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    TRANSISTOR BD139 N Search Results

    TRANSISTOR BD139 N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BD139 N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor BD139 N

    Abstract: TRANSISTOR NPN BD139 CIRCUIT DIAGRAM OF BD135 bd139 equivalent BD139 N transistor bd139 TRANSISTOR NPN BD140 bd139 data sheet BD139 transistor BD139 NPN transistor download datasheet
    Text: BD135 BD137/BD139 NPN SILICON TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD135, BD137 and BD139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi


    Original     		PDF BD135 BD137/BD139 BD135, BD137 BD139 OT-32 BD136 BD138 BD140. transistor BD139 N TRANSISTOR NPN BD139 CIRCUIT DIAGRAM OF BD135 bd139 equivalent BD139 N transistor bd139 TRANSISTOR NPN BD140 bd139 data sheet BD139 transistor BD139 NPN transistor download datasheet

    transistor BD 141

    Abstract: BD139G bd139 140 BD139-25 BD139 NPN transistor Bd139 operation of BD 139 bd135 diagram
    Text: BD135, BD137, BD139 Plastic Medium Power Silicon NPN Transistor This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http://onsemi.com Features


    Original     		PDF BD135, BD137, BD139 BD139 BD135 BD137 transistor BD 141 BD139G bd139 140 BD139-25 BD139 NPN transistor operation of BD 139 bd135 diagram

    TRANSISTOR BD 136

    Abstract: BD137 parameters BD139 BD139 h parameters power transistor bd139 TRANSISTOR BD139 BD135 BD137 BD139 circuits BD 139 & 140
    Text: ON Semiconductort BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60, 80 VOLTS 10 WATTS


    Original     		PDF BD135/D r14525 TRANSISTOR BD 136 BD137 parameters BD139 BD139 h parameters power transistor bd139 TRANSISTOR BD139 BD135 BD137 BD139 circuits BD 139 & 140

    BD139

    Abstract: BD135 power transistor bd139 transistor BD140 TRANSISTOR NPN BD139 BD136 BD137 BD140 bd139 Complement
    Text: KSD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD136 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : BD135 : BD137 : BD139 Collector Emitter Voltage : BD135


    Original     		PDF KSD135/137/139 O-126 BD136 BD140 BD135 BD137 BD139 BD139 BD135 power transistor bd139 transistor BD140 TRANSISTOR NPN BD139 BD137 bd139 Complement

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD135/BD137/BD139 TRANSISTOR（NPN） TO-126 FEATURES •High Current 1.5A 1. EMITTER ·Low Voltage(80V) 2. COLLECTOR 3. BASE 123 MAXIMUM RATINGS* TA=25℃ unless otherwise noted


    Original     		PDF O-126 BD135/BD137/BD139 O-126 BD135 BD137 BD139 150mA

    Untitled

    Abstract: No abstract text available
    Text: UTC BD139 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER TRANSISTORS FEATURES *High current max.1.5A *Low voltage (max.80V) APPLICATION *Driver stages in hi-fi amplifiers and television circuits. 1 TO-251 1:BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS


    Original     		PDF BD139 O-251 150mA 500mA 150mA, 100MHz QW-R213-010

    BD139 application

    Abstract: BD139 NPN transistor TRANSISTOR NPN BD139 BD139 BD139 NPN hFE-120 npn
    Text: UTC BD139 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER TRANSISTORS FEATURES *High current max.1.5A *Low voltage (max.80V) APPLICATION *Driver stages in hi-fi amplifiers and television circuits. 1 TO-251 1:BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS


    Original     		PDF BD139 O-251 QW-R213-010 BD139 application BD139 NPN transistor TRANSISTOR NPN BD139 BD139 BD139 NPN hFE-120 npn

    Untitled

    Abstract: No abstract text available
    Text: UTC BD139 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER TRANSISTORS FEATURES *High current max.1.5A *Low voltage (max.80V) APPLICATION *Driver stages in hi-fi amplifiers and television circuits. 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS


    Original     		PDF BD139 O-126 BD139-10 BD139-16 150mA 500mA 150mA, 100MHz QW-R204-007

    BD139 transistor

    Abstract: BD139 power transistor bd139 BD135 BD135 NPN transistor power transistor bd135 bd137 Transistor power transistor bd137 of bd139 TRANSISTOR BD139
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD135/BD137/BD139 TRANSISTOR NPN TO-126 FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) 1. EMITTER Collector current 1.5 A ICM: Operating and storage junction temperature range


    Original     		PDF O-126 BD135/BD137/BD139 O-126 BD135 BD137 BD139 BD139 transistor BD139 power transistor bd139 BD135 BD135 NPN transistor power transistor bd135 bd137 Transistor power transistor bd137 of bd139 TRANSISTOR BD139

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD135/BD137/BD139 TRANSISTOR NPN TO-126 FEATURES •High Current(1.5A) 1. EMITTER ·Low Voltage(80V) 2. COLLECTOR 3. BASE 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted )


    Original     		PDF O-126 BD135/BD137/BD139 O-126 BD135 BD137 BD139 150mA

    bd139 application note

    Abstract: BD139 NPN BD139 application
    Text: UTC BD139 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER TRANSISTORS FEATURES *High current max.1.5A *Low voltage (max.80V) APPLICATION *Driver stages in hi-fi amplifiers and television circuits. 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS


    Original     		PDF BD139 O-126 Tmb70 QW-R204-007 bd139 application note BD139 NPN BD139 application

    BD136

    Abstract: power transistor bd136 BD138 BD139 BD140 of transistor BD140 bd139 140 transistor BD138 of ic BD140 bd138 hfe
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD136/138/140 TRANSISTOR PNP TO – 126 FEATURES z High Current z Complement To BD135, BD137 And BD139 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF O-126 BD136/138/140 BD135, BD137 BD139 BD136 BD138 BD140 BD136 power transistor bd136 BD138 BD139 BD140 of transistor BD140 bd139 140 transistor BD138 of ic BD140 bd138 hfe

    transistor bd139

    Abstract: BD136 bd140 Complement
    Text: BD136/138/140 BD136/138/140 Medium Power Linear and Switching Applications • Complement to BD135, BD137 and BD139 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original     		PDF BD136/138/140 BD135, BD137 BD139 O-126 BD136 BD138 BD140 transistor bd139 BD136 bd140 Complement

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BD139 NPN SILICON TRANSISTOR NPN POWER TRANSISTORS  FEATURES 1 * High current max.1.5A * Low voltage (max.80V) TO-251 1 TO-126  ORDERING INFORMATION Ordering Number Lead Free Halogen Free BD139L-xx-T60-K BD139G-xx-T60-K


    Original     		PDF BD139 O-251 O-126 BD139L-xx-T60-K BD139G-xx-T60-K BD139L-xx-TM3-T BD139G-xx-TM3-T

    BD140 pnp transistor

    Abstract: BD139 BD140H BD140
    Text: SEMICONDUCTOR BD140 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A B FEATURES ・High Current. Max. : -1.5A ・DC Current Gain : hFE=40Min. @IC=-0.15A ・Complementary to BD139. D C E F G H DIM A B C D E F G H J K L M N O P


    Original     		PDF BD140 40Min. BD139. BD140 pnp transistor BD139 BD140H BD140

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BD140 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A B FEATURES ・High Current. Max. : -1.5A ・DC Current Gain : hFE=40Min. @IC=-0.15A ・Complementary to BD139. D C E F G H DIM A B C D E F G H J K L M N O P


    Original     		PDF 40Min. BD139. BD140

    BD139H

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BD139 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A B FEATURES ・High Current. Max. : 1.5A ・DC Current Gain : hFE=40Min. @IC=0.15A ・Complementary to BD140. D C E F G H DIM A B C D E F G H J K L M N O P J


    Original     		PDF 40Min. BD140. BD139 BD139H

    BD139H

    Abstract: power transistor bd139 data sheet of bd139 BD139 BD140 transistor BD139 N BD139 p
    Text: SEMICONDUCTOR BD139 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A B FEATURES ・High Current. Max. : 1.5A ・DC Current Gain : hFE=40Min. @IC=0.15A ・Complementary to BD140. D C E F G H DIM A B C D E F G H J K L M N O P J


    Original     		PDF BD139 40Min. BD140. BD139H power transistor bd139 data sheet of bd139 BD139 BD140 transistor BD139 N BD139 p

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BD140 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A B FEATURES D C E High Current. Max. : -1.5A F DC Current Gain : hFE=40Min. @IC=-0.15A Complementary to BD139. G H DIM A B C D E F G H J K L M N O P J K MAXIMUM RATING (Ta=25


    Original     		PDF BD140 40Min. BD139. -30mA, -150mA, -500mA, -50mA -500mA

    Untitled

    Abstract: No abstract text available
    Text: KSD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 136 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit 45 V : BD137 60 V : BD139 80 V 45 V : BD137 60 V : BD139 80


    OCR Scan     		PDF KSD135/137/139 BD140 BD137 BD139 BD135 BD137,

    BD139 time

    Abstract: bd140 Complement BD136
    Text: BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD135, BD137 and BD139 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Collector Base Voltage : BD136 : BD138 : BD140 Collector Emitter Voltage : BD136


    OCR Scan     		PDF BD136/138/140 BD135, BD137 BD139 BD136 BD138 BD140 BD139 time bd140 Complement BD136

    Untitled

    Abstract: No abstract text available
    Text: BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD135, BD 137 and BD139 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit - 45 V : BD138 - 60 V : BD140 - 80 V - 45 V C ollector Base Voltage


    OCR Scan     		PDF BD136/138/140 BD135, BD139 BD138 BD140 BD136

    bo 139

    Abstract: bd 1382 semiconductor bo 137 BD 266 S BD 139 N bd 317 BD139.6 TR bd 139 BD139 NPN BD 139 140
    Text: MOTORCL A SC 1EE D § L3b72S4 0GflM703 T | XSTRS/R F BD135,-6,-10,-16 BD137,-6,-10,-16 BD139,-6,-10,-16 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLA STIC M EDIUM POW ER SILIC O N NPN TR A N SISTO R 1.S AMPERE POWER TRANSISTOR . . . designed for use as audio amplifiers and drivers utilizing


    OCR Scan     		PDF L3b72S4 0GflM703 BD135 BD137 BD139 225AA bo 139 bd 1382 semiconductor bo 137 BD 266 S BD 139 N bd 317 BD139.6 TR bd 139 BD139 NPN BD 139 140

    BDXXX

    Abstract: BDxxx-10
    Text: BD135 BD137 BD139 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose n-p-n transistors in SOT-32 plastic envelope, recommended for driver stages in hi-fi amplifiers and television circuits.


    OCR Scan     		PDF BD135 BD137 BD139 OT-32 6D136, BD138 BD140are BD135, BD137 BD139 BDXXX BDxxx-10