MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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Abstract: No abstract text available
Text: DATA SHEET COMPOUND TRANSISTOR CE2F3P on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE2F3P is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter as protect elements. This transistor is ideal for actuator drives of OA
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2SC4815
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4815 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4815 is a power transistor developed for high-speed switching and features low VCE sat and high hFE. This transistor is ideal for use as a driver in DC/DC converters and actuators.
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2SC4815
2SC4815
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2SC4813
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4813 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4813 is a power transistor developed for high-speed switching and features high hFE and low VCE sat . This transistor is ideal for use as a driver in DC/DC converters and actuators.
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2SC4813
2SC4813
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2SA1845
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1845 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1845 is a power transistor developed for high-speed switching and features a high hFE at low VCE sat . This transistor is ideal for use as a driver in DC/DC converters and actuators.
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2SA1845
2SA1845
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2SA1847
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1847 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1847 is a power transistor developed for high-speed switching and features a high hFE at low VCE sat . This transistor is ideal for use as a driver in DC/DC converters and actuators.
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2SA1847
2SA1847
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tip122 tip127 audio board
Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920
Text: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents
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Power247TM,
tip122 tip127 audio board
BUK 450-1000
Transistor Selection Guide
tip122 tip127 audio amp
FJL6920 equivalent
car amp
TIP41/TIP42
kse13009
TRANSISTOR TIP31
FJL6920
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2SA1843
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1843 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1843 is a power transistor developed for high-speed switching and features a high hFE at low VCE sat . This transistor is ideal for use as a driver in DC/DC converters and actuators.
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2SA1843
2SA1843
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MMBT2907A
Abstract: Application of MMBT2907A MMBT2907 MMBT2907 ON MMBT2222 MMBT2222A
Text: MMBT2907 / MMBT2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor MMBT2222 and MMBT2222A are recommended.
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MMBT2907
MMBT2907A
MMBT2222
MMBT2222A
OT-23
MMBT2907A
Application of MMBT2907A
MMBT2907 ON
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MMBT2907
Abstract: MMBT2222 MMBT2222A MMBT2907A
Text: MMBT2907 / MMBT2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor MMBT2222 and MMBT2222A are recommended.
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MMBT2907
MMBT2907A
MMBT2222
MMBT2222A
OT-23
MMBT2907
MMBT2907A
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MMBT2907
Abstract: MMBT2907A MMBT2907 ON MMBT2222 MMBT2222A
Text: MMBT2907 / MMBT2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor MMBT2222 and MMBT2222A are recommended.
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MMBT2907
MMBT2907A
MMBT2222
MMBT2222A
OT-23
MMBT2907
150mA,
500mA,
100MHz
MMBT2907A
MMBT2907 ON
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MMBT2222ATL1
Abstract: MMBT2907ATL1 MMBT2907ALT1 MMBT2222LT1 MMBT2907LT1 hFE is transistor MMBT2907LT
Text: MMBT2907LT1 / MMBT2907ALT1 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor MMBT2222LT1 and MMBT2222ATL1 are recommended.
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MMBT2907LT1
MMBT2907ALT1
MMBT2222LT1
MMBT2222ATL1
OT-23
MMBT2907ATL1
150mA,
500mA,
100MHz
MMBT2907ATL1
MMBT2907ALT1
hFE is transistor
MMBT2907LT
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MMBT2222ATL1
Abstract: MMBT2907ALT1 MMBT2222LT1 MMBT2907ATL1 MMBT2907LT1
Text: MMBT2907LT1 / MMBT2907ALT1 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor MMBT2222LT1 and MMBT2222ATL1 are recommended.
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MMBT2907LT1
MMBT2907ALT1
MMBT2222LT1
MMBT2222ATL1
OT-23
MMBT2907ATL1
150mA,
500mA,
100MHz
MMBT2907ALT1
MMBT2907ATL1
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MMBTSA1015
Abstract: No abstract text available
Text: MMBTSA1015LT1 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC1815LT1 is recommended.
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MMBTSA1015LT1
MMBTSC1815LT1
OT-23
150mA
100mA,
100Hz,
MMBTSA1015
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MMBTSA1015
Abstract: No abstract text available
Text: MMBTSA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC1815 is recommended.
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MMBTSA1015
MMBTSC1815
OT-23
150mA
100mA,
100Hz,
MMBTSA1015
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hFE-200 transistor PNP
Abstract: No abstract text available
Text: MMBTSA1162 PNP Silicon Epitaxial Planar Transistor for AF general purpose amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC2712 is recommended.
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MMBTSA1162
MMBTSC2712
OT-23
100mA,
100Hz,
hFE-200 transistor PNP
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Untitled
Abstract: No abstract text available
Text: MMBTSA1162 PNP Silicon Epitaxial Planar Transistor for AF general purpose amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC2712 is recommended.
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MMBTSA1162
MMBTSC2712
OT-23
100mA,
100Hz,
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Untitled
Abstract: No abstract text available
Text: MMBTSA1015LT1 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC1815LT1 is recommended.
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MMBTSA1015LT1
MMBTSC1815LT1
OT-23
150mA
100mA,
100Hz,
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Untitled
Abstract: No abstract text available
Text: MMBTSA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC1815 is recommended.
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MMBTSA1015
MMBTSC1815
OT-23
150mA
100mA,
100Hz,
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Untitled
Abstract: No abstract text available
Text: MMBTSC1815LT1 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA1015LT1 is recommended.
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MMBTSC1815LT1
MMBTSA1015LT1
OT-23
150mA
100mA,
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2sa1048 transistor
Abstract: transistor 2sa1048 hFE-200 transistor PNP 2sc2458 equivalent 2SA1048 2SC2458 2SA104
Text: ST 2SA1048 PNP Silicon Epitaxial Planar Transistor for audio frequency amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. As complementary type the NPN transistor ST 2SC2458 is recommended.
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2SA1048
2SC2458
100mA,
2sa1048 transistor
transistor 2sa1048
hFE-200 transistor PNP
2sc2458 equivalent
2SA1048
2SA104
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2sa1048 transistor
Abstract: 2SA1048 2sc2458 equivalent 2SC2458
Text: ST 2SA1048 PNP Silicon Epitaxial Planar Transistor for audio frequency amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. As complementary type the NPN transistor ST 2SC2458 is recommended.
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2SA1048
2SC2458
100mA,
2sa1048 transistor
2SA1048
2sc2458 equivalent
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2SC5170
Abstract: LE300 mitsubishi vcb transistor Common Base amplifier common base amplifier circuit DUAL TRANSISTOR
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5170 DUAL TRANSISTOR (BASE COMMON) FOR CONSTANT-CURRENT CIRCUIT, ACTIVE LOAD APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC5170 is a silicon NPN epitaxial type transistor. It is designed for
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2SC5170
2SC5170
100Hz)
110mVtyp
X10-3
LE300
mitsubishi vcb
transistor Common Base amplifier
common base amplifier circuit
DUAL TRANSISTOR
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2sa1929
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1929 DUAL TRANSISTOR (BASE COMMON) FOR CONSTANT-CURRENT CIRCUIT, ACTIVE LOAD APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Mitsubishi 2SA1929 is a silicon PNP epitaxial type transistor. It is designed for
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2SA1929
2SA1929
-100V
300mA,
100Hz)
110mV
270Hz
X10-3
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