Transistor BFR 35
Abstract: Transistor BFR 38 Transistor BFR Transistor BFR 97 K 2056 transistor Transistor BFR 39 transistor npn d 2058 transistor K 2056 Transistor BFR 98 Transistor BFR 91
Text: 2SC D • fl23SbOS Q0QMb74 T H S I E G NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers and High-Speed Switching Applications BFR 35 A BFR 35 AR 0 '7 Z3 I - / S 2 N 6619 SIEMENS AKTIENGESELLSCHAF ’4 BFR 35 A is an epitaxial NPN silicon planar RF transistor in TO 2 3 6 plastic package
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fl23SbOS
Q0QMb74
2N6619,
023SbOS
00G4b77
BFR35A
2N6619
Transistor BFR 35
Transistor BFR 38
Transistor BFR
Transistor BFR 97
K 2056 transistor
Transistor BFR 39
transistor npn d 2058
transistor K 2056
Transistor BFR 98
Transistor BFR 91
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Transistor BFR 97
Abstract: Transistor BFR 39 transistor npn d 2058 Transistor BFR 35 Transistor BFR 98 Transistor BFR 38 Transistor BFR 80 Transistor BFR 91 K 2056 transistor Transistor BFR 79
Text: 2SC D • fl23SbOS Q0QMb74 T H S I E G NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers and High-Speed Switching Applications BFR 35 A BFR 35 AR 0 '7 Z3 I - / S 2 N 6619 SIEMENS AKTIENGESELLSCHAF ’4 BFR 35 A is an epitaxial NPN silicon planar RF transistor in TO 2 3 6 plastic package
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fl23SbOS
Q0QMb74
2N6619,
023SbOS
00G4b77
BFR35A
2N6619
Transistor BFR 97
Transistor BFR 39
transistor npn d 2058
Transistor BFR 35
Transistor BFR 98
Transistor BFR 38
Transistor BFR 80
Transistor BFR 91
K 2056 transistor
Transistor BFR 79
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P3H7
Abstract: Transistor BFR 98 Transistor BFR 96 Transistor BFr 99 BFR14 BFR14B F-05 Q62702-F494 microwave transistor siemens cs10ma
Text: asc » • fl23Sb05 OOOHbS? T ■SIEfi/ T-if-tJ NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIENGESELLSCHAF BFR 14 B - - BFR 14 B is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. Because of its low noise figure, high
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fl235b05
desi548
U4661
BFR14B
/cS10mA
200MHz
P3H7
Transistor BFR 98
Transistor BFR 96
Transistor BFr 99
BFR14
BFR14B
F-05
Q62702-F494
microwave transistor siemens
cs10ma
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ABE 422
Abstract: Transistor BFR 37 ABE 027 bfr14 BFR 98 ABE 604 Transistor BFr 99 ABE 721
Text: asc » • S23SbOS QOOHbS? T H S I E G { NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIENGESELLSCHAF BFR 14 B - - BFR 14 B is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. Because of its low noise figure, high
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pac54
23Sb05
BFR14B
ABE 422
Transistor BFR 37
ABE 027
bfr14
BFR 98
ABE 604
Transistor BFr 99
ABE 721
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Untitled
Abstract: No abstract text available
Text: MBT2222ADW1T1G General Purpose Transistor NPN Silicon Features • Moisture Sensitivity Level: 1 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com 3 (2) (1) MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage
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MBT2222ADW1T1G
MBT2222ADW1T1/D
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Pin Configuration
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Q62702-F1062
OT-23
BFT92
H35bD5
900MHz
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siemens s450
Abstract: No abstract text available
Text: NPN Silicon RF Transistor BFR 93A • For low-distortion broadband amplifiers and oscillators up to 2 GHz at operating currents from 5 to 30 mA. E CECC-type available: CECC 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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OT-23
siemens s450
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bfr96s
Abstract: No abstract text available
Text: SIEMENS BFR 96S NPN Silicon RF Transistor • For low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 2 GHz at collector currents from 10 mA to 70 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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Q68000-A5689
bfr96s
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1N914
Abstract: MBT2222ADW1T1G
Text: MBT2222ADW1T1G General Purpose Transistor NPN Silicon Features • Moisture Sensitivity Level: 1 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com 3 (2) (1) MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage
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MBT2222ADW1T1G
MBT2222ADW1T1/D
1N914
MBT2222ADW1T1G
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFR 92W NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!
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Q62702-F1488
OT-323
053SbOS
900MHz
15nlA
23Sb05
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Transistor BFR 97
Abstract: Transistor BFR 37 Q62702-F1051 Transistor BFR 98
Text: NPN Silicon RF Transistor BFR 93P ● For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA. ● CECC-type available: CECC 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking
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Q62702-F1051
OT-23
Transistor BFR 97
Transistor BFR 37
Q62702-F1051
Transistor BFR 98
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BFR 965
Abstract: BFR 36.2 Transistor BFR sot 23 transistor 70.2 Q62702-F1315 sot-23 marking code 352 0482 transistor 0166 415 04 1 060 bfr 705
Text: NPN Silicon RF Transistor BFR 182 Preliminary Data ● For low-noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. ● fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!
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Q62702-F1315
OT-23
BFR 965
BFR 36.2
Transistor BFR
sot 23 transistor 70.2
Q62702-F1315
sot-23 marking code 352
0482 transistor
0166 415 04 1 060
bfr 705
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Transistor BFR
Abstract: Transistor BFR 39 Q62702-F1086 Transistor BFR 30 Transistor BFR 38 MARKING 93 BFR93A BFR93
Text: NPN Silicon RF Transistor BFR 93 A ● For low-distortion broadband amplifiers and oscillators up to 2 GHz at operating currents from 5 mA to 30 mA. ● CECC-type available: CECC 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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Q62702-F1086
OT-23
Transistor BFR
Transistor BFR 39
Q62702-F1086
Transistor BFR 30
Transistor BFR 38
MARKING 93
BFR93A
BFR93
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Transistor BFR 93
Abstract: Transistor BFR 30 BFR 30 transistor Transistor BFR 39 BFR93 Transistor BFR 135 bfr 49 transistor Transistor BFR Transistor BFR 80 Transistor BFR 35
Text: NPN Silicon RF Transistor BFR 93 A ● For low-distortion broadband amplifiers and oscillators up to 2 GHz at operating currents from 5 mA to 30 mA. ● CECC-type available: CECC 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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Q62702-F1086
OT-23
Transistor BFR 93
Transistor BFR 30
BFR 30 transistor
Transistor BFR 39
BFR93
Transistor BFR 135
bfr 49 transistor
Transistor BFR
Transistor BFR 80
Transistor BFR 35
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Transistor BFR
Abstract: Transistor BFR 191 Transistor BFR 39 BFR 67
Text: BFR 35AP NPN Silicon RF Transistor • For broadband am plifiers up to 2 GHz and fast non saturated switches at collector currents from 0.5 to 20 mA. C ESD: E lectrostatic discharge sensitive device, observe handling precautions! Type M arking Ordering code
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OT-23
Transistor BFR
Transistor BFR 191
Transistor BFR 39
BFR 67
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Transistor BFR 90 application
Abstract: BFR90A Transistor BFR 35 Transistor BFR 90 693 071 010 811
Text: BFR 90 A TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 1 BFR90A Marking Plastic case XTO 50
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BFR90A
D-74025
Transistor BFR 90 application
Transistor BFR 35
Transistor BFR 90
693 071 010 811
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BFR90
Abstract: BFR 90
Text: BFR 90 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 1 BFR90 Marking Plastic case XTO 50
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BFR90
D-74025
BFR 90
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Transistor BFR 96
Abstract: Bfr 910 BFR96T TRANSISTOR BFR 642 telefunken BFR 34 A
Text: BFR 96 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 1 BFR96T Marking Plastic case XTO 50
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BFR96T
D-74025
Transistor BFR 96
Bfr 910
TRANSISTOR BFR 642
telefunken BFR 34 A
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BFR 970
Abstract: BFR96TS Transistor BFR 96 Bfr 910 Transistor BFR 90 application Transistor BFR 559
Text: BFR 96 TS TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 1 BFR96TS Marking Plastic case XTO 50
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BFR96TS
D-74025
BFR 970
Transistor BFR 96
Bfr 910
Transistor BFR 90 application
Transistor BFR 559
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Untitled
Abstract: No abstract text available
Text: RF & Protection Devices Board Name BFP 540ESD Evalboard Products Description Order No. BFP 540ESD A low-cost, low-current broadband UHF low noise amplifier with the ESD-robust BFP 540ESD RF transistor. BFP540ESD board This board shows the ESD-robust BFR 460L3 board in ISM and
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540ESD
540ESD
BFP540ESD
460L3
BFR460L3
434MHz
BFP460
360L3
340L3
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Transistor BFR 191
Abstract: bfr 49 transistor transistor eb 2030
Text: BFR 92P NPN Silicon RF Transistor • For broadband am plifiers up to 2 GHz and fast non-saturated sw itches at co lle cto r currents from 0.5 to 20 mA. C E C EC C -type available: CECC 50002/254. ESD: E lectrostatic discharge sensitive device, observe handling precautions!
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OT-23
Transistor BFR 191
bfr 49 transistor
transistor eb 2030
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BFR16
Abstract: Transistor BFr 99
Text: SILICON PLANAR NPN BFR16 LO W -LE V EL, LOW-NOISE HIGH G AIN A M P LIFIE R The BFR 16 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal-case designed for use in high performance, low-level, low-noise amplifier applications. ABSOLUTE M A X IM U M RATINGS
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BFR16
BFR16
Transistor BFr 99
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lge 673
Abstract: TRANSISTOR cq 802
Text: BEE D • 053b3E0 □017Q3C] 0 H S I P NPN N Silicon RF Transistor SIEMENS/ SPCL-. SEMICONDS ^ ^ BFR 193 • For low-noise, high-gain amplifiers up to 2 GHz. • For linear broadband amplifiers. • fr = 8 GHz. F = 1.2 dB at 800 MHz. ESD : Electrostatic discharge sensitive device, observe handling precautions!
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053b3E0
017Q3C
62702-F1218
OT-23
01-1-1-7O
lge 673
TRANSISTOR cq 802
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Untitled
Abstract: No abstract text available
Text: 3SE D • flS3t.33Q 0 0 1 7 0 1 ^ S m S I P NPN Silicon RF Transistor T "2 l-f 7 _ SIE M E N S / SPCL-. SEMICONDS _ BFR • For low-distortion broadband amplifiers and oscillators up to 2 GHz at operating currents from 5 to 30 mA. S CECC-type available: CECC 50002/256.
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BFR93A
OT-23
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