TRANSISTOR BD650 Search Results

TRANSISTOR BD650 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR BD650 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BUV48I Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable	Original	2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046	PDF
r3673 Abstract: Y1031 mp150s R3672 r3673 Philippines TIC106D Thyristor TIC226D Philippines TIP43 transistor bf64 bd657 Text: CIRCUIT PROTECTION PRODUCTS February, 2006 Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team TO-220 Packaged Transistor, Thyristor & Overvoltage Protection Product Change Notification	Original	O-220 BLBF39 MP150SG, KTMC-1030NAP, thyrisTIP42C-S TIP42-S TIP43 TIP43-S r3673 Y1031 mp150s R3672 r3673 Philippines TIC106D Thyristor TIC226D Philippines TIP43 transistor bf64 bd657	PDF
r3673 Abstract: Y1031 TIC106D Thyristor r3673 Philippines R3672 TIP43 BD657 transistor bf65 BF65-S transistor bf64 Text: CIRCUIT PROTECTION PRODUCTS February, 2006 Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team TO-220 Packaged Transistor, Thyristor & Overvoltage Protection Product Change Notification	Original	O-220 BLBF39 MP150SG, KTMC-1030NAP, thyrisTIP42C-S TIP42-S TIP43 TIP43-S r3673 Y1031 TIC106D Thyristor r3673 Philippines R3672 TIP43 BD657 transistor bf65 BF65-S transistor bf64	PDF
THINKI transistor catalog Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747 Text: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003	Original	2SA914 O-126 2SA900 2SC2556 2SC2556A LM317K O-220 LM317T THINKI transistor catalog audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747	PDF
Untitled Abstract: No abstract text available Text: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS RoHS compliant* Designed for Complementary Use with BD646, BD648, BD650 and BD652 62.5 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 8 A Continuous Collector Current B 1 C 2 Minimum hFE of 750 at 3V, 3 A	Original	BD645, BD647, BD649, BD651 BD646, BD648, BD650 BD652 O-220 BD645	PDF
Untitled Abstract: No abstract text available Text: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS RoHS compliant* Designed for Complementary Use with BD646, BD648, BD650 and BD652 62.5 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 8 A Continuous Collector Current B 1 C 2 Minimum hFE of 750 at 3V, 3 A	Original	BD645, BD647, BD649, BD651 BD646, BD648, BD650 BD652 O-220 BD645	PDF
Untitled Abstract: No abstract text available Text: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS RoHS compliant* Designed for Complementary Use with BD646, BD648, BD650 and BD652 62.5 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 8 A Continuous Collector Current B 1 C 2 Minimum hFE of 750 at 3V, 3 A	Original	BD645, BD647, BD649, BD651 BD646, BD648, BD650 BD652 O-220 BD645	PDF
BD649 Abstract: BD645 BD651 BD647 BD649 equivalent bd650 bd649 Bd645 equivalent BD650 BD646 BD648 Text: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW	Original	BD645, BD647, BD649, BD651 BD646, BD648, BD650 BD652 O-220 BD645 BD649 BD645 BD651 BD647 BD649 equivalent bd650 bd649 Bd645 equivalent BD646 BD648	PDF
bd648 Abstract: bd652 Text: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW	Original	BD646, BD648, BD650, BD652 BD645, BD647, BD649 BD651 O-220 BD646 bd648 bd652	PDF
BD648 Abstract: BD646 transistor bd650 bd650 bd649 BD65 BD645 BD647 BD649 BD650 BD651 Text: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW	Original	BD646, BD648, BD650, BD652 BD645, BD647, BD649 BD651 O-220 BD646 BD648 BD646 transistor bd650 bd650 bd649 BD65 BD645 BD647 BD650 BD651	PDF
BD652 Abstract: No abstract text available Text: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A This series is currently available, but	Original	BD646, BD648, BD650, BD652 BD645, BD647, BD649 BD651 O-220 BD646 BD652	PDF
BD646 Abstract: No abstract text available Text: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A This series is obsolete and	Original	BD646, BD648, BD650, BD652 BD645, BD647, BD649 BD651 O-220 BD646 BD646	PDF
transistor bd647 Abstract: BD647 BD649 bd645 transistor BD645 BD651 bd648 BD646 BD650 BD652 Text: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW	Original	BD645, BD647, BD649, BD651 BD646, BD648, BD650 BD652 O-220 BD645 transistor bd647 BD647 BD649 bd645 transistor BD645 BD651 bd648 BD646 BD652	PDF
transistor bd650 Abstract: BD650 transistor bd648 BD648 BD646 BD645 BD647 BD649 BD651 BD652 Text: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW	Original	BD646, BD648, BD650, BD652 BD645, BD647, BD649 BD651 O-220 BD646 transistor bd650 BD650 transistor bd648 BD648 BD646 BD645 BD647 BD651 BD652	PDF

BD648 Abstract: BD650 BD646 BD645 BD647 BD649 BD651 BD652 transistor bd650 Text: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● MAY 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD645, BD647, BD649 and BD651 TO-220 PACKAGE TOP VIEW ● 62.5 W at 25°C Case Temperature	Original	BD646, BD648, BD650, BD652 BD645, BD647, BD649 BD651 O-220 BD646 BD648 BD650 BD646 BD645 BD647 BD651 BD652 transistor bd650	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan		PDF
TRansistor 648 Abstract: power factor PIC circuit transistor bd646 BD646 lco8a LCO 8A BD650 LE17 BD645 BD649 Text: MAGNA Magna Park, Coventry Road, Lutterworth Leicestershire LE17 4JB, England Sales telephone: 01455 554711 Adm in telephone: 01455 552505 Fax: 01455 558843 FS » 2 3 » BD646; 648 BD650; 652 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m o n o lith ic D arlin gton c irc u it fo r audio o u tp u t stages and general	OCR Scan	BD646; BD650; T0-220 BD645, BD647, BD649 BD651. BD646 Junc650; 7Z67332 TRansistor 648 power factor PIC circuit transistor bd646 lco8a LCO 8A BD650 LE17 BD645	PDF
B0647 Abstract: B0645 bd649 TAG 064 Text: BOMS, BD647, BD649, BD651 NPN SILICON POWER DARUNG70NS Copyrtght C 1997, Power Innovations Limited, 1893 - REVISED M ARCH 1997 • Designed for Complementary Use with BD646, BD648, BD650 and BD652 • 62.5 W at 25°C Case Temperature	OCR Scan	BD647, BD649, BD651 DARUNG70NS BD646, BD648, BD650 BD652 O-220 BD645 B0647 B0645 bd649 TAG 064	PDF
transistor bd650 Abstract: b0648 b0652 BD646 BD648 BD650 BD652 BD645 BD647 BD649 Text: TBANSYS BD646, BD648, BD650, BD652 pnp silic o n p o w e r d a rlin g to n s mm fUCTROMICS LIMITED TO-220 PACKAGE TOP VIEW • Designed for Complementary Use with BD645, BD647, BD649 and BD651 • 62.5 W at 25°C Case Temperature B C • 8 A Continuous Collector Current	OCR Scan	BD646, BD648, BD650, BD652 BD645, BD647, BD649 BD651 O-22C) BD646 transistor bd650 b0648 b0652 BD646 BD648 BD650 BD652 BD645 BD647	PDF
50t65 Abstract: bd650 BD644 Text: BD644; 646; 648 BD650; 652 J SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a m onolithic Darlington circuit. They are housed in a TO-220 envelope and intended fo r applications such as audio output stages, switching, and general amplifiers.	OCR Scan	BD644; BD650; O-220 BD643, BD645, BD647, BD651. BD644 50t65 bd650 BD644	PDF
Untitled Abstract: No abstract text available Text: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • MAY 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD645, BD647, BD649 and BD651 T0-220 PACKAGE TOP VIEW • 62.5 W at 25 C Case Temperature	OCR Scan	BD646, BD648, BD650, BD652 BD645, BD647, BD649 BD651 T0-220 BD646	PDF
bd649 Abstract: BD651 Text: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • MAY 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD646, BD648, BD650 and BD652 T0-220 PACKAGE TOP VIEW • 62.5 W at 25 C Case Temperature	OCR Scan	BD645, BD647, BD649, BD651 BD646, BD648, BD650 BD652 T0-220 BD645 bd649	PDF
D 1991 AR Abstract: BD852 transistor d 1991 ar TRansistor 648 DIODE 646 on 651 diode Text: BD644; 646; 648 _ j \ BD650^652_ PHILIPS INTERNATIONAL SbE D • 7 1 1 0 0 2 b □ D M E C144 7 b 7 H P H I N T -33-31 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Darlington circuit. They are housed in a T 0 -2 2 0	OCR Scan	BD644; BD650 711002b BD643, BD645, BD647, BD651. BD644 BD650; D 1991 AR BD852 transistor d 1991 ar TRansistor 648 DIODE 646 on 651 diode	PDF

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TRANSISTOR BD650 Search Results

TRANSISTOR BD650 Result Highlights (5)

TRANSISTOR BD650 Datasheets Context Search

BUV48I

r3673

r3673

THINKI transistor catalog

Untitled

Untitled

Untitled

BD649

bd648

BD648

BD652

BD646

transistor bd647

transistor bd650

BD648

2N2222A 338

sx3704

TRansistor 648

B0647

transistor bd650

50t65

Untitled

bd649

D 1991 AR