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    TRANSISTOR BA 752 Search Results

    TRANSISTOR BA 752 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BA 752 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PCF7952

    Abstract: pcf7944 BGY270 PCF7944AT ON769 ON961 TDA10086HT pch7970 PCF7341 OH191
    Text: Philips Semiconductors, Inc. Product Discontinuation Notice DN50 Exhibit A December 31, 2003 SEE DN50 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.


    Original     		PDF VP22480-3 VP22480-5 VP22530-2 PCF7952 pcf7944 BGY270 PCF7944AT ON769 ON961 TDA10086HT pch7970 PCF7341 OH191

    transistor BC 567

    Abstract: f36 transistor ED-7 transistor BC 339
    Text: AO5404E N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5404E/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM


    Original     		PDF AO5404E AO5404E/L AO5404E AO5404EL -AO5404EL SC89-3L 56555E 5655E 3D6953 D91A3 transistor BC 567 f36 transistor ED-7 transistor BC 339

    transistor BC 567

    Abstract: transistor BC 568 5E55
    Text: AO5804E Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5804E/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM


    Original     		PDF AO5804E AO5804E/L AO5804E AO5804EL -AO5804EL SC-89-6 Volt56555E 5655E 3D6943 D91A3 transistor BC 567 transistor BC 568 5E55

    Untitled

    Abstract: No abstract text available
    Text: Product Folder Sample & Buy Support & Community Tools & Software Technical Documents TXS0104E-Q1 SCES853A – NOVEMBER 2013 – REVISED APRIL 2014 1 Features 3 Description • • The TXS0104E-Q1 device connects an incompatible logic communication from chip-to-chip due to voltage


    Original     		PDF TXS0104E-Q1 SCES853A TXS0104E-Q1

    Untitled

    Abstract: No abstract text available
    Text: Product Folder Sample & Buy Support & Community Tools & Software Technical Documents TXS0104E-Q1 SCES853A – NOVEMBER 2013 – REVISED APRIL 2014 1 Features 3 Description • • The TXS0104E-Q1 device connects an incompatible logic communication from chip-to-chip due to voltage


    Original     		PDF TXS0104E-Q1 SCES853A TXS0104E-Q1

    transistor ba 752

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS ¿¿PA! 752 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in: millimeter This product is Dual N-Channel MOS Field Ef­ fect Transistor designed for power m anagem ent application of notebook com puters, and Li-ion ba t­


    OCR Scan     		PDF

    Helipot

    Abstract: BECKMAN helipot
    Text: Beckman’ Series7521M CM0S.12-BIT MULTIPLYING D/A CONVERTERS E f fe c t iv e d a te : October, 1977 Series 7521M are 12-bit m ultip lying D /A co n ve rte rs designed for m ilitary, aerospace and o th er ap p licatio ns d em an d ing high p e r­ fo rm an ce o ver en v iro n m e n tal extrem es of te m p era tu re, sh ock,


    OCR Scan     		PDF Series7521M 12-BIT 7521M 18-pin 81aefe- Helipot BECKMAN helipot

    A57520

    Abstract: Transistor 3A
    Text: \ U SED O N ANGLÈ í tTHIRD ¡f S EC U R IT Y C lA S S 'N PROJECTION ' / REMOVE A l l ftURRS. SH A R P E D G E S O K H A S H X III9 Q DKG lO »E R EA D IN C O N JU N C T IO N W ITH B .S 308 D R A W IN G N U M K R g H Y .« O F 6 S U T : 3A/A57520 S IM IL A R TO JTEDE C T O -5 C A S E .


    OCR Scan     		PDF A/A57520 Wc/20fc32> A57520 Transistor 3A

    Untitled

    Abstract: No abstract text available
    Text: Standard ICs 6-channel high current driver BA6256 The BA 6256 is a low voltage, high current driver w ith six circuits, and is desig ned fo r a p plicatio ns such as LEDs, relays, solenoids, and other driver devices w hich operate at low voltages. This driver is particularly ideal for direct


    OCR Scan     		PDF BA6256 400mA DIP16 G21Mc

    P2624

    Abstract: transistor d2624 ULN2003
    Text: ULN2001ATHRU ULN2004A DARLINGTON TRANSISTOR ARRAYS SLDS036A - D2624, DECEMBER 1 9 7 6 - REVISED APRIL 1993 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS 500-mA Rated Collector Current Single Output D OR N PACKAGE (TOP VIEW) High-Voltage Outputs. . , ,50 V


    OCR Scan     		PDF ULN2001ATHRU ULN2004A SLDS036A D2624, 500-mA ULN2001A ULN2001 ULN2002A, ULN2003A, P2624 transistor d2624 ULN2003

    TRANSISTOR 131-6 BJ 946

    Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
    Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise


    OCR Scan     		PDF B3-B3715 B3715-X-X-7600 TRANSISTOR 131-6 BJ 946 transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16

    2N4300

    Abstract: No abstract text available
    Text: TYPE 2N4300 N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTOR • TYPE 2N4300 BULLETIN NO. DL-S 668562, FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS 15 W at 100°C Cose Temperature • Max VtE jat of 0.3 V at 1 A l ( • Typ t enof 130 ns at 1 A lc


    OCR Scan     		PDF 2N4300

    2N458B

    Abstract: 2N1022A 2N4588 transistor ba 752 2N1021A 2N456B 2H102 Transistor BC 227 Germanium Transistor Germanium power
    Text: TYPES 2N456B, 2N457B, 2N458B, 2N1021A AND 2N1022A P-N-P ALLOY-JUNCTION GERMANIUM POWER TRANSISTORS Military and Industrial Applications mechanical data The use of silver a llo y to assem ble the mounting b ase a n d the use of resistance w elding to seal the can ,


    OCR Scan     		PDF 2N456B, 2N457B, 2N458B, 2N1021A 2N1022A 2N45M, 2N1021A, 2N1022A 2N458B 2N4588 transistor ba 752 2N456B 2H102 Transistor BC 227 Germanium Transistor Germanium power

    Untitled

    Abstract: No abstract text available
    Text: / T L lim TECHNOLOGY _ LTC1235 M icrop rocessor Supervisory C irc u it F€flTUR€S D C S C R IP T IO n • Guaranteed Reset Assertion at Vcc = 1V ■ 1.5mA Maximum Supply Current ■ Fast 35ns Max. Onboard Gating of RAM Chip Enable Signals


    OCR Scan     		PDF LTC1235 200ms LTC695 LTC1235R

    Untitled

    Abstract: No abstract text available
    Text: V il ivv« PWR-SMP240 PWM Power Supply 1C 85-265 VAC Input Isolated, Regulated DC Output POWER INTEGRATIONS, INC. Product Highlights integrated Power Switch and CMOS Controller • • • O u tp u t p o w e r up to 4 0 W fro m re c tifie d 2 2 0 /2 4 0 V A C


    OCR Scan     		PDF PWR-SMP240 23-Pin

    transistor ba 752

    Abstract: No abstract text available
    Text: TOSHIBA MP6754 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M P 6 7 54 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage


    OCR Scan     		PDF MP6754 961001EAA2 transistor ba 752

    TIP 122

    Abstract: texas instruments tip122 T1P120 TIP122 texas instrument TEXAS INSTRUMENTS TIP120 TIP 122 transistor TRANSISTOR tip122 TIP121 TEXAS TIP120 TIP121
    Text: TEXAS I N S T R -COPTO} 8961726 TEXAS bS INSTR D e | flTblTEb □□3bflci4 E | ~ 62C 3 6 8 9 4 OPTO TIPI 20, TIPI 21, TIPI 22 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS R E V IS E D O C T O B E R 1 9 8 4 T -3 3 -2 9 Designed For Complementary use with TIP125, TIP126, T IP I27


    OCR Scan     		PDF TIP120, TIP121, TIP122 TIP125, TIP126, TIP127 T-33-29 to-22qab TIP120 TIP121 TIP 122 texas instruments tip122 T1P120 TIP122 texas instrument TEXAS INSTRUMENTS TIP120 TIP 122 transistor TRANSISTOR tip122 TIP121 TEXAS

    LT 5247

    Abstract: LT 5247 H LT 5245 LT 5248 LT 5245 TRANSISTOR hz 524-2 generator 380v schematic LT 5242 H LT 5241
    Text: TE XA S IN S T R { O PT O} 8961726 TEXAS bÊ IN STR Î F | ÒTbl72Li □□ 3b clfl5 0 6 2C OPTO) 36982 D TIP660, TIP661, TIP662 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS R E V IS E D O C T O B E R 1 9 8 4 T-33-29 8 0 W a t 100° C Case Temperature


    OCR Scan     		PDF Tbl72Li TIP660, TIP661, TIP662 T-33-29 LT 5247 LT 5247 H LT 5245 LT 5248 LT 5245 TRANSISTOR hz 524-2 generator 380v schematic LT 5242 H LT 5241

    NPN transistor 2n2222 beta value

    Abstract: 2n3838
    Text: TYPE 2N3838 N -P -N , P-N-P D U A L SILICON TRANSISTOR B U L L E T I N NO. D L - S 6 7 7 5 0 1 , M A R C H 1 9 6 5 - R E V I S E D A P R I L 1967 DESIGNED FOR COM PLEM ENTARY MEDIUM-POW ER, HIGH-SPEED SWITCHING AN D GENERAL PURPOSE AM PLIFIER APPLICATIONS


    OCR Scan     		PDF 2N3838 2N2222/2N2907 NPN transistor 2n2222 beta value

    BA6446FM

    Abstract: BA6446FP
    Text: Motor driver ICs 3-phase motor driver BA6446FP/BA6446FM The BA6446FP and BA6446FM are 3-phase, full-wave, pseudo-linear motor drivers suited for VCR capstan motors. The 1C has a torque ripple cancellation circuit to reduce wow and flutter, a forced brake circuit that allows abrupt


    OCR Scan     		PDF BA6446FP/BA6446FM BA6446FP BA6446FM BA6446FP) BA6446FM)

    Untitled

    Abstract: No abstract text available
    Text: o n r m TECHNOLOGY LTC1235 M icroprocessor Supervisory C ircuit FCO TUR C S D C S C R IP T IO n • Guaranteed Reset Assertion at Vcc = 1V ■ 1.5mA Maximum Supply Current ■ Fast 35ns Max. Onboard Gating of RAM Chip Enable Signals ■ Conditional Battery Backup Extends Battery Life


    OCR Scan     		PDF 200ms LTC695 LTC1235 LTC1235 D-8057

    mc34060

    Abstract: MC35060
    Text: TEXAS IN ST R ^ ÌLIN /IN TFCJ SS DE*J f i T b l ? E 4 ^ 0 3 M S t ö “ L j ~ TEXAS INSTR <L IN / INTFC 55C 34560 T -5 8 -1 1 -3 1 LINEAR INTEGRATED CIRCUITS • TYPES MC35060, MC34060 PULSE-WIDTH-MODULATION CONTROL CIRCUITS D2714, MARCH 1983 J OR N DUAL-IN-LINE PACKAGE


    OCR Scan     		PDF 200-mA MC35060 MC34060 MC35060, MC34060 D2714, MC3506Q, MC3406Q T-58-11-31

    TIS43

    Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
    Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.


    OCR Scan     		PDF 2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent

    2N3902

    Abstract: No abstract text available
    Text: TYPE 2N3902 N-P-N SILICON POWER TRANSISTOR HIGH VOLTAGE, HIGH FORWARD AND REVERSE ENERGY DESIGNED FOR INDUSTRIAL AND M IL IT A R Y APPLICATIONS X CD - I m C -< • 100 W at 75°C Case Temperature <- r V À 1 NJ m o jz • 400 V Collector-Emitter Off-State Voltage


    OCR Scan     		PDF 2N3902