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    TRANSISTOR AA A Search Results

    TRANSISTOR AA A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR AA A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    C67078-S3112-A2

    Abstract: J 326 t 326 Transistor
    Text: BUZ 326 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 326 400 V 10.5 A 0.5 Ω TO-218 AA C67078-S3112-A2 Maximum Ratings Parameter Symbol Continuous drain current


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    O-218 C67078-S3112-A2 C67078-S3112-A2 J 326 t 326 Transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: BUZ 357 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 2 Pin 1 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 357 1000 V 5.1 A 2Ω TO-218 AA C67078-S3110-A2 Maximum Ratings Parameter Symbol Continuous drain current


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    O-218 C67078-S3110-A2 PDF

    C67078-S3128-A2

    Abstract: buz341
    Text: BUZ 341 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 341 200 V 33 A 0.07 Ω TO-218 AA C67078-S3128-A2 Maximum Ratings Parameter Symbol Continuous drain current


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    O-218 C67078-S3128-A2 C67078-S3128-A2 buz341 PDF

    Untitled

    Abstract: No abstract text available
    Text: BUZ 358 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 2 Pin 1 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 358 1000 V 4.5 A 2.6 Ω TO-218 AA C67078-S3111-A2 Maximum Ratings Parameter Symbol Continuous drain current


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    O-218 C67078-S3111-A2 PDF

    DIODE BY 339

    Abstract: DIODE NF 339 70h10
    Text: BUZ 339 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 339 500 V 11.5 A 0.5 Ω TO-218 AA C67078-S3133-A2 Maximum Ratings Parameter Symbol Continuous drain current


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    O-218 C67078-S3133-A2 DIODE BY 339 DIODE NF 339 70h10 PDF

    C67078-A3209-A2

    Abstract: buz384
    Text: BUZ 384 SIPMOS Power Transistor • N channel • Enhancement mode • FREDFET Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 384 500 V 10.5 A 0.6 Ω TO-218 AA C67078-A3209-A2 Maximum Ratings Parameter Symbol Drain source voltage


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    O-218 C67078-A3209-A2 C67078-A3209-A2 buz384 PDF

    C67078-S3129-A2

    Abstract: tp 312 transistor
    Text: BUZ 312 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 312 1000 V 6A 1.5 Ω TO-218 AA C67078-S3129-A2 Maximum Ratings Parameter Symbol Continuous drain current


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    O-218 C67078-S3129-A2 C67078-S3129-A2 tp 312 transistor PDF

    DIODE 349

    Abstract: C67078-S3113-A2
    Text: BUZ 349 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 349 100 V 32 A 0.06 Ω TO-218 AA C67078-S3113-A2 Maximum Ratings Parameter Symbol Continuous drain current


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    O-218 C67078-S3113-A2 DIODE 349 C67078-S3113-A2 PDF

    C67078-S3130-A2

    Abstract: No abstract text available
    Text: BUZ 334 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 334 600 V 12 A 0.5 Ω TO-218 AA C67078-S3130-A2 Maximum Ratings Parameter Symbol Continuous drain current


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    O-218 C67078-S3130-A2 C67078-S3130-A2 PDF

    C67078-S3109-A2

    Abstract: 80J-10
    Text: BUZ 308 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 308 800 V 2.6 A 4Ω TO-218 AA C67078-S3109-A2 Maximum Ratings Parameter Symbol Continuous drain current


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    O-218 C67078-S3109-A2 Ope9/96 C67078-S3109-A2 80J-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TLP759 TOSHIBA PHOTOCOUPLER DIGITAL LOGIC GROUND ISOLATION G aA M s IRED + PHOTO-IC TLP759 LINE RECEIVER MICROPROCESSOR SYSTEM INTERFACES SWITCHING POWER SUPPLY FEEDBACK CONTROL TRANSISTOR INVERTOR The TOSHIBA TLP759 consists of a GaA€As high-output light


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    TLP759 TLP759 PDF

    2C3440

    Abstract: No abstract text available
    Text: NPN Power Transistor Chips 2C3440 r CHIP TYPE: AA FEATURES • Triple Diffused, Planar Design • Contact Metallization: Base, Emitter - Aluminum - 20,000 A Nominal Collector - Gold - 3,000 A Nominal • Die Thickness - 7 Mils Nominal E = Emitter Pad .007 x .0065


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    2C3440 35CVS, 2C3440 PDF

    Untitled

    Abstract: No abstract text available
    Text: Stanford Microdevices Product Description SNA-600 Stanford Microdevices' SNA-600 is a high-performance G aA s Heterojunction Bipolar Transistor MMIC in die form. A Darlington configuration is utilized for broadband perfor­ mance to 6.5 GHz. DC-6.5 GHz, Cascadable


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    SNA-600 18dBm 100mA. SNA-676, 84-1LMIT1 PDF

    la 7518

    Abstract: TFK 450 BCW60C BCW60D BCW60
    Text: G estem pelt m it: 'W BCW60A BCW 60B BCW60C BCW60D BCX70G BCX70H BC X70J BCX70K M a r k e d w ith : AA AB AC AD AG AH AJ AK BCW 60 * BCX 70 Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar A F Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen


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    BCW60C BCW60D 200Hz la 7518 TFK 450 BCW60 PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAÔAs IRED a PHOTO-IC TLP759 TLP7 59 DIGITAL LOGIC GROUND ISOLATION LINE RECEIVER. M ICROPROCESSOR SYSTEM INTERFACES. SWITCHING POW ER SUPPLY FEEDBACK CONTROL. TRANSISTOR INVERTOR. The TO SHIBA TLP759 consists of a G aA fA s high-output light em itting


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    TLP759 TLP759 PDF

    TLP620

    Abstract: No abstract text available
    Text: T O S H IB A PH O T O C O U PLER SEMICONDUCTOR TOSHIBA TEC H N IC A L TLP620, TLP620-2, TLP620-4 DATA G aA s IRED & PH OTO -TRANSISTOR TLP620 PROGRAM M ABLE CONTROLLERS A C / DC-INPUT MODULE TELECOMMUNICATION The T O S H IB A TLP620, -2 and -4 consists of a photo-transistor


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    TLP620, TLP620-2, TLP620-4 TLP620) TLP620-2 TLP620-4 TLP620 PDF

    YTFP453

    Abstract: Field Effect Transistor Silicon N Channel MOS vdss 600
    Text: FIELD EFFECT TRANSISTOR YTFP453 SILICON N CHANNEL MOS TYPE jr-M O S n HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR,DC-DC CONVERTER ANO HOTOR Unit in aa 1&9MAX. DRIVE APPLICATIONS. 0 3 .2 ± a s ¿ & Æ FEATURES:


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    YTFP453 10jus -100A/W YTFP453 Field Effect Transistor Silicon N Channel MOS vdss 600 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 64 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vos /D ^DS on Package 1) Ordering Code BUZ 64 400 V 11.5 A 0.4 £2 TO-204 AA C67078-S1017-A2 Maximum Ratings Symbol Parameter Continuous drain current, Tc = 31 °C


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    O-204 C67078-S1017-A2 23SbDS DDb7T15 fl23Sb05 PDF

    TLP582

    Abstract: No abstract text available
    Text: TO SHIBA PHOTOCOUPLER SEMICONDUCTOR TOSHIBA TECHNICAL TLP582 DATA G aA íA s IRED & PHOTO 1C TLP582 MOS FET GATE DRIVER TRANSISTOR INVERTER The T O S H IB A TLP582 consists of a GaA-fAs lig h t em itting diode and integrated high gain, high speed photodetector.


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    TLP582 TLP582) TLP582 400ns PDF

    IR receiver didoe

    Abstract: E67349 TLP114A 11-4C2
    Text: TLP114A TO SH IBA TOSHIBA PHOTOCOUPLER G aA M s IRED & PHOTO-IC T L P114A Unit in mm DIGITAL LOGIC ISOLATION. LINE RECEIVER. 6 POWER SUPPLY CONTROL FEEDBACK CONTROL. 5 4 i l i SWITCHING POWER SUPPLY. TRANSISTOR INVERTOR. o The TOSHIBA MINI FLAT COUPLER TLP114A is a small outline


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    TLP114A TLP114A UL1577, E67349 IR receiver didoe E67349 11-4C2 PDF

    A1019

    Abstract: A1019 TRANSISTOR DIODE BUZ 94 BUZ94 TC-130-W
    Text: SIEM ENS SIPMOS Power Transistor BUZ 94 • N channel • Enhancement mode Type v DS h BUZ 94 600 V 7.8 A ^DS on 0.9 Si Package 1> Ordering Code TO-204 AA C67078-A1019-A2 Maximum Ratings Parameter Continuous drain current, Pulsed drain current, Symbol Tc = 27 "C


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    O-204 C67078-A1019-A2 fl235b05 623StiOS 0235bG5 A1019 A1019 TRANSISTOR DIODE BUZ 94 BUZ94 TC-130-W PDF

    2C3439

    Abstract: No abstract text available
    Text: NPN Power Transistor Chips 2C3439 FEATURES CHIP TYPE: AA • Triple Diffused, Planar Design • C ontact M etallization: Base, E m itter - A lum inum - 20,000 A N om inal C ollector - Gold - 3,000 A Nom inal • Die Thickness - 7 M ils N om inal E = Emitter Pad .007 x .0065


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    2C3439 350fiS, 2C3439 PDF

    BUZ64

    Abstract: transistor buz 350 BUZ 336 siemens 350 98 transistor buz 10 C160
    Text: SIEM EN S SIPMOS Power Transistor BUZ 64 • N channel • Enhancement mode • Avalanche-rated Type Vos BUZ 64 400 V Ia 11.5 A ^DS on 0.4 Í2 Package 1) O rdering Code TO-204 AA C67078-S1017-A2 Maximum Ratings Parameter Symbol Continuous drain current, 7C = 31 “C


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    BUZ64 O-204 C67078-S1017-A2 023SbD5 10-2L a23SbDS transistor buz 350 BUZ 336 siemens 350 98 transistor buz 10 C160 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TLP559 TLP559 TOSHIBA PHOTOCOUPLER DIGITAL LOGIC GROUND ISOLATION G a A M s IRED & PHOTO IC LINE RECEIVER MICROPROCESSOR SYSTEM INTERFACES SWITCHING PO W ER SUPPLY FEEDBACK CONTROL TRANSISTOR INVERTOR The T O S H IB A TLP559 consists of a G aA€A s high-output lig h t


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    TLP559 TLP559 2500Vrms PDF