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    TRANSISTOR BF 520 Search Results

    TRANSISTOR BF 520 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BF 520 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor M-226

    Abstract: CPH6701
    Text: CPH6701 SPICE PARAMETER PNP SMALL-SIGNAL TRANSISTOR model : Gummel-Poon Value Parameter 520 f IS 420.0 BF 0.99 NF 7.5 VAF 1 IKF 13.4 f ISE 1.9 NE 100.40 BR 1.00 NR 5 VAR 273.9m IKR Unit A V A A V A Parameter ISC NC RB IRB RBM RE RC XTB XTI EG Value 651 f 1.10


    Original     		PDF CPH6701 27deg transistor M-226 CPH6701

    CPH3123

    Abstract: No abstract text available
    Text: CPH3123 SPICE PARAMETER PNP Bipolar Transistor model : Gummel-Poon Parameter Value IS 520.0f NF 1 IKF 1 NE 2 NR 1 IKR 850.0m NC 2 IRB 40.00m RE 42.00m XTB 1.6 XTI 3 VJE 750.0m TF 350p VTF 1.000K PTF VJC 540.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A


    Original     		PDF CPH3123 CPH3123

    Transistor BC 1078

    Abstract: uln2004 application note UDN2983A equivalent UDN2580A equivalent replacement M5266P TD62083 uln2803 REPLACEMENT FOR relay driver ic ULN2803 m54586p ULN2032A PA2003C
    Text: Interface Driver ICs PRODUCT GUIDE In recent years, dedicated custom ICs ASICs meeting specifications of various users have been widely used mainly for controlling electronic equipment. On the other hand, general purpose ICs, such as operational amplifiers, regulators,


    Original     		PDF

    Infineon technology roadmap for mosfet

    Abstract: germanium transistor pnp smd smd mosfet sot-363 microwave transistor siemens bfp 420 varactor flip chip radar 77 ghz sige Infineon automotive semiconductor technology roadmap transistor SMD DK qs siemens spc 2 SiGe PNP transistor
    Text: Small CHIPS for big visions Silicon Discretes www.infineon.com Never stop thinking. INTRODUCTION O n e o f t h e w o r l d ' s major manufacturers of radio frequency RF components, Infineon Technologies is committed to innovative technologies and products, flexible service and the very best supply conditions for customers and partners.


    Original     		PDF B191-H7496-G1-X-7600 Infineon technology roadmap for mosfet germanium transistor pnp smd smd mosfet sot-363 microwave transistor siemens bfp 420 varactor flip chip radar 77 ghz sige Infineon automotive semiconductor technology roadmap transistor SMD DK qs siemens spc 2 SiGe PNP transistor

    transistors BC 543

    Abstract: 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5
    Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


    Original     		PDF OT-23 OT-363 OT-143 transistors BC 543 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5

    transistor b 1238

    Abstract: Q62702-F1794 transistor bf 520 transistor bfp 520
    Text: SIEGET 45 BFP 520 NPN Silicon RF Transistor Preliminary data 3 • For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz 2 • Transition frequency fT = 45 GHz 1


    Original     		PDF VPS05605 Q62702-F1794 OT-343 50Ohm 45GHz -j100 Sep-09-1998 transistor b 1238 Q62702-F1794 transistor bf 520 transistor bfp 520

    ev 2816

    Abstract: ic rom 2816 VPS05605 transistor bfp 520 gummel
    Text: SIEGET 45 BFP 520 NPN Silicon RF Transistor 3  For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB  For oscillators up to 15 GHz 2  Transition frequency fT = 45 GHz 1  Gold metallization for high reliability


    Original     		PDF VPS05605 OT-343 50Ohm 45GHz -j100 Jun-09-2000 ev 2816 ic rom 2816 VPS05605 transistor bfp 520 gummel

    VPS05605

    Abstract: No abstract text available
    Text: SIEGET 45 BFP 520 NPN Silicon RF Transistor Preliminary data 3  For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB  For oscillators up to 15 GHz 2  Transition frequency fT = 45 GHz 1  Gold metallization for high reliability


    Original     		PDF VPS05605 OT-343 50Ohm 45GHz -j100 Jan-29-1999 VPS05605

    laser diode spice modeling

    Abstract: laser diode spice model simulation spice ATF 10136 atf-10136 spice MSA-09 ATF13136 mmic a20 MSA-0311 AT-41500 S parameters for ATF 10136
    Text: Application Design Tools Services and Applications Literature Hewlett-Packard customers are supported by an Applications Engineering Department. The applications engineering staff investigates circuit applications, design techniques, and device performance. The results of these


    Original     		PDF 42E-13 04E-1 53E-13 5E-12 87E-2 1E-14) INA-12 900MHz 900E6) laser diode spice modeling laser diode spice model simulation spice ATF 10136 atf-10136 spice MSA-09 ATF13136 mmic a20 MSA-0311 AT-41500 S parameters for ATF 10136

    2SC3953-SPICE

    Abstract: 2sa1538 spice 2sc3953 spice 2SC5610 MJE-360 2SC4548 2sk4096 2SB631K 2SC5706 equivalent 2SC2911-SPICE
    Text: 12A02CH-SPICE -* SANYO 12A02CH SPICE PARAMETER * .LIB 12A02CH * DATE : 2006/12/26 * Temp = 27 deg .MODEL 12A02CH PNP +NF = 1.0 IS VAF = 110.0f


    Original     		PDF 12A02CH-SPICE 12A02CH 12A02CH 2SB1205 2SB1205 2SC3953-SPICE 2sa1538 spice 2sc3953 spice 2SC5610 MJE-360 2SC4548 2sk4096 2SB631K 2SC5706 equivalent 2SC2911-SPICE

    2907A PNP bipolar transistors

    Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
    Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


    Original     		PDF O-92d 2907A PNP bipolar transistors BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846

    LCS702

    Abstract: LCS701 LCS708 LCS705 32 inch LCD LG TV SCHEMATIC lcs700 S2C71 LCS700-708 lg lcd tv POWER SUPPLY SCHEMATIC PI-6764-051412
    Text: LCS700-708 HiperLCS Family Integrated LLC Controller, High-Voltage Power MOSFETs and Drivers Product Highlights Features • LLC half-bridge power stage incorporating controller, high and low-side gate drives, and high-voltage power MOSFETs • Eliminates up to 30 external components


    Original     		PDF LCS700-708 LCS702 LCS701 LCS708 LCS705 32 inch LCD LG TV SCHEMATIC lcs700 S2C71 lg lcd tv POWER SUPPLY SCHEMATIC PI-6764-051412

    Untitled

    Abstract: No abstract text available
    Text: LCS700-708 HiperLCS Family Integrated LLC Controller, High-Voltage Power MOSFETs and Drivers Product Highlights Features • LLC half-bridge power stage incorporating controller, high and low-side gate drives, and high-voltage power MOSFETs • Eliminates up to 30 external components


    Original     		PDF LCS700-708 ov5-471-1021

    S4 78a DIODE schottky

    Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
    Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


    Original     		PDF 25-RF-BIPOLAR-Transistors. 45-RF-BIPOLAR-Transistors. OT-23 OT-143 S4 78a DIODE schottky diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92

    BF324

    Abstract: oms 450 Q62702-F311 S420
    Text: 25C » • ô53SbQS GGQ4H73 0 WÊZIZG [; PNP Silicon RF Transistor SIEMENS AKTIENÛESELLSCHAF '3 T -ïl-tl BF 324 D.- fo r large-signal V H F stag es BF 3 2 4 is an epitaxial PNP silicon planar transistor in TO 9 2 plastic package TO A 3


    OCR Scan     		PDF Q62702-F311 140mS BF324 oms 450 Q62702-F311 S420

    BF167

    Abstract: transistor BF 37
    Text: TELEFUNKEN ELECTRONIC aie D fi^SDO^b OOOSlbO B F 167 TTiOJlIFiyiKlCSiKI electronic Creative Techrxriogtes Silicon NPN Planar RF Transistor Applications! Controlled video IF amplifier stages in common emitter configuration Features: • Small feedback capacitance


    OCR Scan     		PDF 569-GS BF167 transistor BF 37

    3866S

    Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


    OCR Scan     		PDF

    catalogue des transistors bipolaires de puissance

    Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


    OCR Scan     		PDF

    TRANSISTOR 131-6 BJ 946

    Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
    Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise


    OCR Scan     		PDF B3-B3715 B3715-X-X-7600 TRANSISTOR 131-6 BJ 946 transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16

    APC UPS CIRCUIT DIAGRAM rs 1500

    Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
    Text: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO


    OCR Scan     		PDF AF106 AF106 APC UPS CIRCUIT DIAGRAM rs 1500 APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIEGET 45 BFP 520 NPN Silicon RF Transistor Preliminary data • For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency f j = 45 GHz


    OCR Scan     		PDF Q62702-F1794 OT-343

    transistor t06

    Abstract: T06 transistor transistor t06 19 2SC 930 AF t06 93 UPC1678B LT 5219 UPC8103T UPC8108T
    Text: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS Part Number Typ. Fr*q. Range O 3 dB down MHz ELECTRICAL CHARACTERISTICS1 <f*500 MHz, «XC«frt a t noted T a * 25°C.) NF (dB) Icc Vcc (V) (mA) MIN TYP MAX TYP RLin RLout PSAT (dB) (dBm) (dB) ISOL (dB) MAX


    OCR Scan     		PDF

    tc9137p

    Abstract: TC9137BP TD6301AP E310 fet tc9137 td6104 td6301 td6301ap toshiba E310D TC9137BF
    Text: 't O S H ^ T e LECTRONIC „ _ 02 D e | ciQc17E47~0017ciDci o | -. — • ; T-5o"n C-MOS LSI FOR STATIC TYPE DIGITAL TUNING SYSTEM. Unit in mm TC9137BP/BF are LSI for PLL synthesizer type digital tuning system with PLL circuit and control « circuit centralized'into one chip.


    OCR Scan     		PDF 17E47 0017c TC9137BP/BF I7547 TC9137BP/BF TCH7247 D017C tc9137p TC9137BP TD6301AP E310 fet tc9137 td6104 td6301 td6301ap toshiba E310D TC9137BF

    diode S6 78A

    Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
    Text: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14


    OCR Scan     		PDF O-92tl O-92d diode S6 78A TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor