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    TRANSISTOR B 1185 Search Results

    TRANSISTOR B 1185 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR B 1185 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    433MHZ amplifier 1w

    Abstract: IS-54 MAX2601 MAX2601ESA MAX2602 MAX2602ESA IM325
    Text: 19-1185; Rev 2; 5/97 KIT ATION EVALU E L B AVAILA 3.6V, 1W RF Power Transistors for 900MHz Applications _Applications _Features ♦ Low Voltage: Operates from 1 Li-Ion or 3 NiCd/NiMH Batteries ♦ DC-to-Microwave Operating Range


    Original     		PDF 900MHz 900MHz MAX2602) MAX2601ESA MAX2602ESA MAX2602E/D MAX2601/MAX2602 101mm 004in. 433MHZ amplifier 1w IS-54 MAX2601 MAX2601ESA MAX2602 MAX2602ESA IM325

    433MHZ amplifier 1w

    Abstract: rfc 433mhz circuit RF POWER TRANSISTOR IS-54 MAX2601 MAX2601ESA MAX2602 MAX2602ESA RF transistors with s-parameters
    Text: 19-1185; Rev 3; 9/08 KIT ATION EVALU LE B A IL A AV 3.6V, 1W RF Power Transistors for 900MHz Applications The MAX2601/MAX2602 are RF power transistors optimized for use in portable cellular and wireless equipment that operates from three NiCd/NiMH cells or one Li-Ion


    Original     		PDF 900MHz MAX2601/MAX2602 IS-54) 29dBm -28dBc MAX2601 MAX2602 MAX2601/MAX2602 433MHZ amplifier 1w rfc 433mhz circuit RF POWER TRANSISTOR IS-54 MAX2601ESA MAX2602ESA RF transistors with s-parameters

    S11850-1106

    Abstract: S11851-1106 TD-40 H2048
    Text: CCD image sensors S11850-1106 S11851-1106 Improved etaloning characteristics, Constant element temperature control The S11850/11851-1106 are back-thinned CCD image sensors designed for spectrometers. Two types consisting of a low noise type S11850-1106 and high-speed type (S11851-1106) are available with improved etaloning characteristics. The S11850/11851-1106 offer nearly flat spectral response characteristics with high quantum efficiency from the


    Original     		PDF S11850-1106 S11851-1106 S11850/11851-1106 S11850-1106) S11851-1106) KMPD1132E01 S11851-1106 TD-40 H2048

    Untitled

    Abstract: No abstract text available
    Text: CCD image sensors S11850-1106 S11851-1106 Improved etaloning characteristics, Constant element temperature control The S11850/11851-1106 are back-thinned CCD image sensors designed for spectrometers. Two types consisting of a low noise type S11850-1106 and high-speed type (S11851-1106) are available with improved etaloning characteristics. The S11850/11851-1106 offer nearly flat spectral response characteristics with high quantum efficiency from the


    Original     		PDF S11850-1106 S11851-1106 S11850/11851-1106 S11850-1106) S11851-1106) KMPD1132E02

    Untitled

    Abstract: No abstract text available
    Text: CCD image sensors S11850-1106 S11851-1106 Improved etaloning characteristics, Constant element temperature control The S11850/11851-1106 are back-thinned CCD image sensors designed for spectrometers. Two types consisting of a low noise type S11850-1106 and high-speed type (S11851-1106) are available with improved etaloning characteristics. The S11850/11851-1106 offer nearly flat spectral response characteristics with high quantum efficiency from the


    Original     		PDF S11850-1106 S11851-1106 S11850/11851-1106 S11850-1106) S11851-1106) KMPD1132E01

    ph 4148 zener diode

    Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
    Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS


    Original     		PDF DN-40 74ABT126 74ABT2240 X3G-BZX84-C7V5 X3G-BZX84-C9V1 ph 4148 zener diode philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148

    PCF7952

    Abstract: pcf7944 BGY270 PCF7944AT ON769 ON961 TDA10086HT pch7970 PCF7341 OH191
    Text: Philips Semiconductors, Inc. Product Discontinuation Notice DN50 Exhibit A December 31, 2003 SEE DN50 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.


    Original     		PDF VP22480-3 VP22480-5 VP22530-2 PCF7952 pcf7944 BGY270 PCF7944AT ON769 ON961 TDA10086HT pch7970 PCF7341 OH191

    PCF7931AS

    Abstract: PCF7935AS PCF79730S-3851 PCF7931 PCF7935 PCF7931XP/C PCF79730S pcf79735S PHILIPS PCF7935AS TDA4859ps
    Text: Philips Semiconductors Product Discontinuations Notice DN44 December 31, 2000 SEE DN44 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.


    Original     		PDF 87C528 X3A-KTY181/1 X3A-OH155 PCF7931AS PCF7935AS PCF79730S-3851 PCF7931 PCF7935 PCF7931XP/C PCF79730S pcf79735S PHILIPS PCF7935AS TDA4859ps

    shockley diode

    Abstract: ccd sensor star tracker shockley diode application diode shockley sun tracking sensors photodiodes shockley diode datasheet Laser power supply abstract Alcatel Microelectronics image sensor star tracker shockley
    Text: Total Dose Effects on CMOS Active Pixel Sensors J. Bogaerts, B. Dierickx Imec, Kapeldreef 75, 3001 Leuven, Belgium ABSTRACT Co60 irradiations have been carried out on test structures for the development of CMOS Active Pixel Sensors APS that can be used in a radiation environment. The basic mechanisms that may cause failure are presented. Ionization induced damage


    Original     		PDF 25-keV shockley diode ccd sensor star tracker shockley diode application diode shockley sun tracking sensors photodiodes shockley diode datasheet Laser power supply abstract Alcatel Microelectronics image sensor star tracker shockley

    tda8362b

    Abstract: OM8384J OM8383S TDA8363C msc 1697 BGY252 tda9155 PHILIPS OM8383S tda5331t BGY262
    Text: Philips Semiconductors Product Discontinuation Notice DN45 June 30, 2001 SEE DN45 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.


    Original     		PDF 1N4003ID 1N4005G 1N4006G 30-Jun-02 30-Jun-01 30-Jun-01 31-Dec-01 tda8362b OM8384J OM8383S TDA8363C msc 1697 BGY252 tda9155 PHILIPS OM8383S tda5331t BGY262

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    E2p 96 transistor

    Abstract: BFS17 BFS17A MSB003
    Text: Philips Sem iconductors iH 7 1 1 Q f l2 b 0 O b '"! 2 2 5 L7b I B PH I N Product specification NPN 3 GHz wideband transistor £ BFS17A TYP. MAX. PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope. PIN It is intended for a wide range of RF applications such as TV tuners.


    OCR Scan     		PDF 711Dflgb BFS17A MSB003 E2p 96 transistor BFS17

    transistor B 1184

    Abstract: 2SD1762 b 1185
    Text: Transistors Power Transistor 50V, 3A 2SD1760/2SD1864/2SD1762 •F e a tu re s 1) ^External dim ensions (Units: mm) LOW VcE(sat). VcE(sat) = 0.5V (Typ.) (Ic / I b = 2A/0.2A) 2) Com plem ents the 2S B 1184/2S B 1243/2S B 1185. • S tru c tu re Epitaxial planar type


    OCR Scan     		PDF 2SD1760/2SD1864/2SD1762 1184/2S 1243/2S 96-214-D57) 2SD1760 2SD1864 2SD1762 transistor B 1184 b 1185

    transistor B 1184

    Abstract: BFW30 transistor b 1185 philips BFW30
    Text: Product specification Philips Semiconductors NPN 2 GHz wideband transistor P H I L IP S I N T E R N A T I O N A L DESCRIPTION * 7 ^ 3 /"S SbE D • BFW30 '? 711Gfl2b O O M b O E b 172 « P H I N PINNING NPN transistor in a TO-72 metal envelope, with Insulated electrodes


    OCR Scan     		PDF BFW30 7110flSb transistor B 1184 BFW30 transistor b 1185 philips BFW30

    transistor B502

    Abstract: 2SD1760 2SB11
    Text: Transistors Power Transistor 50V, 3A 2 S 1 7 6 0 / 2 S D D 1 8 6 4 / 2 S •F e a tu re s 1) 1 7 6 2 D •E x te rn a l dimensions (Units: mm) LOW VcE(sat). VcE(sat) = 0 .5 V (Ic / I b (Typ.) = 2A/0.2A) 2) Complements the 2SB11 8 4 /2SB 1243/2SB 1185. 2SD1760


    OCR Scan     		PDF 2SD1760 2SD1864 2SB11 1243/2SB 2SD1760) 2SD1864) 10Sec 10OOSec transistor B502 2SD1760

    Untitled

    Abstract: No abstract text available
    Text: 19-1185; Rev 2 ; 5/97 3. 6V, 1 W R F P o w e r T r a n s i s t o r s for 900M H z A p p lic a tio n s The MAX2601 is a high-perform ance silicon bipolar RF p o w e r tra n s is to r. T he M A X 2 6 0 2 in c lu d e s a h ig h perform ance silicon bipolar RF power transistor, and a


    OCR Scan     		PDF MAX2601 MAX2601/MAX2602 MAX2601/MAX2602

    433MHZ amplifier 1w

    Abstract: transistor a 2601
    Text: 19-1185; Rev 2; 5/97 A l i l X I V M 3.6V, 1W RF P o w er Transistors fo r 900M H z A p p licatio n s The MAX2601 is a high-performance silicon bipolar RF po w e r tra n s is to r. The M AX2602 in c lu d e s a h ig h performance silicon bipolar RF power transistor, and a


    OCR Scan     		PDF MAX2601/MAX2602 IS-54) 29dBm -28dBc MAX2601 AX2602 MAX2601/MAX2602 433MHZ amplifier 1w transistor a 2601

    transistor b 1185

    Abstract: transistor B 1184 SIPC36AN10 SIPC25AN20 SIPC36AN05
    Text: SIPMOS Chip-Produkte/SIPMOS Die Products SIPMOS Power Transistor Dice Die type Recommended source bond wire diameter1 |im Die topology Page 0.018 SIPC36AN05 500 x 2 PH 1185 ^ D S m a x ) ^ D S |o n )m a x V Q 50 100 0.045 SIPC36AN10 500 PH 1185 200 0.120


    OCR Scan     		PDF SIPC36AN05 SIPC36AN10 SIPC25AN20 SIPC36AN20 SIPC25AN40 SIPC36AN40 SIPC36AN40F SIPC36N50F SIPC42AN50 SIPC25AN50 transistor b 1185 transistor B 1184

    transistor 1201 1203 1205

    Abstract: 500W TRANSISTOR AUDIO AMPLIFIER tda2050 bridge amplifier circuits buh41 remote control encoder decoder tda7294 220v 300w ac regulator circuit BUH313 TDA7294 12v TDA282
    Text: ALPHANUMERICAL INDEX Type Function Number Page Number AVS08 V fH Automatic Mains Selector 110/220V AC for SMPS < 200W 937 AVS10 Automatic Mains Selector (110/220V AC) for SMPS < 3CI0W 943 / Automatic Mains Selector (110/220V AC) for SMPS < 500W 949 v / Automatic Voltage Switch (SMPS < 300W ).


    OCR Scan     		PDF AVS08 AVS10 110/220V TEA6420J TEA6422 TEA6425 TEA6430 TEA7605 transistor 1201 1203 1205 500W TRANSISTOR AUDIO AMPLIFIER tda2050 bridge amplifier circuits buh41 remote control encoder decoder tda7294 220v 300w ac regulator circuit BUH313 TDA7294 12v TDA282

    BFG55A

    Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
    Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


    OCR Scan     		PDF LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60

    E2p 93 transistor

    Abstract: E2p 28 transistor 1 307 329 082 E2p 49 transistor BFS17 BFS17A
    Text: Philips Sem iconductors m ^ 5 3 ^ 3 1 □DE5£5c1 TTS BIAPX N AMER PHILIPS/DISCRETE NPN 3 GHz wideband transistor DESCRIPTION fc,7E Product specification J> ^ BFS17A PINNING NPN transistor in a plastic SOT23 envelope. PIN It is intended for a wide range of RF


    OCR Scan     		PDF BFS17A E2p 93 transistor E2p 28 transistor 1 307 329 082 E2p 49 transistor BFS17 BFS17A

    transistor B 1184

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology.


    OCR Scan     		PDF BUK9618-30 SQT404 transistor B 1184

    LS 2027 audio amp

    Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
    Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3


    OCR Scan     		PDF

    Mosfet FTR 03-E

    Abstract: mt 1389 fe 2SD122 dtc144gs low noise Darlington Transistor DTC114EVA DTC143EF V/65e9 transistor transistor 2SC337
    Text: h 7 > y ^ £ / T ra n sisto rs h 7 > v * £ IÜ á q — J W / T r a n s is t o r s S u m m a ry • POWER MOSFET Application Part No 2SK1976 V dss V 2SK2176 Package Typ (Q ) V gs (V) Page Id (A) 450 5 30 1.0 10 2.5 TO-220FP 88 60 10 30 0 08 10 5 TO-220FP


    OCR Scan     		PDF 2SK1976 2SK2095 2SK2176 O-220FP 2SA785 2SA790 2SA790M 2SA806 Mosfet FTR 03-E mt 1389 fe 2SD122 dtc144gs low noise Darlington Transistor DTC114EVA DTC143EF V/65e9 transistor transistor 2SC337