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    TRANSISTOR AL6 Search Results

    TRANSISTOR AL6 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR AL6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UD22K Preliminary DUAL TRANSISTOR DIGITAL TRANSISTOR BUILT-IN RESISTORS  DESCRIPTION The UTC UD22K is a dual transistor, including an NPN transistor and a PNP transistor.  FEATURES * Built-in bias resistors that implies easy ON/OFF applications.


    Original     		PDF UD22K UD22K UD22KG-AL6-R OT-363 QW-R221-020

    n24 transistor

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMDT8050S Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION „ The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE sat performance, and the transistor elements are


    Original     		PDF MMDT8050S MMDT8050S MMDT8050SL-AL6-R MMDT8050SG-AL6-R OT-363 MMDT8050SL-AL6-R QW-R218-012 n24 transistor

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMDT8150 Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION „ The UTC MMDT8150 is a Dual NPN epitaxial planar transistor. It has low VCE SAT performance and the transistor elements are


    Original     		PDF MMDT8150 MMDT8150 MMDT8150L-AL6-R MMDT8150G-AL6-R MMDT8150L-AL6-R OT-363 QW-R218-017

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UG9H Preliminary DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTORS  DESCRIPTION The UTC UG9H is a dual digital transistor, the transistor elements are independent and obviating interference, so the mounting cost and


    Original     		PDF OT-363 QW-R218-026

    transistor Al6

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UG9K DUAL TRANSISTOR COMPOUND TRANSISTORS UG9K „ DESCRIPTION As a compound transistor with resistor, the UTC UG9K is for switching application. „ FEATURES * Silicon epitaxial type * The internal tow transistor elements are independent.


    Original     		PDF OT-363 OT-363 QW-R218-008 transistor Al6

    transistor Al6

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3PP Preliminary DUAL TRANSISTOR COMPOSITE TRANSISTORS UT3PP DESCRIPTION „ As a composite transistor with resistor, the UTC UT3PP is for switching application. FEATURES „ * Silicon Epitaxial Type * The Internal Tow Transistor Elements are Independent.


    Original     		PDF OT-363 QW-R218-009 transistor Al6

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UG9K DUAL TRANSISTOR COMPOUND TRANSISTORS UG9K  DESCRIPTION As a compound transistor with resistor, the UTC UG9K is for switching application.  FEATURES * Silicon epitaxial type * The internal tow transistor elements are independent.


    Original     		PDF OT-363 QW-R218-008

    AL6 marking

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3PP Preliminary DUAL TRANSISTOR COMPOSITE TRANSISTORS UT3PP DESCRIPTION „ As a composite transistor with resistor, the UTC UT3PP is for switching application. FEATURES „ * Silicon Epitaxial Type * The Internal Tow Transistor Elements are Independent.


    Original     		PDF OT-363 OT-363 QW-R218-009 AL6 marking

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BC856AS Preliminary DUAL TRANSISTOR DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR  DESCRIPTION The UTC BC856AS is a dual PNP surface mount small signal transistor, it uses UTC’s advanced technology to provide customers


    Original     		PDF BC856AS BC856AS BC856ASG-AL6-R OT-363 QW-R206-108

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMDT3906 Preliminary PNP EPITAXIAL SILICON TRANSISTOR DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR „ DESCRIPTION The UTC MMDT3906 is a Dual PNP small signal surface mount transistor. It’s suitable for low power amplification and switch.


    Original     		PDF MMDT3906 MMDT3906 MMDT3906L-AL6-R MMDT3906G-AL6-R MMDT3906L-AL6-R OT-363 QW-R218-014

    free transistor and ic equivalent data

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMDT3906 Preliminary PNP EPITAXIAL SILICON TRANSISTOR DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR „ DESCRIPTION The UTC MMDT3906 is a Dual PNP small signal surface mount transistor. It’s suitable for low power amplification and switch.


    Original     		PDF MMDT3906 MMDT3906 MMDT3906L-AL6-R MMDT3906G-AL6-R MMDT3906L-AL6-R OT-363 QW-R218-014 free transistor and ic equivalent data

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMDT3946 Preliminary DUAL TRANSISTOR COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR „ DESCRIPTION The UTC MMDT3946 is a complementary NPN/PNP small signal surface mount transistor. It’s suitable for low power amplification and


    Original     		PDF MMDT3946 MMDT3946 MMDT3946L-AL6-R MMDT3946G-AL6-R MMDT3946L-AL6-R OT-363 QW-R218-015ues QW-R218-015

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMDT3904 NPN EPITAXIAL SILICON TRANSISTOR DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR  DESCRIPTION The UTC MMDT3904 is a dual NPN small signal surface mount transistor.  FEATURES * Suitable for Low Power Amplification and Switching


    Original     		PDF MMDT3904 MMDT3904 MMDT3904G-AL6-R OT-363 QW-R218-013

    sot26 sot363 transistor

    Abstract: transistor 9014 c a9014 C 9014 transistor 9014 equivalent B2E1 VCe-12V Equivalent Transistor c 9014
    Text: UNISONIC TECHNOLOGIES CO., LTD IMZ2A DUAL TRANSISTOR POWER MANAGEMENT DUAL TRANSISTOR „ FEATURES * Two a 9014 chip in a SMT package. „ EQUIVALENT CIRCUITS „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free IMZ2AL-AG6-R IMZ2AG-AG6-R IMZ2AL-AL6-R


    Original     		PDF OT-26 OT-363 QW-R215-002 sot26 sot363 transistor transistor 9014 c a9014 C 9014 transistor 9014 equivalent B2E1 VCe-12V Equivalent Transistor c 9014

    Untitled

    Abstract: No abstract text available
    Text: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor


    Original     		PDF LM96163 LM96163 2N3904,

    Untitled

    Abstract: No abstract text available
    Text: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor


    Original     		PDF LM96163 2N3904,

    2N3904

    Abstract: LM96163 LM96163C LM96163CISD LM96163CISDX QFN10 RLs6
    Text: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor


    Original     		PDF LM96163 LM96163 2N3904, 2N3904 LM96163C LM96163CISD LM96163CISDX QFN10 RLs6

    RTU620

    Abstract: No abstract text available
    Text: LM96163 LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology Literature Number: SNAS433C LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm® BJT Transistor Beta


    Original     		PDF LM96163 LM96163 SNAS433C RTU620

    Untitled

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC blE D • DSG433A 0GQb4Q3 flb2 ■ AL6R SERIES TPQ QUAD TRANSISTOR ARRAYS Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic


    OCR Scan     		PDF DSG433A 14-pin TPQ2222A TPQ3904 TPQ6427 TPQA06 TPQ2907A TPQ3906 TPQA55 TPQ5401

    B 773 transistor

    Abstract: 2N4403
    Text: ß. ' •- ALLE6R0 MICROSYSTEMS INC T3 D • QS0433ß QQQ3b71 4 ■ AL6R T -9 1-0 1 PROCESS ODA Process DDA PNP Small-Signal Transistor Process DDA is a double-diffused epitaxial planar silicon PNP transistor. It is designed for use as a lownoise, high-gain amplifier or as a medium-power


    OCR Scan     		PDF 50433A T-91-01 G50433Ã G003b72 T-91-01 -al77 B 773 transistor 2N4403

    ULN-2082A

    Abstract: ULN-2081 ULN2081A
    Text: ALLEGRO MICROSYSTEMS INC 8514019 SPRAGUE. 13 1 • Ü50433Ö S E M I C O N D S / ICS QQQ3ÔE1 ñ ■ AL6R 9 3 D 0 3 8 2 1 3> ULN-2081A AND ULN-2082A GENERAL-PURPOSE HIGH-CURRENT TRANSISTOR ARRAYS ULN-2081 A AND ULN -2082A GENERAL-PURPOSE HIGH-CURRENT TRANSISTOR ARRAYS


    OCR Scan     		PDF ULN-2081A ULN-2082A ULN-2081 -2082A ULN-2082A ULN2081A

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    A1396

    Abstract: No abstract text available
    Text: ALLE6R0 MICROSYSTEMS INC T3D 1> • 05D433Ö DD03743 3 ■ ALGR PROCESS YCA Process YCA NPN Small-Signal Transistor Process Y C A is a double-diffused epitaxial planar N PN silicon transistor designed for use in generalpurpose switching and amplifier circuits. It can oper­


    OCR Scan     		PDF 05G433A 1000mA 00090sa A1396

    Untitled

    Abstract: No abstract text available
    Text: AL LE GR O M I C R O S Y S T E M S INC T3 D WÊ 0 5 0 4 3 3 Ô O Ü Ü 3 7 b S 2 • AL6R T-91-01 P R O C E S S NJ42 Process NJ42 N-Channel Junction Field-Effect Transistor Process NJ42 is an N-channel junction field-effect transistor designed for use as a high-voltage, general-purpose amplifier in applications requiring the


    OCR Scan     		PDF T-91-01 00037bb