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    TRANSISTOR AFZ Search Results

    TRANSISTOR AFZ Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR AFZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PILZ timer relay

    Abstract: plc wiring diagram Pilz AFZB PILZ relay electrical connection torque settings vde 0110 timer sps transistor 0V24V
    Text: Electronic Timer Relays Flashers AFZ B Technical details Electrical data Supply voltage Tolerance Output Output current Times Cycle duration Recovery time Repetition accuracy Voltage variation Temperature variation Mechanical data Max. cross-section of the ext. conductor


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    PDF NSG-D-2-285-01/01 PILZ timer relay plc wiring diagram Pilz AFZB PILZ relay electrical connection torque settings vde 0110 timer sps transistor 0V24V

    PILZ timer relay

    Abstract: electrical connection torque settings vde 0110 timer
    Text: Electronic Timer Relays Pulsers AFZ W Technical details Electrical data Supply voltage Tolerance Power consumption Output Output current Times Pulse time Timer relay in a housing for front panel mounting – pulse on switching on Recovery time Repetition accuracy


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    PDF NSG-D-2-286-08/00 PILZ timer relay electrical connection torque settings vde 0110 timer

    PILZ timer relay

    Abstract: sps transistor mm2 relay vde 0110 timer electrical connection torque settings PILZ relay electronic timer
    Text: Electronic Timer Relays Delay-on energisation AFZ A Technical details AFZ A Electrical data Supply voltage DC: 24 V Tolerance Power consumption Output Output current Times Reaction time Timer relay in a housing for frontpanel mounting-delay-on energisation


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    PDF NSG-D-2-284-08/00 PILZ timer relay sps transistor mm2 relay vde 0110 timer electrical connection torque settings PILZ relay electronic timer

    5 PIN AAAK IC

    Abstract: aabi AABF afz mosfet AFY SOT23 aaBO aabj transistor afr 22 aabp MAX1963
    Text: 19-3040; Rev 1; 5/04 Low-Input-Voltage, 300mA LDO Regulators with RESET in SOT and TDFN The MAX1963/MAX1976 low-dropout linear regulators operate from a +1.62V to +3.6V supply and deliver a guaranteed 300mA continuous load current with a low 100mV dropout. The high-accuracy ±0.5% output


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    PDF 300mA MAX1963/MAX1976 100mV MAX1963) MAX1976) T1433-1 T1433-2 5 PIN AAAK IC aabi AABF afz mosfet AFY SOT23 aaBO aabj transistor afr 22 aabp MAX1963

    aaBO

    Abstract: aabj reset IC sot23 aabi AABl sot23-6 aaak MAX1963 MAX1963ETT MAX1963EZT MAX1976
    Text: 19-3040; Rev 0; 10/03 Low-Input-Voltage, 300mA LDO Regulators with RESET in SOT and TDFN Features ♦ Low 1.62V Minimum Input Voltage ♦ Guaranteed 300mA Output Current ♦ ±1.5% Accuracy Over Load/Line/Temp ♦ Low 100mV Dropout at 300mA Load ♦ 2.2ms MAX1963 or 70ms (MAX1976)


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    PDF 300mA 100mV MAX1963) MAX1976) MAX1963EZT_ MO229 aaBO aabj reset IC sot23 aabi AABl sot23-6 aaak MAX1963 MAX1963ETT MAX1963EZT MAX1976

    sot23 mark code AAAM

    Abstract: AABJ TDFN 6 t633-2 aabo tdFN PACKAGE thermal resistance aabi aabc MAX1963 MAX1963ETT MAX1976
    Text: 19-3040; Rev 2; 5/07 Low-Input-Voltage, 300mA LDO Regulators with RESET in SOT and TDFN The MAX1963/MAX1976 low-dropout linear regulators operate from a +1.62V to +3.6V supply and deliver a guaranteed 300mA continuous load current with a low 100mV dropout. The high-accuracy ±0.5% output


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    PDF 300mA MAX1963/MAX1976 100mV MAX1963) MAX1976) T1433-1 T1433-2 sot23 mark code AAAM AABJ TDFN 6 t633-2 aabo tdFN PACKAGE thermal resistance aabi aabc MAX1963 MAX1963ETT MAX1976

    sot23-6 mark code AAAM

    Abstract: AFW SOT 23 AAAM SOT23-6 afz mosfet AFU SOT23-6 SOT23-6 PMOS sot23-6 aaak aabi sot23-6 mark code AABJ MAX1963EZT120
    Text: 19-3040; Rev 2; 5/07 Low-Input-Voltage, 300mA LDO Regulators with RESET in SOT and TDFN The MAX1963/MAX1976 low-dropout linear regulators operate from a +1.62V to +3.6V supply and deliver a guaranteed 300mA continuous load current with a low 100mV dropout. The high-accuracy ±0.5% output


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    PDF 300mA MAX1963/MAX1976 100mV MAX1963) MAX1976) sot23-6 mark code AAAM AFW SOT 23 AAAM SOT23-6 afz mosfet AFU SOT23-6 SOT23-6 PMOS sot23-6 aaak aabi sot23-6 mark code AABJ MAX1963EZT120

    SC70-4

    Abstract: ultra low voltage detector MAX6832 MAX6833 MAX6840
    Text: 19-2242; Rev 1; 1/02 Ultra-Low-Voltage SC70 Voltage Detectors and µP Reset Circuits These devices assert a reset signal whenever the VCC supply voltage declines below a preset threshold or whenever manual reset MR is asserted. Reset remains asserted for a fixed timeout delay after VCC has risen


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    PDF 210ms, MAX6832/MAX6835/MAX6838 MAX6833/ MAX6836/MAX6839 MAX6834/MAX6837X6832 MAX6840 MAX6832 SC70-4 ultra low voltage detector MAX6833 MAX6840

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


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    transistor a750

    Abstract: F240 transistor TIC 122 Transistor Germanium power tic 122
    Text: r. 2 S C D • f l S3 SbO S G0 G4 G7 b 1 H SIE6 PIMP Germanium RF Transistor - S I E M E N S AF240 AKTIENGESELLSCHAF fo r m ixe r and o sc illa to r sta g e s up to 9 0 0 M H z A F 24 0 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads


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    PDF AF240 TambS45 0004Q7A transistor a750 F240 transistor TIC 122 Transistor Germanium power tic 122

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    3TE445

    Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
    Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group


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    PDF FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159

    N1702

    Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
    Text: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961


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    PDF 2N34A 2N43A 2N44A 2N59A 2N59B 2N59C 2N60A 2N60B 2N60C 2N61A N1702 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922

    2N3303

    Abstract: T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175
    Text: Semiconductor Components Data Book 4 Transistors C o p y rig h t 1971 by T exas In s tru m e n ts L im ited . A ll R ig h ts R eserv ed . P rin te d in th e U n ite d K ingdom . T his b o o k , o r p arts th e re o f, m ay n o t be rep ro d u ce d in any


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    PDF Chiana56 2N3303 T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175

    CTX30203C04

    Abstract: MUR1100 LT1C70 LT1070 MBR360 snubber
    Text: uTECHNOLOGY n m . Application Note 39 February 1990 Parasitic Capacitance Effects in Step-Up Transformer Design Brian Huffman One of the most critical components in a step-up design like Figure 1 is the transformer. Transformers have para­ sitic components that can cause them to deviate from


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    PDF LT1070 LT1C70 CTX30203C04 MUR1100 MBR360 snubber

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


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    PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp

    AC127

    Abstract: CV7089 AC125 2SB415 OC71 ad161 cv8615 HJ17D ad142 2N3278
    Text: First Published P’ebruary, 1971 Reprinted, June 71 Reprinted, July 71 Reprinted, January 72 Reprinted, March 72 Reprinted, June 72 Reprinted, August 72 We invite all authors, whether new or well established, to submit manuscripts for pub­ lication. The manuscripts may deal with any


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    PDF 2N24A 2N34A 2N38A 2N43A 2N44A 2N59C 2N60A 2N61A 2N61B OC77-309, AC127 CV7089 AC125 2SB415 OC71 ad161 cv8615 HJ17D ad142 2N3278

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    APY12

    Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
    Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP


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    PDF Edition-1978) Ausgabe-1978) BS3934 SO-26 OT-114 NS371 APY12 BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    T35W

    Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
    Text: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,


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    PDF 10DB2P 10DB4P 10DB6P 180B6A T35W transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d