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    TRANSISTOR BFP420 Search Results

    TRANSISTOR BFP420 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BFP420 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BFP640F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 1 for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		PDF BFP640F BFP640may

    bfp640f

    Abstract: BFP420F
    Text: BFP640F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 1 for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		PDF BFP640F bfp640f BFP420F

    bfp640f

    Abstract: bfp640 R4S BFP640F BFP420F Infineon Technologies transistor 4 ghz
    Text: BFP640F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 1 for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		PDF BFP640F bfp640f bfp640 R4S BFP640F BFP420F Infineon Technologies transistor 4 ghz

    transistor BC 245

    Abstract: 420 transistor Infineon Technologies transistor 4 ghz infineon rf smd package amplifier TRANSISTOR 14 GHZ RF TRANSISTOR SOT23 5 BFP420 smd transistor infineon RF Semiconductors TRANSISTOR BC 136
    Text: Application Note No. 001 Discrete & RF Semiconductors SIEGET 25 Low Noise Amplifier with BFP 420 Transistor at 2.4 GHz The SIEMENS Grounded Emitter Transistor Line is a completely new generation of silicon bipolar junction RF-transistors. This application note describes a low-noise amplifier with the


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: BFP640F XYs NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		PDF BFP640F

    Infineon Technologies transistor 4 ghz

    Abstract: BFP720F BFP420F BFP720
    Text: BFP720F NPN Silicon Germanium RF Transistor Target data sheet • High gain ultra low noise RF transistor 3 for low current operation 2 4 1 • Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more • Optimum gain and noise figure


    Original     		PDF BFP720F Infineon Technologies transistor 4 ghz BFP720F BFP420F BFP720

    Untitled

    Abstract: No abstract text available
    Text: BFP740F XYs NPN Silicon Germanium RF Transistor* • High gain ultra low noise RF transistor 3 • Provides outstanding performance for a wide range 2 4 of wireless applications up to 10 GHz 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz


    Original     		PDF BFP740F

    Untitled

    Abstract: No abstract text available
    Text: BFP740F XYs NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor 3 • Provides outstanding performance for a wide range 2 4 of wireless applications up to 10 GHz 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz


    Original     		PDF BFP740F

    Untitled

    Abstract: No abstract text available
    Text: BFP620F XYs NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Small package 1.4 x 0.8 x 0.59 mm 2 4 • Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 Outstanding noise figure F = 1.3 dB at 6 GHz • Maximum stable gain TSFP-4


    Original     		PDF BFP620F

    Untitled

    Abstract: No abstract text available
    Text: BFP740F NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor 3 • Provides outstanding performance for 2 4 1 a wide range of wireless applications up to 10 GHz and more • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz


    Original     		PDF BFP740F

    germanium transistor ac 128

    Abstract: BFP420F BFP740F
    Text: BFP740F NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor 3 • Provides outstanding performance for 2 4 1 a wide range of wireless applications up to 10 GHz and more • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz


    Original     		PDF BFP740F germanium transistor ac 128 BFP420F BFP740F

    RF NPN POWER TRANSISTOR C 10-12 GHZ

    Abstract: BFP740 BFP420F BFP740F LBC* MARKING 160 germanium transistor
    Text: BFP740F NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor 3 • Provides outstanding performance for 2 4 1 a wide range of wireless applications up to 10 GHz and more • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz


    Original     		PDF BFP740F RF NPN POWER TRANSISTOR C 10-12 GHZ BFP740 BFP420F BFP740F LBC* MARKING 160 germanium transistor

    BFP620F

    Abstract: BFP420F
    Text: BFP620F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Small package 1.4 x 0.8 x 0.59 mm 2 4 1 • Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz • Maximum stable gain Gms = 21 dB at 1.8 GHz


    Original     		PDF BFP620F BFP620F BFP420F

    Untitled

    Abstract: No abstract text available
    Text: BFP620F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Small package 1.4 x 0.8 x 0.59 mm 2 4 1 • Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz • Maximum stable gain Gms = 21 dB at 1.8 GHz


    Original     		PDF BFP620F

    Untitled

    Abstract: No abstract text available
    Text: BFP740F XYs NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor 3 • Provides outstanding performance for 2 4 a wide range of wireless applications 1 up to 10 GHz and more TSFP-4 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz


    Original     		PDF BFP740F

    Untitled

    Abstract: No abstract text available
    Text: BFP420F Low Noise Silicon Bipolar RF Transistor Data Sheet Revision 1.1, 2012-11-07 RF & Protection Devices Edition 2012-11-07 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF BFP420F BFP420F:

    Untitled

    Abstract: No abstract text available
    Text: BFP420F Low Noise Silicon Bipolar RF Transistor Data Sheet Revision 1.0, 2012-01-30 RF & Protection Devices Edition 2012-01-30 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF BFP420F BFP420F:

    Untitled

    Abstract: No abstract text available
    Text: BFP420F Low Noise Silicon Bipolar RF Transistor Data Sheet Revision 1.0, 2012-01-30 RF & Protection Devices Edition 2012-01-30 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF BFP420F BFP420F:

    diode t25 4 G9

    Abstract: diode t25 4 g8 diode t25 4 c5 diode t25 4 g0 TRANSISTOR G13 diode t25 4 c4 BFP420 diode t25 4 c6 filter saw Siemens matsua siemens matsushita saw 45
    Text: Siemens Matsushita Components Application Note Using the B4204 PCN 2in1 Filter with a LNA based on the BFP420 RF Transistor Horst Germann S+M OFW E MF October 30, 1998 Munich, Germany Reg.-No.: MFAPP03A Siemens Matsushita Components SAW Components Application: Using B4204 with a LNA based on BFP420


    Original     		PDF B4204 BFP420 MFAPP03A BFP420 L585C) diode t25 4 G9 diode t25 4 g8 diode t25 4 c5 diode t25 4 g0 TRANSISTOR G13 diode t25 4 c4 diode t25 4 c6 filter saw Siemens matsua siemens matsushita saw 45

    AMS 3630

    Abstract: a06 transistor Q62702-F1591 ff 0401 transistor A06 marking A06 BFP420 A06 Code "A06" RF Semiconductor BFP420 application notes BFP420
    Text: SIEGET 25 BFP420 NPN Silicon RF Transistor l For High Gain Low Noise Amplifiers l For Oscillators up to 10 GHz l Noise Figure F = 1.05 dB at 1.8 GHz Outstanding G = 20 dB at 1.8 GHz l Transition Frequency f = 25 GHz l Gold metalization for high reliability


    Original     		PDF BFP420 25-Line OT343 Q62702-F1591 AMS 3630 a06 transistor Q62702-F1591 ff 0401 transistor A06 marking A06 BFP420 A06 Code "A06" RF Semiconductor BFP420 application notes BFP420

    BFP420 application notes

    Abstract: INFINEON BFP420 (Ams) INFINEON BFP420 Ams BFP420 BGA420
    Text: BFP420 NPN Silicon RF Transistor • For high gain low noise amplifiers 3 • For oscillators up to 10 GHz 2 4 • Noise figure F = 1.1 dB at 1.8 GHz 1 outstanding Gms = 21 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability


    Original     		PDF BFP420 OT343 BFP420 application notes INFINEON BFP420 (Ams) INFINEON BFP420 Ams BFP420 BGA420

    INFINEON BFP420 Ams

    Abstract: BFP420 BGA420
    Text: BFP420 NPN Silicon RF Transistor • For high gain low noise amplifiers 3 • For oscillators up to 10 GHz 2 4 • Noise figure F = 1.1 dB at 1.8 GHz 1 outstanding Gms = 21 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability


    Original     		PDF BFP420 OT343 INFINEON BFP420 Ams BFP420 BGA420

    INFINEON BFP420 Ams

    Abstract: BFP420
    Text: BFP420 NPN Silicon RF Transistor • For high gain low noise amplifiers 3 • For oscillators up to 10 GHz 2 4 • Noise figure F = 1.1 dB at 1.8 GHz 1 outstanding Gms = 21 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability


    Original     		PDF BFP420 OT343 726-BFP420E6740 E6740 INFINEON BFP420 Ams BFP420

    Untitled

    Abstract: No abstract text available
    Text: BFP420 NPN Silicon RF Transistor • For high gain low noise amplifiers 3 • For oscillators up to 10 GHz 2 4 • Noise figure F = 1.1 dB at 1.8 GHz 1 outstanding Gms = 21 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability


    Original     		PDF BFP420 OT343