MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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Untitled
Abstract: No abstract text available
Text: • TRANSISTOR MODULE 7«maM3 0005177 357 QCA75A/QCB75A40/60 UL;E76102 M and Q C B 7 5 A are dual Darlin gton power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode.
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QCA75A/QCB75A40/60
E76102
A75A60
B75A40
B75A60
QCA75A/QCB75A
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6R190C6
Abstract: No abstract text available
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6
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IPx60R190C6
IPA60R190C6,
IPB60R190C6
IPI60R190C6,
IPP60R190C6
IPW60R190C6
6R190C6
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6R190C6
Abstract: IPI60R190C6 IPA60R190C6 IPB60R190C6 IPP60R190C6 IPW60R190C6 MOSFET TRANSISTOR SMD MARKING CODE 11 6R190
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6
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IPx60R190C6
IPA60R190C6,
IPB60R190C6
IPI60R190C6,
IPP60R190C6
IPW60R190C6
6R190C6
IPI60R190C6
IPA60R190C6
IPB60R190C6
IPP60R190C6
IPW60R190C6
MOSFET TRANSISTOR SMD MARKING CODE 11
6R190
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6R190
Abstract: 6R190C6 6r190c IPW60R190
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6
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IPx60R190C6
IPA60R190C6,
IPB60R190C6
IPI60R190C6,
IPP60R190C6
IPW60R190C6
6R190
6R190C6
6r190c
IPW60R190
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6R190C6
Abstract: 6r190 6r190c to247 pcb footprint transistor SMD MARKING CODE 14
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6
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IPx60R190C6
IPA60R190C6,
IPB60R190C6
IPI60R190C6,
IPP60R190C6
IPW60R190C6
6R190C6
6r190
6r190c
to247 pcb footprint
transistor SMD MARKING CODE 14
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6R190C6
Abstract: marking code ll SMD Transistor SMD TRANSISTOR MARKING 9D 6r190 d 998 transistor circuit smd transistor marking LL IPA60R190C6 IPB60R190C6 IPI60R190C6 IPP60R190C6
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6
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IPx60R190C6
IPA60R190C6,
IPB60R190C6
IPI60R190C6,
IPP60R190C6
IPW60R190C6
6R190C6
marking code ll SMD Transistor
SMD TRANSISTOR MARKING 9D
6r190
d 998 transistor circuit
smd transistor marking LL
IPA60R190C6
IPB60R190C6
IPI60R190C6
IPP60R190C6
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Untitled
Abstract: No abstract text available
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6
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IPx60R190C6
IPA60R190C6,
IPB60R190C6
IPI60R190C6,
IPP60R190C6
IPW60R190C6
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6R190C6
Abstract: No abstract text available
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6
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IPx60R190C6
IPA60R190C6,
IPB60R190C6
IPI60R190C6,
IPP60R190C6
IPW60R190C6
6R190C6
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6R190C6
Abstract: 6r190 6r190c SMD TRANSISTOR MARKING 9D IPA60R190C6 IPB60R190C6 IPP60R190C6 IPW60R190C6 6r190c6 infineon 6R19
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6
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IPx60R190C6
IPA60R190C6,
IPB60R190C6
IPI60R190C6,
IPP60R190C6
IPW60R190C6
726-IPB60R190C6
IPB60R190C6
6R190C6
6r190
6r190c
SMD TRANSISTOR MARKING 9D
IPA60R190C6
IPW60R190C6
6r190c6 infineon
6R19
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bSE I> • 0021711 TTfl APX BLY91C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran
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BLY91C
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Untitled
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor BUK637-400B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor In a plastic envelope. FREDFET with fast recovery
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BUK637-400B
BUK637-400B
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U5U7726323
Abstract: Monolithic Transistor Pair U5U7726312 A726 u5u772 U5U77 juA726
Text: HA726 TEMPERATURE-CONTROLLED DIFFERENTIAL PAIR FAIRCHILD LINEAR INTEGRATED CIRCU ITS G E N E R A L D E S C R I P T I O N — T he ¿*A726 is a m on o lith ic transistor pair in high thermal-resistance package, held at a con stant tem perature b y active temperature regulator circuitry. The transistor pair
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pA726
juA726
U5U7726323
Monolithic Transistor Pair
U5U7726312
A726
u5u772
U5U77
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transistor zo 607
Abstract: MSI IC AN415A U440 transistor zo 607 motorola transistor 151 transistor case To 106 BUX42 75S4 U440
Text: MOTOROLA SC Í X S T R S / R 6367254 F> MOTOROLA DE | b 3 b 7 5 5 4 SC XSTRS/R □ □Û D A7 1 96D 8 0 8 7 1 F D D r- 3 3-/3 MOTOROLA SEMICONDUCTOR BUX42 TECHNICAL DATA 12 AMPERES SWITCHMODE SERIES NPN SILICON POWER TRANSISTOR NPN SILICON POWER METAL TRANSISTOR
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AN415A)
transistor zo 607
MSI IC
AN415A
U440 transistor
zo 607
motorola transistor 151
transistor case To 106
BUX42
75S4
U440
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smd transistor LY
Abstract: smd transistor ISS smd transistor ISS 7
Text: Product specification Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor DESCRIPTION P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.
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BST120
MDA77S
smd transistor LY
smd transistor ISS
smd transistor ISS 7
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bd132
Abstract: transistor ALG 20
Text: BD132 _ J V _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope for general purpose, medium power applications. N-P-N complement is BD131. QUICK REFERENCE DATA Collector-base voltage open emitter
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BD132
OT-32
BD131.
bbS3T31
0D34251
BD131
BD132
bb53T31
transistor ALG 20
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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NTE74C925
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74LS626 16-Lead DIP, See Diag. 249 Dual Voltage Controlled Oscillator NTE74LS627 14-Lead DIP, See Dlag. 247 Dual Voltage Controlled Oscillator NTE74LS629 16-Lead DIP, See Diag. 249 Dual Voltage Controlled Oscillator
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NTE74LS626
16-Lead
NTE74LS627
14-Lead
NTE74LS629
NTE74LS640,
20-Lead
NTE74LS642
NTE74C925
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low on-state resistance and has
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BUK9840-55
OT223
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smd transistor LY
Abstract: A763 transistor SMD 352 ld smd transistor smd transistor ds
Text: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in SOT23 envelope and designed for use as Surface Mounted Device SMD in thin and thick-fllm circuits for
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BST82
smd transistor LY
A763
transistor SMD 352
ld smd transistor
smd transistor ds
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