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    TRANSISTOR AL FM Search Results

    TRANSISTOR AL FM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR AL FM Datasheets Context Search

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    FMW5

    Abstract: UMW5N FMW5 T148 T148 T149 e26w npn transistor w5 7626 transistor
    Text: h7 > y UMW5N/FMW5 £ /Transistors UMW5N FMW5 ;i/ K h 7 > y * £ / D u a l M ini-Mold Transistor NPN Epitaxial Planar NPN Silicon Transistor — / Gener al Sm all S ig n al Am p. • W K ^siS /D im en sio n s Unit: mm 1) “ i- J U 2m<n h - ^ v ^ S r t S t U T i - ' S o


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    PDF g10mV. S10mV. FMW5 UMW5N FMW5 T148 T148 T149 e26w npn transistor w5 7626 transistor

    Untitled

    Abstract: No abstract text available
    Text: FF 150 R 12 KL Transistor Transistor Elektrische Eigenschaften Electrical properties Therm ische Eigenschaften Therm al properties 0,055 Rthjc DC, pro Baustein / per module DC, pro Baustein / per module 0,11 0,03 pro Baustein / per module 0,06 pro Baustein / per module


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    PDF R1200 FFrtOR12COKFf> 34032T? D002D45

    R1200

    Abstract: No abstract text available
    Text: FF 150 R 12 KL Transistor Transistor Elektrische Eigenschaften Electrical properties Therm ische Eigenschaften Therm al properties 0,055 Rthjc DC, pro Baustein / per module DC, pro Baustein / per module 0,11 0,03 pro Baustein / per module 0,06 pro Baustein / per module


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    PDF R1200 FFrtOR12COKFf> 34032T? D002D45

    Untitled

    Abstract: No abstract text available
    Text: FF 50 R 12 KL Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VcES Maximum rated values Therm ische Eigenschaften Therm al properties 0,155 "C/W Rthjc DC, pro Baustein / per module C/W DC, pro Baustein / per module


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    PDF 10-2I--

    kl2 t1 transistor

    Abstract: No abstract text available
    Text: FF 50 R 12 KL Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VcES Maximum rated values Therm ische Eigenschaften Therm al properties 0,155 "C/W Rthjc DC, pro Baustein / per module C/W DC, pro Baustein / per module


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    PDF 10-2I-- kl2 t1 transistor

    Untitled

    Abstract: No abstract text available
    Text: FF 300 R 06 KF 2 Therm ische Eigenschaften Therm al properties 0,05 DC, pro Baustein / per module 0,10 DC, pro Zweig / per arm pro Baustein / per module 0,03 RthCK 0,06 pro Zweig / per arm Transistor Transistor Elektrische Eigenschaften Electrical properties


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    PDF 3403HT7

    Untitled

    Abstract: No abstract text available
    Text: FF 200 R 06 KF 2 Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0,08 DC, pro Zweig / per arm 0,16 pro B au stein / per module 0,03 RthCK pro Zweig / per arm 0,06 Transistor Transistor Elektrische Eigenschaften Electrical properties


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    PDF FF500

    44t transistor

    Abstract: No abstract text available
    Text: FS 15 R 06 KFS Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte V ces Maximum rated values 600 V 15 A lc Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 2,27 ~*thJC DC, pro Zweig / per arm


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    Untitled

    Abstract: No abstract text available
    Text: FF 100 R 12 KF Therm ische Eigenschaften Therm al properties Rthjc DC, pro Baustein / per module 0,075 DC, pro Z w e ig / per arm 0,15 RthCK pro Baustein / per module 0,04 pro Zweig / per arm 0,08 Transistor Transistor Elektrische Eigenschaften Electrical properties


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    PDF R1200KF

    transistor KF

    Abstract: diode 182
    Text: FF 100 R 12 KF Therm ische Eigenschaften Therm al properties Rthjc DC, pro Baustein / per module 0,075 DC, pro Z w e ig / per arm 0,15 RthCK pro Baustein / per module 0,04 pro Zweig / per arm 0,08 Transistor Transistor Elektrische Eigenschaften Electrical properties


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    PDF R1200KF transistor KF diode 182

    Untitled

    Abstract: No abstract text available
    Text: FF 200 R 12 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Hochstzulässige W erte Maximum rated values V ces Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0 ,0 4 8 R th J C DC, pro Zweig / per arm


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    PDF R1300 FFM0R12KF2 12SPC,

    Untitled

    Abstract: No abstract text available
    Text: FS 100 R 06 KF 3 Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 600 V 100 A lc Therm ische Eigenschaften Therm al properties 0,047 :'C /W Rthjc DC, pro Baustein / per module DC, pro Zweig / per arm 0,280 C/W


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    Untitled

    Abstract: No abstract text available
    Text: FF 25 R 12 KF Therm ische Eigenschaften Therm al properties Rthjc DC, pro B austein/p e r module 0,25 0,5 DC, pro Zweig / per arm 0,06 RthCK pro Baustein /p e r module 0,12 Transistor Transistor Elektrische Eigenschaften Electrical properties H öchstzulässige W erte


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    PDF 34D32CI7

    Untitled

    Abstract: No abstract text available
    Text: FF 200 R 12 KF Therm al properties Therm ische Eigenschaften 0,044 C/W DC, pro Baustein / per module 0,088 C/W DC, pro Zweig / per arm 0,03 °C/W pro Baustein / per module 0,06 °C/W pro Zweig / per arm Transistor Transistor Elektrische Eigenschaften Electrical properties


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    Untitled

    Abstract: No abstract text available
    Text: FF 50 R 06 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values 600 V c es Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0,25 R th J C 0,50 DC, pro Zweig / per arm


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    PDF 3M035T7

    vqe 23 c

    Abstract: No abstract text available
    Text: FF 200 R 12 KF Therm al properties Therm ische Eigenschaften 0,044 C/W DC, pro Baustein / per module 0,088 C/W DC, pro Zweig / per arm 0,03 °C/W pro Baustein / per module 0,06 °C/W pro Zweig / per arm Transistor Transistor Elektrische Eigenschaften Electrical properties


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    ODD1173

    Abstract: FF200R06KF2 FF200R06KF FF500 15fis Scans-0031044 FF200R06
    Text: FF 200 R 06 KF 2 Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0,08 0,16 DC, pro Zweig / per arm 0,03 pro B a u ste in /p e r module 0,06 Transistor Transistor Elektrische Eigenschaften Electrical properties V CES Maximum rated values


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    PDF 00R600 FF20DN FF500 ODD1173 FF200R06KF2 FF200R06KF 15fis Scans-0031044 FF200R06

    Untitled

    Abstract: No abstract text available
    Text: FF 200 R 06 KF 3 Transistor Transistor Therm ische Eigenschaften Therm al properties 0,07 DC, pro Baustein / per moduie RthJC 0,14 DC, pro Z w e ig /p e r arm 0,03 pro Baustein / per moduie RthCK 0,06 pro Zweig / per arm Elektrische Eigenschaften Electrical properties


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    PDF FF2MR06KF3.

    kf 202 transistor

    Abstract: No abstract text available
    Text: FF 100 R 06 KF 3 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte V qes Maximum rated values 600 V 100 A le Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0,140 °C/W 0,280 C/W DC, pro Zweig / per arm


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    PDF 12EFC, kf 202 transistor

    25CC

    Abstract: No abstract text available
    Text: FS 50 R 06 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Therm ische Eigenschaften Therm al properties Rjhjc DC, pro B a u ste in /p e r module 0,084 °C/W DC, pro Zweig / per arm 0,5 °C/W Maximum rated values


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    PDF 3M032< 25CC

    TVR06

    Abstract: n50t
    Text: FZ 400 R 06 KF 2 Therm ische Eigenschaften Therm al properties Ftthjc DC, pro B a u ste in /p e rm o d u le 0,089 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties 0,03 pro Baustein / per module °C/W Maximum rated values VcE S 600


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    transistor 184

    Abstract: No abstract text available
    Text: FS 100 R 06 KF 2 Transistor Transistor Elektrische Eigenschaften 1E lectrical properties Hochstzulässige W erte V ces Maximum rated values 600 V 100 A Ic Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0,052 R th J C DC, pro Zweig / per arm


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    FF100R12KF2

    Abstract: No abstract text available
    Text: FF 100 R 12 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Therm ische Eigenschaften Therm al properties 0,095 3C/W Rthjc DC, pro Baustein / per module 0,19 DC/W DC, pro Zweig / per arm 0,04 C/W RthCK pro B a u ste in /p e r module


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    PDF FF100R12KF2

    Untitled

    Abstract: No abstract text available
    Text: FS 25 R 12 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Hochstzulässige W erte Maximum rated values V Therm ische Eigenschaften Therm al properties Rtwc DC, pro B a u ste in /p e r module 0,104 °C/W DC, pro Z w e ig /p e r arm


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