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    TRANSISTOR BF 193 Search Results

    TRANSISTOR BF 193 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BF 193 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    m33 tf 130

    Abstract: BF113 is373 GRS-003 GRS003 Mje 1533 1803e 203FF 1115 R1B H645
    Text: Order this document by AN1400/D AN1400 Application Note MC10/100H640 Clock Driver Family I/O SPICE Modelling Kit Prepared by Todd Pearson Debbie Beckwith ECL Applications Engineering This application note provides the SPICE information necessary to accurately model system interconnect


    Original     		PDF AN1400/D AN1400 MC10/100H640 MC10H600 MC10H640, MC10/100H64 m33 tf 130 BF113 is373 GRS-003 GRS003 Mje 1533 1803e 203FF 1115 R1B H645

    Transistor BC 1078

    Abstract: uln2004 application note UDN2983A equivalent UDN2580A equivalent replacement M5266P TD62083 uln2803 REPLACEMENT FOR relay driver ic ULN2803 m54586p ULN2032A PA2003C
    Text: Interface Driver ICs PRODUCT GUIDE In recent years, dedicated custom ICs ASICs meeting specifications of various users have been widely used mainly for controlling electronic equipment. On the other hand, general purpose ICs, such as operational amplifiers, regulators,


    Original     		PDF

    transistors BC 543

    Abstract: 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5
    Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


    Original     		PDF OT-23 OT-363 OT-143 transistors BC 543 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5

    S100 NPN Transistor

    Abstract: BF603 S100 transistor BF503 Q62702-F574 S100 S400 transistor 503
    Text: L¿ I 2SC D • flE35b05 GGG4507 S NPN Silicon RF Transistor I SI E 6 BF 503 SIEMENS AKTIENGESELLSCHAF BF 5 0 3 is an NPN silicon planar RF transistor in TO 92 plastic package 10 A 3 DIN 41868 . The transistor is particularly intended for use in VHF amplifiers, VH F mixers, and VHF


    OCR Scan     		PDF fl23SbOS 00Q4507 Q62702-F574 S100 NPN Transistor BF603 S100 transistor BF503 Q62702-F574 S100 S400 transistor 503

    S100 NPN Transistor

    Abstract: No abstract text available
    Text: u r 2SC D • fl23 Sb05 GGQ4507 S NPN Silicon RF Transistor isiEG : -~r-S i- M BF 503 -SIEMENS AKTIENGESELLSCHAF - ;— BF 5 0 3 is an NPN silicon planar RF transistor in TO 9 2 plastic package 1 0 A 3 DIN 4 1 8 6 8 .


    OCR Scan     		PDF GGQ4507 E--08 S100 NPN Transistor

    bf507

    Abstract: GC 607 TRANSISTOR Q62702-F571
    Text: bsc D Hi a a a s b o s oqo4S13 a ISIE6 T - 3 I- V BF 507 NPN Silicon RF Transistor SIEMENS AKTIENGESELLSCHAF °4513 O' BF 507 is an NPN silicon planar RF transistor in TO 92 plastic package {10 A 3 DIN 41868 . The transistor is particularly intended for use in VHF amplifiers, VHF mixers and VHF/UHF


    OCR Scan     		PDF oqo4S13 T-31-1/ Q62702-F571 bf507 GC 607 TRANSISTOR Q62702-F571

    transistor d 1933

    Abstract: transistor BF 52 transistor bf 505 transistor 23 505 transistor BF 500 transistor Q62702-F573 MSIE npn 505
    Text: i«ü 1 ESC D • fl23Sb05 OGQHSQI b « S I E G ' -T -3 Ì NPN Silicon RF Transistor SIEMENS AKTIENCESELLSCHAF : 04509 BF 505 0' BF 505 is an NPN silicon planar RF transistor in TO 92 plastic package 10 A 3 DIN 41868 . The transistor is particularly intended for use in VHF amplifiers in common emitter configuratin, VHF mixers and VHF/UHF oscillators.


    OCR Scan     		PDF A235bQS Q62702-F573 transistor d 1933 transistor BF 52 transistor bf 505 transistor 23 505 transistor BF 500 transistor Q62702-F573 MSIE npn 505

    bf 507 transistor

    Abstract: No abstract text available
    Text: bsc d Hi aaastos oqdhsi3 a h is ie g T - 3 I- Z / NPN Silicon RF Transistor SIEMENS AKT I EN GE SE LLS CH A F BF 507 o- °4513 BF 507 is an NPN silicon planar RF transistor in TO 92 plastic package 10 A 3 DIN 41868 . The transistor is particularly intended for use in VHF amplifiers, VHF mixers and VHF/UHF


    OCR Scan     		PDF Q62702-F571 bf 507 transistor

    transistor d 1933

    Abstract: No abstract text available
    Text: 2SC D • ñE3SbQS Q0045CH b H S I E NPN Silicon RF Transistor G| SIEMENS AKTIENGESELLSCHAF : 0^509 -2 A BF 505 0 - BF 5 0 5 is an NPN silicon planar RF transistor in TO 9 2 plastic package 10 A 3 D IN 41868 . The transistor is particularly intended for use in V H F amplifiers in common emitter configuratin, VH F mixers and VHF/UHF oscillators.


    OCR Scan     		PDF Q0045CH transistor d 1933

    zq 405-MF

    Abstract: siemens 30 090 GP 819 SAA 1006 saa 1070
    Text: BSE D • Ö23b320 QQlb^BO T M S I P NPN Silicon RF Transistor SIEMENS/ SPCLi SEMICONDS T'SI'I? BF P193 • For low-noise, high-gain amplifiers up to 2 GHz. • For linear broadband amplifiers. • ff = 8 GHz. F = 1.2 dB at 800 MHz. ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		PDF 23b320 BFP193 62702-F OT-143 zq 405-MF siemens 30 090 GP 819 SAA 1006 saa 1070

    transistor BF 506

    Abstract: BF 194 transistor BF506 transistor bf 194 transistor bf 193 transistor f 506 9BMS pnp vhf transistor
    Text: BF 506 SILICON PLANAR PNP VH F O SC ILLA T O R M IX E R The B F 506 is a silicon planar epitaxial PN P transistor in Jedec T O -9 2 plastic package. It is intended for use as mixer and oscillator in the V H F range. However, it may also be used as not controlled preamplifier at low noise.


    OCR Scan     		PDF TQ-92 transistor BF 506 BF 194 transistor BF506 transistor bf 194 transistor bf 193 transistor f 506 9BMS pnp vhf transistor

    transistor BC 575

    Abstract: BC 194 TRANSISTORS transistor bf 196 transistor bf 194 b BF 194 transistor transistor bf 195 77 ic marking code BF 194 npn transistor 6520* transistor BFY90
    Text: T E L E F U N K E N E L E C T R O N IC m D fllC fl'îSO Q 'îb 000533 b 3 BFY 90 Ml e l e c t r o n i c Creative Technologies Silicon NPN Epitaxial Planar R F Transistor Applications: General up to GHz range Features: • Power gain 8 dB 800 MHz • Noise figure < 5 dB


    OCR Scan     		PDF 569-GS transistor BC 575 BC 194 TRANSISTORS transistor bf 196 transistor bf 194 b BF 194 transistor transistor bf 195 77 ic marking code BF 194 npn transistor 6520* transistor BFY90

    BF 234 transistor

    Abstract: BC 194 TRANSISTORS transistor bf 196 Electronic car ignition circuit BF 194 npn transistor DIN I diode marking code BUX BF 194 transistor BUX37 transistor marking code 41 BF
    Text: 17E T> m TELEFUNKEN ELECTRONIC ÔRSOÜSfc. 000*1577 1 • ALG6 . B U X 37 TnMLUFSBMCSdiii] electronic C fe â h v i 1 ie h n o lo 6 * s Silicon NPN Darlington Power Transistor Applications: Electronic car ignition circuit, general purposes switching application


    OCR Scan     		PDF 15A3DIN BF 234 transistor BC 194 TRANSISTORS transistor bf 196 Electronic car ignition circuit BF 194 npn transistor DIN I diode marking code BUX BF 194 transistor BUX37 transistor marking code 41 BF

    3866S

    Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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    Transistor BFR 135

    Abstract: Transistor BFR Transistor BFR 35 transistor K 1412
    Text: SIEMENS BFR 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • f f = 8GHz F = 1.3dB at 900MHz 1=B 11 m Q62702-F1510 o li RCs CO BFR 193W 10 ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF 900MHz OT-323 Q62702-F1510 Transistor BFR 135 Transistor BFR Transistor BFR 35 transistor K 1412

    transistor marking zg

    Abstract: sot-23 Transistor MARKING CODE ZG
    Text: SIEMENS BFR 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F=1.3dEl at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    OCR Scan     		PDF 900MHz OT-23 Q62702-F1218 BFR193 transistor marking zg sot-23 Transistor MARKING CODE ZG

    q1221

    Abstract: No abstract text available
    Text: SIEMENS BFR 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • f j = 8GHz F = 1.3dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! 1= B Package H


    OCR Scan     		PDF 900MHz Q62702-F1510 OT-323 535b05 BFR193W IS21I2= 23SL0S q1221

    bfr193

    Abstract: No abstract text available
    Text: SIEMENS BFR 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • f j = 8GHz F - 1.3dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Q62702-F1218 Pin Configuration


    OCR Scan     		PDF 900MHz Q62702-F1218 OT-23 Junc01 0535bGS P155154 bfr193

    transistor bf 193

    Abstract: Siemens ESP 100
    Text: SIEMENS BFP 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fr = 8GHz F = 1 .3 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration


    OCR Scan     		PDF 900MHz Q62702-F1282 OT-143 transistor bf 193 Siemens ESP 100

    TRANSISTOR 131-6 BJ 946

    Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
    Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise


    OCR Scan     		PDF B3-B3715 B3715-X-X-7600 TRANSISTOR 131-6 BJ 946 transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16

    07027

    Abstract: 1.0037
    Text: SIEMENS BFP 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • ¿r = 8GHz F =1.3dB at 900MHz Package BFP193W SOT-343 RCs Q62702-F1577 1= E 2=C 3=E CÛ !l ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF 900MHz BFP193W Q62702-F1577 OT-343 BFP193W 07027 1.0037

    APC UPS CIRCUIT DIAGRAM rs 1500

    Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
    Text: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO


    OCR Scan     		PDF AF106 AF106 APC UPS CIRCUIT DIAGRAM rs 1500 APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700

    SIEMENS BST 68

    Abstract: SIEMENS BST 68 L
    Text: SIEMENS BFP 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    OCR Scan     		PDF 900MHz Q62702-F1577 OT-343 H35b05 BFP193W fl53SbOS SIEMENS BST 68 SIEMENS BST 68 L

    transistor bf 196

    Abstract: BF 194 transistor transistor bf 195 ge-2 transistor BF 194 npn transistor transistor bf 194 transistor bf 193 BF173 bf 173 transistor transistor bf 194 E C B
    Text: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: FS-ZF-Verstärkerstufen in Em itterschaltung. Besonders in Video-ZF-Endstufen Applications: Video IF am p lifier stages in com m on e m itter configuration,


    OCR Scan     		PDF