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    TRANSISTOR BC640 Search Results

    TRANSISTOR BC640 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BC640 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    bc640

    Abstract: transistor bC640 BC640BU BC639 BC640TA BC640TAR BC640TF BC640TFR transistor c 458 bc640 pnp
    Text: BC640 PNP Epitaxial Silicon Transistor BC640 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Complement to BC639 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a Symbol = 25°C unless otherwise noted Parameter


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    BC640 BC640 BC639 transistor bC640 BC640BU BC639 BC640TA BC640TAR BC640TF BC640TFR transistor c 458 bc640 pnp PDF

    TRANSISTORS BJT bc548

    Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
    Text: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002


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    OT-623F OT-323 OT-23 OT-89 OT-223 O-92S O-226AE O-92L TRANSISTORS BJT bc548 jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302 PDF

    transistor C639

    Abstract: transistor c63916 c63916 bc639 equivalent transistor C63910 free download transistor data sheet c63910 all transistor data sheet c639 transistor equivalent table
    Text: BC639; BCP56; BCX56 80 V, 1 A NPN medium power transistor series Rev. 07 — 8 March 2005 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1: Product overview Type number [1] Package PNP complement Philips


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    BC639; BCP56; BCX56 BC639 SC-43A* BC640 BCP56 OT223 SC-73 BCP53 transistor C639 transistor c63916 c63916 bc639 equivalent transistor C63910 free download transistor data sheet c63910 all transistor data sheet c639 transistor equivalent table PDF

    BC640

    Abstract: BC635
    Text: BC635 & BC640 General Purpose Transistor Features: • High performance, low frequency devices. • NPN/PNP Silicon Planar Epitaxial Transistors. • Driver Stages of Audio Amplifier Application. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33


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    BC635 BC640 BC640 BC635 PDF

    BC640

    Abstract: bc636 BC638 transistor bC636 BC636-10 BC636-16 BC638-16 BC640-16 bc638 transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC636,BC638,BC640 TRANSISTOR PNP TO-92 FEATURES High current transistors 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 2. COLLECTOR Symbol VCBO VCEO Parameter


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    BC636 BC638 BC640 BC636 BC638 150mA BC640 transistor bC636 BC636-10 BC636-16 BC638-16 BC640-16 bc638 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC636,BC638,BC640 TRANSISTOR PNP TO-92 FEATURES High current transistors 1. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2. COLLECTOR Symbol VCBO VCEO Parameter


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    BC636 BC638 BC640 BC636 BC638 150mA PDF

    BC640

    Abstract: bc636 bc638 bc636 transistor bc640 pnp bc640 transistor Bc638 transistor PNP
    Text: BC636/BC638/BC640 Transistor PNP TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features — High current transistors MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter Collector-Base Voltage Collector-Emitter Voltage Value Units -45 BC636


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    BC636/BC638/BC640 BC636 BC638 BC640 bc636 transistor bc640 pnp bc640 transistor Bc638 transistor PNP PDF

    c64016

    Abstract: transistor c64016 transistor c640 npn bc640 bcp53 bcx53 AH MARKING SOT223 transistor C640 to92 transistor C640 CBC640 c640 transistor ah sot223
    Text: BC640; BCP53; BCX53 80 V, 1 A PNP medium power transistors Rev. 07 — 27 June 2007 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1. Product overview Type number[1] Package NPN complement NXP JEITA


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    BC640; BCP53; BCX53 BC640 SC-43A BC639 BCP53 OT223 SC-73 BCP56 c64016 transistor c64016 transistor c640 npn bc640 bcp53 bcx53 AH MARKING SOT223 transistor C640 to92 transistor C640 CBC640 c640 transistor ah sot223 PDF

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTOR BC640-16 BPL TO-92 BCE Driver Stages of Audio Amplifier Application.


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    BC640-16 C-120 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC640 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM: 0.83 W (Tamb=25℃) 2. COLLECTOR Collector current -1 A ICM: Collector-base voltage -100 V V(BR)CBO:


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    BC640 150mA 500mA, -50mA -500mA PDF

    C64016

    Abstract: transistor c64016 transistor C640 to92 c640 pnp bc640 bcp53 bcx53 transistor c640 pnp bc640 transistor c640 npn
    Text: BC640; BCP53; BCX53 80 V, 1 A PNP medium power transistors Rev. 06 — 13 March 2006 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1: Product overview Type number [1] Package NPN complement Philips


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    BC640; BCP53; BCX53 BC640 BCP53 SC-43A SC-73 SC-62 O-243 C64016 transistor c64016 transistor C640 to92 c640 pnp bc640 bcp53 bcx53 transistor c640 pnp bc640 transistor c640 npn PDF

    AH MARKING SOT223

    Abstract: CBC640 BCP53 transistor c640 npn BC639 BC640 BCP53-10 BCP56 BCX53 BCX56
    Text: BC640; BCP53; BCX53 80 V, 1 A PNP medium power transistors Rev. 08 — 22 February 2008 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1. Product overview Type number[1] Package NPN complement NXP JEITA


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    BC640; BCP53; BCX53 BC640 SC-43A BC639 BCP53 OT223 SC-73 BCP56 AH MARKING SOT223 CBC640 BCP53 transistor c640 npn BC639 BCP53-10 BCP56 BCX53 BCX56 PDF

    SMD Marking Code 43a

    Abstract: BC640 SPICE model transistor C640 to92 marking code DG SMD Transistor TRANSISTOR SMD MARKING CODE 723 BC640 smd A2 SMD CODE MARKING SOT89 TRANSISTOR SMD MARKING CODE 9339 BC640,116 TRANSISTOR SMD MARKING CODE LF
    Text: BC640; BCP53; BCX53 80 V, 1 A PNP medium power transistors Rev. 08 — 22 February 2008 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1. Product overview Type number[1] Package NPN complement NXP JEITA


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    BC640; BCP53; BCX53 BC640 BCP53 SC-43A SC-73 SC-62 O-243 SMD Marking Code 43a BC640 SPICE model transistor C640 to92 marking code DG SMD Transistor TRANSISTOR SMD MARKING CODE 723 BC640 smd A2 SMD CODE MARKING SOT89 TRANSISTOR SMD MARKING CODE 9339 BC640,116 TRANSISTOR SMD MARKING CODE LF PDF

    BC640-16

    Abstract: BC640
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTOR BC640-16 BPL TO-92 BCE Driver Stages of Audio Amplifier Application. ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C )


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    BC640-16 C-120 BC640-16 BC640 PDF

    transistor BC640

    Abstract: transistorbc640 BC640
    Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BC640 ISSUE 1 – SEPT 93 FEATURES * 1 Amp continuous current * Ptot= 800 mW E C B TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -80 V Emitter-Base Voltage


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    BC640 -10mA, -500mA, -50mA* -500mA -150mA, -50mA, 100MHz transistor BC640 transistorbc640 BC640 PDF

    BC640

    Abstract: No abstract text available
    Text: BC640 BC640 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM: 0.83 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: -1 A Collector-base voltage -100 V V(BR)CBO: Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55℃ to +150℃


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    BC640 150mA 500mA, -50mA -500mA BC640 PDF

    639 TRANSISTOR PNP

    Abstract: bc636 BC640 Diode bc640 BC638 638 transistor transistor BC637 complement
    Text: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/637/639 TO-92  ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Collector Emitter Voltage at RBE=1Kohm Collector Emitter Voltage Collector Emitter Voltage


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    BC636/638/640 BC635/637/639 BC636 BC638 BC640 639 TRANSISTOR PNP bc636 BC640 Diode bc640 BC638 638 transistor transistor BC637 complement PDF

    BC635

    Abstract: BC636 BC638 BC640
    Text: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/637/639 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector Emitter Voltage at RBE=1Kohm Collector Emitter Voltage Collector Emitter Voltage


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    BC636/638/640 BC635/637/639 BC636 BC638 BC640 BC635 BC636 BC638 BC640 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BC640 IS S U E 1 - S E P T 93_ FEATU RES * 1 A m p continuous current * Ptot= 800 mW ABSOLUTE MAXIMUM RATINGS. SYM BOL PARAMETER Collector-Base Voltage VCBO VALUE UNIT -80 V V Collector-Emitter Voltage


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    BC640 -100nA, -10hA -50mA* -500mA -150mA, -500m -50mA, 100MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BC640 ISSUE 1 - SEPT 93_ FEAT U RES * 1 A m p continuous current * Ptot= 800 mW ABSOLUTE MAXIMUM RATINGS. SYM BO L PA R A M ET E R V ALU E UNIT V V V CBO -80 Collector-Em itter Voltage V CEO


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    BC640 001G35S PDF

    Bc636

    Abstract: BC640 639 TRANSISTOR PNP BC638 pnp bc636 transistor
    Text: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • C o m p le m e n t to BC635/637/639 ABSOLUTE MAXIMUM RATINGS Ta= 25°C 1 Sym bol Characteristic C o llecto r Emitter Voltage: BC636 a t R BE = 1Kohm : BC638 V cE R : BC640


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    BC636/638/640 BC635/637/639 BC636 BC638 BC640 BC640 639 TRANSISTOR PNP BC638 pnp bc636 transistor PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF

    Untitled

    Abstract: No abstract text available
    Text: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS T O -9 2 • Complement to BC635/637/639 ABSOLUTE MAXIMUM RATINGS T.=25°C Characteristic C ollector Emitter Voltage: at R B E = 1Kohm : : Collector Emitter Voltage: : :


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    BC636/638/640 BC635/637/639 BC636 BC638 BC640 PDF