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    TRANSISTOR A5 Search Results

    TRANSISTOR A5 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A5 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1774

    Abstract: 2SC4617
    Text: UTC 2SA1774 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR FEATURES * Excellent hFE linearity * Complements the UTC 2SC4617 MARKING 2 1 A5 3 SOT-523 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25℃ PARAMETER Collector-Base Voltage


    Original     		PDF 2SA1774 2SC4617 OT-523 QW-R221-011 2SA1774 2SC4617

    DTA143X

    Abstract: DTA143XL
    Text: UTC DTA143X PNP DIGITAL TRANSISTOR PNP DIGITAL TRANSISTOR FEATURES * Built-in bias thin film resistors per equivalent circuit * Easy on/off applications 2 1 3 EQUIVALENT CIRCUIT IN MARKING OUT R1 SOT-523 A5X R2 GND + IN OUT 1: GND 2: IN 3: OUT *Pb-free plating product number:DTA143XL


    Original     		PDF DTA143X OT-523 DTA143XL QW-R221-007 DTA143X DTA143XL

    BY206

    Abstract: BRY61 BZY88C8V2 BRY61 EQUIVALENT "Programmable Unijunction Transistor" unijunction application note
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BRY61 Programmable unijunction transistor Product specification Supersedes data of 1997 Jul 21 1999 Apr 27 Philips Semiconductors Product specification Programmable unijunction transistor DESCRIPTION


    Original     		PDF M3D088 BRY61 MGL167 MGC421 SCA63 115002/00/03/pp8 BY206 BRY61 BZY88C8V2 BRY61 EQUIVALENT "Programmable Unijunction Transistor" unijunction application note

    "Programmable Unijunction Transistor"

    Abstract: BY206 Programmable Unijunction Transistor transistor K 2333 BZY88C8V2 BZY88C str 6707 equivalent MEA141 BRY61 BRY61 EQUIVALENT
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BRY61 Programmable unijunction transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 21 Philips Semiconductors Product specification Programmable unijunction transistor


    Original     		PDF M3D088 BRY61 MGL167 MGC421 SCA55 117047/00/02/pp12 "Programmable Unijunction Transistor" BY206 Programmable Unijunction Transistor transistor K 2333 BZY88C8V2 BZY88C str 6707 equivalent MEA141 BRY61 BRY61 EQUIVALENT

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1774 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR  FEATURES * Excellent hFE linearity * Complements the UTC 2SC4617  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 2SA1774L-x-AE3-R


    Original     		PDF 2SA1774 2SC4617 2SA1774L-x-AE3-R 2SA1774G-x-AE3-R OT-23 2SA1774L-x-AN3-R 2SA1774G-x-AN3-R OT-523 2SA1774L-x-AQ3-R 2SA1774G-x-AQ3-R

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS M3D124 BFU510 NPN SiGe wideband transistor Preliminary specification 2001 July 24 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU510 PINNING FEATURES • Very high power gain PIN • Very low noise figure


    Original     		PDF M3D124 BFU510 BFU510 MSB842 125104/00/04/pp11

    EIA-556-A

    Abstract: sot-23 marking 9D transistor marking 9D NF 723 L2SA1365 marking A5F application of IC 723 EIA-556A H SOD723
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor L2SA1235FLT1G DESCRIPTION L2SA1365FLT1G is a mini package silicon PNP epitaxial transistor, it is designed for low frequency voltage application. . 3 FEATURE ● Small collector to emitter saturation voltage.


    Original     		PDF L2SA1235FLT1G L2SA1365FLT1G 195mm 150mm 10Reel/Inner 30KPCS/Inner 3000PCS/Reel 40KPCS/Inner OT-723 EIA-556-A sot-23 marking 9D transistor marking 9D NF 723 L2SA1365 marking A5F application of IC 723 EIA-556A H SOD723

    10GHz oscillator

    Abstract: 4 pin dual-emitter RF TRANSISTOR 10GHZ BFU510 RF TRANSISTOR 2.5 GHZ s parameter RCS9 "MARKING CODE A5*" 6 pins IC cbe LC marking code transistor RF NPN POWER TRANSISTOR 2.5 GHZ
    Text: DISCRETE SEMICONDUCTORS M3D124 BFU510 NPN SiGe wideband transistor Preliminary specification 2001 Nov 08 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU510 PINNING FEATURES • Very high power gain PIN • Very low noise figure


    Original     		PDF M3D124 BFU510 SCA73 125104/00/04/pp12 10GHz oscillator 4 pin dual-emitter RF TRANSISTOR 10GHZ BFU510 RF TRANSISTOR 2.5 GHZ s parameter RCS9 "MARKING CODE A5*" 6 pins IC cbe LC marking code transistor RF NPN POWER TRANSISTOR 2.5 GHZ

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor L2SA1235FLT1G DESCRIPTION L2SA1365FLT1G is a mini package silicon PNP epitaxial transistor, it is designed for low frequency voltage application. . FEATURE 3 ● Small collector to emitter saturation voltage.


    Original     		PDF L2SA1235FLT1G L2SA1365FLT1G OT-23

    marking A5F

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor DESCRIPTION L2SA1365FLT1G is a mini package silicon PNP epitaxial transistor, it is designed for low frequency voltage application. L2SA1235FLT1G S-L2SA1235FLT1G . FEATURE ● Small collector to emitter saturation voltage.


    Original     		PDF L2SA1365FLT1G L2SA1235FLT1G S-L2SA1235FLT1G AEC-Q101 OT-23 marking A5F

    Untitled

    Abstract: No abstract text available
    Text: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor


    Original     		PDF LM96163 LM96163 2N3904,

    Untitled

    Abstract: No abstract text available
    Text: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor


    Original     		PDF LM96163 2N3904,

    BFU510

    Abstract: SiGe POWER TRANSISTOR
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFU510 NPN SiGe wideband transistor Product specification Supersedes data of 2001 Nov 08 2003 Jun 12 Philips Semiconductors Product specification NPN SiGe wideband transistor BFU510 FEATURES PINNING • Very high power gain


    Original     		PDF M3D124 BFU510 SCA75 613516/03/pp16 BFU510 SiGe POWER TRANSISTOR

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor BUK637-500B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. REDFET with fast recovery


    OCR Scan     		PDF BUK637-500B BUK637-500B

    Untitled

    Abstract: No abstract text available
    Text: SANYO SEMI CON DUCTOR LB 1 2 1 3 M! :?«5«*a5S6%e9 15E i "I" 7TÌ7 D 7 t DUJ.hl.lh = | CORP •'P4 S-2.5’ 10 M onolithic Digital 1C 3035A General-Purpose Transistor Array 1354B The LB1213M is a general-purpose transistor array containing 7 channels.


    OCR Scan     		PDF 1354B LB1213M 035A-M16IC 7067KI/7315KI/9133KI LB1213M

    programmable unijunction transistor

    Abstract: "Programmable Unijunction Transistor" ph a5 transistor
    Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BRY61 Programmable unijunction transistor Product specification Supersedes data of 1997 Jul 21 Philips Sem iconductors 1999 Apr 27 PHILIPS Philips Semiconductors Product specification Programmable unijunction transistor


    OCR Scan     		PDF BRY61 BRY61 MGL167 115002/00/03/pp8 programmable unijunction transistor "Programmable Unijunction Transistor" ph a5 transistor

    CM2025

    Abstract: w65 transistor npn, transistor, sc 109 b T3D 34 BUV11N transistor 3-440
    Text: MOTOROLA SC XSTRS/R F 15E D I b3b?a54 G O û lflâ B 5 I 7 ^ 3 3 MOTOROLA SEM ICO N DU CTO R TECHNICAL DATA NPN SILICON POWER METAL TRANSISTOR . designed for high speed, high current, high power applications. NPN SILICON POWER METAL TRANSISTOR 20 A M P E R E S


    OCR Scan     		PDF AN415A) CM2025 w65 transistor npn, transistor, sc 109 b T3D 34 BUV11N transistor 3-440

    Untitled

    Abstract: No abstract text available
    Text: OLE D N AUER PHILIPS/DISCRETE 86D 01878 D r - ^^53=131 DD1411L t> jt 1 BLY87A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile and m ilitary transmitters with a supply voltage o f 13,5 V . The transistor is resistance stabilized and is guaranteed to


    OCR Scan     		PDF DD1411L BLY87A

    D1133

    Abstract: transistor D1133 EQUIVALENT number transistor D1133 EQUIVALENT CIRCUIT transistor D1133 7405AN D1133 EQUIVALENT CIRCUIT truth table inverter gate 74 Inverter Gates FJH321 FJH321A
    Text: T.T.L. SEXTUPLE SINGLE INPUT INVERTER GATES FIH 3 2 I FJH3 2 IA Corresponds to 74 Series type 7405AIM P R O V IS IO N A L D A T A These d evices are transistor-transistor logic sextuple single-input inverter gates, with a single-ended open collector output transistor, in the FJ s e r ie s of integrated


    OCR Scan     		PDF FIH32I FJH32IA 7405AN FJH321 7405AN. O-116 FJH321-Page D1133 D1133 transistor D1133 EQUIVALENT number transistor D1133 EQUIVALENT CIRCUIT transistor D1133 7405AN D1133 EQUIVALENT CIRCUIT truth table inverter gate 74 Inverter Gates FJH321A

    BUK455-60A/B

    Abstract: BUK455-60A
    Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK455-60A/B BUK455 T0220AB CONFIGURATION1993 BUK455-60A/B BUK455-60A

    BUK856-450IX

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors Insulated Gate Bipolar Transistor Protected IGBT GENERAL DESCRIPTION Protected N-channel insulated gate bipolar power transistor in a plastic envelope, intended for automotive ignition applications. The device has built-in zener


    OCR Scan     		PDF BUK856-450IX T0220AB BUK856-450IX

    3004x

    Abstract: Transistor BFX 59 634 transistor bfx 63 63310-A BFX55 D-10 Q60206-X55 Transistor BFX 90 BFX 79
    Text: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j / 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS AKTIENÖESELLSCHAF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for


    OCR Scan     		PDF fl23SbOS 0G04737 BFX55 Q60206-X55 fl235bOS 3004x Transistor BFX 59 634 transistor bfx 63 63310-A BFX55 D-10 Q60206-X55 Transistor BFX 90 BFX 79

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK456-60A/B BUK456 T0220AB