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    TRANSISTOR AC 187 K Search Results

    TRANSISTOR AC 187 K Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR AC 187 K Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HA17358 equivalent

    Abstract: M51977 IC ha17555 SG3524 application notes speed control Automatic Voltage Regulator Circuit transistor audio fp 1016 ha17555 ic SG3524 application notes in push pull HA17555FP MB3769
    Text: Hitachi Standard Linear ICs DATA BOOK ADE-404-002A 2nd Edition 09/98 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of


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    ADE-404-002A HA17901FP-EL HA17358 equivalent M51977 IC ha17555 SG3524 application notes speed control Automatic Voltage Regulator Circuit transistor audio fp 1016 ha17555 ic SG3524 application notes in push pull HA17555FP MB3769 PDF

    5660-6R

    Abstract: No abstract text available
    Text: Cassette Style AC-DC Converters 250 Watt AC-DC Converters with PFC KP Series KP Series Input voltage from 187.255 V AC 1 or 2 isolated outputs up to 56.5 V DC 4 kV AC I/O electric strength test voltage • Power factor >0.95, harmonics <IEC/EN61000-3-2 • Output power up to 280 Watt


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    IEC/EN61000-3-2 5660-6R PDF

    Melcher KP 5000

    Abstract: melcher kp 5000 converter 5660-6R schroff power supply 11006 KP Series
    Text: Rugged Environment AC-DC Converters >100 Watt 250 Watt AC-DC Converters with PFC KP Series KP Series Input to output isolation Double output • Power factor >0.95, harmonics <IEC/EN61000-3-2 • Output power up to 280 Watt • Input over- and undervoltage lock-out


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    IEC/EN61000-3-2 Melcher KP 5000 melcher kp 5000 converter 5660-6R schroff power supply 11006 KP Series PDF

    Untitled

    Abstract: No abstract text available
    Text: Data sheet. CP T SNT 360W 48V 7,5A Weidmüller Interface GmbH & Co. KG Klingenbergstraße 16 D-32758 Detmold Germany Fon: +49 5231 14-0 Fax: +49 5231 14-292083 www.weidmueller.com The powerful new line of PRO-H power supplies – with ATEX and Class I Div. 2 approvals – is designed


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    D-32758 E236157CON E258476CON E255651CONV PDF

    LK5660-7R

    Abstract: L3032 LK2000
    Text: K Series with PFC Data Sheet 150 – 280 Watt AC-DC Converters Features • RoHS lead-free-solder and lead-solder-exempted products are available. • Class I equipment • • • • Power factor >0.93, harmonics IEC/EN 61000-3-2 Immunity according to IEC/EN 61000-4-2, -3, -4, -5, -6


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    BCD20001-G 16-Dec-2010 LK5660-7R L3032 LK2000 PDF

    MICROPROCESSOR Z80

    Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro
    Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call


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    Z80TM V20TM, V20HLTM, V25TM, V25HSTM, V30TM, V30HLTM, V33TM, V33ATM, V35TM, MICROPROCESSOR Z80 uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro PDF

    p-channel jfet rf

    Abstract: No abstract text available
    Text: Preliminary Data Sheet BIPOLAR ANALOG INTEGRATED CIRCUIT PC835MN-KAA J-FET INPUT LOW-POWER DUAL OPERATIONAL AMPLIFIER The μPC835 is a J-FET input low-power operational amplifier featuring low offset voltage and stable AC operating characteristics . NEC's unique high-speed PNP transistor fT = 300 MHz in the output stage solves the oscillation


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    PC835MN-KAA PC835 Rs100, p-channel jfet rf PDF

    varistor C22

    Abstract: Varistor LED BL 05A BL 176A VARISTOR
    Text: Datasheet TERMOPTO Solid-State Relays The TERMOPTO compact terminal requires almost no maintenance. They feature integrated isolation of potential voltages, save space in the enclosure, reduce maintenance and optimize machine up time. Pluggable cross connections, available for terminals or Push In


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    2/11-LIT1103 varistor C22 Varistor LED BL 05A BL 176A VARISTOR PDF

    CM50DU-24H

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM50DU-24H MEDIUM POWER SWITCHING USE INSULATED TYPE TC Measured Point A B E F G U H J C2E1 E2 C1 G2 G2 CM D C 2 - Mounting Holes 6.5 Dia. V G1 E1 K L M 3-M5 Nuts O P O Q Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two


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    CM50DU-24H CM50DU-24H PDF

    CM50TU-24H

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM50TU-24H MEDIUM POWER SWITCHING USE INSULATED TYPE A B F G E S 4 - Mounting Holes G H E H E R K L GuP EuP C D TC Measured Point GuN EuN GvP EvP GwP EwP TC Measured Point M GwN EwN GvN EvN u v w K J E H N J E H E 5 - M4 NUTS TAB#110 t=0.5


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    CM50TU-24H CM50TU-24H PDF

    CM50BU-24H

    Abstract: SM4G 74002
    Text: CM50BU-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Four IGBTMOD U-Series Module 50 Amperes/1200 Volts TYP K S - NUTS (4 TYP) K N P GUP EUP L T - (4 TYP.) R M G VP E VP N L P B E Q P L N GUN EUN L G VN E VN U V


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    CM50BU-24H Amperes/1200 manageme72 CM50BU-24H SM4G 74002 PDF

    M/CM50BU-24H

    Abstract: No abstract text available
    Text: CM50BU-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Four IGBTMOD U-Series Module 50 Amperes/1200 Volts TYP K S - NUTS (4 TYP) K N P GUP EUP L T - (4 TYP.) R M GVP EVP N L P B E Q P L N GUN EUN L G V N E VN U V


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    CM50BU-24H Amperes/1200 M/CM50BU-24H PDF

    Untitled

    Abstract: No abstract text available
    Text: CM50BU-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Four IGBTMOD U-Series Module 50 Amperes/1200 Volts TYP K S - NUTS (4 TYP) K N P GUP EUP L T - (4 TYP.) R M G VP E VP N L P B E Q P L N GUN EUN L G VN E VN U V


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    CM50BU-24H Amperes/1200 assemb7-1800 CM50BU-24H PDF

    current fed push pull topology

    Abstract: "CHAPTER 1 Introduction to Power Semiconductors" Power Semiconductor Applications Philips Semiconductors transistor Electronic ballast "INDUCTION LAMP" "Power Semiconductor Applications" Philips 40w ELECTRONIC choke BALLAST DIAGRAM 230v 40w fluorescent lamp inverter circuit circuit diagram electronic ballast for 40W tube l circuit diagram electronic choke for tube light CHAPTER 1 Introduction to Power Semiconductors
    Text: Lighting Power Semiconductor Applications Philips Semiconductors CHAPTER 8 Lighting 8.1 Fluorescent Lamp Control 575 Lighting Power Semiconductor Applications Philips Semiconductors Fluorescent Lamp Control 577 Lighting Power Semiconductor Applications Philips Semiconductors


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    50/60Hz current fed push pull topology "CHAPTER 1 Introduction to Power Semiconductors" Power Semiconductor Applications Philips Semiconductors transistor Electronic ballast "INDUCTION LAMP" "Power Semiconductor Applications" Philips 40w ELECTRONIC choke BALLAST DIAGRAM 230v 40w fluorescent lamp inverter circuit circuit diagram electronic ballast for 40W tube l circuit diagram electronic choke for tube light CHAPTER 1 Introduction to Power Semiconductors PDF

    Power Semiconductor Applications Philips Semiconductors

    Abstract: "Power Semiconductor Applications" Philips "CHAPTER 1 Introduction to Power Semiconductors" CHAPTER 1 Introduction to Power Semiconductors "static induction thyristor" varistor 503 static induction Thyristor TELEVISION EHT TRANSFORMERS 201 Static Induction Thyristor varistor 10c 471
    Text: Thermal Management Power Semiconductor Applications Philips Semiconductors CHAPTER 7 Thermal Management 7.1 Thermal Considerations 553 Thermal Management Power Semiconductor Applications Philips Semiconductors Thermal Considerations 555 Thermal Management


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    PDF

    Transistor smd 338

    Abstract: transistor smd 723 LR26550 TQ2-12 TQ2-12V-3 TQ2-24 DIODE SMD m14 TQ2-12V
    Text: TQ MOST ADVANCED POLARIZED RELAY UL File No.: E43149; CSA File No.: LR26550 9 .354 26.7 1.051 TQ-RELAYS • Ultra-small size • High sensitivity: 2 Form C: 140 mW power consumption single side stable type 4 Form C: 280 mW power consumption (single side stable type)


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    E43149; LR26550 Transistor smd 338 transistor smd 723 LR26550 TQ2-12 TQ2-12V-3 TQ2-24 DIODE SMD m14 TQ2-12V PDF

    2sd1187

    Abstract: 2SD118
    Text: TOSHIBA 2SD1187 2 S D 1 187 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SW ITCHING APPLICATIONS DC-DC CONVERTER A N D DC-AC INVERTER APPLICATIONS • INDUSTRIAL APPLICATIONS Unit in mm 15.9MAX. . ^3.2 ±0.2 Low Collector-Emitter Saturation Voltage : V qe sat = 0-5V


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    2SD1187 2sd1187 2SD118 PDF

    2SD118

    Abstract: 2SD1187
    Text: 2SD1187 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 1 187 Unit in mm HIGH POWER SWITCHING APPLICATIONS DC-DC CONVERTER AND DC-AC INVERTER APPLICATIONS • SYMBOL VCBO v CEO v EBO ic Ib Pc Tj Tstg RATING 100 80 5 10 2 80 150 -5 5 -1 5 0


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    2SD1187 2SD118 2SD1187 PDF

    MAX4180ESA

    Abstract: No abstract text available
    Text: 19-1221; Rev2; 8/98 >kiyixi>ki Single/Dual/Quad, 2 7 0 M H z , 1mA, SOT23, C u rre n t-F e e d b a c k Amplifiers with S h u td o w n Description The M AX4180 fa m ily of c u rre n t-fe e d b a c k a m p lifie rs c o m b in e s h ig h -sp e e d p e rfo rm a n c e , low d is to rtio n ,


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    AX4180 MAX4180ESA PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN2322B Thick Film Hybrid 1C S T K 4 1 12 II S A 0O I AF Power Amplifier Split Power Supply (10W + 10W min, THD = 0.4%) Features Package Dimensions • The STK4102II series (STK4112II) and STK4101V series (high-grade type) are pin-compatible in the out­


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    EN2322B STK4102II STK4112II) STK4101V STK4101II STK4112II] t17D7ti STK411211 PDF

    PT2000 temperature sensor

    Abstract: PT2000 rtd pt2000 pt100 4 wire pt100 burr brown
    Text: BURR - BROWN XTR112 XTR114 4-20mA CURRENT TRANSMITTERS with Sensor Excitation and Linearization FEATURES APPLICATIONS LOW UNADJUSTED ERROR INDUSTRIAL PROCESS CONTROL PRECISION CURRENT SOURCES XTR112: Two 250|iA XTR114: Two 100|iA FACTORY AUTOMATION SCADA REMOTE DATA ACQUISITION


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    XTR112 XTR114 4-20mA XTR112: XTR114: 30nAp-p 110dB SO-14 XTR114 PT2000 temperature sensor PT2000 rtd pt2000 pt100 4 wire pt100 burr brown PDF

    a2hb transistor

    Abstract: 1000A diode Transistor AC 188 A2HB 20/a2hb transistor
    Text: MITSUBISHI TRANSISTOR MODULES QM 1000H A-2HB HIGH POWER SWITCHING USE INSULATED TYPE | QM1000HA-2HB • Ic Collector current. • V C EX Collector-emitter voltage. • hFE DC current gain. 10 00A 1000V


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    1000H QM1000HA-2HB E8Q276 E80271 a2hb transistor 1000A diode Transistor AC 188 A2HB 20/a2hb transistor PDF

    MAX4180ESA

    Abstract: No abstract text available
    Text: , 19-1221; Rev 1; 8/97 Single/Dual/Quad 270M H z, 1mA, SOT23, C urrent-Feedback Am plifiers w ith Shutdown The M A X 4 1 8 0 -M A X 4 1 87 fe a tu re 0 .0 8 % /0 .03 ° d iffe re n ­ tial gain and phase errors, a 20ns settling tim e to 0.1% , and a 45 0 V/|js slew rate, m aking th e m ideal fo r highp e r f o r m a n c e v id e o a p p lic a t io n s . T h e M A X 4 1 8 0 /


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    4181/M 4183/M SDT23, MAX4180ESA PDF

    philips ET-E 60

    Abstract: No abstract text available
    Text: N AMER P H I L I P S / D I S C R E T E bTE D • bb 53 T 3 1 □D3D4TD bSS H A P X Philips Semiconductors Product Specification Pow erM OS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in


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    BUK437-600B philips ET-E 60 PDF