TRANSISTOR BD 288 Search Results

TRANSISTOR BD 288 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR BD 288 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BD140-10 Abstract: BD136 BD140 application circuits circuits of ic BD140 BD136-D BD138 BD140 bd138 hfe transistor bd 137 Text: ON Semiconductort BD136 BD138 BD140 BD140-10 Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 1.5 AMPERE POWER TRANSISTORS PNP SILICON 45, 60, 80 VOLTS	Original	BD136/D r14525 BD140-10 BD136 BD140 application circuits circuits of ic BD140 BD136-D BD138 BD140 bd138 hfe transistor bd 137	PDF
TRANSISTOR BD 136 Abstract: BD137 parameters BD139 BD139 h parameters power transistor bd139 TRANSISTOR BD139 BD135 BD137 BD139 circuits BD 139 & 140 Text: ON Semiconductort BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60, 80 VOLTS 10 WATTS	Original	BD135/D r14525 TRANSISTOR BD 136 BD137 parameters BD139 BD139 h parameters power transistor bd139 TRANSISTOR BD139 BD135 BD137 BD139 circuits BD 139 & 140	PDF
MMJT9435 Abstract: No abstract text available Text: ON Semiconductort MMJT9435 Bipolar Power Transistors ON Semiconductor Preferred Device PNP Silicon POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.275 VOLTS • Collector –Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain —	Original	MMJT9435 r14525 MMJT9435/D MMJT9435	PDF
MMJT9410 Abstract: power bjt Text: ON Semiconductort MMJT9410 Bipolar Power Transistors ON Semiconductor Preferred Device NPN Silicon POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.2 VOLTS • Collector –Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain —	Original	MMJT9410 r14525 MMJT9410/D MMJT9410 power bjt	PDF
ph 4148 zener diode Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148 Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS	Original	DN-40 74ABT126 74ABT2240 X3G-BZX84-C7V5 X3G-BZX84-C9V1 ph 4148 zener diode philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148	PDF
Keithley s900 Abstract: n4212 Keithley 7700 N4050 3B103 3B159 N 4212 transistor N4212 RT9602 BdP 285 Text: DATE D’ORIGINE DATE ORIGINATED AUTEUR/ORIGINATOR: RT96-024 MARCH 22 1996 SEMICONDUCTOR OBJECT/SUBJECT: NUMÉRO DE RAPPORT REPORT NUMBER PAGE / SHEET 1 de/ of 80 Final Electrical Parameter Capability and Design Rule Evaluation of the 1.2 µm N-Well Single Poly Double Metal Process.	Original	RT96-024 enviro1995, Keithley s900 n4212 Keithley 7700 N4050 3B103 3B159 N 4212 transistor N4212 RT9602 BdP 285	PDF
ADC 808 Abstract: BD808 power transistor audio amplifier 500 watts BD810 BD807 4422 datasheet 890 f 562 ic pdf datasheet mst 720 bd 808 BD 266 S Text: BD808 BD810 * Plastic High Power Silicon PNP Transistor *ON Semiconductor Preferred Device . . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS	Original	BD808/D r14525 ADC 808 BD808 power transistor audio amplifier 500 watts BD810 BD807 4422 datasheet 890 f 562 ic pdf datasheet mst 720 bd 808 BD 266 S	PDF
BD676 Abstract: BD682 cross reference BD682 equivalent transistor BD 680 BD676 time failure transistor Bd682 Text: BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682 Plastic Medium-Power Silicon PNP Darlingtons http://onsemi.com .for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain – • • • hFE = 750 Min @ IC = 1.5 and 2.0 Adc	Original	BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682 BD675, BD676 BD682 cross reference BD682 equivalent transistor BD 680 BD676 time failure transistor Bd682	PDF
Untitled Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF586 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS "!#1 • Silicon NPN, TO-39 packaged VHF/UHF Transistor • Ft = 3.0 Ghz (typ) @ 300MHz, 14v, 90mA, • •	Original	MRF586 300MHz, 234567897ABC MRF586 16D97B	PDF
TRANSISTOR LWW 20 Abstract: TRANSISTOR LWW 17 TRANSISTOR LWW 21 AN569 MMFT3055V MMFT3055VT1 MMFT3055VT3 Text: MMFT3055V Power MOSFET 1 Amp, 60 Volts N–Channel SOT–223 These Power MOSFETs are designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits	Original	MMFT3055V r14525 MMFT3055V/D TRANSISTOR LWW 20 TRANSISTOR LWW 17 TRANSISTOR LWW 21 AN569 MMFT3055V MMFT3055VT1 MMFT3055VT3	PDF
MMFT3055VLT1 Abstract: TRANSISTOR LWW 21 TRANSISTOR LWW 17 MMFT3055VLT3 TRANSISTOR LWW 20 MMFT3055VL AN569 Text: MMFT3055VL Power MOSFET 1 Amp, 60 Volts N–Channel SOT–223 These Power MOSFETs are designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits	Original	MMFT3055VL r14525 MMFT3055VL/D MMFT3055VLT1 TRANSISTOR LWW 21 TRANSISTOR LWW 17 MMFT3055VLT3 TRANSISTOR LWW 20 MMFT3055VL AN569	PDF
OF4455 Abstract: OT239 philips AS2000P triac ot239 phx4nq60e of4453 TDA8855H OF4455 diode OF4453 diode AS2000P Text: Philips Semiconductors Product Discontinuation Notice DN53 Exhibit A June 30, 2004 SEE DN53 NOTICE LETTER FOR APPLICABLE LAST TIME BUY TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.	Original	Code357A3 30-Jun-04 VY27357A3 OF4455 OT239 philips AS2000P triac ot239 phx4nq60e of4453 TDA8855H OF4455 diode OF4453 diode AS2000P	PDF
TRANSISTOR LWW 21 Abstract: MMFT3055VL TRANSISTOR LWW 20 Text: MMFT3055VL Power MOSFET 1 Amp, 60 Volts N–Channel SOT–223 These Power MOSFETs are designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits	Original	MMFT3055VL MMFT3055VLT1 MMFT3055VLT3 318E-04 OT-223 O-261) TRANSISTOR LWW 21 TRANSISTOR LWW 20	PDF
transistor bD 288 Abstract: TRANSISTOR 287 A transistor D 288 transistor bd 126 R339 Text: 2SC D • ô23Sb05 0Q0M3M2 7 M S I E 6 PIMP Silicon Planar Transistors SIEMENS AKTIENGESELLSCHAF 04342 T -3 3 -/? BD 287 BD 288 ° - BD 287 and BD 288 are epitaxial planar transistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . The collector is electrically connected to the metallic mounting area.	OCR Scan	23Sb05 125min. 62702-D Q62702-D901 62902-B63 62902-B62 023SbQ5 23SbQS transistor bD 288 TRANSISTOR 287 A transistor D 288 transistor bd 126 R339	PDF

8D438 Abstract: 8D442 8D436 D442 SD436 TRANSISTOR BD 437 BD transistor BD 35 transistor BD434 BD436 MOTOROLA Text: MOTOROLA SC -CXSTRS/R “Tb FÏ 6 3 6 7 2 5 4 M O T O R O L A SC X S T R S / R F 96 D 80 596 TECHNICAL DATA D 7 r'i3-'/f 4 AMPERE POWER TRANSISTOR PNP SILICON PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR . . . for amplifier and switching applications Complementary	OCR Scan	b3b7E54 BD434, BD436 BD438, BD440 BD442 BD433/435/437/439/441. 8D438 8D442 8D436 D442 SD436 TRANSISTOR BD 437 BD transistor BD 35 transistor BD434 BD436 MOTOROLA	PDF
D 5038 Transistor Horizontal Abstract: amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58 Text: POWER TRANSISTORS TRANSISTORS DE PUISSANCE 1975 NPN S ILIC O N TR A N S IS TO R S , D IF F U S E D MESA TR A N S IS TO R S NP N S IL IC IU M , M ESA D IF F U S E S 2N 1209 • LF large signal amplification A m p lific a tio n B F grands signaux - High current switching	OCR Scan	CB-69 14f4g D 5038 Transistor Horizontal amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58	PDF
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan		PDF
BD438 equivalent Abstract: bd679 PNP transistor BD878 BD437 equivalent bd442 equivalent Case 77-08 bd676 Circuit Schematic BD438 356SR BD442 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD438 BD440 BD442 P lastic Medium Power Silicon PNP Transistor . . . for amplifier and switching applications. Complementary types are BD437 and BD441. 4.0 AMPERES POWER TRANSISTORS P N P SILICON CASE 77-08 TO-225AA TYPE	OCR Scan	BD437 BD441. BD438 BD440 BD442 O-225AA BD438 equivalent bd679 PNP transistor BD878 BD437 equivalent bd442 equivalent Case 77-08 bd676 Circuit Schematic 356SR	PDF
HBF4727A Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S Text: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: >1/1>1X1>1/1 19-2886; Rev 0; 5/92 4 8 V to + 5 V O u tp u t S w itc h in g D C -D C C o n v e rte r « The M A X 650 fe a tu re s u s e r-c o n tro lla b le o p e ra tin g fre q u e n c y a n d a s e p a ra te low v o lta g e d e te c to r w ith a d ju s t	OCR Scan		PDF
b0725 Abstract: B0719 BD721 TRANSISTOR L 287 A b0721 BD723 BD439 BD719 BD720 BD725 Text: BD719 BD721 BD723 BD725 PHILIPS INTERNATIONAL SbE 3 • 711002b 0 0 4 2 citîb ObS ■ PHIN 7 -33-tl SILICON EPITAXIAL-BASE POWER TRANSISTOR NPN transistor in a SOT32 plastic envelope intended fo r use in audio o u tp u t and general purpose am plifier applications. BD719 is equivalent to BD439. PNP complements are BD720; 722; 724 and	OCR Scan	BD719 BD721 BD723 BD725 7110fl2b 0042cnb BD439. BD720; BD726. b0725 B0719 BD721 TRANSISTOR L 287 A b0721 BD439 BD720 BD725	PDF
TRANSISTOR tip122 CHN 949 Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175 Text: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.	OCR Scan	38v01 TRANSISTOR tip122 CHN 949 E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175	PDF
ksd 302 250v, 10a Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle	OCR Scan	CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643	PDF
motorola power transistor to-126 Abstract: B0433 B0435 BD435 BD437 BD435i B0437 motorola 80439 BD433 BD439 Text: MOTOROLA SC -CXSTRS/R F3- 6 3 6 7 2 54 MOTOROLA- SC DE J b 3 t i 7 B S l4 00005=13 T 96 D X S T R S i R _F D 80593 -r~ BD433, BD435 BD437, BD439 BD441 MOTOROLA m SEMICONDUCTOR TECHNICAL DATA 4 AMPERE POWER TRANSISTOR NPN SILICON PLASTIC M EDIUM POWER SILICON	OCR Scan	b3b7a54 00flGST3 BD434/436/438/440/442 BD433 BD435 BD437 BD439 BD441 motorola power transistor to-126 B0433 B0435 BD435i B0437 motorola 80439	PDF

TRANSISTOR BD 288 Search Results

TRANSISTOR BD 288 Result Highlights (5)

TRANSISTOR BD 288 Datasheets Context Search

BD140-10

TRANSISTOR BD 136

MMJT9435

MMJT9410

ph 4148 zener diode

Keithley s900

ADC 808

BD676

Untitled

TRANSISTOR LWW 20

MMFT3055VLT1

OF4455

TRANSISTOR LWW 21

transistor bD 288

8D438

D 5038 Transistor Horizontal

2sb504

BD438 equivalent

HBF4727A

Untitled

b0725

TRANSISTOR tip122 CHN 949

ksd 302 250v, 10a

motorola power transistor to-126