bc639
Abstract: BC639 data 24825 BC635 application note BC635 BC635-16 BC636 BC637 BC637-16 BC639-10
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors Product specification Supersedes data of 1999 Apr 23 2001 Oct 10 Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639
|
Original
|
PDF
|
M3D186
BC635;
BC637;
BC639
BC636,
BC638
BC640.
bc639
BC639 data
24825
BC635 application note
BC635
BC635-16
BC636
BC637
BC637-16
BC639-10
|
BC635 TRANSISTOR E C B
Abstract: BC635 BC635-10 BC636 BC637 BC637-10 BC638 BC639 BC640 BC635 application note
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 12 Philips Semiconductors Product specification
|
Original
|
PDF
|
M3D186
BC635;
BC637;
BC639
BC636,
BC638
BC640.
BC635 TRANSISTOR E C B
BC635
BC635-10
BC636
BC637
BC637-10
BC639
BC640
BC635 application note
|
transistor c63716
Abstract: c637 transistor c63716 transistor C637 bc638 equivalent bc639 equivalent BC637 BC638 BCP52 BCX52
Text: BC637; BCP55; BCX55 60 V, 1 A NPN medium power transistor series Rev. 06 — 18 February 2005 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1: Product overview Type number [1] Package PNP complement
|
Original
|
PDF
|
BC637;
BCP55;
BCX55
BC637
SC-43A
BC638
BCP55
OT223
SC-73
BCP52
transistor c63716
c637 transistor
c63716
transistor C637
bc638 equivalent
bc639 equivalent
BC637
BC638
BCP52
BCX52
|
BC640
Abstract: BC635 BC635-16 BC636 BC637 BC637-16 BC638 BC639 BC639-10 BC639-16
Text: DISCRETE SEMICONDUCTORS DATA SHEET Product specification Supersedes data of 1997 Mar 12 1999 Apr 23 Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V).
|
Original
|
PDF
|
BC635;
BC637;
BC639
BC636,
BC638
BC640.
MAM259
SCA63
115002/00/03/pp8
BC640
BC635
BC635-16
BC636
BC637
BC637-16
BC639
BC639-10
BC639-16
|
transistor bC640 OF CDIL
Abstract: BC639 bc639 npn BC635 TRANSISTOR E C B BC635 BC636 BC637 BC638 BC640 NPN, PNP for 500ma, 30v
Text: Continental Device India Limited IS/ISO 9002 Lic# QSC/L-000019.3 An IS/ISO 9002 and IECQ Certified Manufacturer SILICON PLANAR EPITAXIAL TRANSISTORS BC635 BC637 BC639 NPN BC636 BC638 BC640 PNP TO-92 Plastic Package E CB Driver Stages of Audio Amplifiers Applications
|
Original
|
PDF
|
QSC/L-000019
BC635
BC637
BC639
BC636
BC638
BC640
BC636,
BC638,
transistor bC640 OF CDIL
BC639
bc639 npn
BC635 TRANSISTOR E C B
BC635
BC636
BC637
BC638
BC640
NPN, PNP for 500ma, 30v
|
BC637
Abstract: BC639 BC635 BC635-16 BC636 BC637-16 BC638 BC639-10 BC640 bc639 philips
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors Product specification Supersedes data of 1997 Mar 12 1999 Apr 23 Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639
|
Original
|
PDF
|
M3D186
BC635;
BC637;
BC639
BC636,
BC638
BC640.
BC637
BC639
BC635
BC635-16
BC636
BC637-16
BC639-10
BC640
bc639 philips
|
NPN transistor ECB TO-92
Abstract: Bc637 BC635 ECB transistor C 639 W transistor BC637 complement
Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
|
Original
|
PDF
|
BC635/637/639
BC636/638/640
BC635
BC637
BC639
NPN transistor ECB TO-92
Bc637
BC635 ECB
transistor C 639 W
transistor BC637 complement
|
bc639
Abstract: 2bc639 fairchild date code transistor BC637 complement applications of Transistor BC639 bc639 fairchild
Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
|
Original
|
PDF
|
BC635/637/639
BC636/638/640
BC635
BC637
BC639
2bc639
fairchild date code
transistor BC637 complement
applications of Transistor BC639
bc639 fairchild
|
bc736
Abstract: transistor C 639 W bc639 BC635 BC637
Text: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector Emitter Voltage at RBE=1Kohm Collector Emitter Voltage Collector Emitter Voltage
|
Original
|
PDF
|
BC635/637/639
BC635/638/640
BC635
BC637
BC639
bc736
transistor C 639 W
bc639
BC635
BC637
|
bc635
Abstract: transistor C 639 W
Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
|
Original
|
PDF
|
BC635/637/639
BC636/638/640
BC635
BC637
BC639
bc635
transistor C 639 W
|
Untitled
Abstract: No abstract text available
Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
|
Original
|
PDF
|
BC635/637/639
BC636/638/640
BC635
BC637
BC639
|
BC635
Abstract: bc639 BC637
Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
|
Original
|
PDF
|
BC635/637/639
BC636/638/640
BC635
BC637
BC639
BC635
bc639
BC637
|
transistor C 639 W
Abstract: No abstract text available
Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
|
Original
|
PDF
|
BC635/637/639
BC636/638/640
BC635
BC637
BC639
transistor C 639 W
|
bc736
Abstract: BC635 BC637 BC639
Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
|
Original
|
PDF
|
BC635/637/639
BC636/638/640
BC635
BC637
BC639
bc736
BC635
BC637
BC639
|
|
bc736
Abstract: bc635 BC637 BC639
Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
|
Original
|
PDF
|
BC635/637/639
BC636/638/640
BC635
BC637
BC639
bc736
bc635
BC637
BC639
|
Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E CB
|
Original
|
PDF
|
BC635,
BC636,
640Rev
030106E
C-120
|
Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E CB
|
Original
|
PDF
|
BC635,
BC636,
640Rev
180712E
C-120
|
NPN Silicon Epitaxial Planar Transistor to92
Abstract: BC639-BC640 Transistor BC637 or BC639 BC635 BC636 BC637 BC638 BC639 BC640 transistor C 639 W
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E CB
|
Original
|
PDF
|
BC635,
BC636,
640Rev
030106E
C-120
NPN Silicon Epitaxial Planar Transistor to92
BC639-BC640
Transistor BC637 or BC639
BC635
BC636
BC637
BC638
BC639
BC640
transistor C 639 W
|
639 TRANSISTOR PNP
Abstract: 638 transistor bc636 npn transistor bc640 transistor bC640 OF CDIL transistor C 639 W BC639-BC640 NPN transistor 500ma TO-92 ts 4141 TRANSISTOR BC635
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E CB
|
Original
|
PDF
|
BC635,
BC636,
C-120
BC640Rev
030106E
639 TRANSISTOR PNP
638 transistor
bc636 npn transistor
bc640
transistor bC640 OF CDIL
transistor C 639 W
BC639-BC640
NPN transistor 500ma TO-92
ts 4141 TRANSISTOR
BC635
|
BC635
Abstract: BC636 BC638 BC640
Text: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/637/639 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector Emitter Voltage at RBE=1Kohm Collector Emitter Voltage Collector Emitter Voltage
|
Original
|
PDF
|
BC636/638/640
BC635/637/639
BC636
BC638
BC640
BC635
BC636
BC638
BC640
|
BC640
Abstract: BC636 BC635 BC636-10 BC636-16 BC637 BC638 BC639 SC-43A
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors Product specification Supersedes data of 2001 Oct 10 2004 Oct 11 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640
|
Original
|
PDF
|
M3D186
BC636;
BC638;
BC640
BC635,
BC637
BC639.
BC640
BC636
BC635
BC636-10
BC636-16
BC638
BC639
SC-43A
|
24825
Abstract: BC639 BC635 BC636 BC636-10 BC636-16 BC637 BC638 BC638-16 BC640
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors Product specification Supersedes data of 1999 Apr 23 2001 Oct 10 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640
|
Original
|
PDF
|
M3D186
BC636;
BC638;
BC640
BC635,
BC637
BC639.
24825
BC639
BC635
BC636
BC636-10
BC636-16
BC638
BC638-16
BC640
|
bc736
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR BC635/637/639 SWITCHING AND AMPLIFIER APPLICATIONS T O -92 • C om plem ent to BC635/638/640 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector Em itter V oltage at R be =1 Kohm : BC635 : BC637 : BC639
|
OCR Scan
|
PDF
|
BC635/637/639
BC635/638/640
BC635
BC637
BC639
bc736
|
Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON TRANSISTOR BC636/638/640 SWITCHING AND AMPLIFIER APPLICATIONS • C om plem ent to BC635/637/639 TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollector Em itter Voltage at R be =1 Kohm C ollector Em itter Voltage C ollector Em itter Voltage
|
OCR Scan
|
PDF
|
BC636/638/640
BC635/637/639
BC636
BC638
BC640
|