHF POWER TRANSISTOR 271 HIGH GAIN VH F MEDIUM POWER TRANSISTOR • • • • 1.4 W at 175 MHz Greater than 10 dB Gain Distributed Construction Interdigital Geometry mechanical data absolute maximum ratings T^ase s 25 °C Collector-Base V o lt a g e .36 V
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BLW16
O-117
T0-60CE
S0-104
SO-104
BLW16
BLW25
S0104
BLY78
BLY85
Transistor BFX 59
BFW 100 transistor
bly93a
BLY-38
BLW11
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