TRANSISTOR BD 244 Search Results

TRANSISTOR BD 244 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR BD 244 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
pin configuration transistor bd140 Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139	Original	BD136 BD138 BD140 BD140-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A pin configuration transistor bd140 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136	PDF
BD165 Abstract: TRANSISTOR BD 168 TRANSISTOR bd165 BD NPN transistors transistor BD 140 BD 140 transistor BD169 power transistor audio amplifier 500 watts 10 watt power transistor bd Motorola Bipolar Power Transistor Data Text: MOTOROLA Order this document by BD165/D SEMICONDUCTOR TECHNICAL DATA BD165 BD169 Plastic Medium Power Silicon NPN Transistor 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60, 80 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi	Original	BD165/D* BD165/D BD165 TRANSISTOR BD 168 TRANSISTOR bd165 BD NPN transistors transistor BD 140 BD 140 transistor BD169 power transistor audio amplifier 500 watts 10 watt power transistor bd Motorola Bipolar Power Transistor Data	PDF
BD140 application circuits circuits Abstract: transistor bd136 transistor BD140 BD140 BD140-10 bd140 pin out transistor BD 140 BD136 MOTOROLA TRANSISTOR BD138 Text: MOTOROLA Order this document by BD136/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc	Original	BD136/D* BD136/D BD140 application circuits circuits transistor bd136 transistor BD140 BD140 BD140-10 bd140 pin out transistor BD 140 BD136 MOTOROLA TRANSISTOR BD138	PDF
BD139 MOTOROLA Abstract: BD139 h parameters BD139 transistor BD135 BD135 transistor BD 139 transistor U/25/20/TN26/15/850/power transistor bd135 BD137 parameters bd139 pin out BD135 Text: MOTOROLA Order this document by BD135/D SEMICONDUCTOR TECHNICAL DATA BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc	Original	BD135/D* BD135/D BD139 MOTOROLA BD139 h parameters BD139 transistor BD135 BD135 transistor BD 139 transistor U/25/20/TN26/15/850/power transistor bd135 BD137 parameters bd139 pin out BD135	PDF
transistor BD 325 Abstract: BD 157 transistor MOTOROLA TRANSISTOR BD157 BD158 BD159 BD157 MOTOROLA Text: MOTOROLA Order this document by BD157/D SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE	Original	BD157/D* BD157/D transistor BD 325 BD 157 transistor MOTOROLA TRANSISTOR BD157 BD158 BD159 BD157 MOTOROLA	PDF
Untitled Abstract: No abstract text available Text: Part Number: Integra IB1012S10 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor part number IB1012S10 is designed for L-Band avionics systems operating at 1025 to 1150 MHz. While operating	Original	IB1012S10 IB1012S10 IB1012S10-REV-NC-DS-REV-B	PDF
TMOS power FET Abstract: MMFT3055VT1 TMOS E-FET MMFT3055V MMFT3055VT3 transistor BD 135 Text: MOTOROLA Order this document by MMFT3055V/D SEMICONDUCTOR TECHNICAL DATA Product Preview MMFT3055V TMOS V SOT-223 for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This	Original	MMFT3055V/D MMFT3055V OT-223 MMFT3055V/D* TMOS power FET MMFT3055VT1 TMOS E-FET MMFT3055V MMFT3055VT3 transistor BD 135	PDF
BD 140 transistor Abstract: MMJT9435 MOTOROLA TRANSISTOR motorola bjt Text: MOTOROLA Order this document by MMJT9435/D SEMICONDUCTOR TECHNICAL DATA MMJT9435 Preliminary Data Sheet Bipolar Power Transistors Motorola Preferred Device PNP Silicon • Collector –Emitter Sustaining Voltage — VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc	Original	MMJT9435/D MMJT9435 BD 140 transistor MMJT9435 MOTOROLA TRANSISTOR motorola bjt	PDF
BD 140 transistor Abstract: BD NPN transistors BJT IC Vce BJT npn motorola MOTOROLA TRANSISTOR MMJT9410 Text: MOTOROLA Order this document by MMJT9410/D SEMICONDUCTOR TECHNICAL DATA MMJT9410 Preliminary Data Sheet Bipolar Power Transistors Motorola Preferred Device NPN Silicon • Collector –Emitter Sustaining Voltage — VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc	Original	MMJT9410/D MMJT9410 BD 140 transistor BD NPN transistors BJT IC Vce BJT npn motorola MOTOROLA TRANSISTOR MMJT9410	PDF
tegra 2 Abstract: IB0810M210 tegra BD 9280 CI 321 sar radar INTEGRA TECHNOLOGIES transistor BD 255 Text: Part Number: Integra IB0810M210 TECHNOLOGIES, INC. L-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB0810M210 is designed for L-Band radar systems operating over the instantaneous bandwidth of 870-990 MHz. While operating in class C	Original	IB0810M210 IB0810M210 IB0810M210-REV-NC-DS-REV-A tegra 2 tegra BD 9280 CI 321 sar radar INTEGRA TECHNOLOGIES transistor BD 255	PDF
MMFT2N25E Abstract: 735 motorola make Text: MOTOROLA Order this document by MMFT2N25E/D SEMICONDUCTOR TECHNICAL DATA Product Preview MMFT2N25E TMOS E-FET High Energy Power FET N–Channel Enhancement–Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently.	Original	MMFT2N25E/D MMFT2N25E TransistorMMFT2N25E/D MMFT2N25E 735 motorola make	PDF
IL311ANM Abstract: tda8362b ILa1519B1Q iff4n60 IN1307N tda8890 IL311AN IL91214AN MC74HC123AN IL258D Text: SEMICONDUCTOR PRODUCTS SHORT FORM CATALOG INTEGRAL 2010-2011 INTEGRAL JSC reserves the right to make changes in device design, specifications and other information identified in this publication without notice and assumes no responsibility for the use of any device described herein.	Original		PDF
MMJT9435 Abstract: No abstract text available Text: MOTOROLA Order this document by MMJT9435/D SEMICONDUCTOR TECHNICAL DATA Bipolar Power Transistors MMJT9435 PNP Silicon Motorola Preferred Device • Collector –Emitter Sustaining Voltage — VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE	Original	MMJT9435/D MMJT9435 MMJT9435	PDF
MMJT9410 Abstract: No abstract text available Text: MOTOROLA Order this document by MMJT9410/D SEMICONDUCTOR TECHNICAL DATA Bipolar Power Transistors MMJT9410 NPN Silicon Motorola Preferred Device • Collector –Emitter Sustaining Voltage — VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE	Original	MMJT9410/D MMJT9410 MMJT9410	PDF

transistor bd 202 Abstract: transistor BD 249 BDX 241 B0707 BD transistor transistor bd 911 transistor 2N 3055 5294 power transistor transistor BD 139 transistor bd 711 Text: TOP-3 general purpose transistor selector guide guide de sélection transistors TOP-3 usage général y TH O M SO N -CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide	OCR Scan	T0-220AB O-220AB 5-40V BD710 CB-244 transistor bd 202 transistor BD 249 BDX 241 B0707 BD transistor transistor bd 911 transistor 2N 3055 5294 power transistor transistor BD 139 transistor bd 711	PDF
BDX 241 Abstract: BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905 Text: TOP-3 general purpose transistor selector guide y guide de sélection transistors TO P-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide	OCR Scan	T0-220AB O-220AB 5-40V BD710 CB-19 BDX 241 BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905	PDF
Untitled Abstract: No abstract text available Text: BD244/A/B/C PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD243, BD243A, BD243B and BD 243C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol C ollector-E m ltter V oltage : BD244 Rating Unit	OCR Scan	BD244/A/B/C BD243, BD243A, BD243B BD244 BD244B BD244C BD244A	PDF
FX1115 Abstract: BLX65 TRANSISTOR D 471 IEC134 philips choke ferrite FX111 Text: N AMER P H I L IP S /D IS C RE TE bTE D • ^53131 J QD2^bD 3 231 BLX65 U.H.F./V.H.F. TRANSMITTING TRANSISTOR N-P-N transistor intended for use in c!ass-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V. It has a TO-39 metal envelope with the collector connected to the	OCR Scan	bb53T31 BLX65 O-39/1; FX1115 BLX65 TRANSISTOR D 471 IEC134 philips choke ferrite FX111	PDF
BD139 Abstract: transistor BD 139 BD 139 transistor BD139-6 BD 139 N BD 139-16 transistor bd 242 bd 3055 BD139 amplifier BD NPN transistors Text: BD 139 NPIM-EPITAXIAL-PLANAR-SILICON-TRANSISTOR • • • • • Driver fo r Audio A m plifier Active Convergenz Regulators Power Switching Pt o t = 6.5 W at T g = 60 oc • hFE > 40 at !C = - 1 5 0 mA • VcE sat < - 0 .5 V at lc = - 0 .5 A mechanical data	OCR Scan	BD139 40PEP 80PEP OT-32 OT-32 O-66P BD139 transistor BD 139 BD 139 transistor BD139-6 BD 139 N BD 139-16 transistor bd 242 bd 3055 BD139 amplifier BD NPN transistors	PDF
transistor BD 246 Abstract: transistor BD 135 transistor bd 242 BD135 switch BD139 BD139-6 transistor BD transistor BD 246 b transistor BD 249 bd135 texas instruments Text: BD135 NPN EPITAXIAL PLANAR SILICON TRANSISTOR 1171 DESIGNED FOR COMPLEMENTARY USE WITH BD136 • • • • Driver Stages Active Convergence Control Circuits Switching Application • • • Ptot = 6.5 W at T c = 60 °C hpE > 40 at lc = 150 mA VcE satl < 0.5 V at lc = 0.5 A	OCR Scan	BD135 BD136 STD-750. OT-32 40PEP 80PEP OT-32 O-66P transistor BD 246 transistor BD 135 transistor bd 242 BD135 switch BD139 BD139-6 transistor BD transistor BD 246 b transistor BD 249 bd135 texas instruments	PDF
transistor BD 246 Abstract: transistor BD 249 transistor BD 240 BD 35 transistor transistor bd 242 BD139-6 transistor BD 239 transistor BD245 BD135 transistor BD 241 Text: BDI 36 PNP EPITAXIAL PLANAR SILICON TRANSISTOR 1171 DESIGNED FOR COMPLEMENTARY USE WITH BD135 • • • • • • • Driver Stages Active Convergence Control Circuits Switching Application Ptot * 6.5 Wat TC * 60 <>c hpE > 40 at lc = —150 mA Vce sat < 0.5 V at lc “ - 0.5 A	OCR Scan	BD136 BD135 MIL-STD-750. OT-32 40PEP 80PEP OT-32 O-66P transistor BD 246 transistor BD 249 transistor BD 240 BD 35 transistor transistor bd 242 BD139-6 transistor BD 239 transistor BD245 BD135 transistor BD 241	PDF
BDX 241 Abstract: TRANSISTOR 246 transistor BD 240 transistor BD 246 TRANSISTOR Bd 137 BD139-6 transistor BD 249 transistor bd 242 transistor BD245 BD137 Text: BDI 37 NPflM EPITAXIAL PLANAR SILICON TRANSISTOR 117 1 D E S I G N E D F O R C O M P L E M E N T A R Y U S E W ITH B D 138 • Driver Stages • A ctive Convergence • C ontrol Circuits • Sw itching Application • Ptot = 6.5 W at T c = 60 ° C • hFE > 40 at lc = 150 m A	OCR Scan	BD137 BD138 MIL-STD-750. OT-32 OT-32 40PEP 80PEP BDX 241 TRANSISTOR 246 transistor BD 240 transistor BD 246 TRANSISTOR Bd 137 BD139-6 transistor BD 249 transistor bd 242 transistor BD245 BD137	PDF
c2688 L Abstract: TIP 29 transistor texas instruments tip29 npn tip equivalent transistor c 243 TIP 34 pnp BD NPN transistors TLP298 1N914 TIP29A Text: TYPES TIP29, TIP29A, TIP29B, TIP29C N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR POWEFI-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH TIP30, TIP30A, TIP30B, TIP30C • 30 W at 25°C Case Temperature • 1 A Rated Collector Current	OCR Scan	TIP29, TIP29A, TIP29B, TIP29C TIP30, TIP30A, TIP30B, TIP30C TIP29 TIP29A c2688 L TIP 29 transistor texas instruments tip29 npn tip equivalent transistor c 243 TIP 34 pnp BD NPN transistors TLP298 1N914	PDF
40872 Abstract: 40872 transistor 40871 2N6180 npn 40872 2N6175 2N6178 2N6179 40988 40636 Text: POWER TRANSISTOR TYPES FOR AUDIO-FREQUENCY LINEAR AMPLIFIERS 16Q 6 .5 16 Power Output 4n 8Ì2 Imped. 18 45 Output Transistors Circuit P-N-P 40979 (2N6292) 40980 (2N6111) - True Comp. 40816 (2N5495) (2N6269) 40817 (2N6111) - Comp. Darlington BDX 33 2N6386	OCR Scan	2N6292) 2N6111) 2N5495) 2N6269) 2N4036) 2N6386 TA8201 2N2102) 40872 40872 transistor 40871 2N6180 npn 40872 2N6175 2N6178 2N6179 40988 40636	PDF

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TRANSISTOR BD 244 Search Results

TRANSISTOR BD 244 Result Highlights (5)

TRANSISTOR BD 244 Datasheets Context Search

pin configuration transistor bd140

BD165

BD140 application circuits circuits

BD139 MOTOROLA

transistor BD 325

Untitled

TMOS power FET

BD 140 transistor

BD 140 transistor

tegra 2

MMFT2N25E

IL311ANM

MMJT9435

MMJT9410

transistor bd 202

BDX 241

Untitled

FX1115

BD139

transistor BD 246

transistor BD 246

BDX 241

c2688 L

40872