M54563FP
Abstract: No abstract text available
Text: <TRANSISTOR ARRAY> M54563FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M54563FP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN NC transistors. This semiconductor integrated circuit performs high
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M54563FP
500mA
M54563FP
500mA)
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DARLINGTON TRANSISTOR ARRAY
Abstract: No abstract text available
Text: <TRANSISTOR ARRAY> M54562FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M54562FP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit performs high
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M54562FP
500mA
M54562FP
500mA)
20P2N-A
DARLINGTON TRANSISTOR ARRAY
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M54562FP
Abstract: No abstract text available
Text: <TRANSISTOR ARRAY> M54562FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M54562FP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN NC transistors. This semiconductor integrated circuit performs high
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M54562FP
500mA
M54562FP
500mA)
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Untitled
Abstract: No abstract text available
Text: <TRANSISTOR ARRAY> M54563FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M54563FP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit performs high
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M54563FP
500mA
M54563FP
500mA)
20P2N-A
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BJT IC Vce
Abstract: NPN Transistor Pair HFA3134 npn tr array pspice high frequency transistor npn 8 transistor array pspice model MM3134 525E
Text: HFA3134 8.5GHz NPN Matched Transistor Pair SPICE Model June 1998 MM3134 Introduction Parameters Not Modeled This application note describes the SPICE transistor model for the bipolar devices that comprise the HFA3134, Ultra High Frequency Transistor Array. This array is fabricated with
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HFA3134
MM3134
HFA3134,
BJT IC Vce
NPN Transistor Pair
npn tr array
pspice high frequency transistor
npn 8 transistor array
pspice model
MM3134
525E
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MOTOROLA transistor 413
Abstract: transistor br 5 n 60 CR820
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information CR820 The RF Line High Frequency Complementary Pair Transistor Array HIGH FREQUENCY COMPLEMENTARY PAIR TRANSISTOR ARRAY NPN/PNP SILICON . . . designed for use as an output device in very fast video am plifier circuits. The CR820
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OCR Scan
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CR820
CR820
244D0
MOTOROLA transistor 413
transistor br 5 n 60
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zener diode 10.5k
Abstract: DARLINGTON TRANSISTOR ARRAY M54525AGP DIODE 85c
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54525AGP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION M54525AGP is seven-circuit Darlington transistor array with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.
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M54525AGP
500mA
M54525AGP
500mA
zener diode 10.5k
DARLINGTON TRANSISTOR ARRAY
DIODE 85c
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M54525AGP
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54525AGP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION M54525AGP is seven-circuit Darlington transistor array with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.
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M54525AGP
500mA
M54525AGP
500mA
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HFA3134
Abstract: npn 8 transistor array
Text: HFA3134 8.5GHz NPN Matched Transistor Pair SPICE Model TM Application Note June 1998 MM3134 Introduction Parameters Not Modeled This application note describes the SPICE transistor model for the bipolar devices that comprise the HFA3134, Ultra High Frequency Transistor Array. This array is fabricated with
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HFA3134
MM3134
HFA3134,
npn 8 transistor array
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M54525AGP
Abstract: No abstract text available
Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54525AGP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION M54525AGP is seven-circuit Darlington transistor array with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.
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M54525AGP
500mA
M54525AGP
500mA
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M54537FP
Abstract: M54537P
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54537P/FP 7-UNIT 350mA TRANSISTOR ARRAY DESCRIPTION M54537P and M54537FP are seven-circuit transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with
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M54537P/FP
350mA
M54537P
M54537FP
350mA)
250mA)
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M54519P
Abstract: M54519FP IC M54519P
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54519P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54519P and M54519FP are seven-circuit Darlington transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current
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M54519P/FP
400mA
M54519P
M54519FP
400mA)
IC M54519P
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H3101B
Abstract: HFA3101B HFA3101 HFA3101B96 HFA3101BZ HFA3101BZ96 STD-020C UPA101 gilbert cell sum IC 7812 pin configuration
Text: HFA3101 Data Sheet September 2004 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while
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HFA3101
HFA3101
10GHz)
FN3663
UPA101
H3101B
HFA3101B
HFA3101B96
HFA3101BZ
HFA3101BZ96
STD-020C
UPA101
gilbert cell sum
IC 7812 pin configuration
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HFA3101
Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ 920mhz
Text: HFA3101 Data Sheet File Number 3663.4 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while
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HFA3101
HFA3101
10GHz)
RF NPN POWER TRANSISTOR C 10-12 GHZ
920mhz
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18P4G
Abstract: 20P2N-A M63807FP M63807KP M63807P
Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63807P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63807P/FP/KP are eight-circuit Single transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with
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M63807P/FP/KP
300mA
M63807P/FP/KP
300mA)
18P4G
20P2N-A
M63807FP
M63807KP
M63807P
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M54516P
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54516P 5-UNIT 500mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54516P is five-circuit Darlington transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.
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M54516P
500mA
M54516P
500mA)
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NPN DARLINGTON TRANSISTOR ARRAY
Abstract: 300 W npn darlington power transistors M54522WP Transistor Array
Text: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54522WP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54522WP is an eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current
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M54522WP
400mA
M54522WP
400mA)
Jul-2011
NPN DARLINGTON TRANSISTOR ARRAY
300 W npn darlington power transistors
Transistor Array
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18P4G
Abstract: 20P2N-A M63805FP M63805KP M63805P
Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63805P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63805P/FP/KP are eight-circuit Single transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with
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M63805P/FP/KP
300mA
M63805P/FP/KP
300mA)
18P4G
20P2N-A
M63805FP
M63805KP
M63805P
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54531WP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54531WP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current
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M54531WP
400mA
M54531WP
BVCEO40V)
400mA)
16P4X
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M63806KP
Abstract: 18P4G 20P2N-A M63806FP M63806P
Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63806P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63806P/FP/KP are eight-circuit Single transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with
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M63806P/FP/KP
300mA
M63806P/FP/KP
300mA)
M63806KP
18P4G
20P2N-A
M63806FP
M63806P
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M54517P
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54517P 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54517P is seven-circuit Darlington transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.
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M54517P
400mA
M54517P
400mA)
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M54585FP
Abstract: 24 "transistor array"
Text: <TRANSISTOR ARRAY> M54585FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SINK TYPE DESCRIPTION M54585FP is eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current
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M54585FP
500mA
M54585FP
500mA)
24 "transistor array"
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M54539P
Abstract: M54539
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54539P 6-UNIT 700mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54539P six-circuit transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.
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M54539P
700mA
M54539P
700mA)
M54539
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Untitled
Abstract: No abstract text available
Text: <TRANSISTOR ARRAY> M54585FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SINK TYPE DESCRIPTION M54585FP is eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current
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M54585FP
500mA
M54585FP
500mA)
20P2N-A
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