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    TRANSISTOR A75 Search Results

    TRANSISTOR A75 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A75 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321181, 44321361 32M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The µPD44321181 is a 2,097,152-word by 18-bit and the µPD44321361 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.


    Original     		PDF PD44321181, 32M-BIT PD44321181 152-word 18-bit PD44321361 576-word 36-bit

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321182, 44321362 32M-BIT ZEROSBTM SRAM PIPELINED OPERATION Description The µPD44321182 is a 2,097,152-word by 18-bit and the µPD44321362 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.


    Original     		PDF PD44321182, 32M-BIT PD44321182 152-word 18-bit PD44321362 576-word 36-bit

    M15958

    Abstract: MARKING C75
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321181, 44321361 32M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The µPD44321181 is a 2,097,152-word by 18-bit and the µPD44321361 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.


    Original     		PDF PD44321181, 32M-BIT PD44321181 152-word 18-bit PD44321361 576-word 36-bit M15958 MARKING C75

    transistor marking A19

    Abstract: A6 marking
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD44321181, 44321361 32M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The μPD44321181 is a 2,097,152-word by 18-bit and the μPD44321361 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.


    Original     		PDF PD44321181, 32M-BIT PD44321181 152-word 18-bit PD44321361 576-word 36-bit transistor marking A19 A6 marking

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321181, 44321361 32M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The µPD44321181 is a 2,097,152-word by 18-bit and the µPD44321361 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.


    Original     		PDF PD44321181, 32M-BIT PD44321181 152-word 18-bit PD44321361 576-word 36-bit

    free transistor equivalent book 2sc

    Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


    Original     		PDF X10679EJHV0SG00 free transistor equivalent book 2sc uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002

    A75-2

    Abstract: CA75-2 SMA75-2
    Text: Cascadable Amplifier 5 to 250 MHz A75-2/ SMA75-2 V2 Features Product Image • AVAILABLE IN SURFACE MOUNT • HIGH GAIN: 21.0 dB TYP. • MEDIUM OUTPUT LEVEL: +8.0 dBm (TYP.) Description The A75-2 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance


    Original     		PDF A75-2/ SMA75-2 A75-2 MIL-STD-883 A75-2 CA75-2 CA75-2 SMA75-2

    Untitled

    Abstract: No abstract text available
    Text: Cascadable Amplifier 10 to 500 MHz A75-3/ SMA75-3 V3 Features Product Image • HIGH GAIN: 20.5 dB TYP. • LOW NOISE: 1.7 dB (TYP.) Description The A75-3 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance


    Original     		PDF A75-3/ SMA75-3 A75-3 MIL-STD-883 SMA75-3 CA75-3

    Untitled

    Abstract: No abstract text available
    Text: Cascadable Amplifier 5 to 500 MHz A75/ SMA75 V3 Features • • • • Product Image HIGH GAIN: 21.0 dB TYP. LOW NOISE: 2.1 dB (TYP.) MEDIUM OUTPUT LEVEL: +9 dBm (TYP.) WIDE POWER SUPPLY RANGE: +5 TO +20 VOLTS Description The A75 RF amplifier is a discrete hybrid design, which uses


    Original     		PDF SMA75 MIL-STD-883 SMA75

    TRANSISTOR A75

    Abstract: A75-2 CA75-2 SMA75-2
    Text: A75-2 / SMA75-2 Cascadable Amplifier 5 to 250 MHz Rev. V2 Features Product Image • AVAILABLE IN SURFACE MOUNT • HIGH GAIN: 21.0 dB TYP. • MEDIUM OUTPUT LEVEL: +8.0 dBm (TYP.) Description The A75-2 RF amplifier is a discrete hybrid design, which uses


    Original     		PDF A75-2 SMA75-2 MIL-STD-883 A75-2 MAAM-008730-SMA752 MAAM-008730-0CA752 TRANSISTOR A75 CA75-2 SMA75-2

    TRANSISTOR A75

    Abstract: CA75 SMA75
    Text: A75 / SMA75 Cascadable Amplifier 5 to 500 MHz Rev. V3 Features • • • • Product Image HIGH GAIN: 21.0 dB TYP. LOW NOISE: 2.1 dB (TYP.) MEDIUM OUTPUT LEVEL: +9 dBm (TYP.) WIDE POWER SUPPLY RANGE: +5 TO +20 VOLTS Description The A75 RF amplifier is a discrete hybrid design, which uses


    Original     		PDF SMA75 MIL-STD-883 TRANSISTOR A75 CA75 SMA75

    transistor A753

    Abstract: A75-3 CA75-3 MAAM-008317-CA7503 SMA75-3 TRANSISTOR A75
    Text: A75-3 / SMA75-3 Cascadable Amplifier 10 to 500 MHz Rev. V3 Features Product Image • HIGH GAIN: 20.5 dB TYP. • LOW NOISE: 1.7 dB (TYP.) Description The A75-3 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance


    Original     		PDF A75-3 SMA75-3 MIL-STD-883 A75-3 MAAM-008317-CA7503 transistor A753 CA75-3 MAAM-008317-CA7503 SMA75-3 TRANSISTOR A75

    TRANSISTOR A75

    Abstract: transistor A753 A75-3 CA75-3 SMA75-3
    Text: A75-3/SMA75-3 10 TO 500 MHz CASCADABLE AMPLIFIER • HIGH GAIN: 20.5 dB TYP. · LOW NOISE: 1.7 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics Typical Frequency Small Signal Gain (min.) Gain Flatness (max.) Reverse Isolation


    Original     		PDF A75-3/SMA75-3 50-ohnotice. A75-3 SMA75-3 CA75-3 TRANSISTOR A75 transistor A753 A75-3 CA75-3 SMA75-3

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAs IRED a PHOTO-TRANSISTOR TLP731,732 OFFICE MACHINE. HOUSEHOLD USE EQUIPMENT. SOLID STATE RELAY. SWITCHING POWER SUPPLY. The TOSHIBA TLP731 and TLP732 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead


    OCR Scan     		PDF TLP731 TLP732 BS415 BS7002 EN60950) UL1577, E67349 TLP731

    1117 S 3,3 Transistor

    Abstract: Hall Sensor 4-lead S-Mini 1117 S Transistor transistor 1345
    Text: CONTENTS PREFACE Related Document System List of Small Signal Transistors & Diodes Surface Mount Devices . 5 1. Using Device Selection Flowchart . 15 General Purpose Low Frequency Transistor SelectionMethod .


    OCR Scan     		PDF TA75W 1117 S 3,3 Transistor Hall Sensor 4-lead S-Mini 1117 S Transistor transistor 1345

    UPA75V

    Abstract: upa75 pa75v A75V
    Text: ¿¿PA75V /uP A75V PN P Silicon Epitaxial Compound Transistor Differential Amplifier P N P if c ; - > 'J a > í g - é - h - 7 > ¿ 5 . * ? ft# FEATURES O 1c h i p £*: *>. -<71*. ¿ V b e = 2mV T Y P . <. /PA C KA G E DIM ENSIONS (Unit : mm) E Q T > 7*.


    OCR Scan     		PDF uPA75V UPA75V upa75 pa75v A75V

    2N6603

    Abstract: SILICON SMALL-SIGNAL DICE 2n6603 transistor 2C6603
    Text: MOTOROLA SC -C D IO DE S /O PT O } 34 dË T | t i3t a75SS 00BÖ077 4 | 1 ! 6367255 MOTOROLA SC 34C DIO D ES/O PTO SILICON RF TRANSISTOR DICE (continued) 38077 T ” 3 (" / D ? 2C6603 DIE NO. — NPN LINE SOURCE — RF502.101 This die provides performance equal to or better than that of


    OCR Scan     		PDF a75SS RF502 2N6603 MRF902 2C6603 SILICON SMALL-SIGNAL DICE 2n6603 transistor 2C6603

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Z T X 10 4 8 A ISSUE 3 - FEBRUARY 1995. — . FEATURES * * V cev =50V Very Low Saturation Voltages * High Gain * 20 A m p s pulse current


    OCR Scan     		PDF ZTX1048A

    TRANSISTOR REPLACEMENT GUIDE

    Abstract: ULN2083 array MC1310P sfc*2741 TBA221 741TC uln2046a All in one TRANSISTOR REPLACEMENT GUIDE SFC2741 MC1305P
    Text: Z ir SPRAGUE TRANSISTOR ARRAYS A New Approach to Design Problem Solving Sprague offers nine monolithic active-device arrays which com bine the performance and versatility of discrete devices with th e inherent reliability and matching of integrated circuits.


    OCR Scan     		PDF ULS-2045H ULN-2046A ULN-2047A ULN-2054A ULN-2081A ULN2289A SFC2741C SFC2741 ULN2151D ULN2151M TRANSISTOR REPLACEMENT GUIDE ULN2083 array MC1310P sfc*2741 TBA221 741TC uln2046a All in one TRANSISTOR REPLACEMENT GUIDE MC1305P

    SFC2741

    Abstract: sfc2741c TRANSISTOR REPLACEMENT GUIDE ULN2081A ULN2083 array SFC2741DC TDA1200 LM1307N MC1305P CA1310E
    Text: SPRAGUE T ES T TYPE ULN-2054A DUAL INDEPENDENT DIFFERENTIAL AMPLIFIERS The ULN-2054A is a transistor array consisting of six NPN transistors on a single monolithic chip. The transistors are internally interconnected to form two independent differential am­


    OCR Scan     		PDF ULN-2054A ULN2289A SFC2741C SFC2741 ULN2151D ULN2151M T2741WV ULN2151D TRANSISTOR REPLACEMENT GUIDE ULN2081A ULN2083 array SFC2741DC TDA1200 LM1307N MC1305P CA1310E

    N1702

    Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
    Text: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961


    OCR Scan     		PDF 2N34A 2N43A 2N44A 2N59A 2N59B 2N59C 2N60A 2N60B 2N60C 2N61A N1702 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922

    TC518129AF-10

    Abstract: No abstract text available
    Text: 131,072 WORDS x 8 BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC518129A-LV Family is a 1M bit high-speed CMOS Pseudo-Static RAM organized as 131,072 words by 8 bits. The TC518129A-LV Family utilizes one transistor dynamic memory cell array with CMOS peripheral circuitry to achieve large capacity, high speed accesses, and low


    OCR Scan     		PDF TC518129A-LV TC518129APL/AFL-80LV TC518129APL/AFL-1OLV TC518129APL/AFL-12LV DIP32 TC518129APL TC518129AF-10

    Untitled

    Abstract: No abstract text available
    Text: • b S H IÔ E ? M IT S U B IS H I 0G 15125 D G T L 31S *1 1 1 7 3 MITSUBISHI BIPOLAR DIGITAL ICs M 54584P L O G IC 8-UNIT 350mA TRANSISTOR ARRAY DESCRIPTION The M54584P, 8-channel sink driver, consists of 16 NPN PIN CONFIGURATION (TOP VIEW) transistors connected to form high current gain driver pairs


    OCR Scan     		PDF 54584P 350mA M54584P, 350mA a-75TC