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    TRANSISTOR B 458 Search Results

    TRANSISTOR B 458 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR B 458 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AE8 diode

    Abstract: 4a8 diode diode marking A43 DIODE S6 4aa BV99 aA88 IPB120N06N G
    Text: IPB120N06N G IPP120N06N G "%&$!"# Power-Transistor Product Summary Features . V 9G O >@50ABAE8 B 2 78=6 2 >=D4@B 4@A 0=3 AG=2 @42 B 858 2 0B 8>= R  + >=< 0F + & O ' 2 70=4;4=70=2 4< 4=B =>@< 0;4D4; I &/  D4@A8 >= X" /- I9 6 O   R >? 4@0B 8=6 B


    Original     		PDF IPB120N06N IPP120N06N AE8 diode 4a8 diode diode marking A43 DIODE S6 4aa BV99 aA88 IPB120N06N G

    IPP050N06NG

    Abstract: diode a43 IPB050N06NG
    Text: IPP050N06N G IPB050N06N G "%&$!"# Power-Transistor Product Summary Features V 9G O >@50ABAE8 B 2 78=6 2 >=D4@B 4@A 0=3 AG=2 @42 B 858 2 0B 8>= R  + >=< 0F + & O ' 2 70=4;4=70=2 4< 4=B =>@< 0;4D4;  D4@A8 >= I9 . I ,&/ X" ( 6 O   R >? 4@0B 8=6 B


    Original     		PDF IPP050N06N IPB050N06N IPP050N06NG diode a43 IPB050N06NG

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT458 ISSUE 4 – APRIL 2002 FEATURES * 400 Volt VCEO E C COMPLEMENTARY TYPE – FMMT558 PARTMARKING DETAIL – 458 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO


    Original     		PDF FMMT458 FMMT558 100ms

    FMMT458

    Abstract: FMMT558
    Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT458 ISSUE 4 – APRIL 2002 FEATURES * 400 Volt VCEO E C COMPLEMENTARY TYPE – FMMT558 PARTMARKING DETAIL – 458 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO


    Original     		PDF FMMT458 FMMT558 100ms FMMT458 FMMT558

    FMMT458

    Abstract: FMMT558 ic tba 500 DSA003671
    Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT458 ISSUE 4 – APRIL 2002 FEATURES * 400 Volt VCEO E C COMPLEMENTARY TYPE – FMMT558 PARTMARKING DETAIL – 458 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO


    Original     		PDF FMMT458 FMMT558 Vol75 100ms FMMT458 FMMT558 ic tba 500 DSA003671

    Type A USB

    Abstract: transistor 2515
    Text: 458-2012:QuarkCatalogTempNew 9/1/12 12:57 PM Page 458 ENCLOSURES A/V, TEST CONNECTORS & IC SOCKETS TEST & MEASUREMENT 2 USB, Strip, DIP, Grid, Transistor Sockets and Headers Standard Solder Tail DIP Sockets Open Frame A B .015-.025 .010*.018 Most popular line of standard low profile IC-Sockets. Open frame design leaves


    Original     		PDF O-100 Type A USB transistor 2515

    BUK545

    Abstract: BUK545-60A BUK545-60B
    Text: PHILIPS INTERNATIONAL bSE D B 7110flSb O O b m ^ b Philips Semiconductors PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope.


    OCR Scan     		PDF 7110ASfc. BUK545-60A/B OT186 BUK545 10CHXh ID/100 BUK545-60A BUK545-60B

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    rank 502 fp

    Abstract: 2SC4863
    Text: Ordering n u m b e r:E N 4 5 8 2 _ 2SC4863 N o.4582 N PN Epitaxial Planar Silicon Transistor I VHF to UHF Wide-Band Low-Noise Amp Applications F e a tu r e s •Low noise : N F = l.ld B typ f= 1GHz • H igh ga in : I S21e I 2= lld B typ (f= 1GHz)


    OCR Scan     		PDF EN4582 2SC4863 rank 502 fp

    2N4115

    Abstract: 2N4116 2N5002 2N5004 2N5083 2N5084 2N5085 2N5284 2N5285 2N5346
    Text: llP NPMTO-111 ^ 84aa_^ 2 D I Q D E ISOlaledcnllBntn.-ltenn.-rt' l a f l H B 3 S E TRANSISTOR GO I N C . Ö4D 0G0Q13S □ I 00128 ^— — — t D1DDE TRANSISTOR CQ.J(\IC. FAX ^201^6755883 139-385 * 0u,8lde NV 4 NJ area ca|l T O LL FR EE 800-526-4581 PNP


    OCR Scan     		PDF NPWTO-111 fl35a 2N4115 2N4116 2N5002 2N5004 2N5083 2N5084 2N5085 2N5284 2N5285 2N5346

    Untitled

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor BUK545-60A/B Logic level GENERAL DESCRIPTION PINNING-SOT186 PIN SYMBOL 0 O > N-channel enhancement mode logic level fieid-effect power


    OCR Scan     		PDF BUK545-60A/B BUK545

    bf199

    Abstract: transistor NPN BF199
    Text: BF199 J V_ SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 package. The B F 199 has a very low feedback capacitance and is intended fo r use in the ou tp u t stage o f a vision i.f. amplifier. QUICK REFERENCE D ATA Collector-base voltage open emitter


    OCR Scan     		PDF BF199 BF199 transistor NPN BF199

    TRANSISTOR J 5804 NPN

    Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
    Text: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.


    OCR Scan     		PDF 2SC4885 SC-70 TRANSISTOR J 5804 NPN nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF

    TRANSISTOR GB 558

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •


    OCR Scan     		PDF 2SC5013 2SC5013-T1 2SC5013-T2 TRANSISTOR GB 558

    2482 TRANSISTOR

    Abstract: X09321
    Text: A va ila b le as: VOLTAGE CONTROLLED OSCILLATOR T OÆ9?21 400-500 MHz TOM 9321, 4 Pin TO -8 T4 TON9321, 4 Pin Surface Mount (SM3) B X09321, Connectorized Housing (H1) Features • ■ ■ ■ Low Noise Bipolar Transistor Broad Tuning Range Operating Case Temp. -40 °C to + 85 °C


    OCR Scan     		PDF ON9321, X09321, 2482 TRANSISTOR X09321

    UPA46D

    Abstract: No abstract text available
    Text: B&DEnterprises Main&LibertySt. Russell PA16545 1-800 458-6053 fax 814}-757-5400 u PA46D NPN Silicon Epitaxial Quad Transistor High Current High Speed Switching Industrial Use ¿iPA46D(i, -i i f Jfc E l/ Package Dimensions (Unit: mm y f->?m t y - ^ l z 4flii0 tK 7 ^ 7 ,


    OCR Scan     		PDF uPA46D iPA46D UPA46D

    2N5084

    Abstract: 2N5284 FL-35A 2N4115 2N5085 2N4116 2N5002 2N5004 2N5083 2N5285
    Text: llP NPMTO-111 I s o la t e d c n llB n t n . - lt e n n . - r t ' ^ 84aa_^ 2 DIQDE TRANSISTOR CO IN C . l a f l H B 3 S E 0G0Q13S □ I Ö4D 0 0 1 2 8 ^ ——— t D1DDE TRANSISTOR CQ.J(\IC. FA X ^ 201 ^ 6 75 58 83 139-385 * 0u,8lde N V 4 N J area ca|l T O LL F R EE 800-526-4581


    OCR Scan     		PDF NPWTO-111 fl35a Tfidf\l515T0R 2N4115 2N4116 2N5002 2N5004 2N5083 2N5084 2N5085 2N5284 FL-35A 2N5285

    CT 1975 sam

    Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
    Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the


    OCR Scan     		PDF 2SC4570 2SC4570-T1 CT 1975 sam transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking

    by 458 ph diode

    Abstract: No abstract text available
    Text: SIEMENS BUZ 72 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 72 Vbs 100 V h> 10 A RoSion Package Ordering Code 0.2 ß TO-220 AB C67078-S1313-A2 Maximum Ratings Parameter Symbol Continuous drain current Values b


    OCR Scan     		PDF O-220 C67078-S1313-A2 by 458 ph diode

    lm 458 ic

    Abstract: tip624
    Text: GaAs IRED a PHOTO-TRANSISTOR TLP624,-2,-4 T L P 6 2 4 P R O G R A M M A B L E CONTROLLERS AC/DC-INPUT M O D U LE TELEC O M M U N IC A TIO N Th e T O S H IB A T L P6 2 4 , -2 and -4 consist of a g alliu m arsenide infrared em ittin g diode op tically coupled to a photo-transistor.


    OCR Scan     		PDF TLP624 TLP624-2 TLP624-4 fr29dll TIP624) lm 458 ic tip624

    smd transistor marking code XC

    Abstract: XC SMD MARKING
    Text: B S S 169 I nf ine on technologies Preliminary Data SIPMOS Small-Signal Transistor • N channel • Depletion mode • High dynamic resistance Type ^DS BSS 169 100 V 0.12 A ñDS on Package Marking Ordering Code 12Q SOT-23 SFs Q67000-S322 Maximum Ratings


    OCR Scan     		PDF OT-23 Q67000-S322 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T smd transistor marking code XC XC SMD MARKING

    Untitled

    Abstract: No abstract text available
    Text: 1 ^ 3 3 -1 3 ' Philips Components RZ3135B28W Data sheet status Product specification date of Issue June 1992 NPN Silicon planar epitaxial microwave power transistor • 7110ûBt> ODMbSTG bôE « P H I N SbE D PHILIPS INTERNATIONAL _ D E S C R IP T IO N


    OCR Scan     		PDF RZ3135B28W 7110flZb

    2N1479

    Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786
    Text: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863


    OCR Scan     		PDF O-39/TO-5 D00D1SS 515TQft 2N1479 2N1480 2N1481 2N1482 2N1700 2N5784 2N5785 2N5781 2N5782 2N5786

    ALY TRANSISTOR

    Abstract: 40349 40327 ka025 20100 2N4866 BFE 75A transistor 160v 1.5a pnp transistor ALY 2N1479
    Text: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863


    OCR Scan     		PDF O-39/TO-5 D00D1SS 515TQft 2N1479 2N1480 2N1481 2N1482 2N1700 2N5784 2N5785 ALY TRANSISTOR 40349 40327 ka025 20100 2N4866 BFE 75A transistor 160v 1.5a pnp transistor ALY