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    TRANSISTOR A4 Search Results

    TRANSISTOR A4 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


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    AC1501

    Abstract: No abstract text available
    Text: A42Q Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product Features SOT-89 • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. D D1 A E E1 • This transistor is also available in the TO-92 case with the


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    PDF OT-89 MPSA42. OT-89 01-Jun-2002 AC1501

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


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    PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    a42 a92 transistor

    Abstract: transistor BR A92 transistor a42 FMQT4292 Transistors BR A92
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-08A Plastic-Encapsulate Transistors FMQT4292 TRANSISTOR WBFBP-08A 4x4×8L DESCRIPTION PNP and NPN Epitaxial Silicon Transistor FEATURES z Complementary Pair z Tow A42-Type NPN, Tow A92-Type PNP z


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    PDF WBFBP-08A FMQT4292 WBFBP-08A A42-Type A92-Type -200V, -10mA -30mA 30MHz a42 a92 transistor transistor BR A92 transistor a42 FMQT4292 Transistors BR A92

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBT1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High Hfe linearity *Complement to MMBT1815 2 1 3 MARKING A4 SOT-113 1:EMITTER 2:BASE 3: COLLECTOR


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    PDF MMBT1015 150mA MMBT1815 OT-113 QW-R210-003

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-08A Plastic-Encapsulate Transistors FMQT4292 TRANSISTOR WBFBP-08A DESCRIPTION PNP and NPN Epitaxial Silicon Transistor 4x4×0.5 unit: mm FEATURES z Complementary Pair z Tow A42-Type NPN, Tow A92-Type PNP


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    PDF WBFBP-08A FMQT4292 WBFBP-08A A42-Type A92-Type -10mA 30MHz

    C2E1

    Abstract: QCA75A QCA75A40 QCA75A60 QCB75A40 QCB75A60 diode a60 ib25ab
    Text: TRANSISTOR MODULE QCA75A/QCB75A40/60 UL;E76102 (M) QCA75A and QCB75A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. 94max


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    PDF QCA75A/QCB75A40/60 E76102 QCA75A QCB75A 94max VCEX400/600V 32max 31max 110TAB Ic75A C2E1 QCA75A40 QCA75A60 QCB75A40 QCB75A60 diode a60 ib25ab

    C2E1

    Abstract: transistor QCA75A60 QCA75A QCA75A40 QCA75A60 QCB75A40 QCB75A60 94MAX
    Text: TRANSISTOR MODULE QCA75A/QCB75A40/60 UL;E76102 (M) QCA75A and QCB75A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. 94max


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    PDF QCA75A/QCB75A40/60 E76102 QCA75A QCB75A 94max VCEX400/600V 32max 31max 110TAB Ic75A C2E1 transistor QCA75A60 QCA75A40 QCA75A60 QCB75A40 QCB75A60 94MAX

    E2 diode

    Abstract: Diode B2x
    Text: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 (M) QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. C2E1


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    PDF QCA30B/QCB30A40/60 E76102 QCA30B QCB30A 110TAB 94max 32max 31max 35max 400/600V E2 diode Diode B2x

    PZTA42

    Abstract: f 630 TRANSISTOR PZTA42 secos
    Text: PZTA42 NPN Transistor Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-223 Description The PZTA42 is designed for application as a video output to drive color CRT, or as dialer circuit in electronics telephone. REF. A4 2 Date Code


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    PDF PZTA42 OT-223 PZTA42 01-Jun-2002 100MHz f 630 TRANSISTOR PZTA42 secos

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBT1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High Hfe linearity *Complement to MMBT1815 2 1 3 MARKING A4 SOT-23 1:EMITTER 2:BASE 3: COLLECTOR


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    PDF MMBT1015 150mA MMBT1815 OT-23 QW-R206-015

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBT1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High Hfe linearity *Complement to MMBT1815 2 1 3 MARKING A4 SOT-113 1:EMITTER 2:BASE 3: COLLECTOR


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    PDF MMBT1015 150mA MMBT1815 OT-113 QW-R210-003

    marking A42 sot23

    Abstract: marking a42 sot-23 MMBTA42 MMBTA92 MARKING A42
    Text: MMBTA42 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking MMBTA42 A42 SILICON EPITAXIAL PLANAR NPN HIGH VOLTAGE TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPE IS


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    PDF MMBTA42 OT-23 MMBTA92 OT-23 marking A42 sot23 marking a42 sot-23 MMBTA42 MMBTA92 MARKING A42

    marking a4 sot-23

    Abstract: MMBT1815 MMBT1015
    Text: UTC MMBT1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High Hfe linearity *Complement to MMBT1815 2 1 3 MARKING A4 SOT-23 1:EMITTER 2:BASE 3: COLLECTOR


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    PDF MMBT1015 150mA MMBT1815 OT-23 QW-R206-015 marking a4 sot-23 MMBT1815 MMBT1015

    Untitled

    Abstract: No abstract text available
    Text: A44 YOUDA TRANSISTOR Si NPN TRANSISTOR—A44 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 400V *Collector current up to 300mA *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage


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    PDF 300mA

    transistor A92

    Abstract: TRANSISTOR A42 marking A42 a42 CHANGJIANG a42 TRANSISTOR a92 TRANSISTOR ic for cd rom FMQT4292 transistor BR A92
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-08A Plastic-Encapsulate Transistors FMQT4292 TRANSISTOR WBFBP-08A DESCRIPTION PNP and NPN Epitaxial Silicon Transistor 4x4×0.5 unit: mm FEATURES z Complementary Pair z Tow A42-Type NPN, Tow A92-Type PNP


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    PDF WBFBP-08A FMQT4292 WBFBP-08A A42-Type A92-Type -10mA 30MHz transistor A92 TRANSISTOR A42 marking A42 a42 CHANGJIANG a42 TRANSISTOR a92 TRANSISTOR ic for cd rom FMQT4292 transistor BR A92

    marking A42

    Abstract: marking A42 sot23 marking a42 sot-23 A42 SOT23 MMBTA42 MMBTA92 A42 TRANSISTOR sot23
    Text: MMBTA42 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking MMBTA42 A42 SILICON EPITAXIAL PLANAR NPN HIGH VOLTAGE TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPE IS


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    PDF MMBTA42 OT-23 MMBTA92 OT-23 marking A42 marking A42 sot23 marking a42 sot-23 A42 SOT23 MMBTA42 MMBTA92 A42 TRANSISTOR sot23

    MMBT1015

    Abstract: marking a4 sot-23
    Text: UTC MMBT1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High Hfe linearity *Complement to MBT1815 2 1 3 MARKING A4 SOT-23 1:EMITTER 2:BASE 3: COLLECTOR


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    PDF MMBT1015 150mA MBT1815 OT-23 QW-R206-015 MMBT1015 marking a4 sot-23

    24 TRANSISTOR MAKING

    Abstract: LM195 LM295 C1995 LM395 LP395 LP395Z Z03A Ice-100
    Text: LP395 Ultra Reliable Power Transistor General Description The LP395 is a fast monolithic transistor with complete overload protection This very high gain transistor has included on the chip current limiting power limiting and thermal overload protection making it difficult to destroy from


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    PDF LP395 24 TRANSISTOR MAKING LM195 LM295 C1995 LM395 LP395Z Z03A Ice-100

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE SQD400AA100 SQD400AA10 0 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for


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    PDF SQD400AA100 SQD400AA10 -400A

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE SOD300A40/6Q UL;E76102 M SQD300A is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for


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    PDF OD300A40/6Q E76102 SQD300A 400/600V --A40 0Q02B06

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE SQP400AA120 S Q D 4 0 0 A A 1 2 0 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for


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    PDF SQP400AA120 a400A 00020m SQD400AA120

    BA1A4M equivalent

    Abstract: BA1A4M BAIA4M IC10l
    Text: NPN SILICON TRANSISTOR BAI A4M DESCRIPTION The BA1A4M is designed for use in medium speed switching PACKAGE DIMENSIONS circuit. in millimeters inches FEATURE • 4.2 MAX. (0.165 MAX.) Bias resistors built in type NPN transistor equivalent circuit. 2.2 MAX.


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    PDF 10kfi 10-lR BA1A4M equivalent BA1A4M BAIA4M IC10l