Chip Resistors Parasitic capacitance
Abstract: Infineon IGBT Rogowski AN-2006 AN-2006-01 Rogowski Coil application series connection of igbt transistor AE IGBT DRIVER application note AN2006-01
Text: Application Note Page 1 Department: AIM PMD ID AE Date: 15-12-2005 AN-Number: AN-2006-01 Driving IGBTs with unipolar gate voltage Introduction Infineon recommends the use of negative gate voltage to safely turn-off and block IGBT modules. In areas with nominal currents less than
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AN-2006-01
100tA
D-59581
Chip Resistors Parasitic capacitance
Infineon IGBT
Rogowski
AN-2006
AN-2006-01
Rogowski Coil application
series connection of igbt
transistor AE
IGBT DRIVER application note
AN2006-01
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AN-2006-01
Abstract: igbt infineon transistor AE Rs Chip Resistors Parasitic capacitance Rogowski rogowski coil applications Infineon IGBT AN-2006 transistor AE
Text: Application Note Page 1 Department: AIM PMD ID AE Date: 15-12-2005 AN-Number: AN-2006-01 Driving IGBTs with unipolar gate voltage Introduction Infineon recommends the use of negative gate voltage to safely turn-off and block IGBT modules. In areas with nominal currents less than
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AN-2006-01
100tA
D-59581
AN-2006-01
igbt infineon
transistor AE Rs
Chip Resistors Parasitic capacitance
Rogowski
rogowski coil applications
Infineon IGBT
AN-2006
transistor AE
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Untitled
Abstract: No abstract text available
Text: 19-3250; Rev 1; 10/08 ±15kV ESD-Protected +2.5V to +5.5V RS-232 Transceivers in UCSP and WLP The MAX3230E/AE and MAX3231E/AE are +2.5V to +5.5V powered EIA/TIA-232 and V.28/V.24 communications interfaces with low power requirements, high datarate capabilities, and enhanced electrostatic discharge
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RS-232
MAX3230E/AE
MAX3231E/AE
EIA/TIA-232
ent3231AE
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MAX3231AEEWV
Abstract: MAX3231E/AE MAX3230AEEWV MAX3230EEBV-T MAX3231EEBV-T MAX3231
Text: 19-3250; Rev 1; 10/08 ±15kV ESD-Protected +2.5V to +5.5V RS-232 Transceivers in UCSP and WLP The MAX3230E/AE and MAX3231E/AE are +2.5V to +5.5V powered EIA/TIA-232 and V.28/V.24 communications interfaces with low power requirements, high datarate capabilities, and enhanced electrostatic discharge
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RS-232
MAX3230E/AE
MAX3231E/AE
EIA/TIA-232
lowAX3231AE
MAX3231AEEWV
MAX3230AEEWV
MAX3230EEBV-T
MAX3231EEBV-T
MAX3231
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antenna 434MHz
Abstract: design oscillator pierce Application Notes transistor AE RF application of LC oscillator 868MHz antenna 868MHZ PCB 868-MHz transistor use in oscillator 915MHz pierce oscillator
Text: Application Note SAW-Components Comparison between negative impedance oscillator Colpitz oscillator and feedback oscillator (Pierce structure) App.: Note #13 Author: Updated: Version: Department: Alexander Glas June 19, 2001 1.1 SAW CE AE PD EPCOS AG SAW Components
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D-81617
antenna 434MHz
design oscillator pierce Application Notes
transistor AE RF
application of LC oscillator
868MHz
antenna 868MHZ PCB
868-MHz
transistor use in oscillator
915MHz
pierce oscillator
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Circuit diagram of Regulated Power supply 6V 5A
Abstract: W302A3-2
Text: 19-3250; Rev 1; 10/08 ±15kV ESD-Protected +2.5V to +5.5V RS-232 Transceivers in UCSP and WLP The MAX3230E/AE and MAX3231E/AE are +2.5V to +5.5V powered EIA/TIA-232 and V.28/V.24 communications interfaces with low power requirements, high datarate capabilities, and enhanced electrostatic discharge
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RS-232
MAX3230E/AE
MAX3231E/AE
EIA/TIA-232
MAX3230E/MAX3230AE/MAX3231E/MAX3231AE
Circuit diagram of Regulated Power supply 6V 5A
W302A3-2
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28AE
Abstract: 28-AE MAX3228EEBV-T MAX3229EEBV-T
Text: 19-2139; Rev 2; 10/08 ±15kV ESD-Protected +2.5V to +5.5V RS-232 Transceivers in UCSP and WLP The MAX3228E/AE and MAX3229E/AE are +2.5V to +5.5V powered EIA/TIA-232 and V.28/V.24 communications interfaces with low power requirements, high datarate capabilities, and enhanced electrostatic discharge
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RS-232
MAX3228E/AE
MAX3229E/AE
EIA/TIA-232
low-p32
28AE
28-AE
MAX3228EEBV-T
MAX3229EEBV-T
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Untitled
Abstract: No abstract text available
Text: 19-2139; Rev 2; 10/08 ±15kV ESD-Protected +2.5V to +5.5V RS-232 Transceivers in UCSP and WLP The MAX3228E/AE and MAX3229E/AE are +2.5V to +5.5V powered EIA/TIA-232 and V.28/V.24 communications interfaces with low power requirements, high datarate capabilities, and enhanced electrostatic discharge
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RS-232
MAX3228E/AE
MAX3229E/AE
EIA/TIA-232
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Untitled
Abstract: No abstract text available
Text: 19-0165; Rev 2; 1/96 5 V, St e p-Dow n, Curre nt -M ode PWM DC-DC Conve rt e rs _Fe a t ure s The MAX730A/MAX738A/MAX744A are 5V-outp ut CMOS, step-down switching regulators. The MAX738A/ MAX744A accept inputs from 6V to 16V and deliver
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MAX730A/MAX738A/MAX744A
MAX738A/
MAX744A
750mA.
500mA
MAX730A
450mA
21-589B
127mm
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Untitled
Abstract: No abstract text available
Text: Application Note 1074 Application Notes for AP3771 System Solution Prepared by Zhao Jing Jing System Engineering Dept. Regulation PSR . AP3771 has the special technique to suppress the audio noise, internal line compensation to reduce the number of system components, fixed cable
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AP3771
AP3771,
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schematic diagram 180v dc motor speed controller
Abstract: C4106 transistor C4106 t5001 ic tl8850ap c4060 transistor tl8850 C6113 EM-553-F9T C4054 transistor
Text: A B C D E F G H AIWA VX-G142 OPERATION 1 SCHEMATIC DIARGAM 8 8 OPERATION 1 PCB 7 7 OS753 GP1U281R 3 GND FROM OPERATION 2 B+ 1 Vout 6 ATR LED 7 T-REC LED 8 REC LED PLAY BACK LED SW Q758 DTC114TS C751 100P B W804 1 PLAY BACK D795 270 R754 270 R793 W801 POWER LED SW
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VX-G142
OS753
GP1U281R
EM-553-F9T
DTC114TS
CY759
EQ-552F9T
schematic diagram 180v dc motor speed controller
C4106 transistor
C4106
t5001 ic
tl8850ap
c4060 transistor
tl8850
C6113
EM-553-F9T
C4054 transistor
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AP3765
Abstract: k385
Text: Application Note 1064 Design and Application Notes for AP3765 System Solution Prepared by Sun Jun Jie System Engineering Dept. charger criteria with AP3765 system solution. 1. Introduction The AP3765 uses Pulse Frequency Modulation PFM method to realize Discontinuous Conduction Mode
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AP3765
k385
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BB 505 Varicap Diode
Abstract: varactor diode bb 205 DUAL CONVERSION NARROWBAND FM RECEIVERS cf 455 MC145166 RMC-2A6597HM colpitts oscillator vhf mc13135
Text: MC13135 MC13136 FM Communications Receivers The MC13135/MC13136 are the second generation of single chip, dual conversion FM communications receivers developed by Motorola. Major improvements in signal handling, RSSI and first oscillator operation have been made. In addition, recovered audio distortion and audio drive have
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MC13135/MC13136
MC13135
MC13136
BB 505 Varicap Diode
varactor diode bb 205
DUAL CONVERSION NARROWBAND FM RECEIVERS
cf 455
MC145166
RMC-2A6597HM
colpitts oscillator vhf
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IVN5000
Abstract: IVN5001
Text: IVN5000,1 AN Series FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes aE’s advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. .7 AMPERES 40-100 VOLTS
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IVN5000
IVN5000
IVN5001
IVN5001
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Untitled
Abstract: No abstract text available
Text: b3E • b2M^ae? MITSUBISHI 0015105 DGTL 527 ■ H IT 3 M ITSU B ISH I BIPOLAR DIGITAL ICs M 54574P L06IC 4 -U N IT 700m A TR A N S IS T O R ARRAY W IT H C L A M P DIODE DESCRIPTION The M 54574P is a semiconductor integrated circuit, con sisting of four transistor
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54574P
L06IC)
54574P
700mA)
-75TC
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T7K40
Abstract: No abstract text available
Text: IH NPNff—U > h>h~7> y .X £ / ' NPN Darlington Transistor Outline Dim ensions 4.6* ~*ï i?fiBiI§]S& Eq u ivalen t C ircu it 2 . 4 ± 0 .3 ?c nQ.6-0.1 =+0-3 Bo- Unit ! mm Case : TO-220 • — vw— * — vw— ■ ~22on -oi2on Ae A b so lu te Max. R a tin g s
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O-220
2SD1349
T7K40)
T7K40
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HHB8
Abstract: No abstract text available
Text: 7— / v fc S * S ' — h* m Com pound Transistor i? T / \ f 7 4# BAI F4N ! mm ★ » o s<4 r x t s t / t £ i*ui l x ^ £ i"c Ri = 22 kfì, R2= 47 k£2) o BN1F4N t ^ > "7° ij / > 9 'J T'féffl T"^ £ i " t Ì 6 Ì Ì * * S # ( T a = 25 °C) il -?- aE #
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PWiS10
HHB8
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471 kck
Abstract: transistor ajw UV 471 2SD1697
Text: 7 s— S • 2/ — h Silicon Transistor r 2SD1697 N P N ib 7 + ‘> 7 ; H - > lJ 3 i& m fo m tiw ffim n iW i t 800 a ^ m 'C ’To O ffi;V c E (sa t 'f"i~ « * » * :£ » 'i > ? h K 7 >f 7 " -¥ • a . • - t - x F l lE ,y p . SO aE # r V CBO 100 V V CEO
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2SD1697
PWS10
11fe1
471 kck
transistor ajw
UV 471
2SD1697
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i0485
Abstract: F506 pw510 m86s TS33 X108 TC-6058 transistor 3E l 0534 tc6058
Text: Compound Transistor Î&î/LF*9M N P N X ti ìs7 \,Wi > lJ □ V n m HMm ¥ f i o;< j 7 x m n .£ f à M lX ^ È - f : m m ) 2 .8 ± 0 .2 ( R i = 22 k Q ) 0 .65 1.5 o F N 1 F 4 Z t 3 > 7°!) 9 > 9 IJ T i È f f l 'C è È t D (T a = 25 °C ) il a «s aE -?-
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PW510
CycleS50
i0485
F506
m86s
TS33
X108
TC-6058
transistor 3E
l 0534
tc6058
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UF460
Abstract: 8 pin ic 3773 PA33 T108 X108 Tc-6173 s11s
Text: Compound Transistor A if# N 1 A 3 Q St o '< 4 T X Ì È Ì Ì £ 1*1/1 L T ^ R i = 1 .0 kQ , R 2= 10 i - t o kQ o — w v Ri — o A A 1A 3 Q £ n > 7 ° ij y > ? 'J X " itm T è £ w 1 \ v — R2 <» O e (Ta = 25 °C) Tl a& g aE # {ÌL fé n u ? ? •^ - X P I fE
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CycleS50
SC-43B
UF460
8 pin ic 3773
PA33
T108
X108
Tc-6173
s11s
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Untitled
Abstract: No abstract text available
Text: GEC PLES S EY PRELIMINARY INFORMATION S E M I C O N D U C T O R S 3095-1 0 ZN1040E/AE UNIVERSAL COUNT/DISPLAY CIRCUIT Th e Z N 1 0 4 0 is designed to satisfy the need for a universal count/display circuit suitable for the widest possible range of applications. This bipolar device allows fast count rates and
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ZN1040E/AE
ZN1040
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Untitled
Abstract: No abstract text available
Text: For Immediate Assistance, Contact Your Local Salesperson Precision, Low Drift 4-20mA TWO-WIRE TRANSMITTER FEATURES APPLICATIONS • INSTRUMENTATION AMPLIFIER INPUT Low Offset Voltage, 30|iV max Low Voltage Drift, 0.75 xV/°C max Low Nonlinearity, 0.01% max
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4-20mA
14-PIN
17313b5
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ZN1040E
Abstract: bcd to seven segment circuit diagram decade counter display multiplex 7 segment common anode mpx blanking bcd to seven segment circuit diagram 7 segment common anode counter decoder COUNTER LED bcd bcd to seven segment circuit diagram using ic 744 4 digit COUNTER LED bcd rs flip-flop IC 7400
Text: GEC PLESSEY PRELIMINARY INFORMATION S E M I C O N D U C T O R S 3095-1.0 Z N 1 0 4 0 E /A E UNIVERSAL COUNT/DISPLAY CIRCUIT The ZN1040 is designed to satisfy the need for a universal count/display circuit suitable for the widest possible range of applications. This bipolar device allows fast count rates and
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ZN1040E/AE
ZN1040
ZN1040E
bcd to seven segment circuit diagram
decade counter display multiplex
7 segment common anode mpx
blanking bcd to seven segment circuit diagram
7 segment common anode counter decoder
COUNTER LED bcd
bcd to seven segment circuit diagram using ic 744
4 digit COUNTER LED bcd
rs flip-flop IC 7400
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rs flip-flop IC 7400
Abstract: bcd to seven segment circuit diagram using ic 744 anti-bounce circuit ZN1040E bcd to 7 segment display using common cathode ztx550 equivalent 4 digit 7 segment display pin configuration 12 pi 4 digit multiplexed display system with leading z ZN1040AE zn1040
Text: GEC PLESSEY S E M I C O N D U C T O R S PRELIMINARY INFORMATION 3095-1.0 Z N 1 0 4 0 E /A E UNIVERSAL COUNT/DISPLAY CIRCUIT The ZN1040 is designed to satisfy the need for a universal count/display circuit suitable for the widest possible range of applications. This bipolar device allows fast count rates and
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ZN1040E/AE
ZN1040
rs flip-flop IC 7400
bcd to seven segment circuit diagram using ic 744
anti-bounce circuit
ZN1040E
bcd to 7 segment display using common cathode
ztx550 equivalent
4 digit 7 segment display pin configuration 12 pi
4 digit multiplexed display system with leading z
ZN1040AE
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