2SC4617
Abstract: SMD310
Text: MOTOROLA Order this document by 2SC4617/D SEMICONDUCTOR TECHNICAL DATA 2SC4617 Preliminary Information NPN Silicon General Purpose Amplifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT This NPN transistor is designed for general purpose amplifier applications.
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2SC4617/D
2SC4617
OT-416/SC
7-inch/3000
2SC4617/D*
2SC4617
SMD310
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Untitled
Abstract: No abstract text available
Text: HN3G01J TOSHIBA TRANSISTOR SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR HN3G01J High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications Unit in mm Absolute Maximum Ratings Ta = 25°C
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HN3G01J
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UPA509TA
Abstract: uPA50 MARKING UV N-Channel Silicon Junction Field Effect Transistor uPA509
Text: DATA SHEET µ PA509TA NPN EPITAXIAL SILICON TRANSISTOR N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR HIGH FREQUENCY AMPLIFIER, AM HIGH FREQUENCY AUDIO FREQUENCY AMPLIFIER APPLICATION FEATURES PACKAGE DRAWING Unit: mm • Composite type J-FET and NPN Transistor
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PA509TA
SC-74A
UPA509TA
uPA50
MARKING UV
N-Channel Silicon Junction Field Effect Transistor
uPA509
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2SC4617
Abstract: SMD310
Text: ON Semiconductort 2SC4617 Product Preview NPN Silicon General Purpose Amplifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-416/SC–90 package
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2SC4617
OT-416/SC
7-inch/3000
r14525
2SC4617/D
2SC4617
SMD310
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2SC2945
Abstract: QK SOT89 2SC2954 mark qk sot
Text: DATA SHEET SILICON TRANSISTOR 2SC2954 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC2954 is an NPN epitaxial silicon transistor disigned for Unit: mm low noise wide band amplifier and buffer amplifier of OSC, for VHF
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2SC2954
2SC2954
2SC2945
QK SOT89
mark qk sot
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philips ferroxcube 4c6
Abstract: Philips Application Note ECO6907 Design of H.F. Wideband Power Transformers ferroxcube 4C6 toroid core philips toroid 4c6 ECO6907 4C6 toroid NCO8602 4c6 philips 14 x 9 x 5mm ECO7703
Text: APPLICATION NOTE A wideband power amplifier 25 − 110 MHz with the MOS transistor BLF245 NCO8602 Philips Semiconductors A wideband power amplifier (25 − 110 MHz) with the MOS transistor BLF245 CONTENTS 1 SUMMARY 2 INTRODUCTION 3 DESIGN OF THE AMPLIFIER
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BLF245
NCO8602
SCA57
philips ferroxcube 4c6
Philips Application Note ECO6907
Design of H.F. Wideband Power Transformers
ferroxcube 4C6 toroid core
philips toroid 4c6
ECO6907
4C6 toroid
NCO8602
4c6 philips 14 x 9 x 5mm
ECO7703
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d1117
Abstract: D111 2SA1988 MP-88
Text: DATA SHEET Silicon Transistor 2SA1988 PNP SILICON TRANSISTOR POWER AMPLIFIER DESCRIPTION The 2SA1988 is PNP Silicon Power Transistor that designed for audio frequency power amplifier. FEATURES • High Voltage VCEO = –200 V • DC Current Gain hFE = 70 to 200
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2SA1988
2SA1988
MP-88
d1117
D111
MP-88
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NTE194
Abstract: No abstract text available
Text: NTE194 Silicon NPN Transistor Audio Power Amplifier Description: The NTE194 is a silicon NPN amplifier transistor packaged in a standard TO92 case. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V
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NTE194
NTE194
100MHz
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C151
Abstract: C202 RS21501 RS23301 RS23603
Text: PRODUCT SUMMARY RS23301: Heterojunction Bipolar Transistor Power Amplifier For Personal Handyphone Systems APPLICATIONS DESCRIPTION • PHS handsets The RS23301 Heterojunction Bipolar Transistor HBT Power Amplifier (PA) is part of Skyworks' Personal Handyphone
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RS23301:
RS23301
03140A
C151
C202
RS21501
RS23603
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Untitled
Abstract: No abstract text available
Text: NTE76 Silicon NPN Transistor Broadband CATV Amplifier Description: The NTE76 is an NPN transistor in a TO117 type case designed to be utilized in broadband linear amplifier circuitry such as CATV trunk, bridger, and line extender amplifiers. Features: D High Gain−Bandwidth Product: fT = 1.5GHz
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NTE76
NTE76
216MHz
260MHz
50dBmV,
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NTE76
Abstract: No abstract text available
Text: NTE76 Silicon NPN Transistor Broadband CATV Amplifier Description: The NTE76 is an NPN transistor in a TO117 type case designed to be utilized in broadband linear amplifier circuitry such as CATV trunk, bridger, and line extender amplifiers. Features: D High Gain−Bandwidth Product: fT = 1.5GHz
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NTE76
NTE76
-50dB
216MHz
260MHz
50dBmV,
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. PNP Silicon General Purpose Amplifier Transistor MSB1218A-RT1 PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC – 70/SOT–323 package
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MSB1218A-RT1
70/SOTâ
inch/3000
MSB1218A-RT1â
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2N3819
Abstract: BC237 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2SC4617 Preliminary Information NPN Silicon General Purpose Amplifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-416/SC–90 package which is designed for
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OT-416/SC
7-inch/3000
2SC4617
SURFAC218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
2N3819
BC237
BCY72
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Untitled
Abstract: No abstract text available
Text: RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Application Note November 1996 Introduction [ /Title AN93 15.1 /Subject (RF Amplifier Design Using HFA30 46, HFA30 96, HFA31 27, HFA31 28 Transistor Arrays ) /Autho r () /Keywords
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HFA3046,
HFA3096,
HFA3127,
HFA3128
AN9315
HFA30
HFA31
HFA3046/3096/3127/3128
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Untitled
Abstract: No abstract text available
Text: NS2029M3T5G PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT−723 package which is designed for low power surface mount applications, where board
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NS2029M3T5G
OT-723
NS2029M3/D
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Untitled
Abstract: No abstract text available
Text: NS2029M3T5G PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT−723 package which is designed for low power surface mount applications, where board
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NS2029M3T5G
NS2029M3/D
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BF245 A spice
Abstract: BF245 spice electronic power generator using transistor BF245A spice BF245 BF245 B spice BF245 TRANSISTOR transistor BF245 Fet BF245 BF245 spice model
Text: Analog Electronics I Laboratory Exercise 2 FET Amplifier Aim of the exercise The aim of this laboratory exercise is to become familiar with operation of simple single FET transistor amplifier. Exercise illustrates transistor polarization, frequency characteristics and
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100kHz
BF245 A spice
BF245 spice
electronic power generator using transistor
BF245A spice
BF245
BF245 B spice
BF245 TRANSISTOR
transistor BF245
Fet BF245
BF245 spice model
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top marking code F9
Abstract: 723 voltage reference 2sa202
Text: 2SA2029M3T5G PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT−723 package which is designed for low power surface mount applications, where board
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2SA2029M3T5G
OT-723
2SA2029M3/D
top marking code F9
723 voltage reference
2sa202
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Untitled
Abstract: No abstract text available
Text: 2SA2029M3T5G PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT−723 package which is designed for low power surface mount applications, where board
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2SA2029M3T5G
2SA2029M3/D
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NTM2222a
Abstract: NTM2907A
Text: SILICON TRANSISTOR NTM2222A GENERAL PURPOSE AMPLIFIER, HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION The NTM2222A is designed fo r general purpose amplifier and high speed switching applications, especially Hybrid Integrated Circuit.
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NTM2222A
NTM2222A
NTM2907A.
2N2222A.
NTM2907A
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by 2SC4617/D SEMICONDUCTOR TECHNICAL DATA 2SC4617 Preliminary Information NPN Silicon General Purpose Amplifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT This NPN transistor is designed for general purpose amplifier applications.
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2SC4617/D
2SC4617
T-416/SC
7-inch/3000
OT-416/SC-90
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2N3055 equivalent transistor NUMBER
Abstract: Y2w TRANSISTOR 2n3055 motor control circuits schematic diagram audio power amplifier using 2n3055 2N3055 equivalent 2N3055 diagram with power supply 2N3055 transistor equivalent transistor Y2W ICL8063 circuit diagram equivalent transistor 2n3055
Text: 01E 10753 3875081 G E SOLID STATE D ICL8063 Power Transistor Driver/Amplifier GENERAL DESCRIPTION FEATURES The ICL8063 is a unique monolithic power transistor driv er and amplifier that allows construction of minimum chip power amplifier systems. It includes built in safe operating
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ICL8063
ICL8063
10kHz
ICHB510/8520/8530
2N3055 equivalent transistor NUMBER
Y2w TRANSISTOR
2n3055 motor control circuits
schematic diagram audio power amplifier using 2n3055
2N3055 equivalent
2N3055 diagram with power supply
2N3055 transistor equivalent
transistor Y2W
ICL8063 circuit diagram
equivalent transistor 2n3055
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KTB2510
Abstract: KTD1510 33 j PH
Text: SEMICONDUCTOR TECHNICAL DATA KTD1510 TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER DARLINGTON TRANSISTOR. FEATURES • Complementary to KTB2510. • Recommended for 60W Audio Amplifier Output Stage. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage
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KTD1510
KTB2510.
KTB2510
KTD1510
33 j PH
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LSE B9
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2SC4617 Prelim inary Inform ation NPN Silicon G eneral Purpose A m plifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT This NPN transistor is designed for general purpose amplifier applications.
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2SC4617
OT-416/SC-90
7-inch/3000
LSE B9
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