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    TRANSISTOR AF 245 Search Results

    TRANSISTOR AF 245 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR AF 245 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1436

    Abstract: ITR03612 ITR03613 ITR03614 ITR03615
    Text: Ordering number:ENN2456 PNP Epitaxial Planar Silicon Transistor 2SA1436 High hFE, AF Amplifier Applications Applications Package Dimensions • AF amplifier, various drivers, muting circuit. unit:mm 2003B Features [2SA1436] · Adoption of MBIT process. · High DC current gain hFE=500 to 1200 .


    Original     		PDF ENN2456 2SA1436 2003B 2SA1436] VEBO15V) 2SA1436 ITR03612 ITR03613 ITR03614 ITR03615

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Silicon Monolithic Bi-Polor Digital Integrated Circuit TD62783AP/F/AF TD62784AP/F/AF TD62783AP TD62784AP 8CH High Voltage Source Driver Product Description: These products are comprised of eight source current Transistor Arrays. These drivers are specifacally designed for flourescent


    Original     		PDF TD62783AP/F/AF TD62784AP/F/AF TD62783AP TD62784AP DIP18-P-300D: TD62783F/AF TD62784F/AF 500mA 400mA DIP-18pin

    2SA1436

    Abstract: ITR03612 ITR03613 ITR03614 ITR03615
    Text: Ordering number:ENN2456 PNP Epitaxial Planar Silicon Transistor 2SA1436 High hFE, AF Amplifier Applications Applications Package Dimensions • AF amplifier, various drivers, muting circuit. unit:mm 2003B Features [2SA1436] · Adoption of MBIT process. · High DC current gain hFE=500 to 1200 .


    Original     		PDF ENN2456 2SA1436 2003B 2SA1436] VEBO15V) 2SA1436 ITR03612 ITR03613 ITR03614 ITR03615

    2sa143

    Abstract: VEBO-15V 2SA1436 SAT800
    Text: Ordering number:EN2456 PNP Epitaxial Planar Silicon Transistor 2SA1436 High hFE, AF Amplifier Applications Applications Package Dimensions • AF amplifier, various drivers, muting circuit. unit:mm 2003A Features [2SA1436] · Adoption of MBIT process. · High DC current gain hFE=500 to 1200 .


    Original     		PDF EN2456 2SA1436 2SA1436] VEBO15V) SC-43 2sa143 VEBO-15V 2SA1436 SAT800

    TD62387APG

    Abstract: TD62388APG TD62386 DIP20 TD62386AFG TD62386APG TD62387AFG TD62388AFG
    Text: TD62386,387,388AP/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62386APG, TD62386AFG, TD62387APG TD62387AFG, TD62388APG, TD62388AFG 8 CH LOW INPUT ACTIVE DARLINGTON SINK DRIVER The TD62386APG, TD62386AFG, TD62387APG, TD62387AFG and TD62388APG, TD62388AFG are non−inverting transistor


    Original     		PDF TD62386 388AP/AF TD62386APG, TD62386AFG, TD62387APG TD62387AFG, TD62388APG, TD62388AFG TD62387APG TD62388APG DIP20 TD62386AFG TD62386APG TD62387AFG TD62388AFG

    Untitled

    Abstract: No abstract text available
    Text: TD62386,387,388AP/AF TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic TD62386AP,TD62386AF,TD62387AP TD62387AF,TD62388AP,TD62388AF 8 Ch Low Input Active Darlington Sink Driver The TD62386AP, TD62386AF, TD62387AP, TD62387AF and TD62388AP, TD62388AF are non−inverting transistor arrays,


    Original     		PDF TD62386 388AP/AF TD62386AP TD62386AF TD62387AP TD62387AF TD62388AP TD62388AF TD62386AP, TD62386AF,

    HBC807

    Abstract: HBC817
    Text: HI-SINCERITY Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2005.04.18 Page No. : 1/4 MICROELECTRONICS CORP. HBC807 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC807 is designed for switching and AF amplifier amplification suitable for driver


    Original     		PDF HE6830 HBC807 HBC807 OT-23 -800mA HBC817 200oC 183oC 217oC 260oC

    HSC1815

    Abstract: diode marking H2
    Text: HI-SINCERITY Spec. No. : HE6523 Issued Date : 1992.11.25 Revised Date : 2006.07.28 Page No. : 1/4 MICROELECTRONICS CORP. HSC1815 NPN Epitaxial Planar Transistor Description The HSC1815 is designed for use in driver stage of AF amplifier general purpose amplification.


    Original     		PDF HE6523 HSC1815 HSC1815 150oC 200oC 183oC 217oC 260oC 245oC 10sec diode marking H2

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6523 Issued Date : 1992.11.25 Revised Date : 2004.12.28 Page No. : 1/4 MICROELECTRONICS CORP. HSC1815 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC1815 is designed for use in driver stage of AF amplifier general purpose amplification.


    Original     		PDF HE6523 HSC1815 HSC1815 183oC 217oC 260oC

    HSA1015

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6512 Issued Date : 1992.11.25 Revised Date : 2006.07.27 Page No. : 1/4 MICROELECTRONICS CORP. HSA1015 PNP Epitaxial Planar Transistor Description The HSA1015 is designed for use in driver stage of AF amplifier and general purpose


    Original     		PDF HE6512 HSA1015 HSA1015 200oC 183oC 217oC 260oC 10sec

    A4Y MARK SOT-23

    Abstract: MARK A4B A4Y SOT23 HMBT1015 transistor a4y
    Text: HI-SINCERITY Spec. No. : HE6804 Issued Date : 1992.08.25 Revised Date : 2004.08.10 Page No. : 1/4 MICROELECTRONICS CORP. HMBT1015 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT1015 is designed for use in driver stage of AF amplifier and general purpose amplification.


    Original     		PDF HE6804 HMBT1015 HMBT1015 OT-23 200oC 183oC 217oC 260oC 245oC A4Y MARK SOT-23 MARK A4B A4Y SOT23 transistor a4y

    HM965

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE9511 Issued Date : 1996.04.12 Revised Date : 2004.12.21 Page No. : 1/4 MICROELECTRONICS CORP. HM965 NPN EPITAXIAL PLANAR TRANSISTOR Description The HM965 is designed for use as AF output amplifier and glash unit. SOT-89 Features


    Original     		PDF HE9511 HM965 HM965 OT-89 183oC 217oC 260oC

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6512 Issued Date : 1992.11.25 Revised Date : 2004.12.28 Page No. : 1/4 MICROELECTRONICS CORP. HSA1015 PNP EPITAXIAL PLANAR TRANSISTOR Description The HSA1015 is designed for use in driver stage of AF amplifier and general purpose amplification.


    Original     		PDF HE6512 HSA1015 HSA1015 183oC 217oC 260oC

    HE6805

    Abstract: HMBT1815 transistor C4G sot-23 MARK C4G
    Text: HI-SINCERITY Spec. No. : HE6805 Issued Date : 1992.08.25 Revised Date : 2004.08.13 Page No. : 1/4 MICROELECTRONICS CORP. HMBT1815 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT1815 is designed for use in driver stage of AF amplifier and general purpose amplification.


    Original     		PDF HE6805 HMBT1815 HMBT1815 OT-23 200oC 183oC 217oC 260oC 245oC HE6805 transistor C4G sot-23 MARK C4G

    SD965

    Abstract: equivalent transistor HSD965 HSD965 HSD965 PIN he6537 transistor HSD965 HE6537 data sheet PT10M
    Text: HI-SINCERITY Spec. No. : HE6537 Issued Date : 1992.11.25 Revised Date : 2004.11.30 Page No. : 1/4 MICROELECTRONICS CORP. HSD965 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD965 is suited for use as AF output amplifier and flash unit. TO-92 Absolute Maximum Ratings


    Original     		PDF HE6537 HSD965 HSD965 183oC 217oC 260oC SD965 equivalent transistor HSD965 HSD965 PIN he6537 transistor HSD965 HE6537 data sheet PT10M

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6507 Issued Date : 1992.12.16 Revised Date : 2004.08.09 Page No. : 1/5 MICROELECTRONICS CORP. HSA733 PNP EPITAXIAL PLANAR TRANSISTOR Description The HSA733 is designed for use in driver stage of AF amplifier applications. TO-92 Absolute Maximum Ratings


    Original     		PDF HE6507 HSA733 HSA733 183oC 217oC 260oC

    HBC817

    Abstract: hbc8
    Text: HI-SINCERITY Spec. No. : HE6831 Issued Date : 1994.01.25 Revised Date : 2008.01.30 Page No. : 1/4 MICROELECTRONICS CORP. HBC817 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC817 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages.


    Original     		PDF HE6831 HBC817 HBC817 OT-23 183oC 217oC 260oC 10sec hbc8

    HBC848

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6843 Issued Date : 1994.07.29 Revised Date : 2008.01.30 Page No. : 1/4 MICROELECTRONICS CORP. HBC848 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC848 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.


    Original     		PDF HE6843 HBC848 HBC848 OT-23 Diss60 183oC 217oC 260oC 10sec

    HBC548

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HA200103 Issued Date : 2001.10.01 Revised Date : 2004.07.16 Page No. : 1/4 MICROELECTRONICS CORP. HBC548 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC548 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.


    Original     		PDF HA200103 HBC548 HBC548 183oC 217oC 260oC

    HE6851

    Abstract: HBC858
    Text: HI-SINCERITY Spec. No. : HE6851 Issued Date : 1994.09.02 Revised Date : 2004.09.01 Page No. : 1/4 MICROELECTRONICS CORP. HBC858 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC858 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.


    Original     		PDF HE6851 HBC858 HBC858 OT-23 183oC 217oC 260oC HE6851

    HBC807

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2004.08.30 Page No. : 1/4 MICROELECTRONICS CORP. HBC807 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC807 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages.


    Original     		PDF HE6830 HBC807 HBC807 OT-23 200oC 183oC 217oC 260oC 245oC

    HBC847

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6827 Issued Date : 1993.11.28 Revised Date : 2004.09.01 Page No. : 1/4 MICROELECTRONICS CORP. HBC847 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC847 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.


    Original     		PDF HE6827 HBC847 HBC847 OT-23 183oC 217oC 260oC

    transistor tic 106

    Abstract: BCY66 AF200 transistor tic 106 N tic 105 Q60203-Y66 tic 246 h tic 246 tic 245
    Text: BCY66 NPN Transistor for low-noise AF pre-stages BCY 66 is an epitaxial NPN silicon planar transistor in a case 18 A 3 DIN 41 876 TO-18 . The collector is electrically connected to the case. The transistor has been designed for especially low-noise AF pre-stages.


    OCR Scan     		PDF BCY66 BCY66 60203-Y transistor tic 106 AF200 transistor tic 106 N tic 105 Q60203-Y66 tic 246 h tic 246 tic 245

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 2 456 No.2456 _ 2SA1436 PNP Epitaxial Planar Silicon Transistor I High-hpE^ AF Amp Applications Applications . AF amp, various drivers, muting circuit Features . Adoption of MBIT process . High DC current gain hpE=500 to 1200


    OCR Scan     		PDF 2SA1436 VEBOi15V)