TRANSISTOR BD 540 Search Results

TRANSISTOR BD 540 Result Highlights (6)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB

TRANSISTOR BD 540 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BD 140 transistor Abstract: MMJT9435 MOTOROLA TRANSISTOR motorola bjt Text: MOTOROLA Order this document by MMJT9435/D SEMICONDUCTOR TECHNICAL DATA MMJT9435 Preliminary Data Sheet Bipolar Power Transistors Motorola Preferred Device PNP Silicon • Collector –Emitter Sustaining Voltage — VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc	Original	PDF	MMJT9435/D MMJT9435 BD 140 transistor MMJT9435 MOTOROLA TRANSISTOR motorola bjt
BD 140 transistor Abstract: BD NPN transistors BJT IC Vce BJT npn motorola MOTOROLA TRANSISTOR MMJT9410 Text: MOTOROLA Order this document by MMJT9410/D SEMICONDUCTOR TECHNICAL DATA MMJT9410 Preliminary Data Sheet Bipolar Power Transistors Motorola Preferred Device NPN Silicon • Collector –Emitter Sustaining Voltage — VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc	Original	PDF	MMJT9410/D MMJT9410 BD 140 transistor BD NPN transistors BJT IC Vce BJT npn motorola MOTOROLA TRANSISTOR MMJT9410
Untitled Abstract: No abstract text available Text: Part Number: Integra IB2729M5 TECHNOLOGIES, INC. S-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor part number IB2729M5 is designed for S-Band ATC radar systems operating over the instantaneous bandwidth of 2.7-2.9 GHz. While operating in class C	Original	PDF	IB2729M5 IB2729M5 IB2729M5-REV-NC-DS-REV-NC
MMFT2N25E Abstract: 735 motorola make Text: MOTOROLA Order this document by MMFT2N25E/D SEMICONDUCTOR TECHNICAL DATA Product Preview MMFT2N25E TMOS E-FET High Energy Power FET N–Channel Enhancement–Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently.	Original	PDF	MMFT2N25E/D MMFT2N25E TransistorMMFT2N25E/D MMFT2N25E 735 motorola make
MMJT9435 Abstract: No abstract text available Text: MOTOROLA Order this document by MMJT9435/D SEMICONDUCTOR TECHNICAL DATA Bipolar Power Transistors MMJT9435 PNP Silicon Motorola Preferred Device • Collector –Emitter Sustaining Voltage — VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE	Original	PDF	MMJT9435/D MMJT9435 MMJT9435
MMJT9410 Abstract: No abstract text available Text: MOTOROLA Order this document by MMJT9410/D SEMICONDUCTOR TECHNICAL DATA Bipolar Power Transistors MMJT9410 NPN Silicon Motorola Preferred Device • Collector –Emitter Sustaining Voltage — VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE	Original	PDF	MMJT9410/D MMJT9410 MMJT9410
Untitled Abstract: No abstract text available Text: y i / i y j x i y n -48V to +5V Output Switching DC-DC Converter _ G eneral Description _ Features The MAX650 is a low -pow er fixed +5V output switching DC-DC converter designed for operation from very high negative input voltages. All control functions and a 140V,	OCR Scan	PDF	MAX650 250mA AX650 388mm) MAX650
transistor BU 5027 Abstract: transistor KT 816 transistor SD 5024 J 5027-R bu 5027 KT 817 transistor KT315 Transistor KU 607 MDA 2020 RFT e 355 d Text: SERVICE-MITTEILUNGEN VEB IN D U ST RIEV ERT RIEB R U N D FU N K UND FE R N SE H EN NOV/DEZ B l Iradi o -teievlsion I 1 9 IO 8 0 SEITE 1-8 Mitteilung aus dem VEB RFT Industrievertrieb R.u.F. Leipzig / S Änderung am Kassettenrecorder ELKKTRONTKA - 302 Der Sowjet. Hersteller hat im	OCR Scan	PDF	KT315 Indikatoransteuerung02 136/G ASZ1016 transistor BU 5027 transistor KT 816 transistor SD 5024 J 5027-R bu 5027 KT 817 transistor Transistor KU 607 MDA 2020 RFT e 355 d
bc 540 Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N Text: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0	OCR Scan	PDF	BC1611) BCY58 BCY59 BD1361) BD436' BC432' BC547 bc 540 TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
transistor BD 540 Abstract: Transistor BFT 99 Transistor BFR 39 BFW 10 fet Transistor BFR 80 Transistor BFT 10 transistor BFT 41 371b Transistor BFT 42 TRANSISTOR bd 108 Text: 6 0 9 y e a MICRO ELECTRONICS CORF D E \| b [ m 7 f i a DOGObS? D \| 02 82D 00657 D *7^ 12.5?“ N O. B C W 94 BCW 95 BCW 96 BCW 97 B C X 25 BCX26 B C X 40 B C X 45 BCX 46 ' ' M AXIM UM R A T IN G S V C E S A T Ul u. TYPE X P O L A R IT Y Medium Kower Am plifiers and Switches	OCR Scan	PDF	609yea BCW94 O-92F BCW96 BCW95 BCW97 BCW94 transistor BD 540 Transistor BFT 99 Transistor BFR 39 BFW 10 fet Transistor BFR 80 Transistor BFT 10 transistor BFT 41 371b Transistor BFT 42 TRANSISTOR bd 108
transistor bd 370 Abstract: transistor BD 110 Text: MOTOROLA Order this document by MMJT9435/D SEMICONDUCTOR TECHNICAL DATA Bipolar Power Transistors MMJT9435 PNP Silicon • Collector -Emitter Sustaining Voltage — VcEOisusI = 30 Vdc Min @ Iq = 10 mAdc • High DC Current Gain — hpE = 125 (Min) @ lc = 0.8Adc	OCR Scan	PDF	MMJT9435/D OT-223 MMJT9435 318E-04, transistor bd 370 transistor BD 110
transistor bd 370 Abstract: No abstract text available Text: MOTOROLA Order this document by MMJT94I0/D SEMICONDUCTOR TECHNICAL DATA Bipolar Power Transistors MMJT9410 NPN Silicon • Collector -Emitter Sustaining Voltage — V q e o s u s = 30 Vdc (Min) @ lc = 10 mAdc • High DC Current Gain — hpE = 85 (Min) @ lc = 0.8 Adc	OCR Scan	PDF	MMJT94I0/D OT-223 MMJT9410 318E-04, MMJT9410/D transistor bd 370
BJT npn motorola Abstract: transistor bd 370 power transistor bd JT9410 motorola bjt Text: MOTOROLA Order this document by MMJT9410/D SEMICONDUCTOR TECHNICAL DATA M M Ü T9410 Preliminary Data Sheet B ipolar Pow er Transistors Motorola Preferred Device NPN Silicon • Collector -Emitter Sustaining Voltage — VcEO sus = 30 Vdc (Min) @ Iq = 10 mAdc	OCR Scan	PDF	MMJT9410/D T9410 OT-223 31SE-04, BJT npn motorola transistor bd 370 power transistor bd JT9410 motorola bjt
lb 156 Abstract: No abstract text available Text: MOTOROLA Order this document by MMJT9435/D SEMICONDUCTOR TECHNICAL DATA Bipolar Power Transistors M M JT9435 PNP Silicon • Collector -E m itte r Sustaining Voltage — V cEO isus^ = 30 Vdc Min @ Iq = 10 mAdc • High DC Current Gain — hpE = 125 (Min) @ lc = 0.8 Adc	OCR Scan	PDF	MMJT9435/D JT9435 318E-04, lb 156

Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MMFT2N25E/D SEMICONDUCTOR TECHNICAL DATA Product Preview TMOS E-FET High Energy Pow er FET N-Channel Enhancement-Mode Silicon Gate T h is a d va n ce d high v o lta g e T M O S E -F E T is d e s ig n e d to withstand high energy in the avalanche mode and switch efficiently.	OCR Scan	PDF	MMFT2N25E/D
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MMFT2N25E/D SEMICONDUCTOR TECHNICAL DATA Product Preview TMOS E-FET High Energy Power FET M MFT2N25E N-Channel Enhancement-Mode Silicon Gate T his a d va n ce d high v o lta g e T M O S E -F E T is d e s ig n e d to withstand high energy in the avalanche mode and switch efficiently.	OCR Scan	PDF	MMFT2N25E/D MFT2N25E
HN1V01H Abstract: No abstract text available Text: HN1V01H TOSHIBA TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN 1V 01H Unit in mm AM RADIO BAND TUNING APPLICATIONS. + 0.3 4.5 - 0.2 High Capacitance Ratio :CIV /C8V = 19.5 Typ. High Q :Q = 200 (Min.) Including Four Devices in FM8 Package (Flat Pack Mini 8Pin)	OCR Scan	PDF	HN1V01H HN1V01H
Untitled Abstract: No abstract text available Text: HN2V02H TOSHIBA TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN2V02H Unit in mm AM RADIO BAND TUNING APPLICATIONS. s MAXIMUM RATINGS Ta = 25°C (D1# D2, D3) SYMBOL VR Tj T stg RATING 16 125 -5 5 -1 2 5 UNIT V °C °C À i o I O 1. ANODE 1 5. CATHODE 3	OCR Scan	PDF	HN2V02H
H123 Abstract: MARKING D3 8pin HN2V02H Text: HN2V02H TOSHIBA TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN2V02H Unit in mm AM RADIO BAND TUNING APPLICATIONS. High Capacitance Ratio : CIV /C8V = 19.5 Typ. High Q : Q = 200 (Min.) Including Three Devices in FM8 Package (Flat Pack Mini 8Pin) Low Voltage Operation : V r = 1—8V	OCR Scan	PDF	HN2V02H H123 MARKING D3 8pin HN2V02H
Untitled Abstract: No abstract text available Text: TOSHIBA HN1V01H SILICON EPITAXIAL PLANAR TYPE HN1V 01 H Unit in mm A M RADIO BAND TUNING APPLICATIONS. • • • • High Capacitance Ratio :CIV /C8V = 19.5 Typ. High Q : Q = 200 (Min.) Including Four Devicesin FM8 Package (Flat Pack Mini 8Pin) Low Voltage Operation :	OCR Scan	PDF	HN1V01H
Untitled Abstract: No abstract text available Text: TOSHIBA HN1V02H TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN1V 02 H Unit in mm A M RADIO BAND TUNING APPLICATIONS. M A X IM U M RATINGS Ta = 25°C (D 1# D2) CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range 1 SYMBOL VR	OCR Scan	PDF	HN1V02H
D 5038 Transistor Horizontal Abstract: amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58 Text: POWER TRANSISTORS TRANSISTORS DE PUISSANCE 1975 NPN S ILIC O N TR A N S IS TO R S , D IF F U S E D MESA TR A N S IS TO R S NP N S IL IC IU M , M ESA D IF F U S E S 2N 1209 • LF large signal amplification A m p lific a tio n B F grands signaux - High current switching	OCR Scan	PDF	CB-69 14f4g D 5038 Transistor Horizontal amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan	PDF
HN1V02H Abstract: No abstract text available Text: TOSHIBA HN1V02H TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN 1V 02 H Unit in mm AM RADIO BAND TUNING APPLICATIONS. CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range 1 1 SYMBOL VR Tj T stg RATING 16 125 -5 5 -1 2 5 UNIT V	OCR Scan	PDF	HN1V02H HN1V02H

TRANSISTOR BD 540 Search Results

TRANSISTOR BD 540 Result Highlights (6)

TRANSISTOR BD 540 Datasheets Context Search

BD 140 transistor

BD 140 transistor

Untitled

MMFT2N25E

MMJT9435

MMJT9410

Untitled

transistor BU 5027

bc 540

transistor BD 540

transistor bd 370

transistor bd 370

BJT npn motorola

lb 156

Untitled

Untitled

HN1V01H

Untitled

H123

Untitled

Untitled

D 5038 Transistor Horizontal

2sb504

HN1V02H