TRANSISTOR AS PLANAR PIP Search Results

TRANSISTOR AS PLANAR PIP Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR AS PLANAR PIP Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Transistor SMD SOT363 SC70 Abstract: Transistor SMD SOT363 SC70 SC88 TRANSISTOR SMD CODE PACKAGE SOT363 DMX DECODER IC SOT343R reset transistor SOT363 PBLS4004Y BFG310W/XR PBLS4003V RF SMD transistors pnp Text: New MultiMarket Products Quarterly highlights Semiconductors VOLUME 4 In this issue: P 1 PIP212-12M Integrated DC/DC converter powertrain solution • ISSUE 1 MARCH 2005 ■ Welcome to the latest issue of Philips’ New MultiMarket Products – Quarterly highlights.	Original	PDF	PIP212-12M BCM847BS BCM857BS PBLS15xx PBLS40xx P89LPC9102 P89LPC9103 Transistor SMD SOT363 SC70 Transistor SMD SOT363 SC70 SC88 TRANSISTOR SMD CODE PACKAGE SOT363 DMX DECODER IC SOT343R reset transistor SOT363 PBLS4004Y BFG310W/XR PBLS4003V RF SMD transistors pnp
TEMIC K153P Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910 Text: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2	Original	PDF	WN1053 WN1087-18R WN1087-TR1 WN1090 WN1125 WN1142 WN1158-TA WN1165-TR1 WN1170 WN934 TEMIC K153P TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
all transistor book Abstract: mcd760 free transistor equivalent book free transistor equivalent book download MCD761 all transistor data sheet book download free transistor and ic equivalent data transistor number code book FREE transistor data book free free download transistor and ic equivalent data Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D259 BLS3135-50 Microwave power transistor Product specification Supersedes data of 1999 Aug 16 2003 Apr 15 Philips Semiconductors Product specification Microwave power transistor BLS3135-50 FEATURES PINNING - SOT422A	Original	PDF	M3D259 BLS3135-50 BLS3135-50 OT422A BLS313550 all transistor book mcd760 free transistor equivalent book free transistor equivalent book download MCD761 all transistor data sheet book download free transistor and ic equivalent data transistor number code book FREE transistor data book free free download transistor and ic equivalent data
transistor rf m 9860 Abstract: E5560 da5276 immobilizer chip car alarm remote control transistor U2535B M44C260 immobilizer transponder automotive Immobilizer U426B Text: Automotive Safety and Convenience Data Book 1996 TELEFUNKEN Semiconductors Table of Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	PDF	M44C260 Q1/96 transistor rf m 9860 E5560 da5276 immobilizer chip car alarm remote control transistor U2535B M44C260 immobilizer transponder automotive Immobilizer U426B
Siemens Ferrite n67 Abstract: Siemens Ferrite n67 RM ferrite n67 n27 ferrite FERRITES N67 Siemens Ferrite n27 u93 SIEMENS n87, U93 high power FERRITE TRANSFORMER n87 N49 Switching Siemens Ferrite n27 RM Text: Jürgen Hess Inductors for distributed power supplies In modern power electronics, distributed power supply concepts are progressively replacing singleconverter topologies. With new core shapes and “highfrequency” ferrite materials from Siemens Matsushita	Original	PDF
d 1047 Abstract: sot443a Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D034 PZ1418B30U NPN microwave power transistor Product specification Supersedes data of 1997 Feb 19 1997 Nov 13 Philips Semiconductors Product specification NPN microwave power transistor PZ1418B30U PINNING - SOT443A	Original	PDF	M3D034 PZ1418B30U 01-Jul-98) d 1047 sot443a
IP4220CZ6 Abstract: PBLS2003D PBLS2002D at mega 48 microcontroller P89LPC9401 SC16IS7xx esd protection analog inputs lpc2103 PBLS6002D 80C51 BTA201 Text: In this issue P1 IP4220CZ6 - Dual ESD protection IC for USB 2.0 P2 AUP family - Advanced Ultra-low Power CMOS logic P3 BTA201 series - 1 A Hi-Com three-quadrant triacs P3 P89LPC9401 - 8-bit microcontroller with 32 segment x 4 LCD driver P4 LPC2103/02/01 - Small, ultra-lowcost 32-bit ARM7 microcontrollers P5 PBLSxxxxD series - BISS Loadswitches in SOT457 SC-74 P6 SC16IS7xx - I2C / SPI to UART bridge ICs	Original	PDF	IP4220CZ6 BTA201 P89LPC9401 LPC2103/02/01 32-bit OT457 SC-74) SC16IS7xx PBLS2003D PBLS2002D at mega 48 microcontroller esd protection analog inputs lpc2103 PBLS6002D 80C51
mosfet base induction heat circuit Abstract: mitsubishi sic MOSFET power IGBT MOSFET GTO SCR diode skiip 33 ups 063 IGCT mitsubishi igbt induction heating generator Cree SiC MOSFET SiC BJT zvs zcs induction heating igbt Heatsink For stud devices - Semikron Text: High Heat Flux Applications in Power Electronics Scott G. Leslie Chief Technologist Powerex Inc Youngwood PA High Heat Flux Applications in Power Electronics 2005 1 Power Switching Capacity VA Power Semiconductor Device Power Switching Capacity & Application Map	Original	PDF
mosfet based power inverter project Abstract: MS 1307 mosfet mosfet ms 1307 mitsubishi sic MOSFET igbt based high frequency inverter 10KV SiC NATIONAL IGBT Mitsubishi SiC IPM module "silicon carbide" FET home made inverter Text: Present PresentStatus StatusAnd AndFuture FutureProspects Prospectsof ofSiC SiCPower PowerDevices Devices Contributors : Gourab Majumdar Chief Engineer, Power Device Works, Mitsubishi Electric Corporation, Japan John Donlon Senior Application Engineer, Powerex Inc., U.S.A.	Original	PDF
SMD TRANSISTOR KATALOG Abstract: Schalenkerne kaschke ferrite material transistor K2500 CAR IGNITION WITH IGBTS kaschke ferrite material K250 K800 kaschke pulse transformer K2008 k2500 Text: Dieses Handbuch ist als unverbindlicher Warenkatalog herausgegeben. Nachdruck - auch auszugsweise - und andere Vervielfältigungen sind nur mit unserer ausdrücklichen Zustimmung gestattet. Wir bitten um Ihr Verständnis, daß wir mit der Veröffentlichung zum Entwurf von Bauteilen, Anwendungsbeispielen und	Original	PDF
antifuse Abstract: actel act1 family ANTIFUSE-based actel antifuse programming technology Text: Back Actel and the Antifuse Page 1 of 5 Actel and the Antifuse • • • • • • • • Introduction Antifuse vs Memory-based Programmable Logic Antifuse Technology Evaluating Antifuse Alternatives User Benefits of Actel's PLICE Technology Future Directions in Antifuse Technology	Original	PDF
nmos transistor 0.35 um Abstract: P854 "vlsi technology" abstract for intel gelato FEM95 20VOLTS his 06 P856 Text: Intel’s 0.25 Micron, 2.0Volts Logic Process Technology A. Brand, A. Haranahalli, N. Hsieh, Y.C. Lin, G. Sery, N. Stenton, B.J. Woo California Technology and Manufacturing Group, Intel Corp. S Ahmed, M. Bohr, S. Thompson, S. Yang Portland Technology Development Group, Intel Corp.	Original	PDF
Fabrication process steps Abstract: advanced technology in embedded projects OC-768 edram dram structure edram nec 130 nm CMOS standard cell library Text: NEW ASIC PROCESS TECHNOLOGY MAKES EMBEDDED DRAM PRACTICAL CHOICE FOR HIGH-PERFORMANCE APPLICATIONS February 2003 The advantages of embedding large blocks of memory into a system-on-a-chip SoC ASIC have become increasingly clear in the face of growing performance demands for many	Original	PDF
SGS-Thomson ball grid array Abstract: CB35000 ISB35000 2M x 16 DPRAM signal path designer io out put buffer predriver Text: CB35000 SERIES  HCMOS STANDARD CELLS PRELIMINARY DATA FEATURES • ■ ■ ■ ■ ■ ■ 0.5 micron triple layer metal HCMOS5S process featuring retrograde well technology, low resistance salicided active areas, polysilicide gates and thin metal oxide.	Original	PDF	CB35000 SGS-Thomson ball grid array ISB35000 2M x 16 DPRAM signal path designer io out put buffer predriver

256K DPRAM Abstract: CB45000 ST20 programmable schmitt trigger tristate nand gate Text: CB45000 SERIES  HCMOS6 STANDARD CELLS FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 0.35 micron 5 layer metal HCMOS6 process, retrograde well technology, low resistance salicided active areas and polysilicide gates. 3.3 V optimized transistor with 5 V I/O interface capability	Original	PDF	CB45000 256K DPRAM ST20 programmable schmitt trigger tristate nand gate
2N6137 Abstract: unijunction application note Text: 2N6137 PUTs Military, Planar, TO-18, Hermetic / - a s ' - o FEATURES • Available as JAN and JANTX types per MIL standard 19500/493 • — to -f-125’ 0 Temperature Range for Timing and Oscillator Circuits • l , < l V A a t T = -55»C I , > 40*A at T = +125'C	OCR Scan	PDF	2N6137 2N6I37 MA02172 2N6137 unijunction application note
IAO5 Sharp Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071 Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The	OCR Scan	PDF	Q60103- thS10 to3530 to4600 to4600 IAO5 Sharp free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
transistor marking JB Abstract: A301 A306 KRA301 KRA302 KRA303 KRA304 KRA305 KRA306 Text: KRA301KRA306 EPITAXIAL PLANAR PNP TRANSISTOR _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • • • • With Built-in Bias Resistors. Simplify Circuit Design.	OCR Scan	PDF	KRA301 KRA306 KRA301 KRA302 KRA303 KRA304 KRA305 KRA306 KRA303 KRA304 transistor marking JB A301 A306
MSC1002 Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition	OCR Scan	PDF	28Vdc MSC1002 AVIA c cube IC CD 4440 amplifier circuit diagram
transistor 2SB 367 Abstract: Power Transistors SIT sit transistor Text: 2SD2211/2SD1918F5 b ÿ > ' y X £ /Transistors 2 S D 2 2 1 1 I f c E C 2 5 U l 9 1 O r 5 f ^ 4 r y 7 / ^ l / - ^ N P N b ? > y Z $ Epitaxial Planar NPN Silicon Transistor iSJiîS^^JiSififfl/Low Freq. Power Amp. * W f i ri'ÜEI/'Dim ensions Unit : mm 1) i o i i l l i J £ T '^ 5 o	OCR Scan	PDF	2SD2211 2SD2211/2SD1918F5 /2SD1918F5 transistor 2SB 367 Power Transistors SIT sit transistor
2N2857 Abstract: 2n2857 UHF transistor common base amplifier 2n2857 common base amplifier Text: File No. 61 R F Pow e r T r a n s is t o r s Solid State Division 2N2857 RCA-2N2857 i s a d o u b l e - d i f f u s e d e p ita x ia l planar t r a n s i s t o r of the s i l ic o n n-p-n type. I t is e x tre m ely u s e f u l in 1 o w - n o i s e - amp 1 i f i e r , o s c i l l a t o r , a n d c o n	OCR Scan	PDF	2N2857 HCA-2N2857 2N2857 2n2857 UHF transistor common base amplifier 2n2857 common base amplifier
cp 035 sanyo Abstract: 2sa1196 2SC3859 la 1001 sanyo transistor npn d 2058 2SA1496 iso sanyo Sanyo marking S2106 TRANSISTORS SANYO Text: SANYO SEMICONDUCTOR CORP SSE D 7=^7071, 2SA1496, 2SC3859 000733D 4 • T -3 7 - / 3 3 5 - / [ P N P /N P N Epitaxial Planar Silicon Transistors 2018A Switching Applications with Bias Resistance R1=10k£2 VË21QÔA Applications . Switohing circuits, inverter circuits, interface circuits, driver citrcuits.	OCR Scan	PDF	2SA1496, 2SC3859 S2106A 707ti 000733D T-37-/3 10kohms 2SA1196 2SA1496 2SC3859 cp 035 sanyo 2sa1196 la 1001 sanyo transistor npn d 2058 2SA1496 iso sanyo Sanyo marking S2106 TRANSISTORS SANYO
long range Phototransistor Detector 880nm Abstract: IR Phototransistor Detector 880nm xenon linear flash lamps varistor xf 030 pnp phototransistor IR LED and photodiode heart rate optocoupler with schmitt trigger input h11c optocoupler Silicon bilateral switch phototransistor ultraviolet Text: SYSTEMS DESIGN CONSIDERATIONS EMITTER AND DETECTOR SY S T E M S Light, Irradiance and Effectiveness When the word “ light” is used in this discussion instead of “ electromagnetic radiation,” it does not refer to just the visible part of the spectrum, but to that part of the spectrum where silicon light	OCR Scan	PDF
IR sensor LFN Abstract: lfn photodiode TUR varistor IR detector LFN IR LED and photodiode heart rate scr firing circuit schematic diagram using optocoupler led and phototransistor simple circuit Triacs form factors TRIACS EQUIVALENT LIST ge optoelectronics Text: SYSTEMS DESIGN CONSIDERATIONS EMITTER AND DETECTOR SYSTEMS Light, Irradiance and Effectiveness W hen the word “ light” is used in this discussion instead of ‘ ‘electromagnetic radiation,” it does not refer to just the visible part of the spectrum, but to that part o f the spectrum where silicon light	OCR Scan	PDF

TRANSISTOR AS PLANAR PIP Search Results

TRANSISTOR AS PLANAR PIP Result Highlights (5)

TRANSISTOR AS PLANAR PIP Datasheets Context Search

Transistor SMD SOT363 SC70

TEMIC K153P

all transistor book

transistor rf m 9860

Siemens Ferrite n67

d 1047

IP4220CZ6

mosfet base induction heat circuit

mosfet based power inverter project

SMD TRANSISTOR KATALOG

antifuse

nmos transistor 0.35 um

Fabrication process steps

SGS-Thomson ball grid array

256K DPRAM

2N6137

IAO5 Sharp

transistor marking JB

MSC1002

transistor 2SB 367

2N2857

cp 035 sanyo

long range Phototransistor Detector 880nm

IR sensor LFN