TRANSISTOR BFR 90 Search Results

TRANSISTOR BFR 90 Result Highlights (6)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB

TRANSISTOR BFR 90 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BFR106 Abstract: Q62702-F1219 GMA marking Transistor BFR 80 BFr pnp transistor Text: BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 PNP ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	OT-23 Q62702-F1219 900MHz Dec-11-1996 BFR106 Q62702-F1219 GMA marking Transistor BFR 80 BFr pnp transistor
BFr pnp transistor Abstract: BFR106 Transistor BFR 80 BFR 30 transistor Text: BFR 106 NPN Silicon RF Transistor 3 For low noise, high-gain amplifiers For linear broadband amplifiers Special application: antenna amplifiers Complementary type: BFR 194 PNP 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	VPS05161 OT-23 Oct-26-1999 BFr pnp transistor BFR106 Transistor BFR 80 BFR 30 transistor
Untitled Abstract: No abstract text available Text: BFR 35AP NPN Silicon RF Transistor 3 For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR 35AP Marking	Original	PDF	VPS05161 OT-23 900MHz Nov-30-2000
VSO05561 Abstract: Transistor BFR 30 Text: BFR 93AW NPN Silicon RF Transistor 3 For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR 93AW	Original	PDF	VSO05561 OT-323 900MHz Oct-13-1999 VSO05561 Transistor BFR 30
sot-23 rks Abstract: marking code RKS transistors transistor bf 194 NF 841 pcb antenna 1356 Q62702-F1346 bf 194 pin configuration Text: BFR 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA • Complementary type: BFR 106 NPN ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	OT-23 Q62702-F1346 900MHz Dec-13-1996 sot-23 rks marking code RKS transistors transistor bf 194 NF 841 pcb antenna 1356 Q62702-F1346 bf 194 pin configuration
marking 93A Abstract: BFR93A transistor marking R2s Text: BFR 93A NPN Silicon RF Transistor 3 For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR 93A R2s Pin Configuration	Original	PDF	VPS05161 OT-23 900MHz Oct-13-1999 marking 93A BFR93A transistor marking R2s
Untitled Abstract: No abstract text available Text: BFR 35AP NPN Silicon RF Transistor 3 For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 0.5 mA to 20 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR 35AP	Original	PDF	VPS05161 OT-23 Oct-13-1999
Transistor BFR 90 application Abstract: BFR93A bfr 93 a Transistor BFR 93 BFR 93 BFR93AR Transistor BFR marking R2 BFR 30 transistor bfr93 Text: TELEFUNKEN Semiconductors BFR 93 A / BFR 93 A R Silicon NPN Planar RF Transistor Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure 1 2 1 3 3 2 94 9280 BFR93A Marking: R2 Plastic case SOT 23	Original	PDF	BFR93A BFR93AR D-74025 Transistor BFR 90 application bfr 93 a Transistor BFR 93 BFR 93 Transistor BFR marking R2 BFR 30 transistor bfr93
bf 194 pin configuration Abstract: Transistor BFR 35 BFr pnp transistor Text: BFR 194 PNP Silicon RF Transistor 3 For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 2 Complementary type: BFR 106 NPN 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	VPS05161 OT-23 900MHz Oct-25-1999 bf 194 pin configuration Transistor BFR 35 BFr pnp transistor
Transistor BFR 30 Abstract: silicon npn planar rf transistor sot 143 zo 103 ma BFR 67 BFR93 bfr 705 BFR 30 transistor Transistor BFR 14 Transistor BFR 35 ZO 103 Text: BFR 93 / BFR 93 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 1 2 1 3 3 94 9280 BFR93 Marking: R1	Original	PDF	BFR93 BFR93R D-74025 Transistor BFR 30 silicon npn planar rf transistor sot 143 zo 103 ma BFR 67 bfr 705 BFR 30 transistor Transistor BFR 14 Transistor BFR 35 ZO 103
BFR90 Abstract: No abstract text available Text: SIEMENS NPN Silicon RF Transistor BFR 90 • For broadband amplifiers up to 2 GHz at collector currents from 1 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR 90 BFR 90 Q62702-F560 Pin Configuration	OCR Scan	PDF	Q62702-F560 flB35b05 BFR90
Transistor BFR 80 Abstract: BFR 30 transistor Transistor BFR 30 gh 312 BFR 80 Transistor BFR 90 BFR35 Transistor BFR 35 Transistor BFR 90 application Q62702-F347-S1 Text: BFR 35, BFR 35 A NPN Transistor fo r low-noise RF amplifiers and high-speed switching applications P re lim in a ry d a ta BFR 35 and BFR 35 A are epitaxial NPN silicon planar UHF transistors in a plastic case 23 A 3 DIN 41 869 SOT-23 for use in film circuits up into the GHz range, e.g.	OCR Scan	PDF	OT-23) Q62702-F347 Q62702-F347-S1 110JB BFR35 temperatur70 -22e-0 Transistor BFR 80 BFR 30 transistor Transistor BFR 30 gh 312 BFR 80 Transistor BFR 90 Transistor BFR 35 Transistor BFR 90 application Q62702-F347-S1
BFR106 Abstract: 2I k Text: SIEMENS BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	PDF	OT-23 Q62702-F1219 BFR106 900MHz BFR106 2I k
Transistor BFr 99 Abstract: No abstract text available Text: SIEMENS BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	PDF	Q62702-F1219 OT-23 flE35b05 900MHz Transistor BFr 99

ABE 422 Abstract: Transistor BFR 37 ABE 027 bfr14 BFR 98 ABE 604 Transistor BFr 99 ABE 721 Text: asc » • S23SbOS QOOHbS? T H S I E G { NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIENGESELLSCHAF BFR 14 B - - BFR 14 B is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. Because of its low noise figure, high	OCR Scan	PDF	pac54 23Sb05 BFR14B ABE 422 Transistor BFR 37 ABE 027 bfr14 BFR 98 ABE 604 Transistor BFr 99 ABE 721
BFR194 Abstract: No abstract text available Text: SIEMENS BFR 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA • Complementary type: BFR 106 NPN ESP: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	PDF	Q62702-F1346 OT-23 15toimax BFR194 900MHz BFR194
Transistor BFR 135 Abstract: Transistor BFR Transistor BFR 35 transistor K 1412 Text: SIEMENS BFR 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • f f = 8GHz F = 1.3dB at 900MHz 1=B 11 m Q62702-F1510 o li RCs CO BFR 193W 10 ESP: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	PDF	900MHz OT-323 Q62702-F1510 Transistor BFR 135 Transistor BFR Transistor BFR 35 transistor K 1412
TS 11178 Abstract: No abstract text available Text: SIEMENS BFR 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA • Complementary type: BFR 106 NPN ESP: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	PDF	Q62702-F1346 OT-23 B535bQ5 BFR194 900MHz TS 11178
Untitled Abstract: No abstract text available Text: SIEMENS BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • /f = 8 GHz F = 1.2 dB at 900 MHz RHs Q62702-F1316 1= B li O BFR 183 CO ESP: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	PDF	Q62702-F1316 OT-23 BFR183 900MHz
transistor marking R2s Abstract: AMI siemens BFR93AW k150t Text: SIEMENS BFR 93AW NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA 1=B Q62702-F1489 h R2s m BFR 93AW ro ESP: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	PDF	Q62702-F1489 OT-323 900MHz transistor marking R2s AMI siemens BFR93AW k150t
Untitled Abstract: No abstract text available Text: SIEMENS BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F=1.45dB at 900MHz SOT-23 RFs Q62702-F1314 1= B 2=E o Package BFR 181 II CO ESP: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	PDF	900MHz Q62702-F1314 OT-23 BFR181
marking 93A Abstract: transistor marking code 1325 b 11061 Text: SIEMENS BFR 93A NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA • CECC.type available: CECC 50 002/256 BFR 93A R2s Q62702-F1086 1= B ro il m ESP: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	PDF	Q62702-F1086 OT-23 900MHz marking 93A transistor marking code 1325 b 11061
Q62702-F938 Abstract: IS21E K2112 Text: SIEMENS BFR 35AP NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA Q62702-F938 1=B O GEs LU II CM BFR 35AP CO II ESP: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	PDF	Q62702-F938 OT-23 IS21e K2112
Transistor BFR 90 Abstract: BFR92 BFR92A NPN planar RF transistor Transistor BFR 50 Text: BFR 92A~ GELB Marked with: PS BFR 92AR- GELB Marked With P2 m o a n y m w i electronic C’Wwc fechnokjpies Silicon NPN Planar RF Transistor Applications: RF-amplifier up to GHz rang specially for wide band antenna amplifier Features: • High power gain	OCR Scan	PDF	TELFS005 92AR-GELB D-7100 Transistor BFR 90 BFR92 BFR92A NPN planar RF transistor Transistor BFR 50

TRANSISTOR BFR 90 Search Results

TRANSISTOR BFR 90 Result Highlights (6)

TRANSISTOR BFR 90 Datasheets Context Search

BFR106

BFr pnp transistor

Untitled

VSO05561

sot-23 rks

marking 93A

Untitled

Transistor BFR 90 application

bf 194 pin configuration

Transistor BFR 30

BFR90

Transistor BFR 80

BFR106

Transistor BFr 99

ABE 422

BFR194

Transistor BFR 135

TS 11178

Untitled

transistor marking R2s

Untitled

marking 93A

Q62702-F938

Transistor BFR 90