diode RU 3AM
Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
Text: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)
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transistor k 385
Abstract: transistor buz 36 C67078-A3210-A2
Text: BUZ 385 SIPMOS Power Transistor • N channel • Enhancement mode • FREDFET Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 385 500 V 9A 0.8 Ω TO-218 AA C67078-A3210-A2 Maximum Ratings Parameter Symbol Drain source voltage VDS
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O-218
C67078-A3210-A2
transistor k 385
transistor buz 36
C67078-A3210-A2
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C67078-A3209-A2
Abstract: buz384
Text: BUZ 384 SIPMOS Power Transistor • N channel • Enhancement mode • FREDFET Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 384 500 V 10.5 A 0.6 Ω TO-218 AA C67078-A3209-A2 Maximum Ratings Parameter Symbol Drain source voltage
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O-218
C67078-A3209-A2
C67078-A3209-A2
buz384
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transistor BUZ 40
Abstract: BUZ 382 C67078-A3207-A2
Text: BUZ 382 SIPMOS Power Transistor • N channel • Enhancement mode • FREDFET Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 382 400 V 12.5 A 0.4 Ω TO-218 AA C67078-A3207-A2 Maximum Ratings Parameter Symbol Drain source voltage
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O-218
C67078-A3207-A2
transistor BUZ 40
BUZ 382
C67078-A3207-A2
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buz 380 transistor
Abstract: transistor buz 380 C67078-A3205-A2
Text: BUZ 380 SIPMOS Power Transistor • N channel • Enhancement mode • FREDFET Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 380 1000 V 5.5 A 2Ω TO-218 AA C67078-A3205-A2 Maximum Ratings Parameter Symbol Drain source voltage VDS
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O-218
C67078-A3205-A2
buz 380 transistor
transistor buz 380
C67078-A3205-A2
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mmic a32
Abstract: SGA-3286 TRANSISTOR a32 EDS-100631
Text: Product Description Stanford Microdevices SGA-3286 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases
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SGA-3286
SGA-3286
EDS-100631
mmic a32
TRANSISTOR a32
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SGA-3263
Abstract: DC-5500 mmic a32
Text: Preliminary Product Description Stanford Microdevices SGA-3263 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases
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SGA-3263
DC-5500
SGA-3263
EDS-100632
mmic a32
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mmic a32
Abstract: SGA-3263 SGA-3263-TR1
Text: Preliminary Product Description SGA-3263 Stanford Microdevices’ SGA-3263 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 2.6V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT
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SGA-3263
SGA-3263
50-ohm
DC-3600
EDS-100632
mmic a32
SGA-3263-TR1
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bf998 Mop
Abstract: BF998 marking t54 PHILIPS MOSFET MARKING PHILIPS MOSFET mcb349 dual gate fet N-channel dual-gate MOS-FET for tv 75bEb DUAL GATE MOS-FET
Text: b3E ]> Philips Semiconductors Data sheet status Preliminary specification date o f issue April 1991 FEATURES • Short channel transistor with high ratio lYfs 1/Cis • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor
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75bEb
6F998
OT143
bf998 Mop
BF998
marking t54
PHILIPS MOSFET MARKING
PHILIPS MOSFET
mcb349
dual gate fet
N-channel dual-gate MOS-FET for tv
DUAL GATE MOS-FET
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buz 385
Abstract: buz385 4900 SIEMENS
Text: SIEMENS BUZ 385 SIPMOS Power Transistor • N channel • Enhancement mode • FREDFET Type BUZ 385 Vos 500V b 9A RdSion 0.8 n Package Ordering Code TO-218AA C67078-A3210-A2 Maximum Ratings Parameter Symbol Drain source voltage Vds V DGR Drain-gate voltage
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O-218AA
C67078-A3210-A2
O-218
buz 385
buz385
4900 SIEMENS
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BUZ 382
Abstract: No abstract text available
Text: SIEMENS BUZ 382 SIPMOS Power Transistor • N channel • Enhancement mode • FREDFET Type Vos b BUZ 382 400 V 12.5 A %S on 0.4 w Package Ordering Code TO-218AA C67078-A3207-A2 Maximum Ratings Parameter Symbol Drain source voltage Vds Drain-gate voltage
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O-218AA
C67078-A3207-A2
O-218AA
BUZ 382
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ld 1088 bs
Abstract: k 1094 transistor 1/ld 1088 bs
Text: SIEMENS BUZ 380 SIPMOS Power Transistor • N channel • Enhancement mode • FREDFET Type BUZ 380 Vbs 1000 V 5.5 A ^bsfon 2w Package Ordering Code TO-218AA C67078-A3205-A2 Maximum Ratings Parameter Symbol Drain source voltage Vbs V DGR Drain-gate voltage
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O-218AA
C67078-A3205-A2
ld 1088 bs
k 1094 transistor
1/ld 1088 bs
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MC706
Abstract: No abstract text available
Text: SIEMENS SIPMOS Power Transistor BUZ 380 • N channel • Enhancement mode • FREDFET Type V'ds h ^DS on Package 1> Ordering Code BUZ 380 1000 V 5.5 A 2.0 n TO-218 AA C67078-A3205-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc = 30 "C
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O-218
C67078-A3205-A2
MC706
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STT 3 SIEMENS
Abstract: TRANSISTOR 2FE ScansUX7 C67078-A3209-A2
Text: SIEMENS BUZ 384 SIPMOS Power Transistor • N channel • Enhancement mode • FREDFET Type BUZ 384 Vds 500 V DS on 10.5 A 0.6 w Package Ordering Code TO-218AA C67078-A3209-A2 Maximum Ratings Parameter Symbol Drain source voltage ^DS V DGR Drain-gate voltage
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O-218AA
C67078-A3209-A2
fl23SbOS
6235b05
STT 3 SIEMENS
TRANSISTOR 2FE
ScansUX7
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transistor c37
Abstract: a38 TRANSISTOR 2N3904 A38 2N3904 A31 TRANSISTOR a32 c104 TRANSISTOR 2n3904 c33 TRANSISTOR a31 2N3904 A32 2N3904 b11
Text: BIPOLAR TRANSISTOR PARTS LIST ALPHA-NUMERIC INDEX OF S S T /S M T SOT-23 , UMT (SOT-323), MPT (SOT-89) AND TO-92 PACKAGED BIPOLAR TRANSISTORS PART NUMBER PART NUMBER DIE No. DIE No. PAGE PAGE PAGE PAGE 2 2N2925 28 C22 61 2N3703 31 A32 37 BCW65B BCW65C 22
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OT-23)
OT-323)
OT-89)
2N2925
2N3703
2N3704
2N3706
2N3711
2N3860
2N3903
transistor c37
a38 TRANSISTOR
2N3904 A38
2N3904 A31
TRANSISTOR a32
c104 TRANSISTOR
2n3904 c33
TRANSISTOR a31
2N3904 A32
2N3904 b11
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 382 SIPMOS Power Transistor • N channel • Enhancement mode V'IOys6 • FREDFET 3 Pin 1 Pin 2 Type BUZ 382 Vbs 400 V b 12.5 A flbSfon 0.4 w Pin 3 D G S Package Ordering Code TO-218AA C67078-A3207-A2 Maximum Ratings Parameter Symbol Drain source voltage
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O-218AA
C67078-A3207-A2
E3Sb05
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 380 SIPMOS Power Transistor • N channel • Enhancement mode ' • FR ED FET fé YW5S 3 Pin 1 Pin 2 Type BUZ 380 Vfes 1000 V b flbsfon 2w 5.5 A Pin 3 D G S Package Ordering Code TO-218AA C67078-A3205-A2 Maximum Ratings Parameter Symbol Drain source voltage
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O-218AA
C67078-A3205-A2
flS35bOS
235b05
623SbGS
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 385 SIPMOS Power Transistor • N channel • Enhancement mode V’ICfc'58 2 é 3 • FREDFET Pirn Pin 2 G Type BUZ 385 Vds 500 V 1D 9A ^DS on 0.8 Q Pin 3 D S Package Ordering Code TO-218AA C67078-A3210-A2 Maximum Ratings Parameter Symbol Drain source voltage
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O-218AA
C67078-A3210-A2
A23SbOS
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Untitled
Abstract: No abstract text available
Text: Product Description SGA-3286 Stanford M icrodevices’ SG A-3286 is a high performance cascadeable 50-ohm am plifier designed for operation at voltages as low as 2.7V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT
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SGA-3286
50-ohm
DC-3600
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Motorola transistors MRF 947
Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that
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2PHX11136Q-17
Motorola transistors MRF 947
trimpots 3296
transistor C5386
1n4740
2N5591 Motorola
2N5688
CQ 542 Transistor npn motorola
equivalent transistor of 2sc3358
HB215/D
ic cd 2399 gp
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3TE445
Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group
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FJJ141/A
2305D
FJJ181/A
2305E/848
FJJ191/A
FJL101/A
CD2306D
FJY101/A
2306E/832
CD2307/944
3TE445
2N3303
ECC88
TAA*310
B9D TRANSISTOR
BYY32
GEX36/7
Ferranti zs70
6ej7
3n159
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TRANSISTOR a32
Abstract: No abstract text available
Text: Die no. A-32 PNP small signal transistor These are epitaxial planar PNP silicon transistors. Features Dimensions U nits: mm • available in TO-92 package; for packaging information, see page 448 • collector-to-emitter breakdown voltage, BVCE0 =40 V (min) at
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2N5087
TRANSISTOR a32
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1PHX11136Q-14
MHW721A2
13001 S 6D TRANSISTOR
atv5030* motorola
2N5591 MOTOROLA
13001 6D TRANSISTOR
BGY41
MHW710-1
construction linear amplifier 2sc1945
7119 amperex
bf503
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Untitled
Abstract: No abstract text available
Text: 131,072 WORDS X 8 BIT CMOS PRELIMINARY PSEUDO STATIC RAM DESCRIPTION The TC518128A-LV Family is a 1M bit high speed CMOS Pseudo Static RAM organized as 131,072 words by 8 bits. The TC518128A-LV Family utilizing one transistor dynamic memory’ cell with CMOS
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TC518128A-LV
TC518128A
-10LV,
-12LV
18128A
L-80LV
L-10LV
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