Untitled
Abstract: No abstract text available
Text: TLP292 TOSHIBA Photocoupler InGaAs Infrared LED & Photo-Transistor TLP292 Programmable Controllers AC/DC-Input Module Hybrid ICs Unit: mm TLP292 consist of photo transistor, optically coupled to two InGaAs infrared emitting diode connected inverse parallel, and can operate directly by AC
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TLP292
TLP292
3750Vrms)
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NJ15 U4 W
Abstract: nj15 transistor w4
Text: Inductive Proximity Sensors 15mm Sensing Range 2-Wire AC 4-Wire AC 15mm 15mm Yes Yes MODEL NUMBER S NJ15+U4+W NJ15+U4+W4 OUTPUT: Suffix W AC – Thyristor AC/DC – Transistor N.O. or N.C. — Suffix W4 Specifications SENSING RANGE SHIELDED — N.O. and N.C.
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8-500mA
500mA
A/20ms
20-250VAC/45-65Hz
20-130VAC/45-65Hz
NJ15 U4 W
nj15
transistor w4
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transistor t114
Abstract: transistor 13002 to-92
Text: LESHAN RADIO COMPANY, LTD. LR257 AC/DC Current Mode PWM power management controller The LR257 AC—DC is a high efficiency current-mode PWM power supply controller。 It drives an external NPN transistor for high voltage switching. Apply with BiCMOS technology, the
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LR257
LR257
EN55022A
150KHz
10MHz
30MHz
transistor t114
transistor 13002 to-92
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pc817a
Abstract: D2257 transistor t114 330UF 400V LR2257 maxim 1909 ac PWM 220v 1N4148 1N5817 EN55022A
Text: LESHAN RADIO COMPANY, LTD. LR2257 AC/DC Current Mode PWM power management controller The LR2257 AC—DC is a high efficiency current-mode PWM power supply controller that drives an internal NPN transistor for high voltage switching. Apply with BiCMOS technology, the
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LR2257
D2257
pc817a
D2257
transistor t114
330UF 400V
maxim 1909
ac PWM 220v
1N4148
1N5817
EN55022A
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igbt 800A
Abstract: BUK856-800A transistor parameters igbt philips
Text: Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION QUICK REFERENCE DATA Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC
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O220AB
igbt 800A
BUK856-800A
transistor parameters
igbt philips
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BUK452-100
Abstract: BUK452-100A PHP10N10E
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding, DC/DC and AC/DC
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O220AB
PHP10N10E
BUK452-100
BUK452-100A
PHP10N10E
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BUX348
Abstract: transistor BB 112 BUX348 applications
Text: BUX348 FAST-SWITCHING POWER TRANSISTOR • ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE FAST SWITCHING OFF-LINE APPLICATIONS TO 380V APPLICATIONS SWITCH MODE POWER SUPPLIES ■ UNINTERRUPTABLE POWER SUPPLY ■ DC AND AC MOTOR CONTROL
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BUX348
BUX348
transistor BB 112
BUX348 applications
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BUK854-800 applications
Abstract: BUK854-800 datasheet BUK854-800 BUK854-800A transistor igbt
Text: Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION QUICK REFERENCE DATA Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC
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O220AB
BUK854-800 applications
BUK854-800 datasheet
BUK854-800
BUK854-800A
transistor igbt
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bux348
Abstract: BUX348 applications
Text: BUX348 FAST-SWITCHING POWER TRANSISTOR • ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE FAST SWITCHING OFF-LINE APPLICATIONS TO 380V APPLICATIONS SWITCH MODE POWER SUPPLIES ■ UNINTERRUPTABLE POWER SUPPLY ■ DC AND AC MOTOR CONTROL
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BUX348
bux348
BUX348 applications
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BUX348
Abstract: No abstract text available
Text: BUX348 FAST-SWITCHING POWER TRANSISTOR • ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE FAST SWITCHING OFF-LINE APPLICATIONS TO 380V APPLICATIONS SWITCH MODE POWER SUPPLIES ■ UNINTERRUPTABLE POWER SUPPLY ■ DC AND AC MOTOR CONTROL
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BUX348
BUX348
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igbt 800A
Abstract: igbt philips BUK856-800A transistor igbt
Text: Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION QUICK REFERENCE DATA Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC
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O220AB
igbt 800A
igbt philips
BUK856-800A
transistor igbt
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PHP12N10E
Abstract: BUK453-100 BUK453-100A
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding, DC/DC and AC/DC
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O220AB
PHP12N10E
PHP12N10E
BUK453-100
BUK453-100A
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BUX348
Abstract: No abstract text available
Text: BUX348 FAST-SWITCHING POWER TRANSISTOR . . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE FAST SWITCHING OFF-LINE APPLICATIONS TO 380V APPLICATIONS . SWITCH MODE POWER SUPPLIES . UNINTERRUPTABLE POWER SUPPLY . DC AND AC MOTOR CONTROL INTERNAL SCHEMATIC DIAGRAM
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BUX348
P0030
BUX348
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BUK854800A
Abstract: Bipolar Transistor IGBT buk854-800a BUK854
Text: Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC
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BUK854-800A
T0220AB
accor00
BUK854800A
Bipolar Transistor IGBT
buk854-800a
BUK854
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Bipolar Transistor IGBT
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC
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BUK854-800A
T0220AB
Bipolar Transistor IGBT
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Untitled
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC
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BUK856-800A
T0220AB
56-800A
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lc 945 p transistor
Abstract: lc 945 transistor
Text: Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC
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BUK856-800A
T0220AB
lc 945 p transistor
lc 945 transistor
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor tGBT GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC
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BUK854-800A
T0220AB
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC
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OCR Scan
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BUK856-800A
T0220AB
125JC
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Untitled
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC
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BUK854-800A
T0220AB
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Mitsubishi transistor
Abstract: transistor 1015 K 192 A transistor diode 210q k 1 transistor mitsubishi power Modules
Text: MITSUBISHI TRANSISTOR MODULES ! QM1000HA-24B j HIGH POWER SWITCHING USE j INSULATED TYPE { APPLICATION AC m otor controllers, UPS, CVCF, DC m otor controllers, NC equipm ent, W elders 2 - 1 90 MITSUBISHI ELECTRIC MITSUBISHI TRANSISTOR MODULES QM1000HA-24B
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QM1000HA-24B
1000H
Mitsubishi transistor
transistor 1015
K 192 A transistor
diode 210q
k 1 transistor
mitsubishi power Modules
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2SK1198
Abstract: ss1212 ScansUX881 nec 2501 LD
Text: NEC IM-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK1198 DESCRIPTION The 2SK1198 Transistor is N-channel designed for MOS switching Field Effect Power power supplies, PACKAGE DIM EN SIO N S AC in millimeters inches Adapters. FEATURES •
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2SK1198
1988M
ss1212
ScansUX881
nec 2501 LD
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diode d2s
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding, DC/DC and AC/DC
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PHP10N10E
T0220AB
diode d2s
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transistor D 1557
Abstract: d 1556 transistor transistor d 1556 1557 b transistor transistor 1555
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding, DC/DC and AC/DC
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PHP12N10E
T0220AB
transistor D 1557
d 1556 transistor
transistor d 1556
1557 b transistor
transistor 1555
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