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    TRANSISTOR A54 Search Results

    TRANSISTOR A54 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A54 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SGA-5489

    Abstract: No abstract text available
    Text: Preliminary Product Description SGA-5489 Stanford Microdevices’ SGA-5489 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.3V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT


    Original     		PDF SGA-5489 SGA-5489 50-ohm DC-4000 EDS-100618

    AE8 diode

    Abstract: 4a8 diode diode marking A43 DIODE S6 4aa BV99 aA88 IPB120N06N G
    Text: IPB120N06N G IPP120N06N G "%&$!"# Power-Transistor Product Summary Features . V 9G O >@50ABAE8 B 2 78=6 2 >=D4@B 4@A 0=3 AG=2 @42 B 858 2 0B 8>= R  + >=< 0F + & O ' 2 70=4;4=70=2 4< 4=B =>@< 0;4D4; I &/  D4@A8 >= X" /- I9 6 O   R >? 4@0B 8=6 B


    Original     		PDF IPB120N06N IPP120N06N AE8 diode 4a8 diode diode marking A43 DIODE S6 4aa BV99 aA88 IPB120N06N G

    IPP050N06NG

    Abstract: diode a43 IPB050N06NG
    Text: IPP050N06N G IPB050N06N G "%&$!"# Power-Transistor Product Summary Features V 9G O >@50ABAE8 B 2 78=6 2 >=D4@B 4@A 0=3 AG=2 @42 B 858 2 0B 8>= R  + >=< 0F + & O ' 2 70=4;4=70=2 4< 4=B =>@< 0;4D4;  D4@A8 >= I9 . I ,&/ X" ( 6 O   R >? 4@0B 8=6 B


    Original     		PDF IPP050N06N IPB050N06N IPP050N06NG diode a43 IPB050N06NG

    Untitled

    Abstract: No abstract text available
    Text: Cascadable Amplifier 5 to 500 MHz A54/ SMA54 V3 Features Product Image • HIGH GAIN— TWO STAGES; 27.5 dB TYP. • MEDIUM OUTPUT LEVEL: +8 dBm (TYP.) • LOW VSWR:<1.4:1 (TYP.) Description The A54 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for consistent performance


    Original     		PDF SMA54 MIL-STD-883 SMA54

    CA54

    Abstract: SMA54 TRANSISTOR A54
    Text: A54 / SMA54 Cascadable Amplifier 5 to 500 MHz Rev. V3 Features Product Image • HIGH GAIN— TWO STAGES; 27.5 dB TYP. • MEDIUM OUTPUT LEVEL: +8 dBm (TYP.) • LOW VSWR:<1.4:1 (TYP.) Description The A54 RF amplifier is a discrete hybrid design, which uses


    Original     		PDF SMA54 MIL-STD-883 CA54 SMA54 TRANSISTOR A54

    CA54

    Abstract: SMA54 TRANSISTOR A54
    Text: A54/SMA54 5 TO 500 MHz CASCADABLE AMPLIFIER • HIGH GAIN - TWO STAGES: 27.5 dB TYP. · MEDIUM OUTPUT LEVEL: +8 dBm (TYP.) · LOW VSWR: <1.4:1 (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics Typical Frequency Small Signal Gain (min.)


    Original     		PDF A54/SMA54 SMA54 CA54 SMA54 TRANSISTOR A54

    Untitled

    Abstract: No abstract text available
    Text: A54/SMA54 5 TO 500 MHz CASCADABLE AMPLIFIER • HIGH GAIN - TWO STAGES: 27.5 dB TYP. · MEDIUM OUTPUT LEVEL: +8 dBm (TYP.) · LOW VSWR: <1.4:1 (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics Typical Frequency Small Signal Gain (min.)


    Original     		PDF A54/SMA54 SMA54

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    CM2025

    Abstract: w65 transistor npn, transistor, sc 109 b T3D 34 BUV11N transistor 3-440
    Text: MOTOROLA SC XSTRS/R F 15E D I b3b?a54 G O û lflâ B 5 I 7 ^ 3 3 MOTOROLA SEM ICO N DU CTO R TECHNICAL DATA NPN SILICON POWER METAL TRANSISTOR . designed for high speed, high current, high power applications. NPN SILICON POWER METAL TRANSISTOR 20 A M P E R E S


    OCR Scan     		PDF AN415A) CM2025 w65 transistor npn, transistor, sc 109 b T3D 34 BUV11N transistor 3-440

    MPS-U02

    Abstract: mpsu02 H R C M F 3B 334 MPS-U52 Motorola MPSU02 motorola transistor r 724 MPSU52
    Text: MO TO RO LA SC XSTRS/R F 15E D | fc>3b?SSM 0005407 S | * MOTOROLA SEMICONDUCTOR MPS-U02 TECHNICAL DATA Æ gWP^ I LICON A N N U LA R ~ FIER TRANSISTOR kg iW for general-purpose, high-voltage amplifier and tions. • m NPN SILICON AM PLIFIER TRANSISTOR High Power Dissipation — Pq * 10 W @ T c - 25°C


    OCR Scan     		PDF MPS-U02 MPS-U52 MPS-U02 mpsu02 H R C M F 3B 334 MPS-U52 Motorola MPSU02 motorola transistor r 724 MPSU52

    Untitled

    Abstract: No abstract text available
    Text: Product Description SGA-5486 Stanford M icrodevices’ SG A-5486 is a high performance cascadeable 50-ohm am plifier designed for operation at voltages as low as 3.6V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT


    OCR Scan     		PDF 50-ohm SGA-5486 DC-2400

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors bbS3^31 HF/VHF power MOS transistor — ^ — — FEATURES QDBTTS? H lfl APX Product specification BLF241E N AUER PHILIPS/DISCRETE b^E D PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability


    OCR Scan     		PDF BLF241E O-39/3) MBA379

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Thlïï H EW L E T T K KÆPA CK A R D 4.8 V NPN Common Em itter Output Power Transistor for GSM Class IV Phones Technical Data AT-36408 Features • 4.8 Volt Pulsed Operation pulse width = 577 |isec, duty cycle = 12.5% SOIC-8 Surface Mount Plastic Package


    OCR Scan     		PDF AT-36408 AT-36408

    logos 4012B

    Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
    Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX


    OCR Scan     		PDF TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485

    MRF2001M

    Abstract: motorola transistor r 724 MRF2001
    Text: 12E D I t3b?ESM 0000024 T | MO T OR OL A SC r - 33-o¿r XSTRS/R F MOTOROLA SEMICONDUCTOR TECHNICAL DATA _ T h e R F L in e _ 1 .0 W 2 GHz NPN SILICON MICROWAVE POWER TRANSISTOR M IC R O W A V E POWER T R A N S IS TO R . . . designed for Class B and C common base broadband amplifier


    OCR Scan     		PDF MRF2001M MRF2001M motorola transistor r 724 MRF2001

    MTP2N85

    Abstract: MTP2N90 td 3404 ap n1TM transistor 3405 motorola MTM2N85
    Text: IM E M O TO RO LA SC X S T R S / R D I b 3 b 7 2 S 4 Q Q f i'n b ö 5 | F M O TO R O LA • SEMICONDUCTOR T E C H N IC A L D A T A MTM2N85 MTM2N90 MTP2N85 MTP2N90 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS


    OCR Scan     		PDF MTM2N85 MTM2N90 MTP2N85 MTP2N90 021SBSC 21A-04 O-220AB 0005KS) T0-204M MTP2N90 td 3404 ap n1TM transistor 3405 motorola

    Untitled

    Abstract: No abstract text available
    Text: 131,072 W O R D S X 8 BIT C M O S P SEU D O STATIC R A M DESCRIPTIO N The TC518129A Family is a 1M bit high speed CMOS Pseudo Static RAM organized as 131,072 words by 8 bits. The TC518129A Family utilizing one transistor dynamic memory cell with CMOS peripheral circuit provides large capacity , high speed and low power features. The feature includes


    OCR Scan     		PDF TC518129A 18129AFW-12, TC518129AFWL-12 TC518129AP/ASP/AF/AFWâ TC518129APL/ASPL/AFL/AFWLâ TC518129AFTL/ATRLâ TSOP32

    TP2370

    Abstract: No abstract text available
    Text: 1 EE D I L3b?2S4 MOTOROLA SC 0000231 XSTRS/R M | T"33- ^ F MOTOROLA SE M IC O N D U C T O R TECHNICAL DATA TP237Ö The RF Line V H F P o w e r T ra n sisto r The TP2370 transistor is intended for land m obile applications operating over the 145-175 M H z frequency range w ith typical vehicular pow er supplies.


    OCR Scan     		PDF TP237Ö TP2370

    J01006

    Abstract: transformer mttf UNELCO DSR5050
    Text: 15E D I L3h7aS4 MOTOROLA MOTOROLA SC GOaPEOO XSTRS/R T | F SEM ICO NDUCTO R TECHNICAL DATA J01006 The RF Line V H F Power Transistor . . . d e s ig n e d p r im a rily fo r w id e b a n d la rg e -s ig n a l o u tp u t a m p lifie r stag es in 3 0 - 2 0 0 M H z


    OCR Scan     		PDF J01006 16A-01, 1x1010 1x103 1x105 transformer mttf UNELCO DSR5050

    transistor TA78

    Abstract: TA57 ta76 ic TA76 TA54/TA57/TA60/TA61/TA64/TA76/TA78 ta64
    Text: h -7 > y 7s £ /T ra n sisto rs TA54/T A57/T A60/T A61 /T A64/T A76/T A78 T A 5 4 /T A 5 7 /T A 6 0 /T A 6 1 T A 6 4 /T A 7 6 /T A 78 1 f c f T i i - ' f i ' - i - M y ' =i > Epitaxial Planar Silicon Transistor Arrays • W F ^ T liill/ D im e n s io n s U n it: mm)


    OCR Scan     		PDF TA54/T A57/T A60/T A64/T A76/T 12pin TA54/TA57/TA60/TA61 /TA64/T A76/TA78 transistor TA78 TA57 ta76 ic TA76 TA54/TA57/TA60/TA61/TA64/TA76/TA78 ta64

    MTH8N55

    Abstract: DIODE MOTOROLA B33 MTM8N60 3fc relay 000073S AN569 MTH8N60 U055 TO 521 MH
    Text: MOTOROLA SC IME D I XSTRS/R F b3 b?a SM O Oâ ^a bT 3 I S f -1 5 MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M T H 8N 55 MTH8ÏM60 M TM 8N60 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancem ent-M ode S ilic o n G ate T M O S T h e s e T M O S P o w e r FETs are d e s ig n e d fo r h ig h v o lta g e , high


    OCR Scan     		PDF MTH8N55 MTH8N60 MTM8N60 Y145M. O-218AC DIODE MOTOROLA B33 3fc relay 000073S AN569 U055 TO 521 MH

    TRANSISTOR BC 137

    Abstract: WJ-A54 TRANSISTOR BC 158 transistor bc 144 WJ-CA54
    Text: uuU A54/SMA54 5 to 400 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN - TWO STAGES: 27.5 dB TYP. MEDIUM OUTPUT LEVEL: +8 dBm (TYP.) LOW VSWR: <1.4:1 (TYP.) Outline Drawings A54 J Specifications'* 0.200 (5.08) Frequency (Min.)


    OCR Scan     		PDF A54/SMA54 1-800-WJ1 TRANSISTOR BC 137 WJ-A54 TRANSISTOR BC 158 transistor bc 144 WJ-CA54

    POWER-12

    Abstract: POWER12 WJ-A54 WJA54 sma545
    Text: WJ-A54/ SMA54 5 to 400 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN - TWO STAGES: 27.5 dB TYP. MEDIUM OUTPUT LEVEL: +8 dBm (TYP.) LOW VSWR: < 1.4:1 (TYP.) Outline Drawings A54 0.450 D <1U1)D Specifications’* Frequency (Min.)


    OCR Scan     		PDF WJ-A54/ SMA54 POWER-12 POWER12 WJ-A54 WJA54 sma545