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    TRANSISTOR B72 Search Results

    TRANSISTOR B72 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR B72 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    b72L

    Abstract: IC regulator B72 sot-23
    Text: UNISONIC TECHNOLOGIES CO., LTD B772SS PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR „ DESCRIPTION The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. „ FEATURES


    Original     		PDF B772SS B772SS D882SS B772SSL-x-AE3-R B772SSG-x-AE3-R OT-23 2012isonic QW-R206-089 b72L IC regulator B72 sot-23

    TRANSISTOR b72

    Abstract: B772 D882 datasheet d882 B772SS D882SS b72 voltage regulator B772SSG B772SSG-x-AE3-R b772ssl
    Text: UNISONIC TECHNOLOGIES CO., LTD B772SS PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR „ DESCRIPTION The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. „ FEATURES


    Original     		PDF B772SS B772SS D882SS B772SSL B772SSG B772SS-x-AE3-R B772SSL-x-AE3-R B772SSG-x-AE3-R OT-23 QW-R206-089 TRANSISTOR b72 B772 D882 datasheet d882 D882SS b72 voltage regulator B772SSG B772SSG-x-AE3-R b772ssl

    2SB772SS

    Abstract: B72 sot-23
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB772SS PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION 3 The UTC 2SB772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 2 FEATURES


    Original     		PDF 2SB772SS 2SB772SS 2SD882SS OT-23 2SB772SSL 2SB772SS-x-AE3-R 2SB772SSL-x-AE3-R OT-23 2SB772SSL-x-AE3-R B72 sot-23

    B72 sot-23

    Abstract: TRANSISTOR b72 B772SS D882SS D882* transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD B772SS PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION 3 The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 2 FEATURES


    Original     		PDF B772SS B772SS OT-23 D882SS B772SSL B772SS-x-AE3-R B772SSL-x-AE3-R B72 sot-23 TRANSISTOR b72 D882SS D882* transistor

    B72 sot-23

    Abstract: 2SB772SS QW-R206-089
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB772SS PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION 3 The UTC 2SB772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 2 FEATURES


    Original     		PDF 2SB772SS 2SB772SS 2SD882SS OT-23 2SB772SSL 2SB772SS-x-AE3-R 2SB772SSL-x-AE3-R OT-23 2SB772SSL-x-AE3-R B72 sot-23 QW-R206-089

    B72 sot-23

    Abstract: TRANSISTOR b72 D882 datasheet d882 b72L b72 voltage regulator B772 b772s marking b72 B772SS
    Text: UNISONIC TECHNOLOGIES CO., LTD B772SS PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR „ 3 DESCRIPTION The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. „ 1 2 FEATURES


    Original     		PDF B772SS B772SS D882SS OT-23 B772SSL B772SSG B772SS-x-AE3-R B772SSL-x-AE3-R B772SSG-x-AE3-R B72 sot-23 TRANSISTOR b72 D882 datasheet d882 b72L b72 voltage regulator B772 b772s marking b72

    datasheet d882

    Abstract: b72 voltage regulator B772 TRANSISTOR b72 B772SS D882SS transistor marking 2A H B721
    Text: UTC B772SS PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 2 1 FEATURES 3 *High current output up to 3A


    Original     		PDF B772SS B772SS D882SS OT-23 QW-R206-017 datasheet d882 b72 voltage regulator B772 TRANSISTOR b72 D882SS transistor marking 2A H B721

    TRANSISTOR b72

    Abstract: B721
    Text: UTC B772SS PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 2 1 FEATURES *High current output up to 3A


    Original     		PDF B772SS B772SS D882SS OT-23 QW-R206-017 TRANSISTOR b72 B721

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device


    OCR Scan     		PDF MUN5211T1 SC-70/SOT-323 0Cn354L| MUN5211T1

    BUK457-600B

    Abstract: T0220AB
    Text: PHILIPS INTERNATIONAL L.5E D fll 7110fl2b CJObmMb ^ 3 Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF 711002b 0b414b BUK457-600B T0220AB 711002b BUK457-600B T0220AB

    BU1708AX

    Abstract: 7DFL
    Text: Product specification Philips Semiconductors Silicon diffused power transistor BU1708AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope specially designed for 277 V high frequency electronic lighting ballast applications.


    OCR Scan     		PDF BU1708AX QD77S3S f-rs54] OT186A; OT186 007753b BU1708AX 7DFL

    lem HA

    Abstract: BU1708AX
    Text: Product specification Philips Semiconductors Silicon diffused power transistor BU1708AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope specially designed for 277 V high frequency electronic lighting ballast applications.


    OCR Scan     		PDF BU1708AX OT186A; OT186 007753b lem HA BU1708AX

    D1571

    Abstract: AA0463 st cpcap zy 406 D157 DSP56300 DSP56301 G30-88 G38-87 series T212 data
    Text: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56301 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56301 specifications are preliminary and are from design simulations, and may not be fully tested or guaranteed at this


    OCR Scan     		PDF DSP56301 AA0500 b3b72MA D1571 AA0463 st cpcap zy 406 D157 DSP56300 G30-88 G38-87 series T212 data

    BUK457-600B

    Abstract: No abstract text available
    Text: PHILIPS INTERNATIONAL fc,5E D m 7110fl2fe. O O b m M b IbB • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 7110fl2fe. BUK457-600B -T0220AB VDS/V-12jy

    equivalent transistor TT 3034

    Abstract: transistor TT 3034 D718 transistor D718 equivalent transistor a769 TT 3034 transistor transistor d718 d718* transistor k d718 D718
    Text: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded (thru-hole) packages


    OCR Scan     		PDF -335/H-135/D-40 -334/H-280/D-41 -334/H-280/D-41 -334/H-28Q/D-41 L-56SW-42/H-115 L-565/W-42/H-12 OT-23, SC-59 equivalent transistor TT 3034 transistor TT 3034 D718 transistor D718 equivalent transistor a769 TT 3034 transistor transistor d718 d718* transistor k d718 D718

    transistor b722

    Abstract: b863 tc 144e Transistor b861 B861 equivalent transistor TT 3034 A771 TRANSISTOR B861 transistor DTC103 transistor TT 3034
    Text: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES; w w w . Datasheet. i n • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded


    OCR Scan     		PDF

    equivalent transistor TT 3034

    Abstract: transistor TT 3034 A771 TRANSISTOR transistor b722 124e transistor Transistor b865 tc 144e DTC1132 B718 TRANSISTOR 124E
    Text: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, D river & Interface Circuits FEATURES; w w w . Datasheet. i n • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b^E T> b b S a ' m 0027752 T27 APX BFX34 J V SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a TO-39 metal envelope primarily intended for use as high-current switching device, e.g. inverters and switching regulators. QUICK REFERENCE DATA


    OCR Scan     		PDF BFX34 bbS3131 0Q577SS bb53T31 002775b bbS3T31

    B861 transistor

    Abstract: equivalent transistor TT 3034 transistor b722 b863 PK2222A a774 transistor TT 3034 tc 144e TRANSISTOR 124E A771 TRANSISTOR
    Text: R OJ N m DTA/DTB/DTC/DTD I DIGITAL TRANSISTOR APPLICATION: • j EQUIVALENT CIRCUITS: Inverter, D river & Interface Circuits FEA T U R ES; • R ep laces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded


    OCR Scan     		PDF J/U13 B861 transistor equivalent transistor TT 3034 transistor b722 b863 PK2222A a774 transistor TT 3034 tc 144e TRANSISTOR 124E A771 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: September 1996 National Semiconductor NDT453N N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancem ent m ode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDT453N OT-223 34bTb74

    Untitled

    Abstract: No abstract text available
    Text: September 1996 National Semiconductor NDT451N N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancem ent m ode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDT451N NDT451N OT-223 34bTb74

    T2D 24 DIODE

    Abstract: T2d 43 diode T2D 65 DIODE T2d 61 diode T2D DIODE 42 T2D DIODE 32 T2D 04 DIODE diode T2D
    Text: July 1996 NDT455N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is


    OCR Scan     		PDF NDT455N OT-223 NDT455N OT-223 T2D 24 DIODE T2d 43 diode T2D 65 DIODE T2d 61 diode T2D DIODE 42 T2D DIODE 32 T2D 04 DIODE diode T2D

    Untitled

    Abstract: No abstract text available
    Text: NDT452AP P-Channel Enhancement Mode Field Effect Transistor G eneral Description Features These P-Channel enhancem ent mode pow er field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored


    OCR Scan     		PDF NDT452AP NDT452AP OT-223 34bTb74

    NDT453N

    Abstract: No abstract text available
    Text: September 1996 National Semiconductor" N D T453N N-Channel Enhancement M ode Field Effect Transistor General Description Features Power SOT N-Channel enhancem ent m ode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDT453N NDT453N OT-223