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    TRANSISTOR BFR36 Search Results

    TRANSISTOR BFR36 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BFR36 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFR360

    Abstract: BFR360T GPS05996
    Text: BFR360T NPN Silicon RF Transistor 3 Target Data • • • • For Low Voltage / Low Current Applications For Low Noise Amplifiers For Oscillators up to 4GHz and Pout > 10dBm Low Noise Figure : 1.1dB at 2.0GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device,


    Original     		PDF BFR360T 10dBm VPS05996 P-SC-75 GPS05996 BFR360 BFR360T GPS05996

    Untitled

    Abstract: No abstract text available
    Text: BFR360F NPN Silicon RF Transistor Preliminary data  Low voltage/ low current operation 2 3  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 1  Low noise figure: 1.0 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360F Apr-14-2003 -j100

    transitor RF 98

    Abstract: BFR360F E6327 GMA marking
    Text: BFR360F NPN Silicon RF Transistor Preliminary data  Low voltage/ low current operation 2 3  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 1  Low noise figure: 1.0 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360F transitor RF 98 BFR360F E6327 GMA marking

    Untitled

    Abstract: No abstract text available
    Text: BFR360L3 NPN Silicon RF Transistor Preliminary data  Low voltage/ Low current operation 3  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm  Low noise figure: 1.0 dB at 1.8 GHz 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360L3 210mA EHA07536 Feb-25-2002

    BFR360F

    Abstract: 104GHz transitor RF 98
    Text: BFR360F NPN Silicon RF Transistor Preliminary data  Low voltage/ low current operation 2 3  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 1  Low noise figure: 1.0 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360F Jun-16-2003 -j100 BFR360F 104GHz transitor RF 98

    MARKING CODE SMD IC

    Abstract: MARKING SMD IC CODE SMD 6PIN IC MARKING CODE marking CE SMD MARKING CODE 102c marking code my SMD Transistor npn MARKING SMD NPN TRANSISTOR BR TRANSISTOR SMD MARKING CODE ag RF NPN POWER TRANSISTOR 3 GHZ smd TRANSISTOR code b2
    Text: BFS466L6 NPN Silicon RF TWIN Transistor* • Low voltage/ low current applications 4 • Ideal for VCO modules and low noise amplifiers • World's smallest SMD 6-pin leadless package 3 5 2 6 1 • Built in 2 transitors TR1: die as BFR460L3, TR2: die as BFR360L3


    Original     		PDF BFS466L6 BFR460L3, BFR360L3) MARKING CODE SMD IC MARKING SMD IC CODE SMD 6PIN IC MARKING CODE marking CE SMD MARKING CODE 102c marking code my SMD Transistor npn MARKING SMD NPN TRANSISTOR BR TRANSISTOR SMD MARKING CODE ag RF NPN POWER TRANSISTOR 3 GHZ smd TRANSISTOR code b2

    Untitled

    Abstract: No abstract text available
    Text: BFR360F NPN Silicon RF Transistor Preliminary data  Low voltage/ low current operation 2 3  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 1  Low noise figure: 1.0 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360F Jan-29-2002 -j100

    BFR360L3

    Abstract: No abstract text available
    Text: BFR360L3 NPN Silicon RF Transistor Preliminary data  Low voltage/ Low current operation 3  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm  Low noise figure: 1.0 dB at 1.8 GHz 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360L3 EHA07536 Jul-01-2003 BFR360L3

    marking code CB SMD tr2

    Abstract: TRANSISTOR SMD MARKING CODE ce marking code CB SMD ic MARKING CODE SMD IC BFR360L3 BFR460L3 BFS360L6 BFS466L6 SMD 6PIN IC MARKING CODE SMD MARKING CODE 102c
    Text: BFS466L6 NPN Silicon RF TWIN Transistor* • Low voltage/ low current applications 4 • Ideal for VCO modules and low noise amplifiers • World's smallest SMD 6-pin leadless package 3 5 2 6 1 • Built in 2 transitors TR1: die as BFR460L3, TR2: die as BFR360L3


    Original     		PDF BFS466L6 BFR460L3, BFR360L3) marking code CB SMD tr2 TRANSISTOR SMD MARKING CODE ce marking code CB SMD ic MARKING CODE SMD IC BFR360L3 BFR460L3 BFS360L6 BFS466L6 SMD 6PIN IC MARKING CODE SMD MARKING CODE 102c

    Untitled

    Abstract: No abstract text available
    Text: BFR360F NPN Silicon RF Transistor Preliminary data  Low voltage/ low current operation 2 3  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 1  Low noise figure: 1.0 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360F 21cal

    Untitled

    Abstract: No abstract text available
    Text: BFR360L3 Low Noise Silicon Bipolar RF Transistor • Low voltage/ Low current operation • For low noise amplifiers • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz • Pb-free RoHS compliant and halogen-free thin small


    Original     		PDF BFR360L3 AEC-Q101

    BFR360T

    Abstract: BCR108T E6327 SC75 TRANSISTOR MARKING NK infineon marking code L2 fbs MARKING TRANSISTOR transistor marking code 325
    Text: BFR360T NPN Silicon RF Transistor 3 Preliminary data  Low voltage/ low current operation  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 2  Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360T VPS05996 BFR360T BCR108T E6327 SC75 TRANSISTOR MARKING NK infineon marking code L2 fbs MARKING TRANSISTOR transistor marking code 325

    BFR360L3

    Abstract: No abstract text available
    Text: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation 3 • For low noise amplifiers • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz 1 2 *Short-term description ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360L3 Jul-07-2004 BFR360L3

    fbs MARKING TRANSISTOR

    Abstract: No abstract text available
    Text: BFR360T NPN Silicon RF Transistor 3 Preliminary data  Low voltage/ low current operation  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 2  Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360T VPS05996 EHA07524 Jan-28-2003 fbs MARKING TRANSISTOR

    BFR360T

    Abstract: SC75
    Text: BFR360T NPN Silicon RF Transistor 3 Preliminary data  Low voltage/ low current operation  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 2  Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360T VPS05996 EHA07524 Jun-16-2003 BFR360T SC75

    Untitled

    Abstract: No abstract text available
    Text: BFR360T NPN Silicon RF Transistor 3 Preliminary data  Low voltage/ low current operation  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 2  Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360T VPS05996 EHA07524 Jan-29-2002

    marking FB

    Abstract: No abstract text available
    Text: BFR360T NPN Silicon RF Transistor* • Low voltage/ low current operation • For low noise amplifiers 2 3 1 • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360T marking FB

    Untitled

    Abstract: No abstract text available
    Text: BFR360T NPN Silicon RF Transistor 3 Preliminary data  Low voltage/ low current operation  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 2  Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360T VPS05996 15cal

    BFR360L3

    Abstract: BFR193L3
    Text: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • For low noise amplifiers 3 • For Oscillators up to 3.5 GHz and Pout > 10 dBm 1 2 • Low noise figure: 1.0 dB at 1.8 GHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101


    Original     		PDF BFR360L3 BFR360L3 BFR193L3

    Untitled

    Abstract: No abstract text available
    Text: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation 3 • For low noise amplifiers • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz 1 2 *Short-term description ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360L3

    Untitled

    Abstract: No abstract text available
    Text: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation 3 • For low noise amplifiers • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz 1 2 *Short-term description ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360L3

    BFR360F

    Abstract: AN077
    Text: BFR360F NPN Silicon RF Transistor • Low noise amplifier for low current applications • Collector design supports 5V supply voltage 2 3 1 • For oscillators up to 3.5 GHz • Low noise figure 1.0 dB at 1.8 GHz • Pb-free RoHS compliant package • Qualified according AEC Q101


    Original     		PDF BFR360F BFR360F AN077

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF