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    TRANSISTOR BA RN Search Results

    TRANSISTOR BA RN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BA RN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: eSe-rnl-donauctoi LPioaueti, One. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TYPE 2N6128 N-P-N SILICON POWER TRANSISTOR HIGH-FREQUENCY, HIGH-POWER TRANSISTOR WITH COMPUTER-DESIGNED ISOTHERMAL GEOMETRY


    Original     		PDF 2N6128 2IM6127

    2N6439

    Abstract: BH Rf transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 60 W — 225-400 MHz CO N TR O LLE D " Q " B R O A D BA N D RF POWER TRANSISTOR NPN SILICO N RF POWER TRANSISTOR . , . designed p rim a rily fo r w id e b a n d large-signal o u tp u t a m p lifie r stages in the 2 2 5 -4 0 0 M H z fre q u e n c y range.


    OCR Scan     		PDF

    Motorola 3-351

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA B U S5 0 SW IT C H M O D E Series N PN Silicon Power TVansistors The BUS50 transistor is designed for low voltage, high-speed, power switching in in d u ctiv e c irc u its w h e re fail tim e Is c ritic a l. It is p a rtic u la rly su ite d fo r ba ttery


    OCR Scan     		PDF BUS50 1Q7A-05 O-204AE -125V) Motorola 3-351

    220v to 3.7v power supply circuit

    Abstract: SC173 DS-02-V
    Text: PF400-07 Switching Regulator •DESCRIPTION #S tep-up Switching Regulator 1.5V— 2.0, 2.2, 2.35, 2.4, 2.7, 2.8, 3.0, 3.1, 3.5, 3.7, 4.2 ,5.0V # L o w Operating Voltage (Min 0.9V) •V o lta g e Detecting function, Battery Back-up function (SC17363/7632/7635/7636/7639M/C)


    OCR Scan     		PDF PF400-07 SC17363/7632/7635/7636/7639M/C) SCI7630M/C SCI7631M/C SCI7633M/Cba, SCI7635M/Cba SCI7636M/CBa 32kHz, 220v to 3.7v power supply circuit SC173 DS-02-V

    Lx470

    Abstract: ba rn
    Text: NJM2352 LOW POWER SWITCHING REGULATOR • PACKAGE OUTLINE ■ GENERAL DESCRIPTION The NJM2352 is the industry's first monolithic low power switch­ ing regulators available in an 8-lead mini-DlP. and designed specifi­ cally for battery operated instruments. They each contain a 1.3V


    OCR Scan     		PDF NJM2352 200mA --10m Lx470 ba rn

    YC 2604

    Abstract: toshiba Yb YC+2604
    Text: TOSHIBA RN2601 ~RN2606 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2601, RN2602, RN2603, RN2604, RN2605, RN2606 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. Including Two Devices in SM6 (Super Mini Type with 6 leads)


    OCR Scan     		PDF RN2601 RN2606 RN2601, RN2602, RN2603, RN2604, RN2605, RN1601 RN1606 YC 2604 toshiba Yb YC+2604

    transistor BC-108

    Abstract: dog 53 DIODE BZ TRANSISTOR BC 109 VEB Kombinat DIODE BZP DIODE BZp 6870 service-mitteilungen Stern Radio OA625
    Text: SERV IC E-M ITT EILU N G EN VEB IN DUSTRIEVERTRIEB RU ND FU NK UND FE RN SE H EN GSMi ra d io - television AUSGABE: 7/73 DATUM: Juni 1973 Neue Import - Geräte Kassetten-Tonbandgerät " M£ - 25 " Dae Gerät wird aus der VR Ungarn importiert und befindet sich ab


    OCR Scan     		PDF 68x200x235 53-cm-G III/18/379 transistor BC-108 dog 53 DIODE BZ TRANSISTOR BC 109 VEB Kombinat DIODE BZP DIODE BZp 6870 service-mitteilungen Stern Radio OA625

    Untitled

    Abstract: No abstract text available
    Text: Transistors Low Frequency Transistor 20V, 5A 2 SB 1386 / 2 SB 1412 / 2 SB 1326 / 2 SB 1436 • E x te rn a l dim ensions (Units: mm) •F e a tu re s 1) LOW VcE(sat). 2SB1412 2SB1386 VcE(sai) = -0 .3 5 V (Typ.) 2 ^2 6 .5 ± 0 .2 (|C/ | B = - 4 A / - 0 . 1 A )


    OCR Scan     		PDF 2SB1412 2SB1386 2SD2118 2SD2166. SC-62 3B1326/2SB1436

    6860F

    Abstract: No abstract text available
    Text: Motor driver ICs 3-phase motor driver BA6860FS/BA6862FS The BA6860FS and BA6862FS are 3-phase, full-wave, pseudo-linear motor drivers suited for driving movie cam era capstan motors that can be operated at low voltages. The IC s have a torque ripple cancellation circuit to reduce


    OCR Scan     		PDF BA6860FS/BA6862FS BA6860FS BA6862FS 6860F

    Untitled

    Abstract: No abstract text available
    Text: n r a LOW RIPPLE VOLTAGE REGULATOR WITH EXTERNAL TRANSISTOR o RN5RF SERIES OUTLINE The RN5RF Series are voltage regulator ICs which control external driver transistors with high ripple rejection, high accu­ racy output voltage, low supply current by CMOS process. Each of these voltage regulator ICs consists of a voltage refer­


    OCR Scan     		PDF 800mA. 7744b10

    BUK416-200AE

    Abstract: 200AE BUK416-200BE Transistor BO 63
    Text: blE T> N AMER P H I L I P S / DI SC R ET E • bb53T31 ÜQ3D4MS Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N -ch an nel e n h an cem en t m ode field-effect p o w er transistor in IS O T O P envelo pe. T h e device is intended fo r u s e in


    OCR Scan     		PDF BUK416-200AE/BE OT227B BUK416 -200AE -200BE bbS3131 D0B0411 BUK416-2QO0E BUK416-200AE 200AE BUK416-200BE Transistor BO 63

    qm15td-9b

    Abstract: QM15TD-9 transistor BA RW
    Text: MITSUBISHI TRANSISTOR MODULES QM 15TD-9B MEDIUM POWER SWITCHING USE INSULATED TYPE QMÎ5TD-9B 15A 500V 250 I i APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders


    OCR Scan     		PDF 15TD-9B QM15TD-9B qm15td-9b QM15TD-9 transistor BA RW

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM30HY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM30HY-2H APPLICATION Inverters, Servo drives, UPS, DC m otor controllers, NC equipm ent OUTLINE DRAWING & CIRCUIT DIAGRAM D im e n s io n s in m m C E Tab# 110, t= 0 .5 M 5,


    OCR Scan     		PDF QM30HY-2H

    Untitled

    Abstract: No abstract text available
    Text: UNCONTROLLED DOCUMENT REV, PART NUMBER REV. OCP-PCT4116/E-TR c E.C.N. A NUMBER AND REVISION COMMENTS E.C.N. #10BRDR. & DATE #10776. 6.16.01 B E.C.N. #10815. 12.6.01 C E.C.N. #11148. 5,16.07 TOP VIEW RECOMMENDED SOLDER PAD LAYOUT i r L 2.54 [ 0.100] 7 PLS.


    OCR Scan     		PDF OCP-PCT4116/E-TR 10BRDR.

    Untitled

    Abstract: No abstract text available
    Text: A 1/XIAI 19-, i2 1 ; R e v 0 ;9 / 9 6 Cost-Saving M u l t i c h e m i s t r y Battery-Charger System Description In its sim p le st a p p lic a tio n , the VIAX846A is a stand alone, current-lim ited float voltage source that charges Li Ion cells. It can also be paired up w ith a low -cost


    OCR Scan     		PDF MAX846A 16-Pin

    2SA675

    Abstract: t430 transistor t430 T591 PA33 ss-3r
    Text: SEC j Iïf/\f7 J '> y = ]> h Silicon Transistor 2SA675 P N P X f c f v T J U J K v U =i > h -7 > v * £ Si PNP Silicon Epitaxial Transistor Fluorescent Indicator Pannel Driver 2 SA 675 i, tîIIÊ fli: £ f i f z sE — Jl' F h ? ^121/PACKAGE DIMENSIONS T% Ë E ^ 'iS î ^ £


    OCR Scan     		PDF 2SA675 2SA675 t430 transistor t430 T591 PA33 ss-3r

    Untitled

    Abstract: No abstract text available
    Text: PowerTech BIG IDEAS IN • rn t BK! POWER’ 150 AMPERE TRANSISTOR PT-2523 PT-2524 FEATURES PT2S23 400V 450V . V,wo V.' l P T-S 5Ï4 . . -1501.' ‘J r- o . i= t t j ai , - 500V V, K- . I. U Po 'V 1 1 ! 0V . . IOGA 150A . . . S2SW ~ t ~ I.0O - 1


    OCR Scan     		PDF PT-2523 PT-2524 KPT2S23

    BA3126N

    Abstract: No abstract text available
    Text: Audio ICs 2-channel head switch for radio cassette recorders B A 3 1 2 6 F /B A 3 1 2 6 N The BA3126F and BA3126N are dual-channel tape head switching ICs designed for use in radio cassette players. These ICs are designed to withstand voltages of up to 120Vp-pMin., and can handle large-amplitude bias signals


    OCR Scan     		PDF BA3126F BA3126N 120Vp-pMin. 14-pin BA3126F, BA3126N. 100kHz) BA3126F/BA3126N

    RJM23520

    Abstract: A 671 transistor
    Text: LOW POWER SWITCHING REGULATOR NJM2352 T he NIM2352 is the industry’s first monolithic low pow er switching regulators available in an 8-lead m ini-D IP, and designed specifically for battery operated instrum ents. T hey each contain a 1.3V tem perature com pensated bandgap refer­


    OCR Scan     		PDF NJM2352 NIM2352 200mA 280ji NJM2352 RJM23520 A 671 transistor

    Untitled

    Abstract: No abstract text available
    Text: Optical disc ICs 4-channel BTL driver for CD players BA6898S / BA6898FP The BA6898S / BA6898FP ICs contain a 4-channel BTL d riv e r, 5V regulator which requires an externally connected PNP transistor , m ulti-purpose operational amplifier, and reset output for use with CD players. Also equipped with an


    OCR Scan     		PDF BA6898S BA6898FP BA6898FP BA6898S/

    kl2 t1 transistor

    Abstract: KYOCERA KBR
    Text: Ordering number: EN3653B _ CMOS LSI LC65102A, LC65104A 4-bit Single-chip Microprocessors :'S s. •Á V // / ^ / / / / .f A' '^ O - -iK \ ’V OVERVIEW / / 0 ' " A- The LC65102A and LC65104A are 4-bit, single-chip microprocessors that incorporate 2 Kbyte RO M and


    OCR Scan     		PDF EN3653B LC65102A, LC65104A LC65102A 14-bit kl2 t1 transistor KYOCERA KBR

    diodo 100a

    Abstract: Mitsubishi transistor
    Text: MITSUBISHI TRANSISTOR MODULES QM100TX1-H HIGH POWER SWITCHING USE INSULATED TYPE OM100TX1-H • lc • V ce x • hFE Collector current . 100A Collector-emitter voltage. 600V DC current gain. 80 • Insulated Type


    OCR Scan     		PDF QM100TX1-H OM100TX1-H E80276 E80271 diodo 100a Mitsubishi transistor

    Untitled

    Abstract: No abstract text available
    Text: DISC RETE S E M IC O N D U C TO R S [n]EE¥ BLS2731 -20 Microwave power transistor Preliminary specification Supersedes data of 1997 Nov 05 File under Discrete Semiconductors, SC19a Philips Semiconductors 1998 Mar 06 PHILIPS PHILIPS Philips S e m ico nd uctors


    OCR Scan     		PDF BLS2731 SC19a BLS2731-20 OT445C i25io8/oo/o3/P

    6N133

    Abstract: 8n139 74LSxx tr48 74hxx
    Text: EsQ HIGH GAIN SPLIT-DARLINGTON OPTOCOUPLERS t r im tc T in H s 6N138 6N139 The 6N138/9 single channel optocoupters contain a 700 nm GaAsP LED emitter which !s optically coupled to a high gain detector in a split Darlington configuration, providing extremely


    OCR Scan     		PDF 6N138 6N139 6N138/9 RS232C, 74LXX 74SXX 741SXX 74HXX MCC67Û 74LSXX 6N133 8n139 tr48 74hxx