2SA1960
Abstract: 2SC5225 Hitachi DSA00396
Text: 2SC5225 Silicon NPN Epitaxial Transistor ADE-208-393 1st. Edition Application • • • • Wide band video output amplifier for color CRT monitor. High frequency high voltage amplifier. High speed power switching. Complementary pair with 2SA1960. Features
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2SC5225
ADE-208-393
2SA1960.
2SA1960
2SC5225
Hitachi DSA00396
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Hitachi 2SA
Abstract: Hitachi DSA002756
Text: 2SC5225 Silicon NPN Epitaxial Transistor ADE-208-393 1st. Edition Application • • • • Wide band video output amplifier for color CRT monitor. High frequency high voltage amplifier. High speed power switching. Complementary pair with 2SA1960. Features
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2SC5225
ADE-208-393
2SA1960.
Hitachi 2SA
Hitachi DSA002756
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MRF1057T1
Abstract: AN1675 RK73H2A MDC5001 MRF1027T1 MRF1047T1 2.5 ghz lna transistor motorola rf spice 0/MRF1057
Text: Order this document by AN1675/D AN1675 A Low Noise Amplifier with High IP3 for the 900 MHz Band Using the MRF1057T1 Low Noise Transistor Prepared by Raul Pineiro INTRODUCTION This Application Note describes the performance of the Motorola MRF1057T1 low noise bipolar transistor in a LNA
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AN1675/D
AN1675
MRF1057T1
MRF1027T1
MRF1047T1
AN1675
RK73H2A
MDC5001
2.5 ghz lna transistor
motorola rf spice
0/MRF1057
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2SA1960
Abstract: 2SC5225 2SA19 Hitachi DSA00125
Text: 2SA1960 Silicon NPN Epitaxial Transistor Application TO–92 • Wide band video output amplifier for color CRT monitor. • High frequency high voltage amplifier. • High speed power switching. • Compelementary pair with 2SC5225. Features • High voltage large current operation.
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2SA1960
2SC5225.
2SA1960
2SC5225
2SA19
Hitachi DSA00125
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2SA1960
Abstract: 2SC5225 Hitachi DSA0014
Text: 2SC5225 Silicon NPN Epitaxial Transistor Application TO–92 • Wide band video output amplifier for color CRT monitor. • High frequency high voltage amplifier. • High speed power switching. • Compelementary pair with 2SA1960. Features • High voltage large current operation.
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2SC5225
2SA1960.
2SA1960
2SC5225
Hitachi DSA0014
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2SA1960
Abstract: 2SC5225 2SC522 2SA19 Hitachi DSA00118
Text: ADE–208–392 Z 2SA1960 Silicon NPN Epitaxial Transistor 1st. Edition Sep. 1995 Application TO–92 • Wide band video output amplifier for color CRT monitor. • High frequency high voltage amplifier. • High speed power switching. • Compelementary pair with 2SC5225.
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2SA1960
2SC5225.
2SA1960
2SC5225
2SC522
2SA19
Hitachi DSA00118
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2SC5225
Abstract: DSA003642
Text: 2SC5225 Silicon NPN Epitaxial Transistor ADE-208-393A Z 2nd. Edition Mar. 2001 Application • Wide band video output amplifier for color CRT monitor. • High frequency high voltage amplifier. • High speed power switching. Features • High voltage large current operation.
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2SC5225
ADE-208-393A
2SC5225
DSA003642
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MS-T520D
Abstract: No abstract text available
Text: Ref. No. - PT - MS-T520D MOK SAN ELECTRONIC CO., LTD. Q.A CHECKED APPROVED 1. General Description The MS-T520D is high sensitivity NPN silicon photo transistor mounted in a lensed, Black color epoxy looking package. 2. Feature 1 High sensitivity. 2) Wide Band of Collector Current.
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MS-T520D
MS-T520D
MS-I300
MS-I500
1000Lux
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marking WB1 sot-23
Abstract: marking WB2 sot-23 transistor WB1
Text: Document Number: MRF9080 Rev. 7, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9080LSR3 Designed for GSM 900 MHz frequency band, the high gain and broadband performance of this device make it ideal for large-signal, common-source
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MRF9080
MRF9080LSR3
marking WB1 sot-23
marking WB2 sot-23
transistor WB1
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marking WB1 sot-23
Abstract: marking WB2 sot-23 ATC100B220GT500XT MRF9080 MRF9080LR3 T491D106M035AT
Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9080LR3 LIFETIME BUY Designed for GSM 900 MHz frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common - source
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MRF9080LR3
MRF9080
marking WB1 sot-23
marking WB2 sot-23
ATC100B220GT500XT
MRF9080
MRF9080LR3
T491D106M035AT
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NI-600
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6522-70 Rev. 9, 10/2008 RF Power Field Effect Transistor MRF6522-70R3 Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large-signal, common source
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MRF6522--70
MRF6522-70R3
MRF6522--70
NI-600
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LP2951
Abstract: BC847 921 smd transistor
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF6522 - 70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522−70R3 N - Channel Enhancement - Mode Lateral MOSFET Freescale Semiconductor, Inc. Designed for GSM 900 frequency band, the high gain and broadband
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MRF6522
MRF6522-70R3
MRF6522
LP2951
BC847
921 smd transistor
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motorola rf spice
Abstract: J2/MRF1057TI AN1675 MDC5001 MRF1027T1 MRF1047T1 MRF1057T1 RK73H2A dbm-166 mixer MRF1057
Text: Freescale Semiconductor, Inc. Order this document by AN1675/D AN1675 A Low Noise Amplifier with High IP3 for the 900 MHz Band Using the MRF1057T1 Low Noise Transistor Prepared by Raul Pineiro Freescale Semiconductor, Inc. INTRODUCTION This Application Note describes the performance of the
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AN1675/D
AN1675
MRF1057T1
MRF1027T1
MRF1047T1
motorola rf spice
J2/MRF1057TI
AN1675
MDC5001
RK73H2A
dbm-166 mixer
MRF1057
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Untitled
Abstract: No abstract text available
Text: MRF6522 - 70 Rev. 7, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6522-70R3 Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source
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MRF6522
MRF6522-70R3
MRF6522-
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Untitled
Abstract: No abstract text available
Text: Document Number: MRF9080 Rev. 8, 10/2008 Freescale Semiconductor Technical Data LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9080LR3 LIFETIME BUY Designed for GSM 900 MHz frequency band, the high gain and broadband
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MRF9080
MRF9080LR3
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smd transistor marking j1
Abstract: No abstract text available
Text: MRF6522 - 70 Rev. 7, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6522-70R3 Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source
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MRF6522
MRF6522-70R3
MRF6522-
smd transistor marking j1
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dbm-166 mixer
Abstract: AN1675 MRF1057T1 MRF1057 MDC5001 MRF1027T1 MRF1047T1 RK73H2A mrf1027
Text: MOTOROLA ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 SEMICONDUCTOR APPLICATION NOTE Order this document by AN1675/D AN1675 A Low Noise Amplifier with High IP3 for the 900 MHz Band Using the MRF1057T1 Low Noise Transistor Prepared by: Raul Pineiro This Application Note describes the performance of the
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AN1675/D
AN1675
MRF1057T1
MRF1027T1
MRF1047T1
dbm-166 mixer
AN1675
MRF1057
MDC5001
RK73H2A
mrf1027
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6522 - 70 Rev. 8, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6522-70R3 Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source
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MRF6522
MRF6522-70R3
MRF6522-
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BC847
Abstract: LP2951 MRF6522-70 MRF6522-70R3
Text: Freescale Semiconductor Technical Data Document Number: MRF6522 - 70 Rev. 8, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6522-70R3 Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source
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MRF6522
MRF6522-70R3
MRF6522-70
BC847
LP2951
MRF6522-70
MRF6522-70R3
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SANYO 16 AMP 120V NPN TRANSISTOR
Abstract: C3781 transistor 2sC3781 2SC3781 005045 m475 2SA1475 SC46 T0220AB
Text: 2527A Ordering num ber : EN 2SA1475/2SC3781 PNP/NPN Epitaxial Planar Silicon Transistor SAMTO Ultrahigh-Definition CRT Display Video Output Applications i Applications . Video output . Color TV chroma output . Wide-band amp Features High f -\p ' fm
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2SA1475/2SC3781
500MHz)
2SA1475
2SC3781
71ci707b
D0E04bD
2SAK75/2SC3781
D02D4bl
SANYO 16 AMP 120V NPN TRANSISTOR
C3781
transistor 2sC3781
005045
m475
2SA1475
SC46
T0220AB
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2SA1474
Abstract: A147 SC46 T0220AB
Text: Ordering num ber: EN 2526 2SA1474/2SC3780 PNP/NPN Epitaxial Planar Silicon Transistor SANYO Ultrahigh-Definition CRT Display _Video Output Applications i Applications . Video output . Color TV chroma output . Wide-band amp Features . High fT fT typ=800MHz
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2SA1474/2SC3780
800MHz)
2SA1474
A147
SC46
T0220AB
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2SC3782
Abstract: transistor 2sa1 2528A 2SA1476 SC46 T0220AB transistor 2sc3782
Text: Ordering number: EN 2528A 2SA1476/2SC3782 i PNP/NPN Epitaxial Planar Silicon Transistor SAm rol Ultrahigh-Definition CRT Display Video Output Applications Applications . Video output . Color TV chroma output . Wide-band amp Features . High fT fT typ=400MHz
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2SA1476/2SC3782
400MHz)
VCEOi200V)
2SA1476
476/2SC
7cH707Li
2SC3782
transistor 2sa1
2528A
SC46
T0220AB
transistor 2sc3782
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Untitled
Abstract: No abstract text available
Text: H ITACH I 2SC5225-Silicon NPN Epitaxial Transistor Application T O -9 2 • Wide band video output amplifier for color CRT monitor. • High frequency high voltage amplifier. • High speed power switching. • Compelementary pair with 2SA 1960. Features
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2SC5225-------Silicon
2SC5225
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transistor 2SA
Abstract: No abstract text available
Text: H ITACH I 2SA1960-Silicon NPN Epitaxial Transistor Application T O -9 2 • Wide band video output amplifier for color CRT monitor. • High frequency high voltage amplifier. • High speed power switching. • Compelementary pair with 2SC5225. Features
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2SA1960-------Silicon
2SC5225.
2SA1960
transistor 2SA
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