TRANSISTOR BFW 11 Search Results

TRANSISTOR BFW 11 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR BFW 11 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BFW92 Abstract: No abstract text available Text: SIEMENS BFW 92 NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFW 92 BFW 92 Q62702-F321 Pin Configuration	OCR Scan	Q62702-F321 fl235b05 35bQ5 Q0b747Q BFW92	PDF
TRANSISTOR BFW 11 Abstract: bfw 10 transistor GPA 76 transistor 2sc 546 transistor bfw 83 Text: I ESC D • 053SbOS 0004734 2 ■ S I E û ! NPN Silicon RF Broadband Transistor BFW 93 design SIEMENS AKTIENÔESELLSCHAF Not for new CAI - - BFW 93 is an epitaxial NPN silicon planar RF transistor in a plastic packageof low capacitance, similar to TO 119 50 B 3 DIN 41867 . The transistor is particularly suitable for use	OCR Scan	053SbOS Q62702-F365 a23SbQS 00DM73b TRANSISTOR BFW 11 bfw 10 transistor GPA 76 transistor 2sc 546 transistor bfw 83	PDF
TRANSISTOR BFW 11 Abstract: BFW92 Transistor BFw 92 bfw 10 transistor transistor BFW 10 bfw 16 transistor BFW 100 transistor "RF Amplifiers" Q62702-F321 BFW 92 Text: BFW92 NPN Silicon planar RF transistor BFW 92 is an epitaxial NPN silicon planar RF transistor in a plastic package 50 B 3 DIN 41867 fo r use as RF am plifiers up in to the GHz range, e.g. fo r broadband antenna amplifiers. T ype O rd e r n u m b e r BFW 92	OCR Scan	BFW92 BFW92 Q62702-F321 00K/W TRANSISTOR BFW 11 Transistor BFw 92 bfw 10 transistor transistor BFW 10 bfw 16 transistor BFW 100 transistor "RF Amplifiers" Q62702-F321 BFW 92	PDF
TRANSISTOR b 772 p Abstract: bfw 16 transistor BFW 72 TRANSISTOR BFW 16 Text: E5C D • fi235bQS 0004725 1 H S I E 6 NPN Silicon RF Broadband Transistor BFW 16 A SIEMENS AKTIENGESELLSCHAF BFW 16 A is an epitaxial NPN silicon planar RF transistor In TO 39 metal case 5 C 3 DIN 41873 intended for general applications up to the GHz range, e.g. for	OCR Scan	fi235bQS Q62702-F319 C--12 23SbQS Q0QM727 BFW16A TRANSISTOR b 772 p bfw 16 transistor BFW 72 TRANSISTOR BFW 16	PDF
Untitled Abstract: No abstract text available Text: ESC D • ûS35bOS Q0Q47SÔ 7 * S I E G ^ NPN Silicon RF Broadband Transistor BFW 30 Not for new design SIEMENS AK TIEN GE SE LL SC HA F BFW 30 is an epitaxial NPN silicon planar RF transistor in a TO 72 case 18 A 4 DIN 41876 , designed for universal application up to the GHz range, e. g. for vertical amplifiers	OCR Scan	S35bOS Q0Q47SÔ Q62702-F320	PDF
Transistor BFw 92 Abstract: TRANSISTOR BFW 11 BFW92 bfw glass bfw 10 transistor BFw 92 NPN planar RF transistor bfw 11 bfw 30 transistor BFW 42 transistor Text: BFW 92 "W Silizium-NPN-Planar-HF-Transistor Silicon NPN Planar RF Transistor Anwendungen: Hochfrequenzverstärker bis in den GHz-Bereich Applications: RF-amplifier up to G Hz range Besondere Merkmale: Features: • Hohe Leistungsverstärkung • High pow er gain	OCR Scan	596/0776A1 470pF 20x8x0 Transistor BFw 92 TRANSISTOR BFW 11 BFW92 bfw glass bfw 10 transistor BFw 92 NPN planar RF transistor bfw 11 bfw 30 transistor BFW 42 transistor	PDF
BFW92 Abstract: TRANSISTOR BFW 11 SQP5 2N6621 349 2110 Q62702-F321 Q68000-A4669 QQG4733 6621 transistor bfw 90 Text: BSC D • Û235b05 0004731 7 « S I E G NPN Silicon RF Broadband Transistors T c rc\ t -» - SIEMENS AKTIENÛESELLSCHAF T - H 't r BFW 92 2 N 6621 BFW 9 2 is an epitaxial NPN silicon planar RF transistor in a plastic package similar to TO 119 50 B 3 DIN 41 86 7 ; intended for use as RF amplifier up to the GHz range,	OCR Scan	6535bQ5 2N6621. Q62702-F321 Q68000-A4669 temperatu077 QQG4733 BFW92 BFW92 TRANSISTOR BFW 11 SQP5 2N6621 349 2110 Q68000-A4669 6621 transistor bfw 90	PDF
BFW16A Abstract: bfw16 transistor bfw16a BFW 16 Text: BFW 16 A NPN SILICON TRANSISTOR, EP ITAXIAL PLANAR , TRANSISTOR NPN SILIC IU M PLANAR EPITAXIAL Final stage of the wide band vertical amplifier in high speed osciloscope Etage de sortie du balayage vertical large bande pour oscilloscopes rapides v CEO 25 V	OCR Scan	UTILI18 BFW16A BFW16A bfw16 transistor bfw16a BFW 16	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors H bb53T31 0D32142 T34 M A P X _Product specification NPN 3 GHz w ideband transistor ^ BFW 92A N AllER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN transistor in a plastic SOT37 envelope. It is primarily intended for use in amplifiers in the 40 to 860 MHz	OCR Scan	bb53T31 0D32142 BFW92A/02 BFW92A BFW92	PDF
Transistor BFw 92 Abstract: TRANSISTOR BFW 11 BFW92 transistor bfw 88 BFw 94 Text: BFW 92 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 1 BFW92 Marking Plastic case XTO 50 1= Collector; 2= Base; 3= Emitter Absolute Maximum Ratings	Original	BFW92 D-74025 Transistor BFw 92 TRANSISTOR BFW 11 transistor bfw 88 BFw 94	PDF
din 3141 Abstract: BFW92A transistor bfw 88 bfw 92 bfw 96 Text: BFW 92 A TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Wide band RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 1 BFW92A Marking Plastic case XTO 50 1= Collector; 2= Base; 3= Emitter Absolute Maximum Ratings	Original	BFW92A D-74025 din 3141 transistor bfw 88 bfw 92 bfw 96	PDF
TRANSISTOR BFW 11 Abstract: din 867 BFw 92 BFW 100 transistor Q62702-F321 bfw92 Text: IM P IM -Siliziu m -P lan ar-H F -T ran sisto r B F W 92 BFW 92 ist ein epitaktischer NPN-Silizium-Planar-HF-Transistor im Kunststoffgehäuse 50 B 3 DIN 41 867 T-Bauform ähnlich T 0 -50 , für Verwendung als HF-Verstärker bis in den GHz-Bereich, z.B. für Breitbandantennenverstärker.	OCR Scan	T0-50) Q62702-F321 400K/W TRANSISTOR BFW 11 din 867 BFw 92 BFW 100 transistor Q62702-F321 bfw92	PDF
TRANSISTOR BFW 16 Abstract: BFW92 2N6621 Q62702-F321 Q68000-A4669 QQG4733 siemens 800 169 O TRANSISTOR BFW 11 BFw 92 transistor bfw 90 Text: BSC D • Û235b05 0004731 7 « S I E G i l ' t r BFW 92 2 N 6621 NPN Silicon RF Broadband Transistors 'l c r rw -r * SIEMENS AKTIENÛESELLSCHAF B F W 9 2 is an epitaxial N PN silicon planar RF transistor in a plastic package similar to TO 119 50 B 3 D IN 41867 ; intended for use as RF amplifier up to the G H z range,	OCR Scan	6535bQ5 2N6621. Q62702-F321 Q68000-A4669 QQG4733 BFW92 TRANSISTOR BFW 16 2N6621 siemens 800 169 O TRANSISTOR BFW 11 BFw 92 transistor bfw 90	PDF
BFW92 Abstract: No abstract text available Text: Temic BFW92 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications R F am plifier up to G H z range. Features • High pow er gain • Low noise figure B FW 92 M arking: BFW 92 Plastic case TO 50 1= C ollector; 2= Em itter; 3= Base Absolute Maximum Ratings	OCR Scan	BFW92 ar-97 BFW92	PDF

transistor BD 540 Abstract: Transistor BFT 99 Transistor BFR 39 BFW 10 fet Transistor BFR 80 Transistor BFT 10 transistor BFT 41 371b Transistor BFT 42 TRANSISTOR bd 108 Text: 6 0 9 y e a MICRO ELECTRONICS CORF D E \| b [ m 7 f i a DOGObS? D \| 02 82D 00657 D *7^ 12.5?“ N O. B C W 94 BCW 95 BCW 96 BCW 97 B C X 25 BCX26 B C X 40 B C X 45 BCX 46 ' ' M AXIM UM R A T IN G S V C E S A T Ul u. TYPE X P O L A R IT Y Medium Kower Am plifiers and Switches	OCR Scan	609yea BCW94 O-92F BCW96 BCW95 BCW97 BCW94 transistor BD 540 Transistor BFT 99 Transistor BFR 39 BFW 10 fet Transistor BFR 80 Transistor BFT 10 transistor BFT 41 371b Transistor BFT 42 TRANSISTOR bd 108	PDF
2N5109 motorola Abstract: MRF536 BFR90 application MRF931 MRF586 244A-01 MRF962 MRF961 mrf517 2N5943 Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec ifications, and noise figure limits. Q P L types with JAN, JT X and J T X V processing levels are available a s well a s Hi Rei pro	OCR Scan	17A-01 05A-01 MRF536* MRF2369 MRF571 44A-01, 2N5947 MRF511 2N6603 MRF962 2N5109 motorola MRF536 BFR90 application MRF931 MRF586 244A-01 MRF961 mrf517 2N5943	PDF
BLY 33 transistor Abstract: BLW11 BFW 100 transistor BFY 52 transistor bfw 11 BFy 90 transistor Transistor BFX 59 transistor BFW 10 BLY 97 transistor texas rf power transistor Text: BLW11 SILICON NPN VH F/UH F POWER TRANSISTOR Ideal for C A T V Applications Typical Gain Bandwidth Product —1.35 GHz 11 dB Gain @ 20 0 M H z. In Broadband Circuit Low Distortion Low Noise mechanical data absolute maximum ratings (Tease ” 2 5 °C ) . . .	OCR Scan	BLW11 O-117 T0-60CE S0-104 SO-104 BLY 33 transistor BLW11 BFW 100 transistor BFY 52 transistor bfw 11 BFy 90 transistor Transistor BFX 59 transistor BFW 10 BLY 97 transistor texas rf power transistor	PDF
BFW 100 transistor Abstract: bfw92 Text: BFW92 ViSHAY _ ▼ Vishay Telefunken Silicon NPN Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ M Applications RF a m plifier up to G H z range. Features • High pow er gain • Low noise figure	OCR Scan	BFW92 D-74025 20-Jan-99 BFW 100 transistor bfw92	PDF
2N918 Abstract: SD1076 PT8811 MRF245 RF Transistor S10-12 PT8828 PT8710 sd-1076 PT9780 transistor pt4544 Text: 130. 175 MHz class C for FM mobile applications p\ communications mobiles FM, classe C TYPE PACKAGE CONFIG. V cc V .280 4LSL (B) XO-72 SL TO-117 SL .280 4LSL (B) .280 4LSL (B) CE CE CE CE CE 7,5 7,5 7,5 7,5 7,5 2N 4427 SD 1484-10 SD 1127 2N 6080 SD 1574	OCR Scan	BAM20 22N6082 BM80-12 SD1416 MM1601 MRF631 SD1144 PT8549 SD1214 N5054 2N918 SD1076 PT8811 MRF245 RF Transistor S10-12 PT8828 PT8710 sd-1076 PT9780 transistor pt4544	PDF
BLW24 Abstract: BLY38 BLY88 bly91 BLY-38 BLX66 bly power transistor TRANSISTOR BFW 16 BLY36 Transistor BFw 92 Text: BLW24 SILICON NPN VHF POWER TRANSISTOR HIGH POWER OUTPUT STAGE FOR FM/AM APPLICATIONS • • • • 17 W@ 175 MHz 8 dB Gain Distributed Construction I nerdigital Construction mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 60 V	OCR Scan	BLW24 O-1175 O-117 T0-60CE S0-104 SO-104 BLW24 BLY38 BLY88 bly91 BLY-38 BLX66 bly power transistor TRANSISTOR BFW 16 BLY36 Transistor BFw 92	PDF
BLY93A Abstract: BLY78 BLY34 BLY97A BLY-38 BLW11 BLY91 BLW25 BLW19 bly 63 Text: BLW23 SILICON NPN VH F POWER TRANSISTOR • • • 5 W at 175 MHz, 28 V Minimum Gain 13 dB Designed to Withstand Infinite VSWR at Rated Output mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 55 V	OCR Scan	BLW23 8/32-UNC-2A-Thread O-117 O-117 T0-60CE S0-104 SO-104 BLY93A BLY78 BLY34 BLY97A BLY-38 BLW11 BLY91 BLW25 BLW19 bly 63	PDF
BLW16 Abstract: BLW25 S0104 BLY78 BLY85 Transistor BFX 59 BFW 100 transistor bly93a BLY-38 BLW11 Text: BLW16 SILICON NPN VHF POWER TRANSISTOR 271 HIGH GAIN VH F MEDIUM POWER TRANSISTOR • • • • 1.4 W at 175 MHz Greater than 10 dB Gain Distributed Construction Interdigital Geometry mechanical data absolute maximum ratings T^ase s 25 °C Collector-Base V o lt a g e .36 V	OCR Scan	BLW16 O-117 T0-60CE S0-104 SO-104 BLW16 BLW25 S0104 BLY78 BLY85 Transistor BFX 59 BFW 100 transistor bly93a BLY-38 BLW11	PDF
BLY93 Abstract: bly89 BLY78 bly91 BLX65 bly93a BFY 94 transistor bly 78 BLW11 BLY88 Text: BLW14 SILICON NPN VHF POWER TRANSISTOR 873 H IG H G A IN O U TP U T FOR 13 V FM A P P L IC A TIO N S • 7 W a t 470 M H z • Stripline Package • Distributed Construction mechanical data TO-129 absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e .36 V	OCR Scan	BLW14 O-129 O-117 T0-60CE S0-104 SO-104 BLY93 bly89 BLY78 bly91 BLX65 bly93a BFY 94 transistor bly 78 BLW11 BLY88	PDF
blw 30 or bfw 30 Abstract: TRANSISTOR BFW 11 BLY83 BLY78 bly91 BLY-38 BLW11 blw 93 BLY76 BLY53 Text: BLW 22 SILICON NPN VHF POWER TRANSISTOR 873 FOR HIGH LEV EL C ATV APPLICATIONS • • • Typical f T 1000 MHz Cross M odulation Typically — 80 dB Inter Modulation Typically — 52 dB mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e .40 V	OCR Scan	O-117 O-117 T0-60CE S0-104 SO-104 blw 30 or bfw 30 TRANSISTOR BFW 11 BLY83 BLY78 bly91 BLY-38 BLW11 blw 93 BLY76 BLY53	PDF

TRANSISTOR BFW 11 Search Results

TRANSISTOR BFW 11 Result Highlights (5)

TRANSISTOR BFW 11 Datasheets Context Search

BFW92

TRANSISTOR BFW 11

TRANSISTOR BFW 11

TRANSISTOR b 772 p

Untitled

Transistor BFw 92

BFW92

BFW16A

Untitled

Transistor BFw 92

din 3141

TRANSISTOR BFW 11

TRANSISTOR BFW 16

BFW92

transistor BD 540

2N5109 motorola

BLY 33 transistor

BFW 100 transistor

2N918

BLW24

BLY93A

BLW16

BLY93

blw 30 or bfw 30