TRANSISTOR B 886 Search Results

TRANSISTOR B 886 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR B 886 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE b^E D • bbS3c 31 0D23H3B l b 3 BLW91 X IAPX U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range fo r a nominal supply voltage o f 28 V. The transistor is resistance stabilized and	OCR Scan	0D23H3B BLW91	PDF
Untitled Abstract: No abstract text available Text: Formosa MS NPN Transistor BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C List List. 1 Package outline. 2	Original	BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C 1000hrs 1000hrs 15min 20sec 1000cycle 96hrs	PDF
SOT-23 Abstract: TRANSISTOR SMD fr 21 smd transistor ds 65 Text: Formosa MS SMD NPN Transistor BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C List List. 1 Package outline. 2	Original	BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C 1000hrs 15min) 15min 20sec 1000cycle 96hrs SOT-23 TRANSISTOR SMD fr 21 smd transistor ds 65	PDF
GMBTA05 Abstract: No abstract text available Text: G M B TA 0 5 1/2 NPN SILICON TRANSISTOR Description The GMBTA05 is Amplifier Transistor. Package Dimensions REF A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30	Original	GMBTA05	PDF
HMPS650 Abstract: audio transistor Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6327-B Issued Date : 1992.09.09 Revised Date : 2000.09.20 Page No. : 1/4 HMPS650 NPN SILICON TRANSISTOR Description The HMPS650 is designed for audio transistor. Absolute Maximum Ratings • Maximum Temperatures	Original	HE6327-B HMPS650 HMPS650 audio transistor	PDF
HMPS751 Abstract: No abstract text available Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6317-B Issued Date : 1992.09.09 Revised Date : 2000.10.01 Page No. : 1/4 HMPS751 PNP SILICON TRANSISTOR Description Amplifier Transistor Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C	Original	HE6317-B HMPS751 HMPS751	PDF
HMPSA05 Abstract: No abstract text available Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6301-B Issued Date : 1992.09.09 Revised Date : 2000.10.01 Page No. : 1/4 HMPSA05 NPN SILICON TRANSISTOR Description Amplifier transistor Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C	Original	HE6301-B HMPSA05 HMPSA05	PDF
HMPS6562 Abstract: No abstract text available Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6322-B Issued Date : 1992.09.09 Revised Date : 2000.09.20 Page No. : 1/4 HMPS6562 PNP SILICON TRANSISTOR Description The HMPS6562 is designed for audio transistor. Absolute Maximum Ratings • Maximum Temperatures	Original	HE6322-B HMPS6562 HMPS6562	PDF
HMPSA43 Abstract: 100MHZ HMPSA93 Text: HI-SINCERITY Spec. No. : HE6334-B Issued Date : 1992.11.18 Revised Date : 2000.10.01 Page No. : 1/3 MICROELECTRONICS CORP. HMPSA43 NPN SILICON TRANSISTOR Description The HMPSA43 is high voltage transistor. Features • High Collector-Emitter Breakdown Voltage	Original	HE6334-B HMPSA43 HMPSA43 HMPSA93 100MHZ HMPSA93	PDF
HMPS651 Abstract: No abstract text available Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6326-B Issued Date : 1992.09.09 Revised Date : 2000.09.20 Page No. : 1/4 HMPS651 NPN SILICON TRANSISTOR Description Amplifier transistor Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C	Original	HE6326-B HMPS651 HMPS651	PDF
1902 transistor Abstract: H2N6426 Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6232-B Issued Date : 1998.01.09 Revised Date : 2000.09.15 Page No. : 1/3 H2N6426 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Transistor Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C	Original	HE6232-B H2N6426 1902 transistor H2N6426	PDF
H2N6427 Abstract: No abstract text available Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6274-B Issued Date : 1994.11.18 Revised Date : 2000.09.15 Page No. : 1/3 H2N6427 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Transistor Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C	Original	HE6274-B H2N6427 H2N6427	PDF
1902 transistor Abstract: H2N5089 Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6273-B Issued Date : 1993.12.08 Revised Date : 2000.09.15 Page No. : 1/3 H2N5089 NPN EPITAXIAL PLANAR TRANSISTOR Description Amplifier Transistor. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C	Original	HE6273-B H2N5089 1902 transistor H2N5089	PDF
HM27 Abstract: No abstract text available Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. :HE9517-B Issued Date : 1997.06.06 Revised Date : 2000.10.01 Page No. : 1/3 HM27 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington transistor. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C	Original	HE9517-B HM27	PDF

BFQ 42 transistor Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS B IT Â S y i I T BF0251 PNP video transistor 1998 Oct 06 Product specification Supersedes data of 1997 Oct 02 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP video transistor BFQ251 FEATURES	OCR Scan	BF0251 BFQ251 MSB033 125102/00/04/pp8 BFQ 42 transistor	PDF
HLB121I Abstract: No abstract text available Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9027-B Issued Date : 1996.11.06 Revised Date : 2000.11.01 Page No. : 1/3 HLB121I NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB121I is a medium power transistor designed for use in	Original	HE9027-B HLB121I HLB121I	PDF
HM14 Abstract: HM64 Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. :HE5908-B Issued Date : 1998.04.09 Revised Date : 2000.10.01 Page No. : 1/3 HM14 NPN EPITAXIAL PLANAR TRANSISTOR Description The HM14 is a darlington amplifier transistor designed for applications requiring extremely high current gain.	Original	HE5908-B HM14 HM64	PDF
1902 transistor Abstract: H2N3417 Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6267-B Issued Date : 1992.11.25 Revised Date : 2000.09.01 Page No. : 1/3 H2N3417 NPN SILICON TRANSISTOR Description The H2N3417 is a silicon NPN planar epitaxial transistor designed for small signal general purpose and switching applications.	Original	HE6267-B H2N3417 H2N3417 1902 transistor	PDF
MPS3639 Abstract: transistor yr Text: MPS3639 silicon PNP SILICON ANNULAR TRANSISTOR PNP SILICON SWITCHING TRANSISTOR . . designed for use in low-current, high-speed switching applications. Collector-Em itter Breakdown Voltage — B V c e S = 6 0 Vdc (Min) Fast Switching Tim e @ l c * 50 mAdc	OCR Scan	MPS3639 MPS3639 transistor yr	PDF
8 pin ic lm 745 Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS BF588 PNP high-voltage transistor 1999 Apr 12 Product specification Supersedes data of 1996 Dec 09 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP high-voltage transistor BF588 FEATURES • Low fe e d b a ck capacitance.	OCR Scan	BF588 BF585 BF587. MBH792 115002/00/03/pp8 8 pin ic lm 745	PDF
BLW91 Abstract: high power npn UHF transistor blw91 transistor Text: LSE » ES 7110fl2b □ 0fc.33ci5 457 « P H I N BLW91 PHILIPS INTERNATIONAL_ U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor suitable fo r transm itting applications in class-A, B or C in the u.h.f. and v.h.f. range fo r a nominal supply voltage o f 28 V. The transistor is resistance stabilized and	OCR Scan	7110fl2b 33ci5 BLW91 BLW91 high power npn UHF transistor blw91 transistor	PDF
hbf423 Abstract: No abstract text available Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6403-B Issued Date : 1993.03.18 Revised Date : 2000.09.20 Page No. : 1/3 HBF423 PNP EPITAXIAL PLANAR TRANSISTOR Description Video B-class Power stages in TV-receivers Absolute Maximum Ratings • Maximum Temperatures	Original	HE6403-B HBF423 hbf423	PDF
GL5672 Abstract: No abstract text available Text: 1/2 GL5672 NPN LOW FREQUENCY TRANSISTOR Description The GL5672 is a low frequency transistor . Excellent DC current gain characteristics. Package Dimension REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 10 0.60 0.80 0.25 0.35 REF. B J	Original	GL5672 GL5672	PDF
HE8051 Abstract: HE8551 Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6113-B Issued Date : 1992.09.30 Revised Date : 2000.09.20 Page No. : 1/3 HE8551 PNP EPITAXIAL PLANAR TRANSISTOR Description The HE8551 is designed for use in 2W output amplifier of portable radios in class B push-pull operation.	Original	HE6113-B HE8551 HE8551 HE8051 HE8051	PDF

TRANSISTOR B 886 Search Results

TRANSISTOR B 886 Result Highlights (5)

TRANSISTOR B 886 Datasheets Context Search

Untitled

Untitled

SOT-23

GMBTA05

HMPS650

HMPS751

HMPSA05

HMPS6562

HMPSA43

HMPS651

1902 transistor

H2N6427

1902 transistor

HM27

BFQ 42 transistor

HLB121I

HM14

1902 transistor

MPS3639

8 pin ic lm 745

BLW91

hbf423

GL5672

HE8051