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    TRANSISTOR BFR 135 Search Results

    TRANSISTOR BFR 135 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BFR 135 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Transistor BFR 96

    Abstract: Transistor BFR 30 bfr 547 Transistor BFR 191 silicon npn planar rf transistor sot 143 SOT-23R BFR 970 ZO 103 Telefunken Electronic BFR92
    Text: BFR 92 / BFR 92 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 1 2 1 3 3 94 9280 BFR92 Marking: P1


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    BFR92 BFR92R D-74025 Transistor BFR 96 Transistor BFR 30 bfr 547 Transistor BFR 191 silicon npn planar rf transistor sot 143 SOT-23R BFR 970 ZO 103 Telefunken Electronic PDF

    MMBT5401LT1G

    Abstract: 1N914 MMBT5401LT3G
    Text: MMBT5401LT1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −150 Vdc Collector −Base Voltage


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    MMBT5401LT1G MMBT5401LT1/D MMBT5401LT1G 1N914 MMBT5401LT3G PDF

    1N914

    Abstract: MMBT5401LT1G MMBT5401LT3G
    Text: MMBT5401LT1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −150 Vdc Collector −Base Voltage


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    MMBT5401LT1G MMBT5401LT1/D 1N914 MMBT5401LT1G MMBT5401LT3G PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBT5401WT1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage Rating VCEO −150 Vdc Collector −Base Voltage


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    MMBT5401WT1G MMBT5401W/D PDF

    MMBT5401LT1G

    Abstract: 1N914 MMBT5401LT3G
    Text: MMBT5401LT1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −150 Vdc Collector −Base Voltage


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    MMBT5401LT1G MMBT5401LT1/D MMBT5401LT1G 1N914 MMBT5401LT3G PDF

    BFR 965

    Abstract: BFR 36.2 Transistor BFR sot 23 transistor 70.2 Q62702-F1315 sot-23 marking code 352 0482 transistor 0166 415 04 1 060 bfr 705
    Text: NPN Silicon RF Transistor BFR 182 Preliminary Data ● For low-noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. ● fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!


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    Q62702-F1315 OT-23 BFR 965 BFR 36.2 Transistor BFR sot 23 transistor 70.2 Q62702-F1315 sot-23 marking code 352 0482 transistor 0166 415 04 1 060 bfr 705 PDF

    BFR91

    Abstract: Transistor BFR 90 application transistor BFR91
    Text: BFR 91 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 1 BFR91 Marking Plastic case XTO 50


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    BFR91 D-74025 Transistor BFR 90 application transistor BFR91 PDF

    BFR90

    Abstract: BFR 90
    Text: BFR 90 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 1 BFR90 Marking Plastic case XTO 50


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    BFR90 D-74025 BFR 90 PDF

    Transistor BFR 96

    Abstract: Bfr 910 BFR96T TRANSISTOR BFR 642 telefunken BFR 34 A
    Text: BFR 96 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 1 BFR96T Marking Plastic case XTO 50


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    BFR96T D-74025 Transistor BFR 96 Bfr 910 TRANSISTOR BFR 642 telefunken BFR 34 A PDF

    BFR 970

    Abstract: BFR96TS Transistor BFR 96 Bfr 910 Transistor BFR 90 application Transistor BFR 559
    Text: BFR 96 TS TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 1 BFR96TS Marking Plastic case XTO 50


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    BFR96TS D-74025 BFR 970 Transistor BFR 96 Bfr 910 Transistor BFR 90 application Transistor BFR 559 PDF

    MMBT5401L

    Abstract: No abstract text available
    Text: MMBT5401L, SMMBT5401L, NSVMMBT5401L High Voltage Transistor PNP Silicon http://onsemi.com Features • S and NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


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    MMBT5401L, SMMBT5401L, NSVMMBT5401L MMBT5401LT1/D MMBT5401L PDF

    transistors BC 543

    Abstract: 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5
    Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


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    OT-23 OT-363 OT-143 transistors BC 543 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5 PDF

    S4 78a DIODE schottky

    Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
    Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


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    25-RF-BIPOLAR-Transistors. 45-RF-BIPOLAR-Transistors. OT-23 OT-143 S4 78a DIODE schottky diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92 PDF

    2907A PNP bipolar transistors

    Abstract: diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT
    Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


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    OT-23 OT-143 2907A PNP bipolar transistors diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 180W NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA • = 7GHz F = 2.1 dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan
    900MHz OT-323 Q62702-F1490 PDF

    bfr96s

    Abstract: No abstract text available
    Text: SIEMENS BFR 96S NPN Silicon RF Transistor • For low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 2 GHz at collector currents from 10 mA to 70 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions!


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    Q68000-A5689 bfr96s PDF

    Transistor BFR

    Abstract: Transistor BFR 191 Transistor BFR 39 BFR 67
    Text: BFR 35AP NPN Silicon RF Transistor • For broadband am plifiers up to 2 GHz and fast non­ saturated switches at collector currents from 0.5 to 20 mA. C ESD: E lectrostatic discharge sensitive device, observe handling precautions! Type M arking Ordering code


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    OT-23 Transistor BFR Transistor BFR 191 Transistor BFR 39 BFR 67 PDF

    Transistor BFR 191

    Abstract: bfr 49 transistor transistor eb 2030
    Text: BFR 92P NPN Silicon RF Transistor • For broadband am plifiers up to 2 GHz and fast non-saturated sw itches at co lle cto r currents from 0.5 to 20 mA. C E C EC C -type available: CECC 50002/254. ESD: E lectrostatic discharge sensitive device, observe handling precautions!


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    OT-23 Transistor BFR 191 bfr 49 transistor transistor eb 2030 PDF

    lge 673

    Abstract: TRANSISTOR cq 802
    Text: BEE D • 053b3E0 017Q3C] 0 H S I P NPN N Silicon RF Transistor SIEMENS/ SPCL-. SEMICONDS ^ ^ BFR 193 • For low-noise, high-gain amplifiers up to 2 GHz. • For linear broadband amplifiers. • fr = 8 GHz. F = 1.2 dB at 800 MHz. ESD : Electrostatic discharge sensitive device, observe handling precautions!


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    053b3E0 017Q3C 62702-F1218 OT-23 01-1-1-7O lge 673 TRANSISTOR cq 802 PDF

    transistor BD 540

    Abstract: Transistor BFT 99 Transistor BFR 39 BFW 10 fet Transistor BFR 80 Transistor BFT 10 transistor BFT 41 371b Transistor BFT 42 TRANSISTOR bd 108
    Text: 6 0 9 y e a MICRO ELECTRONICS CORF D E | b [ m 7 f i a DOGObS? D | 02 82D 00657 D *7^ 12.5?“ N O. B C W 94 BCW 95 BCW 96 BCW 97 B C X 25 BCX26 B C X 40 B C X 45 BCX 46 ' ' M AXIM UM R A T IN G S V C E S A T Ul u. TYPE X P O L A R IT Y Medium Kower Am plifiers and Switches


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    609yea BCW94 O-92F BCW96 BCW95 BCW97 BCW94 transistor BD 540 Transistor BFT 99 Transistor BFR 39 BFW 10 fet Transistor BFR 80 Transistor BFT 10 transistor BFT 41 371b Transistor BFT 42 TRANSISTOR bd 108 PDF

    Untitled

    Abstract: No abstract text available
    Text: 32E D m Ô23b320 OGlb^flS S WÊ SIP NPN Silicon RF Transistor SIEMENS/ SP C Li SEMICONDS BFR35AP _ • For broadband amplifiers up to 2 GHz and fast non­ saturated switches at collector currents from 0.5 to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions!


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    23b320 BFR35AP 62702-F OT-23 T-31-17 PDF

    BFR92P

    Abstract: No abstract text available
    Text: 3 S E D • ö5 3b3 EG 0G17GQ2 T W ËSI P NPN Silicon RF Transistor SIEMENS/ SPCLi SEMICONDS BFR92P _ 7_ • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 to 20 mA. C £ CECC-type available: CECC 50002/254.


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    0G17GQ2 BFR92P OT-23 BFR92P PDF

    BFT65

    Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
    Text: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions


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    PDF

    TRANSISTOR 131-6 BJ 946

    Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
    Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise


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    B3-B3715 B3715-X-X-7600 TRANSISTOR 131-6 BJ 946 transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16 PDF