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    TRANSISTOR B11 62 Search Results

    TRANSISTOR B11 62 Result Highlights (5)

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    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR B11 62 Datasheets Context Search

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    TP 1078

    Abstract: transistor 926
    Text: TSC128D High Voltage NPN Transistor with Diode TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter TO-263 2 D PAK PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 4A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation


    Original     		TSC128D O-220 O-263 TSC128DCZ TSC128DCM O-263 50pcs 800pcs TP 1078 transistor 926 PDF

    Transistors

    Abstract: transistor pnp 448
    Text: Die no. B-11 PNP medium power transistor These are epitaxial planar PNP silicon transistors. Features Dimensions Units: mm TO-92 available in TO-92 package; for packaging information, see page 448 collector-to-emitter breakdown voltage, BVCE0 = 40 V (min) at


    OCR Scan     		MPS6562 Transistors transistor pnp 448 PDF

    ESD-S3.1

    Abstract: IC SEM 2005 RTSX32SU TM3015 TM3015.7 transistor N3B cmos esd sensitivity ionizer A54SX08A A54SX16A
    Text: Application Note AC233 Electro-Static Discharge Introduction All electronic integrated circuit IC devices are susceptible to damage from static electricity or electrostatic discharge (ESD). While some devices can withstand thousands of volts of ESD before damage, others


    Original     		AC233 ESD-S3.1 IC SEM 2005 RTSX32SU TM3015 TM3015.7 transistor N3B cmos esd sensitivity ionizer A54SX08A A54SX16A PDF

    z144

    Abstract: zener Diode B22 1021-P1 cascode transistor array CA3127 CA3127E CA3127M CA3127M96 HP342A ,zener Diode B22
    Text: CA3127 S E M I C O N D U C T O R High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the


    Original     		CA3127 CA3127 500MHz. 200MHz z144 zener Diode B22 1021-P1 cascode transistor array CA3127E CA3127M CA3127M96 HP342A ,zener Diode B22 PDF

    HP-343A

    Abstract: HP342A y12 t 646 HP343A CA3127E 1021-P1 cascode transistor array 150MIL CA3127 CA3127F
    Text: CA3127 S E M I C O N D U C T O R High Frequency N-P-N Transistor Array March 1993 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127* consists of five general purpose silicon n-p-n transistors on a common monolithic substrate. Each of the


    Original     		CA3127 CA3127* CA3127 500MHz. 100MHz 1021-P1 100MHz HP343A HP-343A HP342A y12 t 646 HP343A CA3127E 1021-P1 cascode transistor array 150MIL CA3127F PDF

    z144

    Abstract: CA3127 1021-P1 cascode transistor array HP342A CA3127E CA3127M CA3127M96 zener Diode B22
    Text: CA3127 High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the


    Original     		CA3127 CA3127 500MHz. z144 1021-P1 cascode transistor array HP342A CA3127E CA3127M CA3127M96 zener Diode B22 PDF

    ccb transistor

    Abstract: TRANSISTOR 100MHz
    Text: CA3127 Data Sheet August 2003 FN662.4 High Frequency NPN Transistor Array Features The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the completely isolated transistors exhibits low 1/f noise and a


    Original     		CA3127 FN662 CA3127 500MHz. 30dBtersil ccb transistor TRANSISTOR 100MHz PDF

    cr68

    Abstract: 55HT4 temperature sensor IC CR68 2 IC Temperature Sensors 2N3906 2SB0709 PMBT3906 CR-73
    Text: F75367 F75367 Datasheet ±1oC Temperature Sensor with I2C-SST Bridge Release Date: February, 2008 Revision: V0.11P Feb., 2008 V0.11P F75367 F75367 Datasheet Revision History Version Date Page Revision History V0.10P 2007/12/20 - Preliminary Version. V0.11P


    Original     		F75367 F75367 cr68 55HT4 temperature sensor IC CR68 2 IC Temperature Sensors 2N3906 2SB0709 PMBT3906 CR-73 PDF

    z144

    Abstract: HP342A CA3127 CA3127M CA3127MZ
    Text: CA3127 Data Sheet June 5, 2006 FN662.5 High Frequency NPN Transistor Array Features The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the completely isolated transistors exhibits low 1/f noise and a


    Original     		CA3127 FN662 CA3127 500MHz. z144 HP342A CA3127M CA3127MZ PDF

    CA3246m

    Abstract: CA3227 CA3227E CA3227M CA3227M96 CA3246 CA3246E CA3246M96
    Text: CA3227, CA3246 S E M I C O N D U C T O R High-Frequency N-P-N Transistor Arrays For LowPower Applications at Frequencies Up to 1.5GHz March 1993 Features Description • Gain-Bandwidth Product fT > 3GHz The CA3227 and CA3246* consist of five general purpose


    Original     		CA3227, CA3246 CA3227 CA3246* TA10854 TA10855, CA3227 CA3246m CA3227E CA3227M CA3227M96 CA3246 CA3246E CA3246M96 PDF

    CA3246M

    Abstract: CA3246 CA3246M96 850e 610E CA3227 CA3227E CA3227M CA3227M96 SPICE 2G6
    Text: CA3227, CA3246 Data Sheet High-Frequency NPN Transistor Arrays For Low-Power Applications at Frequencies Up to 1.5GHz September 1998 File Number 1345.4 Features • Gain-Bandwidth Product fT . . . . . . . . . . . . . . . . . >3GHz • Five Transistors on a Common Substrate


    Original     		CA3227, CA3246 CA3227 CA3246 CA3246M CA3246M96 850e 610E CA3227E CA3227M CA3227M96 SPICE 2G6 PDF

    CA3246m

    Abstract: 610E CA3227 CA3227E CA3227M CA3227M96 CA3246 CA3246E CA3246M96 m14 transistor
    Text: CA3227, CA3246 S E M I C O N D U C T O R High-Frequency NPN Transistor Arrays For LowPower Applications at Frequencies Up to 1.5GHz August 1996 Features Description • Gain-Bandwidth Product fT . . . . . . . . . . . . . . . >3GHz The CA3227 and CA3246 consist of five general purpose silicon NPN transistors on a common monolithic substrate.


    Original     		CA3227, CA3246 CA3227 CA3246 CA3227 CA3246m 610E CA3227E CA3227M CA3227M96 CA3246E CA3246M96 m14 transistor PDF

    AN5337 ca3028

    Abstract: AN5337 IC CA 3028A ca3028 CA3028A CA3028AM96 diode L2.8 cascode 120M CA30
    Text: Semiconductor CT T ODU CEMEN 7 R P E A 74 T L 7 E OL REP 00-442OBS ENDED 8 1 m s.co MM ions ECO pplicat p@harri R O N ral A centap Cent : Call or email CA3028A January 1999 File Number 382.5 Differential/Cascode Amplifier for Commercial and Industrial Equipment


    Original     		CA3028A 120MHz CA3028A 120MHz. DifCA3028A ferenCA3028AE AN5337 ca3028 AN5337 IC CA 3028A ca3028 CA3028AM96 diode L2.8 cascode 120M CA30 PDF

    CA3127

    Abstract: CA3227 CA3227M CA3227M96 TB379 610E 800E
    Text: CA3227 IGNS W DES E N R O DED F E PRODUCT MMEN UT O C IT E T Data Sheet U BS S NOT R E L B A3127 POSSI CA3127, HF High-Frequency NPN Transistor Array For Low-Power Applications at Frequencies Up to 1.5GHz The CA3227 consists of five general purpose silicon NPN


    Original     		CA3227 A3127 CA3127, CA3227 FN1345 CA3127 CA3227M CA3227M96 TB379 610E 800E PDF

    610E

    Abstract: 800E CA3227 CA3227E CA3227M CA3227M96
    Text: CA3227 TM Data Sheet High-Frequency NPN Transistor Array For Low-Power Applications at Frequencies Up to 1.5GHz The CA3227 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the transistors exhibits a value of fT in excess of 3GHz, making


    Original     		CA3227 CA3227 610E 800E CA3227E CA3227M CA3227M96 PDF

    PSH10

    Abstract: MPSH10 datasheet MPSH10 MPSH81
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSH10 NPN 1 GHz general purpose switching transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1998 Aug 27 Philips Semiconductors Product specification


    Original     		M3D186 MPSH10 MSB033 MPSH81. PSH10. SCA60 125104/00/04/pp8 PSH10 MPSH10 datasheet MPSH10 MPSH81 PDF

    Untitled

    Abstract: No abstract text available
    Text: RF2312              • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations 3 The RF2312 is a general purpose, low cost high linearity


    Original     		RF2312 RF2312 1000MHz, 2500MHz. PDF

    AN5337 ca3028

    Abstract: CA3028 CA3053 CA3028A CA3053E CA3053 Metal Can AN5337 CA3028AE CA3028BE ca3053s
    Text: CA3028A, CA3028B, CA3053 S E M I C O N D U C T O R Differential/Cascode Amplifiers for Commercial and Industrial Equipment from DC to 120MHz November 1996 Features Description • Controlled for Input Offset Voltage, Input Offset Current and Input Bias Current CA3028 Series Only


    Original     		CA3028A, CA3028B, CA3053 120MHz CA3028 CA3028A CA3028B 120MHz. AN5337 ca3028 CA3053 CA3053E CA3053 Metal Can AN5337 CA3028AE CA3028BE ca3053s PDF

    Untitled

    Abstract: No abstract text available
    Text: GFC2100A GFC2100A GFC2100A 16-BIT MAGNITUDE COMPARATOR GENERAL DESCRIPTION: THE GFC2100A IS A MAGNITUDE COMPARATOR. IT COMPARES TWO 16-BIT BINARY NUMBERS AND YIELDS THREE OUTPUTS A>B, A<B, AND A-B . PIN DIAGRAM: GFC2100A - GATES USED - 170 •AREA USED - 183 GATE


    OCR Scan     		GFC2100A GFC2100A 16-BIT LL7000 LSA2000 -GFC2100A PDF

    A62P

    Abstract: A 144 transistor N11X 306 transistor ZD 607 la4s diode ZENER A21 ZENER A11 AN9DA00 transistor A21
    Text: Analog Master Slice AN9D, AN9E, AN9F Series Analog master slice IC series • Overview The AN9D, AN9E and AN9F series are master slice ICs of bipolar process, which enables you to integrate an analog circuit easily onto a single chip. A custom IC can be made by placing a wired pattern designed in line with the customer's


    Original     		AN9DX00 AN9EX00 AN9FX00 AN9DA00 AN9DB00 AN9DC00 AN9DD00 AN9DE00 AN9DF00 AN9EA00 A62P A 144 transistor N11X 306 transistor ZD 607 la4s diode ZENER A21 ZENER A11 transistor A21 PDF

    tle7241

    Abstract: diode df6 7241E TLE 7241E SCK 164 AEC-Q100 JESD51-2 55114 hz7a1 ISG Infineon
    Text: Data Sheet, Rev. 1.1, Jan. 2009 TLE 7241E Dual Channel Constant Current Control Solenoid Driver Automotive Power TLE 7241E Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


    Original     		7241E tle7241 diode df6 7241E TLE 7241E SCK 164 AEC-Q100 JESD51-2 55114 hz7a1 ISG Infineon PDF

    7241E

    Abstract: tle7241e 11DF2 TLE 7241E tle7241
    Text: Data Sheet, Rev. 1.0, Sept 2007 TLE 7241E Dual Channel Constant Current Control Solenoid Driver Automotive Power 48 TLE 7241E Revision History: 2007-09-19 Rev. 1.0 Previous Version: 30AUG07 Release of V1.0 Datasheet Template: ap_a5_vr_tmplt.fm / 2 / 2004-09-15


    Original     		7241E 7241E 30AUG07 tle7241e 11DF2 TLE 7241E tle7241 PDF

    CA3246M

    Abstract: transistor k 911
    Text: CA3227, CA3246 Semiconductor September 1998 High-Frequency NPN Transistor Arrays For Low-Power Applications at Frequencies Up to 1.5GHz File Number 1345.4 Features • Gain-Bandwidth Product f j . >3GHz • Five Transistors on a Common Substrate


    OCR Scan     		CA3227, CA3246 CA3227 CA3246 CA3246M transistor k 911 PDF

    Transistor BC177

    Abstract: SOT-18 BC177 pnp transistor DATASHEET Transistor BC107 BC177 TRANSISTOR bc177b BC107 BC177A BC177B BC177 NPN transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET * M3D125 BC177 PNP general purpose transistor Product specification Supersedes data of 1997 May 01 File under Discrete Semiconductors, SC04 1997 Jun 04 Philips Semiconductors Product specification PNP general purpose transistor


    Original     		M3D125 BC177 BC107. MAM263 SCA54 117047/00/03/pp8 Transistor BC177 SOT-18 BC177 pnp transistor DATASHEET Transistor BC107 BC177 TRANSISTOR bc177b BC107 BC177A BC177B BC177 NPN transistor PDF