2N6439
Abstract: BH Rf transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 60 W — 225-400 MHz CO N TR O LLE D " Q " B R O A D BA N D RF POWER TRANSISTOR NPN SILICO N RF POWER TRANSISTOR . , . designed p rim a rily fo r w id e b a n d large-signal o u tp u t a m p lifie r stages in the 2 2 5 -4 0 0 M H z fre q u e n c y range.
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Motorola 3-351
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA B U S5 0 SW IT C H M O D E Series N PN Silicon Power TVansistors The BUS50 transistor is designed for low voltage, high-speed, power switching in in d u ctiv e c irc u its w h e re fail tim e Is c ritic a l. It is p a rtic u la rly su ite d fo r ba ttery
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BUS50
1Q7A-05
O-204AE
-125V)
Motorola 3-351
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220v to 3.7v power supply circuit
Abstract: SC173 DS-02-V
Text: PF400-07 Switching Regulator •DESCRIPTION #S tep-up Switching Regulator 1.5V— 2.0, 2.2, 2.35, 2.4, 2.7, 2.8, 3.0, 3.1, 3.5, 3.7, 4.2 ,5.0V # L o w Operating Voltage (Min 0.9V) •V o lta g e Detecting function, Battery Back-up function (SC17363/7632/7635/7636/7639M/C)
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PF400-07
SC17363/7632/7635/7636/7639M/C)
SCI7630M/C
SCI7631M/C
SCI7633M/Cba,
SCI7635M/Cba
SCI7636M/CBa
32kHz,
220v to 3.7v power supply circuit
SC173
DS-02-V
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Untitled
Abstract: No abstract text available
Text: eSe-rnl-donauctoi LPioaueti, One. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TYPE 2N6128 N-P-N SILICON POWER TRANSISTOR HIGH-FREQUENCY, HIGH-POWER TRANSISTOR WITH COMPUTER-DESIGNED ISOTHERMAL GEOMETRY
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2N6128
2IM6127
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Lx470
Abstract: ba rn
Text: NJM2352 LOW POWER SWITCHING REGULATOR • PACKAGE OUTLINE ■ GENERAL DESCRIPTION The NJM2352 is the industry's first monolithic low power switch ing regulators available in an 8-lead mini-DlP. and designed specifi cally for battery operated instruments. They each contain a 1.3V
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NJM2352
200mA
--10m
Lx470
ba rn
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YC 2604
Abstract: toshiba Yb YC+2604
Text: TOSHIBA RN2601 ~RN2606 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2601, RN2602, RN2603, RN2604, RN2605, RN2606 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. Including Two Devices in SM6 (Super Mini Type with 6 leads)
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RN2601
RN2606
RN2601,
RN2602,
RN2603,
RN2604,
RN2605,
RN1601
RN1606
YC 2604
toshiba Yb
YC+2604
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transistor BC-108
Abstract: dog 53 DIODE BZ TRANSISTOR BC 109 VEB Kombinat DIODE BZP DIODE BZp 6870 service-mitteilungen Stern Radio OA625
Text: SERV IC E-M ITT EILU N G EN VEB IN DUSTRIEVERTRIEB RU ND FU NK UND FE RN SE H EN GSMi ra d io - television AUSGABE: 7/73 DATUM: Juni 1973 Neue Import - Geräte Kassetten-Tonbandgerät " M£ - 25 " Dae Gerät wird aus der VR Ungarn importiert und befindet sich ab
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68x200x235
53-cm-G
III/18/379
transistor BC-108
dog 53
DIODE BZ
TRANSISTOR BC 109
VEB Kombinat
DIODE BZP
DIODE BZp 6870
service-mitteilungen
Stern Radio
OA625
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Untitled
Abstract: No abstract text available
Text: Transistors Low Frequency Transistor 20V, 5A 2 SB 1386 / 2 SB 1412 / 2 SB 1326 / 2 SB 1436 • E x te rn a l dim ensions (Units: mm) •F e a tu re s 1) LOW VcE(sat). 2SB1412 2SB1386 VcE(sai) = -0 .3 5 V (Typ.) 2 ^2 6 .5 ± 0 .2 (|C/ | B = - 4 A / - 0 . 1 A )
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2SB1412
2SB1386
2SD2118
2SD2166.
SC-62
3B1326/2SB1436
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6860F
Abstract: No abstract text available
Text: Motor driver ICs 3-phase motor driver BA6860FS/BA6862FS The BA6860FS and BA6862FS are 3-phase, full-wave, pseudo-linear motor drivers suited for driving movie cam era capstan motors that can be operated at low voltages. The IC s have a torque ripple cancellation circuit to reduce
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BA6860FS/BA6862FS
BA6860FS
BA6862FS
6860F
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Untitled
Abstract: No abstract text available
Text: n r a LOW RIPPLE VOLTAGE REGULATOR WITH EXTERNAL TRANSISTOR o RN5RF SERIES OUTLINE The RN5RF Series are voltage regulator ICs which control external driver transistors with high ripple rejection, high accu racy output voltage, low supply current by CMOS process. Each of these voltage regulator ICs consists of a voltage refer
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800mA.
7744b10
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BUK416-200AE
Abstract: 200AE BUK416-200BE Transistor BO 63
Text: blE T> N AMER P H I L I P S / DI SC R ET E • bb53T31 ÜQ3D4MS Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N -ch an nel e n h an cem en t m ode field-effect p o w er transistor in IS O T O P envelo pe. T h e device is intended fo r u s e in
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BUK416-200AE/BE
OT227B
BUK416
-200AE
-200BE
bbS3131
D0B0411
BUK416-2QO0E
BUK416-200AE
200AE
BUK416-200BE
Transistor BO 63
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qm15td-9b
Abstract: QM15TD-9 transistor BA RW
Text: MITSUBISHI TRANSISTOR MODULES QM 15TD-9B MEDIUM POWER SWITCHING USE INSULATED TYPE QMÎ5TD-9B 15A 500V 250 I i APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders
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15TD-9B
QM15TD-9B
qm15td-9b
QM15TD-9
transistor BA RW
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM30HY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM30HY-2H APPLICATION Inverters, Servo drives, UPS, DC m otor controllers, NC equipm ent OUTLINE DRAWING & CIRCUIT DIAGRAM D im e n s io n s in m m C E Tab# 110, t= 0 .5 M 5,
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QM30HY-2H
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Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT REV, PART NUMBER REV. OCP-PCT4116/E-TR c E.C.N. A NUMBER AND REVISION COMMENTS E.C.N. #10BRDR. & DATE #10776. 6.16.01 B E.C.N. #10815. 12.6.01 C E.C.N. #11148. 5,16.07 TOP VIEW RECOMMENDED SOLDER PAD LAYOUT i r L 2.54 [ 0.100] 7 PLS.
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OCP-PCT4116/E-TR
10BRDR.
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Untitled
Abstract: No abstract text available
Text: A 1/XIAI 19-, i2 1 ; R e v 0 ;9 / 9 6 Cost-Saving M u l t i c h e m i s t r y Battery-Charger System Description In its sim p le st a p p lic a tio n , the VIAX846A is a stand alone, current-lim ited float voltage source that charges Li Ion cells. It can also be paired up w ith a low -cost
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MAX846A
16-Pin
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2SA675
Abstract: t430 transistor t430 T591 PA33 ss-3r
Text: SEC j Iïf/\f7 J '> y = ]> h Silicon Transistor 2SA675 P N P X f c f v T J U J K v U =i > h -7 > v * £ Si PNP Silicon Epitaxial Transistor Fluorescent Indicator Pannel Driver 2 SA 675 i, tîIIÊ fli: £ f i f z sE — Jl' F h ? ^121/PACKAGE DIMENSIONS T% Ë E ^ 'iS î ^ £
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2SA675
2SA675
t430 transistor
t430
T591
PA33
ss-3r
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Untitled
Abstract: No abstract text available
Text: PowerTech BIG IDEAS IN • rn t BK! POWER’ 150 AMPERE TRANSISTOR PT-2523 PT-2524 FEATURES PT2S23 400V 450V . V,wo V.' l P T-S 5Ï4 . . -1501.' ‘J r- o . i= t t j ai , - 500V V, K- . I. U Po 'V 1 1 ! 0V . . IOGA 150A . . . S2SW ~ t ~ I.0O - 1
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PT-2523
PT-2524
KPT2S23
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BA3126N
Abstract: No abstract text available
Text: Audio ICs 2-channel head switch for radio cassette recorders B A 3 1 2 6 F /B A 3 1 2 6 N The BA3126F and BA3126N are dual-channel tape head switching ICs designed for use in radio cassette players. These ICs are designed to withstand voltages of up to 120Vp-pMin., and can handle large-amplitude bias signals
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BA3126F
BA3126N
120Vp-pMin.
14-pin
BA3126F,
BA3126N.
100kHz)
BA3126F/BA3126N
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RJM23520
Abstract: A 671 transistor
Text: LOW POWER SWITCHING REGULATOR NJM2352 T he NIM2352 is the industry’s first monolithic low pow er switching regulators available in an 8-lead m ini-D IP, and designed specifically for battery operated instrum ents. T hey each contain a 1.3V tem perature com pensated bandgap refer
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NJM2352
NIM2352
200mA
280ji
NJM2352
RJM23520
A 671 transistor
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Untitled
Abstract: No abstract text available
Text: Optical disc ICs 4-channel BTL driver for CD players BA6898S / BA6898FP The BA6898S / BA6898FP ICs contain a 4-channel BTL d riv e r, 5V regulator which requires an externally connected PNP transistor , m ulti-purpose operational amplifier, and reset output for use with CD players. Also equipped with an
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BA6898S
BA6898FP
BA6898FP
BA6898S/
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kl2 t1 transistor
Abstract: KYOCERA KBR
Text: Ordering number: EN3653B _ CMOS LSI LC65102A, LC65104A 4-bit Single-chip Microprocessors :'S s. •Á V // / ^ / / / / .f A' '^ O - -iK \ ’V OVERVIEW / / 0 ' " A- The LC65102A and LC65104A are 4-bit, single-chip microprocessors that incorporate 2 Kbyte RO M and
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EN3653B
LC65102A,
LC65104A
LC65102A
14-bit
kl2 t1 transistor
KYOCERA KBR
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diodo 100a
Abstract: Mitsubishi transistor
Text: MITSUBISHI TRANSISTOR MODULES QM100TX1-H HIGH POWER SWITCHING USE INSULATED TYPE OM100TX1-H • lc • V ce x • hFE Collector current . 100A Collector-emitter voltage. 600V DC current gain. 80 • Insulated Type
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QM100TX1-H
OM100TX1-H
E80276
E80271
diodo 100a
Mitsubishi transistor
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Untitled
Abstract: No abstract text available
Text: DISC RETE S E M IC O N D U C TO R S [n]EE¥ BLS2731 -20 Microwave power transistor Preliminary specification Supersedes data of 1997 Nov 05 File under Discrete Semiconductors, SC19a Philips Semiconductors 1998 Mar 06 PHILIPS PHILIPS Philips S e m ico nd uctors
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BLS2731
SC19a
BLS2731-20
OT445C
i25io8/oo/o3/P
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6N133
Abstract: 8n139 74LSxx tr48 74hxx
Text: EsQ HIGH GAIN SPLIT-DARLINGTON OPTOCOUPLERS t r im tc T in H s 6N138 6N139 The 6N138/9 single channel optocoupters contain a 700 nm GaAsP LED emitter which !s optically coupled to a high gain detector in a split Darlington configuration, providing extremely
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6N138
6N139
6N138/9
RS232C,
74LXX
74SXX
741SXX
74HXX
MCC67Û
74LSXX
6N133
8n139
tr48
74hxx
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