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    TRANSISTOR BCP56 Search Results

    TRANSISTOR BCP56 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BCP56 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTORS BJT bc548

    Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
    Text: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002


    Original     		PDF OT-623F OT-323 OT-23 OT-89 OT-223 O-92S O-226AE O-92L TRANSISTORS BJT bc548 jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302

    Untitled

    Abstract: No abstract text available
    Text: BCP56-16 Low power NPN Transistor General features • Silicon epitaxial planar NPN medium voltage transistor ■ SOT-223 plastic package for surface mounting circuits ■ Available in tape & reel packing ■ In compliance with the 2002/93/EC European Directive


    Original     		PDF BCP56-16 OT-223 2002/93/EC BCP53-16 OT-223 BCP5616

    bcp53 SOT-223

    Abstract: BCP5316 BCP53-16 BCP56-16
    Text: BCP53-16 LOW POWER PNP TRANSISTOR • ■ ■ ■ Ordering Code Marking BCP53-16 BCP5316 SILICON EPITAXIAL PLANAR PNP MEDIUM VOLTAGE TRANSISTOR SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS BCP56-16


    Original     		PDF BCP53-16 BCP5316 OT-223 BCP56-16 OT-223 bcp53 SOT-223 BCP5316 BCP53-16 BCP56-16

    transistor C639

    Abstract: transistor c63916 c63916 bc639 equivalent transistor C63910 free download transistor data sheet c63910 all transistor data sheet c639 transistor equivalent table
    Text: BC639; BCP56; BCX56 80 V, 1 A NPN medium power transistor series Rev. 07 — 8 March 2005 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1: Product overview Type number [1] Package PNP complement Philips


    Original     		PDF BC639; BCP56; BCX56 BC639 SC-43A* BC640 BCP56 OT223 SC-73 BCP53 transistor C639 transistor c63916 c63916 bc639 equivalent transistor C63910 free download transistor data sheet c63910 all transistor data sheet c639 transistor equivalent table

    BM sot223 marking code

    Abstract: No abstract text available
    Text: BCP56-16 LOW POWER NPN TRANSISTOR • ■ ■ ■ Ordering Code Marking BCP56-16 BCP5616 SILICON EPITAXIAL PLANAR NPN MEDIUM VOLTAGE TRANSISTOR SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPE IS BCP53-16


    Original     		PDF BCP56-16 BCP5616 OT-223 BCP53-16 OT-223 BM sot223 marking code

    transistor 45 f 122

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCP53T1 PNP Silicon Epitaxial Transistor Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for


    Original     		PDF OT-223 BCP56 BCP53T1 inch/1000 BCP53T3 inch/4000 BCP53T1 transistor 45 f 122

    transistor c63716

    Abstract: c637 transistor c63716 transistor C637 bc638 equivalent bc639 equivalent BC637 BC638 BCP52 BCX52
    Text: BC637; BCP55; BCX55 60 V, 1 A NPN medium power transistor series Rev. 06 — 18 February 2005 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1: Product overview Type number [1] Package PNP complement


    Original     		PDF BC637; BCP55; BCX55 BC637 SC-43A BC638 BCP55 OT223 SC-73 BCP52 transistor c63716 c637 transistor c63716 transistor C637 bc638 equivalent bc639 equivalent BC637 BC638 BCP52 BCX52

    TO-261AA

    Abstract: 500 watts amplifier motorola application note amplifier power power transistor audio amplifier 500 watts 1000 volt pnp transistor MARKING 93 SOT-223 NPN 1.5 AMPS POWER TRANSISTOR TO-261AA Package BCP53T1 BCP53T3
    Text: MOTOROLA Order this document by BCP53T1/D SEMICONDUCTOR TECHNICAL DATA BCP53T1 PNP Silicon Epitaxial Transistor Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for


    Original     		PDF BCP53T1/D BCP53T1 OT-223 BCP56 BCP53T1 inch/1000 BCP53T3 TO-261AA 500 watts amplifier motorola application note amplifier power power transistor audio amplifier 500 watts 1000 volt pnp transistor MARKING 93 SOT-223 NPN 1.5 AMPS POWER TRANSISTOR TO-261AA Package BCP53T3

    BCP56

    Abstract: BCP53T1 BCP53T3 ah sot223
    Text: MOTOROLA Order this document by BCP53T1/D SEMICONDUCTOR TECHNICAL DATA BCP53T1 PNP Silicon Epitaxial Transistor Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for


    Original     		PDF BCP53T1/D BCP53T1 OT-223 BCP56 BCP53T1 inch/1000 BCP53T3 BCP53T1/D* BCP56 ah sot223

    Untitled

    Abstract: No abstract text available
    Text: BCP5616Q 80V NPN MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Medium Power Switching or Amplification Applications 


    Original     		PDF BCP5616Q OT223 500mV BCP5316Q DS36981

    BCP5616

    Abstract: No abstract text available
    Text: Not Recommended for New Design Alternative is BCP56 & BCP5616 DCP56/-16 NPN SURFACE MOUNT TRANSISTOR Features • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available DCP53 Ideally Suited for Automated Assembly Processes


    Original     		PDF BCP56 BCP5616 DCP56/-16 DCP53) OT-223 OT-223 J-STD-020C MIL-STD-202, DS30796 BCP5616

    TRANSISTOR bH-16

    Abstract: BH-16 transistor BCP53T1 BH bh16 transistor bh-16 BH 16 BCP56T1G BCP56T3G BH-16 SOT marking BH SOT-223
    Text: BCP56T1 Series NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features


    Original     		PDF BCP56T1 OT-223 OT-223 inch/1000 BCP56T3 inch/4000 BCP53T1 BCP56T1/D TRANSISTOR bH-16 BH-16 transistor BCP53T1 BH bh16 transistor bh-16 BH 16 BCP56T1G BCP56T3G BH-16 SOT marking BH SOT-223

    NSVBCP56

    Abstract: No abstract text available
    Text: BCP56 Series NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features


    Original     		PDF BCP56 BCP56T1G inch/1000 BCP56T3G inch/4000 BCP53T1G BCP56T1/D NSVBCP56

    Untitled

    Abstract: No abstract text available
    Text: BCP56 Series NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features


    Original     		PDF BCP56 BCP56T1G inch/1000 BCP56T3G inch/4000 BCP53T1G BCP56T1/D

    TRANSISTOR bH-16

    Abstract: BH-16 transistor marking BH marking BH SOT-223 BCP53T1 BH BH-16 BH-16 SOT onsemi SOT-223 16T1 BCP53T1
    Text: BCP56T1 Series Preferred Devices NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.


    Original     		PDF BCP56T1 OT-223 OT-223 inch/1000 BCP56T3 inch/4000 BCP56T1/D TRANSISTOR bH-16 BH-16 transistor marking BH marking BH SOT-223 BCP53T1 BH BH-16 BH-16 SOT onsemi SOT-223 16T1 BCP53T1

    Untitled

    Abstract: No abstract text available
    Text: BCP56 Series, SBCP56 Series NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications.


    Original     		PDF BCP56 SBCP56 BCP56T1 inch/1000 BCP56T3 inch/4000 BCP53T1 BCP56T1/D

    BCP56-16T1 equivalent

    Abstract: BL SOT223 SC 0715 BL
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCP56T1 SERIES NPN Silicon Epitaxial Transistor Motorola Preferred Device These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for


    Original     		PDF OT-223 BCP56T1 inch/1000 BCP56T3 inch/4000 BCP53T1 BCP56-16T1 equivalent BL SOT223 SC 0715 BL

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCP53T1 PNP Silicon Epitaxial Transistor Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for


    OCR Scan     		PDF BCP53T1 OT-223 BCP56 BCP53T1 inch/1000

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCP53T1 PNP Silicon E pitaxial Transistor Motorol« Pr*f*rr*d D*vlca This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed


    OCR Scan     		PDF OT-223 BCP56 BCP53T1 BCP53T1 inch/1000 BCP53T3 inch/4000

    dlc10

    Abstract: RF NPN POWER TRANSISTOR 3 GHZ 200 watts package 20223 si1206 r410a
    Text: ERICSSON ^ PTB 20151 45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor Description The 20151 is a class AB, NPN common emitter HF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended


    OCR Scan     		PDF ATC-100 G-200 BCP56 dlc10 RF NPN POWER TRANSISTOR 3 GHZ 200 watts package 20223 si1206 r410a

    L450A

    Abstract: NPN transistor 5 watts Ericsson RF POWER TRANSISTOR
    Text: ERICSSON ^ PTE 20231 * 18 Watts, 2.1-2.2 GHz Cellular Radio RF Power Transistor Description The 20231 isaclassA/AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Bated at 18 watts minimum output power in class AB and 8 watts minimum output power


    OCR Scan     		PDF G-200. BCP56 L450A NPN transistor 5 watts Ericsson RF POWER TRANSISTOR

    RF NPN POWER TRANSISTOR C 10-12 GHZ

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20245 35 Watts, 2.1-2.2 GHz PCN/PCS Power Transistor Description The 20245 is a class AB, NPN com mon em itter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz frequency band. Rated at 35 watts minim um output power for PEP applications, it is


    OCR Scan     		PDF ATC-100 G-200 BCP56 RF NPN POWER TRANSISTOR C 10-12 GHZ

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20170 30 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor Description The 20170 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP


    OCR Scan     		PDF Curre195 G-200, BCP56 BAV99

    transistor CG sot-223

    Abstract: ah sot223
    Text: MOTOROLA Order this document by BCP53T1/D SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor BCP53T1 M o to ro la P re ferre d D e vic e This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for


    OCR Scan     		PDF BCP53T1/D OT-223 BCP56 BCP53T1 BCP53T1 inch/1000 BCP53T3 transistor CG sot-223 ah sot223