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    TRANSISTOR A43 Search Results

    TRANSISTOR A43 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A43 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


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    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


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    PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    Untitled

    Abstract: No abstract text available
    Text: BCP 54 NPN SILICON TRANSISTOR QUICK REFERENCE DATA Medium power NPN sIllcon transistor tn a mtntature plastic envelope Intended for use In drwer stages of audio amplifier telephony and general mdustnal appllcatlon T VCBO = 45 V VCEO = 45 V VEBO=5V ICM = 1.5A


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    PDF -100mA -10mA Mar-97

    SGA-4363

    Abstract: No abstract text available
    Text: Product Description Stanford Microdevices’ SGA-4363 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases


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    PDF SGA-4363 DC-2000 SGA-4363 EDS-100642

    SGA-4363

    Abstract: SGA-4363-TR1
    Text: Preliminary Product Description SGA-4363 Stanford Microdevices’ SGA-4363 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.2V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT


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    PDF SGA-4363 SGA-4363 50-ohm EDS-100642 SGA-4363-TR1

    TRANSISTOR a43

    Abstract: SGA-4386
    Text: Product Description Stanford Microdevices’ SGA-4386 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current


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    PDF SGA-4386 DC-4500 SGA-4386 EDS-100641 TRANSISTOR a43

    TRANSISTOR a43

    Abstract: MPSA42 MPSA43 transistor MPSA42 Transistor TO-92 A42 MPSA43 equivalent MPS-A42
    Text: MPSA42 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features THRU MPSA43 NPN Silicon High l Through Hole Package l 150oC Junction Temperature Voltage Transistor 625mW Pin Configuration Bottom View C B E TO-92 Mechanical Data


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    PDF MPSA42 MPSA43 150oC 625mW MPSA42 MPSA43 TRANSISTOR a43 transistor MPSA42 Transistor TO-92 A42 MPSA43 equivalent MPS-A42

    ECB-101537

    Abstract: TRANSISTOR a43 transistor 20 dB 2400 mhz
    Text: Product Description SGA-4386 DC-3500 MHz Silicon Germanium HBT Cascadeable Gain Block Stanford Microdevices’ SGA-4386 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.3V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT


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    PDF SGA-4386 50-ohm SGA-4386 DC-3500 EDS-100641 ECB-101537 TRANSISTOR a43 transistor 20 dB 2400 mhz

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


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    PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    CPM1A-MAD01 manual

    Abstract: CPM1-CIF01 cpm1-cif11 omron cpm1a-40cdr-a-v1 CPM1A-MAD01 C200H Pro27 OMRON Operation Manual CPM1A-MAD11 c200h-cn320-eu CPM1A-MAD11 manual OMRON CPM1A-30CDR-A-V1 programming manual
    Text: Micro Programmable Controller CPM1A The CPM1A series micro controllers solve both basic and semi-complex applications. The brick style models include DC inputs/transistor or relay outputs to meet your design requirements. The base I/O for the CPUs ranges from 10, 20, 30, and 40 I/O points with


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    PDF R301-E3-01 CPM1A-MAD01 manual CPM1-CIF01 cpm1-cif11 omron cpm1a-40cdr-a-v1 CPM1A-MAD01 C200H Pro27 OMRON Operation Manual CPM1A-MAD11 c200h-cn320-eu CPM1A-MAD11 manual OMRON CPM1A-30CDR-A-V1 programming manual

    AE8 diode

    Abstract: 4a8 diode diode marking A43 DIODE S6 4aa BV99 aA88 IPB120N06N G
    Text: IPB120N06N G IPP120N06N G "%&$!"# Power-Transistor Product Summary Features . V 9G O >@50ABAE8 B 2 78=6 2 >=D4@B 4@A 0=3 AG=2 @42 B 858 2 0B 8>= R  + >=< 0F + & O ' 2 70=4;4=70=2 4< 4=B =>@< 0;4D4; I &/  D4@A8 >= X" /- I9 6 O   R >? 4@0B 8=6 B


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    PDF IPB120N06N IPP120N06N AE8 diode 4a8 diode diode marking A43 DIODE S6 4aa BV99 aA88 IPB120N06N G

    IPP050N06NG

    Abstract: diode a43 IPB050N06NG
    Text: IPP050N06N G IPB050N06N G "%&$!"# Power-Transistor Product Summary Features V 9G O >@50ABAE8 B 2 78=6 2 >=D4@B 4@A 0=3 AG=2 @42 B 858 2 0B 8>= R  + >=< 0F + & O ' 2 70=4;4=70=2 4< 4=B =>@< 0;4D4;  D4@A8 >= I9 . I ,&/ X" ( 6 O   R >? 4@0B 8=6 B


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    PDF IPP050N06N IPB050N06N IPP050N06NG diode a43 IPB050N06NG

    A42 MPSA42 NPN

    Abstract: MPSA43 TRANSISTOR a43 mpsa42 mpsa42 PIN MPS-A42 transistor mpsa42 MPSA42 marking
    Text: MCC MPSA42   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# THRU MPSA43 Features NPN Silicon High l Through Hole Package l 150oC Junction Temperature Voltage Transistor 625mW Pin Configuration


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    PDF MPSA42 MPSA43 150oC 625mW MPSA42 MPSA43 A42 MPSA42 NPN TRANSISTOR a43 mpsa42 PIN MPS-A42 transistor mpsa42 MPSA42 marking

    mpsa42 PIN

    Abstract: No abstract text available
    Text: MCC MPSA42 TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features THRU MPSA43 NPN Silicon High l Through Hole Package l 150oC Junction Temperature Voltage Transistor


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    PDF MPSA42 MPSA43 625mW 150oC MPSA42 MPSA43 mpsa42 PIN

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE SQD400AA100 SQD400AA10 0 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for


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    PDF SQD400AA100 SQD400AA10 -400A

    TEA2019

    Abstract: NTCC TEA2018A ic 810 pin diagram
    Text: SGS-THOMSON TEA2019 I CURRENT MODE SWITCHING POWER SUPPLY CONTROL CIRCUIT • DIRECT DRIVE OF THE EXTERNAL SWITCH­ ING TRANSISTOR ■ POSITIVE AND NEGATIVE OUTPUT CUR­ RENTS UP TO 0.5A ■ CURRENT LIMITATION ■ TRANSFORMER DEMAGNETIZATION AND POWER TRANSISTOR SATURATION SENS­


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    PDF TEA2019 14-pin TEA2018A 15kHz 155Vrms< VacS250Vrms 7TSTE37 NTCC ic 810 pin diagram

    A1396

    Abstract: No abstract text available
    Text: ALLE6R0 MICROSYSTEMS INC T3D 1> • 05D433Ö DD03743 3 ■ ALGR PROCESS YCA Process YCA NPN Small-Signal Transistor Process Y C A is a double-diffused epitaxial planar N PN silicon transistor designed for use in generalpurpose switching and amplifier circuits. It can oper­


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    PDF 05G433A 1000mA 00090sa A1396

    Transistor y4n

    Abstract: TRANSISTOR a43 MY4N
    Text: K -7 > v 7 $ / T ransistors UM Y4N/FM Y4A h-7 > v ^ £ / D u a l Mini-Mold Transistor PNP/NPN '>•;=I > h 7 > v 7 i l Epitaxial Planar PNP/NPN Silicon Transistor —ÄS/Jvf f -§■:*#tiffl/General Small Signal Amp. UMY4N FMY4A • f t f l^ & H I/'D im e n s io n s U n it : mm


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    Untitled

    Abstract: No abstract text available
    Text: Product Description SGA-4386 Stanford M icrodevices’ SG A-4386 is a high performance cascadeable 50-ohm am plifier designed for operation at voltages as low as 3.3V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT


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    PDF SGA-4386 50-ohm DC-2500

    MT1115

    Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
    Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir


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    PDF 108th MT1115 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117

    Untitled

    Abstract: No abstract text available
    Text: 131,072 WORDS X 8 BIT CMOS PRELIMINARY PSEUDO STATIC RAM DESCRIPTION The TC518128A-LV Family is a 1M bit high speed CMOS Pseudo Static RAM organized as 131,072 words by 8 bits. The TC518128A-LV Family utilizing one transistor dynamic memory’ cell with CMOS


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    PDF TC518128A-LV TC518128A -10LV, -12LV 18128A L-80LV L-10LV

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


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    MPS A56 transistor

    Abstract: MPS 3117 T164 MPS A13 transistor A42 MPSA42 NPN FTSOA12 MPSA10 MPSA12 MPSA13 Schlumberger
    Text: FAIRCHILD SE MI CO ND UC TO R fi4 . . . 40 V T ' #X P \-'V A IVi^SAiy NPN A m plifier Transistor A Schlum berger C om pany Vceo |g 34^^1,74 D0S73TE -=| y P S A IO F A IR C H IL D dT Min PACKAGE MPSA10 TO-92 ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures


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    PDF D0S73TE MPSA10 E74DE MPS A56 transistor MPS 3117 T164 MPS A13 transistor A42 MPSA42 NPN FTSOA12 MPSA12 MPSA13 Schlumberger

    logos 4012B

    Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
    Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX


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    PDF TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485