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    TRANSISTOR AMPLIFIER 3 GHZ Search Results

    TRANSISTOR AMPLIFIER 3 GHZ Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR AMPLIFIER 3 GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC5604

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5604 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE AMPLIFIER 3-PIN LEAD-LESS MINIMOLD FEATURES • High-gain transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • fT = 25 GHz “UHS0” Ultra High Speed Process technology adopted


    Original     		PDF 2SC5604 S21e2 2SC5604-T3 2SC5604

    2SC4703-T1

    Abstract: NE46234 2SC4703 2SC470-3
    Text: NPN SILICON RF TRANSISTOR NE46234 / 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The NE46234 / 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage


    Original     		PDF NE46234 2SC4703 2SC4703 OT-89) dBV/75 PU10339EJ01V1DS 2SC4703-T1 2SC470-3

    SCA-16

    Abstract: gaas Low Noise Amplifier
    Text: SCA-16 Product Description DC-3 GHz, Cascadable GaAs HBT MMIC Amplifier Sirenza Microdevices’ SCA-16 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases


    Original     		PDF SCA-16 SCA-16 28dBm. 28dBm EDS-102425 gaas Low Noise Amplifier

    Untitled

    Abstract: No abstract text available
    Text: SCA-16 Product Description DC-3 GHz, Cascadable GaAs HBT MMIC Amplifier Sirenza Microdevices’ SCA-16 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases


    Original     		PDF SCA-16 28dBm. SCA-16 EDS-102425

    Untitled

    Abstract: No abstract text available
    Text: SCA-5 Product Description DC-3 GHz, Cascadable GaAs HBT MMIC Amplifier Sirenza Microdevices’ SCA-5 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases


    Original     		PDF 28dBm. 29dBm EDS-102420

    SCA-15

    Abstract: No abstract text available
    Text: SCA-15 Product Description DC-3 GHz, Cascadable GaAs HBT MMIC Amplifier Sirenza Microdevices’ SCA-15 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases


    Original     		PDF SCA-15 SCA-15 27dBm. 27dBm EDS-102424

    Philips Application Note ECO6907

    Abstract: AN98032 BD135 CURVES ECO7703 BD136 SMD TRANSISTOR COE82101 bd136 equivalent mosfet HF amplifier AN98030 HF power amplifier blf177
    Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 3 Power amplifier design POWER AMPLIFIER DESIGN NOTE TO SECTION 3 3.1 Classes of operation and biasing 3.1.1 For clarity in equations, identifiers such as R1, +jB2, −jX3 in drawings are written as


    Original     		PDF

    nec 2501

    Abstract: ic nec 2501 nec RF package SOT89 2SC4703 2501 NEC 2SC4703-T1 2SC470-3
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage VCE = 5 V .


    Original     		PDF 2SC4703 2SC4703 OT-89) PU10339EJ01V1DS nec 2501 ic nec 2501 nec RF package SOT89 2501 NEC 2SC4703-T1 2SC470-3

    ic nec 2501

    Abstract: nec 2501 2501 NEC 2SC4703-T1 2SC4703 2SC470-3 nec RF package SOT89
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage VCE = 5 V .


    Original     		PDF 2SC4703 2SC4703 OT-89) PU10339EJ01V0DS ic nec 2501 nec 2501 2501 NEC 2SC4703-T1 2SC470-3 nec RF package SOT89

    Untitled

    Abstract: No abstract text available
    Text: SCA-6 Product Description DC-3 GHz, Cascadable GaAs HBT MMIC Amplifier Sirenza Microdevices’ SCA-6 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases breakdown


    Original     		PDF 30dBm. EDS-102421

    BFR90 transistor

    Abstract: BFR90
    Text: BFR90 VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 3 B 1 C 3 • High power gain • Low noise figure • High transition frequency 2 E 2 Applications 1 RF amplifier up to GHz range specially for wide band antenna amplifier. 19039


    Original     		PDF BFR90 D-74025 24-Aug-04 BFR90 transistor BFR90

    BFR92 transistor

    Abstract: bfr92
    Text: BFR92 VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features • High power gain • Low noise figure • High transition frequency C 3 2 1 1 B Applications RF amplifier up to GHz range specially for wide band antenna amplifier. 3 E 2 18822


    Original     		PDF BFR92 OT-23 D-74025 24-Aug-04 BFR92 transistor bfr92

    bfr96ts

    Abstract: No abstract text available
    Text: BFR96TS VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 3 B 1 C 3 • High power gain • Low noise figure • High transition frequency 2 E 2 Applications 1 RF amplifier up to GHz range specially for wide band antenna amplifier. 19039


    Original     		PDF BFR96TS BFR96TS D-74025 25-Aug-04

    BFR96TS

    Abstract: No abstract text available
    Text: BFR96TS VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 3 B 1 C 3 • High power gain • Low noise figure • High transition frequency 2 E 2 Applications 1 RF amplifier up to GHz range specially for wide band antenna amplifier. 19039


    Original     		PDF BFR96TS BFR96TS D-74025 08-Sep-04

    Untitled

    Abstract: No abstract text available
    Text: BFR93 VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features • High power gain • Low noise figure • High transition frequency C 3 2 1 1 B Applications RF amplifier up to GHz range specially for wide band antenna amplifier. 3 E 2 18822


    Original     		PDF BFR93 OT-23 D-74025 24-Aug-04

    Untitled

    Abstract: No abstract text available
    Text: SCA-7 Product Description DC-3 GHz, Cascadable GaAs HBT MMIC Amplifier Sirenza Microdevices’ SCA-7 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases breakdown


    Original     		PDF 24dBm. 12dBm EDS-102422

    Untitled

    Abstract: No abstract text available
    Text: SCA-7 Product Description DC-3 GHz, Cascadable GaAs HBT MMIC Amplifier Sirenza Microdevices’ SCA-7 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases breakdown


    Original     		PDF 24dBm. 24dBm EDS-102422

    Untitled

    Abstract: No abstract text available
    Text: BFR93 VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features • High power gain • Low noise figure • High transition frequency C 3 2 1 1 B Applications RF amplifier up to GHz range specially for wide band antenna amplifier. 3 E 2 18822


    Original     		PDF BFR93 OT-23 D-74025 08-Sep-04

    5343 transistor

    Abstract: EDS-102421
    Text: SCA-6 Product Description DC-3 GHz, Cascadable GaAs HBT MMIC Amplifier Sirenza Microdevices’ SCA-6 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases breakdown


    Original     		PDF 30dBm. 30dBm EDS-102421 5343 transistor

    Untitled

    Abstract: No abstract text available
    Text: BFR90A VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 3 B 1 C 3 • High power gain • Low noise figure • High transition frequency 2 E 2 Applications 1 RF amplifier up to GHz range specially for wide band antenna amplifier. 19039


    Original     		PDF BFR90A BFR90A BFR90AGELB-GS08 D-74025 30-Aug-04

    J51-20

    Abstract: BFR92 transistor
    Text: BFR92 VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features • High power gain • Low noise figure • High transition frequency C 3 2 1 1 B Applications RF amplifier up to GHz range specially for wide band antenna amplifier. 3 E 2 18822


    Original     		PDF BFR92 OT-23 D-74025 08-Sep-04 J51-20 BFR92 transistor

    Untitled

    Abstract: No abstract text available
    Text: BFR91 VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 3 B 1 C 3 • High power gain • Low noise figure • High transition frequency 2 E 2 Applications 1 RF amplifier up to GHz range specially for wide band antenna amplifier. 19039


    Original     		PDF BFR91 BFR91 D-74025 24-Aug-04

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC4093 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION The 2S C 4 0 9 3 is an NPN silicon epitaxial transistor designed for low PACKAGE DIMENSIONS Units: mm noise amplifier at VH F, U H F and C A TV band.


    OCR Scan     		PDF 2SC4093 4093-T S22e-FREQUENCY

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC4536 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2 S C 4 5 3 6 is designed for use in middle power, low distortion low noise figure RF amplifier. It features excellent linearity and large dynamic


    OCR Scan     		PDF 2SC4536