TRANSISTOR AH 2 Search Results

TRANSISTOR AH 2 Result Highlights (5)

Part	Manufacturer	Description
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR AH 2 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: 2SB1197K Transistor, PNP Features Dimensions Units : mm • available In SMT3 (SMT, SC-59) package • package marking: 2SB1197K; AH-*, where ★ is hFE code • 2SB1197K (SMT3) 1.9±0.2 low collector saturation voltage 0.96 a (2 )[ 2.4 V CE(sat) - “ ° - 5 v f o r	OCR Scan	2SB1197K SC-59) 2SB1197K; A/-50	PDF
la 7518 Abstract: TFK 450 BCW60C BCW60D BCW60 Text: G estem pelt m it: 'W BCW60A BCW 60B BCW60C BCW60D BCX70G BCX70H BC X70J BCX70K M a r k e d w ith : AA AB AC AD AG AH AJ AK BCW 60 * BCX 70 Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar A F Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen	OCR Scan	BCW60C BCW60D 200Hz la 7518 TFK 450 BCW60	PDF
Untitled Abstract: No abstract text available Text: na. TELEPHONE: 979 3782922 (212) 227-8008 FAX: (973) 3784880 20 STERN AVE. SPfllNQRELD, NEW JERSEY 07081 U.SA 2N4997 N-P-N SILICON TRANSISTOR AU JEDEC TO-92 DIMENSIONS AND NOTES ARE APPLICABLE AH pIMENilONi IN INCHII —MK- 0.010 (NOT! A) .• N —H o'«> + A^—i r~H_	Original	2N4997	PDF
LM114 Abstract: LM114D Monolithic Transistor Pair LM114A LM114AH LM114H alc100 Text: ïïM M m \ll LM114IH, LM114A/AH Dual NPN Monolithic Transistor GENERAL DESCRIPTION FEATURES These devices contain a pair of junction-isolated NPN transis tors fabricated on a single silicon substrate. This m onolithic structure makes possible extrem ely tig ht parameter matching	OCR Scan	LM114/H, LM114A/AH 300MHz 22MHz 10/iA l-125 LM114 LM114A, LM114D Monolithic Transistor Pair LM114A LM114AH LM114H alc100	PDF
ITCH725D Abstract: No abstract text available Text: TOSHIBA -CDISCRETE/OPTOJ- 9097250 TOSHIBA ^aHììln CDI S C R E T E / O P T O “H DeTJ B O T O S O 990 16647 D 0 1 L t 47 b DT-3Ì-I3 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2 S K 3 5 5 SILICON N CHANNEL MOS TYPE <7T-MOS ) TECHNICAL DATA INDUSTRIAL APPLICATIONS	OCR Scan	71-MOS 100nA ITCH725D	PDF
transistor Cd 18 p Abstract: ic MARKING FZ 2SA1759 7028 TRANSISTOR marking 7T transistor Text: 2SA1759 Transistor, PNP Features D im ensions Units : mm • av a ila b le in M P T 3 (M PT, S C -6 2 ) p a cka g e • p a c k a g e m arking: 2 S A 1 7 5 9 ; AH-*, w h ere ★ is hFE co d e • high breakdow n voltage, 2SA1759 (MPT3) V ceo = “ 400 V	OCR Scan	2SA1759 SC-62 transistor Cd 18 p ic MARKING FZ 2SA1759 7028 TRANSISTOR marking 7T transistor	PDF
2n7000 equivalent Abstract: transistor 2n7000 field effect transistor 2n7000 N-Channel Enhancement Mode Field Effect Transistor Transistor AH 10 equivalent of 2n7000 TRANSISTOR AH TRANSISTOR2N7000 Text: N-Channel Enhancement Mode Field Effect Transistor 2N7000 N-Channel Enhancement Mode Field Effect Transistor Features • • • • • High density cell design for low RDS ON Voltage controlled small signal switch Rugged and reliable High saturation current capability	Original	2N7000 MIL-STD-202G, 2N7000 2n7000 equivalent transistor 2n7000 field effect transistor N-Channel Enhancement Mode Field Effect Transistor Transistor AH 10 equivalent of 2n7000 TRANSISTOR AH TRANSISTOR2N7000	PDF
Untitled Abstract: No abstract text available Text: EPSON PF400-07 SCI7630M/C Series Switching Regulator I DESCRIPTION •Step-up Switching Regulator 1.5V 2.0, 2.2, 2.35, 2.4, 2.7, 2.8, 3.0, 3.1, 3.5, 3.7, 4.2 ,5.0V •L o w Operating Voltage(Min 0.9V) •Voltage Detecting function, Battery Back-up function	OCR Scan	PF400-07 SCI7630M/C SCI7363/7632/7635/7636/7639M/C) SCI7630M SCI7630M/C	PDF
VARTA 4006 Abstract: alkaline varta TRANSISTOR AH varta Transistor AH 10 LR6 varta varta alkaline alkaline varta 4006 Text: 4006 VARTA Industrial Data Sheet Recommended Application: Universal Type Designation Designation IEC System 4006 LR6 Zn-MnO2 Alkaline Shelf Life (Coding)* 5 years Nominal Voltage [V] Typical Capacity C [mAh] Permissible Temperature Range 1.5 2600 (discharge with high-resistance)	Original	10S/M VARTA 4006 alkaline varta TRANSISTOR AH varta Transistor AH 10 LR6 varta varta alkaline alkaline varta 4006	PDF
Untitled Abstract: No abstract text available Text: MMBTA63/64 SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. MAXIMUM RATINGS Ta=25°C DIM CHARACTERISTIC A B SYMBOL Collector-Base MMBTA63/64 Voltage C ollector-E m itter MMBTA63/64 Voltage Em itter-B ase Voltage	OCR Scan	MMBTA63/64	PDF
2N4400 Abstract: 2n4401 amplifier 2N4401 transistor 2N4400 2N4401 NPN transistor 2n4400 2N4401 Text: Small Signal General Purpose Transistors NPN 2N4400/2N4401 Small Signal General Purpose Transistors (NPN) Features • NPN Silicon Epitaxial Transistor for Switching and Amplifier Applications • RoHS Compliance TO-92 Mechanical Data Case: TO-92, Plastic Package	Original	2N4400/2N4401 MIL-STD-202G, 2N4400 2N4401 2n4401 amplifier 2N4401 transistor 2N4400 2N4401 NPN transistor 2n4400	PDF
LP298X Abstract: LM29XX variable voltage regulator LM317 LM3420 Regulated Power Supply Schematic Diagram lm317 LM1117 LM317 LM431 LMV431 LP2981 Text: Focus on Voltage Regulators Muna Acosta Applications Manager Standard Analog Products October 30, 2002 Good morning. Welcome to today's Web cast on voltage regulator. My name is Muna Acosta. I'm the Application Manager for the Standard Analog Group at National	Original		PDF
2n3904 Abstract: 2N3903 transistor 2N3904 plastic general purpose transistors npn Text: Small Signal General Purpose Transistors NPN 2N3903/2N3904 Small Signal General Purpose Transistors (NPN) Features • NPN Silicon Epitaxial Transistor for Switching and Amplifier Applications • RoHS Compliance TO-92 Mechanical Data Case: TO-92, Plastic Package	Original	2N3903/2N3904 MIL-STD-202G, 2N3903 2N3904 2N3903 transistor 2N3904 plastic general purpose transistors npn	PDF
2N2464 Abstract: transistor 2n2270 2N6369 D 756 transistor Text: GENERAL TRANSISTOR CORP 2ME D • BTaflODl 00QD074 0 ■ General Transistor Corporation "T 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 SMALL S IG N A L TRANSISTORS NPN General Purpose Typ» No,	OCR Scan	00QD074 100TT T0-102 2N2464 transistor 2n2270 2N6369 D 756 transistor	PDF

TRANSISTOR AH-16 Abstract: AH-16 transistor Transistor AH10 AH16 ah-16 AH16 transistor AH-16 npn TRANSISTOR AH-10 AH-16 on semiconductor AH MARKING SOT223 Text: BCP53T1 Series Preferred Devices PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.	Original	BCP53T1 OT-223 BCP56 inch/1000 BCP53T3 inch/4000 BCP53T1 BCP53 TRANSISTOR AH-16 AH-16 transistor Transistor AH10 AH16 ah-16 AH16 transistor AH-16 npn TRANSISTOR AH-10 AH-16 on semiconductor AH MARKING SOT223	PDF
TRANSISTOR AH-16 Abstract: AH MARKING SOT223 AH-16 on semiconductor AH-16 transistor AH16 SOT223 sot 223 marking code AH AH-16 npn TRANSISTOR AH-10 ah-16 AH16 transistor Text: BCP53T1 Series Preferred Devices PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.	Original	BCP53T1 OT-223 BCP56 inch/1000 BCP53T3 inch/4000 BCP53T1 BCP53-10T1 TRANSISTOR AH-16 AH MARKING SOT223 AH-16 on semiconductor AH-16 transistor AH16 SOT223 sot 223 marking code AH AH-16 npn TRANSISTOR AH-10 ah-16 AH16 transistor	PDF
Untitled Abstract: No abstract text available Text: Transistors Digital Transistor Common Emitter Dual Transistors U M G 2 N / F M 2 A G •F e a tu re s 1) Two DTC144E digital transistors in a UMT, SMT package. 2) M ounting co st and area can be cut in half. •S tru c tu re Epitaxial planar type NPN silicon transistor	OCR Scan	DTC144E 7fi26c 0D17nD	PDF
power 22E Abstract: BCX70GR TRANSISTOR AH BCX70 BCX70G BCX70H BCX70HR BCX70J BCX70JR BCX70K Text: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR BCX70 BCX70 ISSUE 2 FEBRUARY 95 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. TYP. Collector-Emitter Breakdown Voltage V(BR)CEO 45 5 Emitter-Base Breakdown Voltage	Original	BCX70 BCX70G 150oC 200Hz power 22E BCX70GR TRANSISTOR AH BCX70 BCX70G BCX70H BCX70HR BCX70J BCX70JR BCX70K	PDF
Multimeter dmm 850 Abstract: transistor number D 2498 Text: Low Cost Handheld DMM’s ߜ ߜ ߜ ߜ ߜ ߜ ߜ ߜ GS-Mark EN61010-1 Approval, Over-Voltage Category II 600 Vdc/Vac; Pollution Degree II Models: HHM26 and HHM28 have RS-232 Interface Safety Input Jacks Logic Probe Tester Models: HHM15, HHM20, HHM23 Temperature Measurement	Original	EN61010-1 HHM26 HHM28 RS-232 HHM15, HHM20, HHM23 HHM19, HHM21 HHM18 Multimeter dmm 850 transistor number D 2498	PDF
Untitled Abstract: No abstract text available Text: SAMSUNG SEMICONDUCTOR INC MMBTA13 l^ E 00 072c10 4 \| O J NPN EPITAXIAL SILICON TRANSISTOR _ L DARLINGTON AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage	OCR Scan	MMBTA13 OT-23 MMBT6427	PDF
Untitled Abstract: No abstract text available Text: S A M S UN G SEMICONDUCTOR INC 14E D I 7^4142 0007370 2 PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA64 T -2 9 -2 9 DARLINGTON TRANSISTOR • C ollector-Em itter Voltage: Vc*s =30V • C ollector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)	OCR Scan	MPSA64 625mW MPSA62	PDF
Untitled Abstract: No abstract text available Text: SAMSUNG SEMICONDUCTOR INC MPS6522 D \| 7*^4145 0007327 1 \| PNP EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: Veto =25V • Collector Dissipation: P c max =625mW A BSO LU TE MAXIMUM RATINGS (Ta=25°C) Characteristic	OCR Scan	MPS6522 T-29-21 625mW 2N3906	PDF
Untitled Abstract: No abstract text available Text: SAMSUNG SEMICONDUCTOR INC MMBT5086 14E D I 0007573 M \| PNP EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltape Emitter-Base Voltage Collector Current Collector Dissipation	OCR Scan	MMBT5086 OT-23	PDF
Untitled Abstract: No abstract text available Text: SAMSUNG SEMICONDUCTOR I NC 14E \| 711,4142 0007^^6 «1 \| T - t f - ? MMBTA63 PNP EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C C h aracteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage	OCR Scan	MMBTA63	PDF

TRANSISTOR AH 2 Search Results

TRANSISTOR AH 2 Result Highlights (5)

TRANSISTOR AH 2 Datasheets Context Search

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la 7518

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LM114

ITCH725D

transistor Cd 18 p

2n7000 equivalent

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VARTA 4006

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2N4400

LP298X

2n3904

2N2464

TRANSISTOR AH-16

TRANSISTOR AH-16

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power 22E

Multimeter dmm 850

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